TW200632240A - Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus - Google Patents

Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus

Info

Publication number
TW200632240A
TW200632240A TW095100854A TW95100854A TW200632240A TW 200632240 A TW200632240 A TW 200632240A TW 095100854 A TW095100854 A TW 095100854A TW 95100854 A TW95100854 A TW 95100854A TW 200632240 A TW200632240 A TW 200632240A
Authority
TW
Taiwan
Prior art keywords
semiconductor device
way valve
processing gas
fabricating semiconductor
valve
Prior art date
Application number
TW095100854A
Other languages
Chinese (zh)
Other versions
TWI312840B (en
Inventor
Seok-Jun Won
Yong-Min Yoo
Dae-Youn Kim
Young-Hoon Kim
Dae-Jin Kwon
Original Assignee
Samsung Electronics Co Ltd
Asm Genitech Korea Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd, Asm Genitech Korea Inc filed Critical Samsung Electronics Co Ltd
Publication of TW200632240A publication Critical patent/TW200632240A/en
Application granted granted Critical
Publication of TWI312840B publication Critical patent/TWI312840B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04C—ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT PUMPS
    • F04C29/00—Component parts, details or accessories of pumps or pumping installations, not provided for in groups F04C18/00 - F04C28/00
    • F04C29/0092—Removing solid or liquid contaminants from the gas under pumping, e.g. by filtering or deposition; Purging; Scrubbing; Cleaning
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K7/00—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00—Control of flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Automation & Control Theory (AREA)
  • Chemical Vapour Deposition (AREA)
  • Valve Housings (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.
TW095100854A 2005-01-19 2006-01-10 Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus TWI312840B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20050005074 2005-01-19
KR1020050076968A KR100699861B1 (en) 2005-01-19 2005-08-22 Apparatus having 4-way valve for fabricating semiconductor device, method of controling valve and method of fabricating semiconductor device using the same

Publications (2)

Publication Number Publication Date
TW200632240A true TW200632240A (en) 2006-09-16
TWI312840B TWI312840B (en) 2009-08-01

Family

ID=36936115

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095100854A TWI312840B (en) 2005-01-19 2006-01-10 Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus

Country Status (3)

Country Link
KR (1) KR100699861B1 (en)
CN (1) CN100573813C (en)
TW (1) TWI312840B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI672729B (en) * 2016-08-25 2019-09-21 Ａｓｍ知識產權私人控股有限公司 Exhaust apparatus, and substrate processing apparatus using the same

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102468105B (en) * 2010-11-01 2015-09-02 北京北方微电子基地设备工艺研究中心有限责任公司 Inductance coupled plasma device
US9410244B2 (en) * 2012-09-04 2016-08-09 Asm Ip Holding B.V. Semiconductor processing apparatus including a plurality of reactors, and method for providing the same with process gas
JP6410622B2 (en) * 2014-03-11 2018-10-24 東京エレクトロン株式会社 Plasma processing apparatus and film forming method
TW201634738A (en) * 2015-01-22 2016-10-01 應用材料股份有限公司 Improved injector for spatially separated atomic layer deposition chamber
TWI723024B (en) 2015-06-26 2021-04-01 美商應用材料股份有限公司 Recursive inject apparatus for improved distribution of gas
CN105088192B (en) * 2015-08-12 2018-01-26 上海华力微电子有限公司 Multi-pipeline liquid gasification reacts film-forming apparatus flow controlling method of air
WO2019022081A1 (en) * 2017-07-28 2019-01-31 京セラ株式会社 Sensor module
CN109751511B (en) * 2017-11-07 2020-11-10 北京北方华创微电子装备有限公司 Pipeline protection device and method
CN110943003B (en) * 2018-09-21 2023-08-18 北京北方华创微电子装备有限公司 Process gas purging method
CN111696848B (en) * 2019-03-12 2023-12-22 北京北方华创微电子装备有限公司 Film forming equipment and film forming method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5055260A (en) 1986-05-20 1991-10-08 Union Carbide Industrial Gases Technology Corporation Reactor analysis system
US5259233A (en) * 1991-04-24 1993-11-09 American Air Liquide Counterflow valve
JP2001007032A (en) 1999-06-23 2001-01-12 Shimadzu Corp Fluid material feeder
JP4002060B2 (en) 2000-09-26 2007-10-31 株式会社島津製作所 Liquid material supply device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI672729B (en) * 2016-08-25 2019-09-21 Ａｓｍ知識產權私人控股有限公司 Exhaust apparatus, and substrate processing apparatus using the same

Also Published As

Publication number Publication date
CN100573813C (en) 2009-12-23
KR100699861B1 (en) 2007-03-27
CN1825537A (en) 2006-08-30
TWI312840B (en) 2009-08-01
KR20060084345A (en) 2006-07-24

Similar Documents

Publication Publication Date Title
TW200632240A (en) Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus
TW200636856A (en) Semiconductor processing apparatus and method
US10722840B2 (en) Methods for treating exhaust gas in a processing system
TW200943381A (en) Thermal reactor with improved gas flow distribution
TW200732603A (en) The structure and the method of the auxiliary gas exhaust
WO2009148913A3 (en) Method for treating substrates
WO2008039465A3 (en) Method for removing surface deposits in the interior of a chemical vapor deposition reactor
ATE463852T1 (en) FUEL CELL HEATER AND METHOD FOR OPERATING A FUEL CELL HEATER
WO2009140172A3 (en) Selective inductive double patterning
TW200746294A (en) Processing apparatus and processing method
TW200739697A (en) Methods and apparatus for in-situ substrate processing
TW200710952A (en) Film formation method and apparatus for semiconductor process
WO2008082518A3 (en) Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
JP2007280802A5 (en)
KR20150005945A (en) Method and apparatus for warming up a vacuum pump arrangement
JP2007157432A5 (en)
CA2608839A1 (en) An airlift loop reactor without the need for external gases
TW200732502A (en) Method of treating a gas stream
WO2008080249A3 (en) Apparatus for gas handling in vacuum processes
TWI553148B (en) Apparatus for treating a gas stream
WO2009054232A1 (en) Semiconductor manufacturing apparatus, semiconductor manufacturing method, and electronic device
WO2007099530A3 (en) Integrated cooling system
WO2009071815A3 (en) Equipment for producing semiconductors and corresponding pumping device and substrate holder
TW200723358A (en) Process apparatus and transportation system thereof, and method of protecting pressure control valve
DE502006006042D1 (en) SEALING SYSTEM FOR SEALING A PROCESS GAS SPACE AGAINST A SEAL