TW200633049A - Gas supply unit, substrate processing apparatus, and supply gas setting method - Google Patents
Gas supply unit, substrate processing apparatus, and supply gas setting methodInfo
- Publication number
- TW200633049A TW200633049A TW094143443A TW94143443A TW200633049A TW 200633049 A TW200633049 A TW 200633049A TW 094143443 A TW094143443 A TW 094143443A TW 94143443 A TW94143443 A TW 94143443A TW 200633049 A TW200633049 A TW 200633049A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- gas supply
- supply unit
- gaseous mixture
- branch lines
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 2
- 239000007789 gas Substances 0.000 abstract 9
- 239000008246 gaseous mixture Substances 0.000 abstract 4
- 238000005259 measurement Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A gas supply unit, for supplying a gas into a processing chamber in which a substrate is processed, includes a plurality of gas supply sources, a mixing line for mixing a plurality of gases supplied from the gas supply sources to make a gaseous mixture, a multiplicity of branch lines for branching the gaseous mixture to be supplied to a multiplicity of places in the processing chamber, and an additional gas supply unit for supplying a specified additional gas to a gaseous mixture flowing in at least one branch line. The gas supply unit also includes pressure gauges and valves for adjusting gas flow rates in the branch lines, respectively, and a pressure ratio controller for controlling that gaseous mixtures branched into the branch lines to have a specified pressure ratio by adjusting opening degrees of the valves based on measurement results obtained by using the pressure gauges.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004357292A JP4358727B2 (en) | 2004-12-09 | 2004-12-09 | Gas supply apparatus, substrate processing apparatus, and supply gas setting method |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200633049A true TW200633049A (en) | 2006-09-16 |
TWI441254B TWI441254B (en) | 2014-06-11 |
Family
ID=36667053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094143443A TWI441254B (en) | 2004-12-09 | 2005-12-08 | A gas supply device, a substrate processing device, and a supply gas setting method |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4358727B2 (en) |
KR (1) | KR100753692B1 (en) |
CN (1) | CN100390933C (en) |
TW (1) | TWI441254B (en) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4550507B2 (en) * | 2004-07-26 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
JP4895167B2 (en) * | 2006-01-31 | 2012-03-14 | 東京エレクトロン株式会社 | Gas supply apparatus, substrate processing apparatus, and gas supply method |
JP5211450B2 (en) * | 2006-08-15 | 2013-06-12 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and storage medium |
US20080078746A1 (en) | 2006-08-15 | 2008-04-03 | Noriiki Masuda | Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium |
JP5192214B2 (en) * | 2007-11-02 | 2013-05-08 | 東京エレクトロン株式会社 | Gas supply apparatus, substrate processing apparatus, and substrate processing method |
JP5378706B2 (en) * | 2008-05-22 | 2013-12-25 | 東京エレクトロン株式会社 | Plasma processing apparatus and processing gas supply apparatus used therefor |
JP5452133B2 (en) * | 2009-08-27 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus and plasma processing method |
JP5562712B2 (en) * | 2010-04-30 | 2014-07-30 | 東京エレクトロン株式会社 | Gas supply equipment for semiconductor manufacturing equipment |
JP5689294B2 (en) | 2010-11-25 | 2015-03-25 | 東京エレクトロン株式会社 | Processing equipment |
JP5792563B2 (en) | 2011-08-31 | 2015-10-14 | 東京エレクトロン株式会社 | Plasma etching method and plasma etching apparatus |
JP2014003234A (en) * | 2012-06-20 | 2014-01-09 | Tokyo Electron Ltd | Plasma processing apparatus and plasma processing method |
JP6034655B2 (en) | 2012-10-25 | 2016-11-30 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP6030994B2 (en) | 2013-05-15 | 2016-11-24 | 東京エレクトロン株式会社 | Plasma etching apparatus and plasma etching method |
US9620417B2 (en) | 2014-09-30 | 2017-04-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method of manufacturing fin-FET devices |
EP3298623A4 (en) * | 2015-05-17 | 2018-12-26 | Entegris, Inc. | Gas cabinets |
JP6502779B2 (en) * | 2015-07-29 | 2019-04-17 | 東京エレクトロン株式会社 | Method of inspecting leak of valve of gas supply system |
JP7073710B2 (en) | 2017-01-20 | 2022-05-24 | 東京エレクトロン株式会社 | Plasma processing equipment |
CH713539A1 (en) * | 2017-03-03 | 2018-09-14 | Pelco Sarl | Automatic gas mixer. |
JP7296854B2 (en) * | 2019-11-07 | 2023-06-23 | 東京エレクトロン株式会社 | Gas supply method and substrate processing apparatus |
CN117198848A (en) * | 2022-06-01 | 2023-12-08 | 长鑫存储技术有限公司 | Gas distribution device, plasma processing device and method |
CN114774887A (en) * | 2022-06-22 | 2022-07-22 | 拓荆科技(北京)有限公司 | Gas delivery device, method and semiconductor deposition equipment |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05136098A (en) * | 1991-11-15 | 1993-06-01 | Seiko Epson Corp | Apparatus and method for manufacturing semiconductor device |
US5916369A (en) * | 1995-06-07 | 1999-06-29 | Applied Materials, Inc. | Gas inlets for wafer processing chamber |
JPH09289170A (en) * | 1996-04-23 | 1997-11-04 | Sony Corp | Semiconductor manufacturing equipment |
US6210482B1 (en) * | 1999-04-22 | 2001-04-03 | Fujikin Incorporated | Apparatus for feeding gases for use in semiconductor manufacturing |
CN1240113C (en) * | 2002-08-20 | 2006-02-01 | 东京毅力科创株式会社 | Plasma etching method and device |
JP4127779B2 (en) * | 2002-08-28 | 2008-07-30 | 株式会社神戸製鋼所 | Hot isostatic pressurizing device and hot isostatic pressurizing method |
US20040050326A1 (en) * | 2002-09-12 | 2004-03-18 | Thilderkvist Karin Anna Lena | Apparatus and method for automatically controlling gas flow in a substrate processing system |
-
2004
- 2004-12-09 JP JP2004357292A patent/JP4358727B2/en not_active Expired - Fee Related
-
2005
- 2005-12-08 KR KR1020050119216A patent/KR100753692B1/en active IP Right Grant
- 2005-12-08 TW TW094143443A patent/TWI441254B/en not_active IP Right Cessation
- 2005-12-09 CN CNB2005101303873A patent/CN100390933C/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2006165399A (en) | 2006-06-22 |
TWI441254B (en) | 2014-06-11 |
JP4358727B2 (en) | 2009-11-04 |
KR100753692B1 (en) | 2007-08-30 |
KR20060065510A (en) | 2006-06-14 |
CN100390933C (en) | 2008-05-28 |
CN1787170A (en) | 2006-06-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |