TW200633049A - Gas supply unit, substrate processing apparatus, and supply gas setting method - Google Patents
Gas supply unit, substrate processing apparatus, and supply gas setting methodInfo
- Publication number
- TW200633049A TW200633049A TW094143443A TW94143443A TW200633049A TW 200633049 A TW200633049 A TW 200633049A TW 094143443 A TW094143443 A TW 094143443A TW 94143443 A TW94143443 A TW 94143443A TW 200633049 A TW200633049 A TW 200633049A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- gas supply
- supply unit
- gaseous mixture
- branch lines
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 2
- 239000007789 gas Substances 0.000 abstract 9
- 239000008246 gaseous mixture Substances 0.000 abstract 4
- 238000005259 measurement Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
Abstract
A gas supply unit, for supplying a gas into a processing chamber in which a substrate is processed, includes a plurality of gas supply sources, a mixing line for mixing a plurality of gases supplied from the gas supply sources to make a gaseous mixture, a multiplicity of branch lines for branching the gaseous mixture to be supplied to a multiplicity of places in the processing chamber, and an additional gas supply unit for supplying a specified additional gas to a gaseous mixture flowing in at least one branch line. The gas supply unit also includes pressure gauges and valves for adjusting gas flow rates in the branch lines, respectively, and a pressure ratio controller for controlling that gaseous mixtures branched into the branch lines to have a specified pressure ratio by adjusting opening degrees of the valves based on measurement results obtained by using the pressure gauges.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004357292A JP4358727B2 (en) | 2004-12-09 | 2004-12-09 | Gas supply apparatus, substrate processing apparatus, and supply gas setting method |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200633049A true TW200633049A (en) | 2006-09-16 |
TWI441254B TWI441254B (en) | 2014-06-11 |
Family
ID=36667053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094143443A TWI441254B (en) | 2004-12-09 | 2005-12-08 | A gas supply device, a substrate processing device, and a supply gas setting method |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4358727B2 (en) |
KR (1) | KR100753692B1 (en) |
CN (1) | CN100390933C (en) |
TW (1) | TWI441254B (en) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4550507B2 (en) * | 2004-07-26 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
JP4895167B2 (en) * | 2006-01-31 | 2012-03-14 | 東京エレクトロン株式会社 | Gas supply apparatus, substrate processing apparatus, and gas supply method |
US20080078746A1 (en) | 2006-08-15 | 2008-04-03 | Noriiki Masuda | Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium |
JP5211450B2 (en) * | 2006-08-15 | 2013-06-12 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and storage medium |
JP5192214B2 (en) | 2007-11-02 | 2013-05-08 | 東京エレクトロン株式会社 | Gas supply apparatus, substrate processing apparatus, and substrate processing method |
JP5378706B2 (en) * | 2008-05-22 | 2013-12-25 | 東京エレクトロン株式会社 | Plasma processing apparatus and processing gas supply apparatus used therefor |
JP5452133B2 (en) * | 2009-08-27 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus and plasma processing method |
JP5562712B2 (en) * | 2010-04-30 | 2014-07-30 | 東京エレクトロン株式会社 | Gas supply equipment for semiconductor manufacturing equipment |
JP5689294B2 (en) | 2010-11-25 | 2015-03-25 | 東京エレクトロン株式会社 | Processing equipment |
JP5792563B2 (en) | 2011-08-31 | 2015-10-14 | 東京エレクトロン株式会社 | Plasma etching method and plasma etching apparatus |
JP2014003234A (en) * | 2012-06-20 | 2014-01-09 | Tokyo Electron Ltd | Plasma processing apparatus and plasma processing method |
JP6034655B2 (en) | 2012-10-25 | 2016-11-30 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP6030994B2 (en) | 2013-05-15 | 2016-11-24 | 東京エレクトロン株式会社 | Plasma etching apparatus and plasma etching method |
US9620417B2 (en) * | 2014-09-30 | 2017-04-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method of manufacturing fin-FET devices |
EP3298623A4 (en) * | 2015-05-17 | 2018-12-26 | Entegris, Inc. | Gas cabinets |
JP6502779B2 (en) * | 2015-07-29 | 2019-04-17 | 東京エレクトロン株式会社 | Method of inspecting leak of valve of gas supply system |
JP7073710B2 (en) | 2017-01-20 | 2022-05-24 | 東京エレクトロン株式会社 | Plasma processing equipment |
CH713539A1 (en) * | 2017-03-03 | 2018-09-14 | Pelco Sarl | Automatic gas mixer. |
JP7296854B2 (en) | 2019-11-07 | 2023-06-23 | 東京エレクトロン株式会社 | Gas supply method and substrate processing apparatus |
CN117198848A (en) * | 2022-06-01 | 2023-12-08 | 长鑫存储技术有限公司 | Gas distribution device, plasma processing device and method |
CN114774887A (en) * | 2022-06-22 | 2022-07-22 | 拓荆科技(北京)有限公司 | Gas delivery device, method and semiconductor deposition equipment |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05136098A (en) * | 1991-11-15 | 1993-06-01 | Seiko Epson Corp | Apparatus and method for manufacturing semiconductor device |
US5916369A (en) * | 1995-06-07 | 1999-06-29 | Applied Materials, Inc. | Gas inlets for wafer processing chamber |
JPH09289170A (en) * | 1996-04-23 | 1997-11-04 | Sony Corp | Semiconductor manufacturing equipment |
US6210482B1 (en) * | 1999-04-22 | 2001-04-03 | Fujikin Incorporated | Apparatus for feeding gases for use in semiconductor manufacturing |
CN1240113C (en) * | 2002-08-20 | 2006-02-01 | 东京毅力科创株式会社 | Plasma etching method and device |
JP4127779B2 (en) * | 2002-08-28 | 2008-07-30 | 株式会社神戸製鋼所 | Hot isostatic pressurizing device and hot isostatic pressurizing method |
US20040050326A1 (en) * | 2002-09-12 | 2004-03-18 | Thilderkvist Karin Anna Lena | Apparatus and method for automatically controlling gas flow in a substrate processing system |
-
2004
- 2004-12-09 JP JP2004357292A patent/JP4358727B2/en active Active
-
2005
- 2005-12-08 KR KR1020050119216A patent/KR100753692B1/en active IP Right Grant
- 2005-12-08 TW TW094143443A patent/TWI441254B/en not_active IP Right Cessation
- 2005-12-09 CN CNB2005101303873A patent/CN100390933C/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN100390933C (en) | 2008-05-28 |
TWI441254B (en) | 2014-06-11 |
KR20060065510A (en) | 2006-06-14 |
KR100753692B1 (en) | 2007-08-30 |
JP4358727B2 (en) | 2009-11-04 |
JP2006165399A (en) | 2006-06-22 |
CN1787170A (en) | 2006-06-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |