JP2006165399A - Gas supply device, substrate processor, and method of setting gas to be supplied - Google Patents

Gas supply device, substrate processor, and method of setting gas to be supplied Download PDF

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JP2006165399A
JP2006165399A JP2004357292A JP2004357292A JP2006165399A JP 2006165399 A JP2006165399 A JP 2006165399A JP 2004357292 A JP2004357292 A JP 2004357292A JP 2004357292 A JP2004357292 A JP 2004357292A JP 2006165399 A JP2006165399 A JP 2006165399A
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gas
gas supply
branch pipe
pipe
supply device
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JP2006165399A5 (en
JP4358727B2 (en
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Kaneyoshi Mizusawa
兼悦 水澤
Yoshitaka Ito
恵貴 伊藤
Masahide Ito
昌秀 伊藤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2004357292A priority Critical patent/JP4358727B2/en
Priority to TW094143443A priority patent/TWI441254B/en
Priority to US11/296,209 priority patent/US20060124169A1/en
Priority to KR1020050119216A priority patent/KR100753692B1/en
Priority to CNB2005101303873A priority patent/CN100390933C/en
Publication of JP2006165399A publication Critical patent/JP2006165399A/en
Publication of JP2006165399A5 publication Critical patent/JP2006165399A5/ja
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Priority to US12/651,165 priority patent/US8906193B2/en
Priority to US13/691,125 priority patent/US9441791B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To supply an arbitrary mixture gas to a plurality of locations in a treatment vessel with a simple piping structure. <P>SOLUTION: A gas supply device 100 is equipped with a first gas box 111 including a plurality of gas supply sources, and a second gas box 113 including a plurality of additional gas supply sources. A mixing pipe 120 is connected to each gas supply source, and branch pipes 122 and 123 communicating with different buffer chambers 63a and 63b are connected to the mixing pipe 120. Each of the branch pipes is equipped with a pressure regulator and a ratio in pressures is regulated by a pressure ratio controller 126. An additional gas supply pipe 130 communicating with the second gas box 113 is connected to the branch pipe 123 on the downstream of the pressure regulating part. Respective gases in the first gas box 111 are mixed in the mixing pipe 120 and branched via the branch pipes to be supplied to the respective buffer chambers. An additional gas in the second gas box 113 is added to the branch pipe 123, and a different mixture gas from that of the buffer 63a is supplied to the buffer chamber 63b. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は，処理容器にガスを供給するガス供給装置，当該ガス供給装置に接続される基板処理装置及び供給ガス設定方法に関する。   The present invention relates to a gas supply apparatus that supplies a gas to a processing container, a substrate processing apparatus connected to the gas supply apparatus, and a supply gas setting method.

例えば半導体装置や液晶表示装置等の電子デバイスの製造プロセスにおいては，例えば基板の表面に導電性の膜や絶縁膜を形成する成膜処理や，基板上に形成された膜を蝕刻するエッチング処理などが行われている。   For example, in the manufacturing process of an electronic device such as a semiconductor device or a liquid crystal display device, for example, a film forming process for forming a conductive film or an insulating film on the surface of a substrate, an etching process for etching a film formed on the substrate, etc. Has been done.

例えば，上述のエッチング処理には，プラズマエッチング装置が広く用いられている。プラズマエッチング装置は，基板を収容する処理容器内に，基板を載置する下部電極と，下部電極の基板に向けてガスを噴出するシャワーヘッドを有している。シャワーヘッドは，上部電極を構成している。エッチング処理は，シャワーヘッドから所定の混合ガスを噴出した状態で両電極間に高周波を印加し，処理容器内にプラズマを生成することによって，基板上の膜をエッチングしている。   For example, a plasma etching apparatus is widely used for the above etching process. The plasma etching apparatus includes a lower electrode on which a substrate is placed and a shower head that ejects gas toward the substrate of the lower electrode in a processing container that accommodates the substrate. The shower head constitutes the upper electrode. In the etching process, a film on the substrate is etched by applying a high frequency between both electrodes in a state where a predetermined mixed gas is ejected from the shower head and generating plasma in the processing container.

ところで，エッチングレートやエッチング選択比などのエッチング特性は，基板上に供給されるガス濃度に影響される。また，エッチング特性を基板面内において均一にし，基板面内のエッチングの均一性を向上することは，従来からの重要課題である。そこで，シャワーヘッドの内部を複数のガス室に仕切り，各ガス室毎にガス導入管を独立に接続し，基板面内の各部分に任意の種類或いは流量の混合ガスを供給することが提案されている（例えば，特許文献１参照。）。これにより，基板面内のガス濃度を局所的に調整して，エッチングの基板面内の均一性を向上することができる。   Incidentally, the etching characteristics such as the etching rate and the etching selectivity are affected by the concentration of gas supplied onto the substrate. Further, it has been an important problem from the past to make the etching characteristics uniform in the substrate surface and improve the uniformity of etching in the substrate surface. Therefore, it has been proposed to divide the inside of the shower head into a plurality of gas chambers, connect a gas introduction pipe to each gas chamber independently, and supply a mixed gas of any kind or flow rate to each part in the substrate surface. (For example, refer to Patent Document 1). Thereby, the gas concentration in the substrate surface can be locally adjusted to improve the uniformity of the etching substrate surface.

しかしながら，エッチング処理時に用いられる混合ガスは，例えば直接エッチングに関与するエッチングガスや，反応生成物のデポ（堆積）をコントロールするためのガス，不活性ガスなどのキャリアガスなどの多種類のガスの組み合わせにより構成され，被エッチング材料やプロセス条件に応じて選択される。このため，例えばシャワーヘッド内を複数のガス室を分割し，各ガス室毎にガス導入管を接続する場合，例えば特開平９−４５６２４号公報（特許文献２）の第１図に示すように各ガス導入管毎に，多数のガス供給源に通じる配管を接続し，さらに各配管毎にマスフローコントローラを設けるようにしていた。それ故，ガス供給系の配管構造が複雑化し，各配管のガス流量の制御も複雑化していた。このため，例えば広い配管スペースが必要になり，装置制御系の負担も増大していた。   However, the mixed gas used in the etching process includes various gases such as an etching gas directly involved in etching, a gas for controlling deposition of reaction products, and a carrier gas such as an inert gas. It is configured by a combination and is selected according to the material to be etched and process conditions. Therefore, for example, when a plurality of gas chambers are divided in the shower head and a gas introduction pipe is connected to each gas chamber, for example, as shown in FIG. 1 of Japanese Patent Laid-Open No. 9-45624 (Patent Document 2). For each gas introduction pipe, pipes leading to a large number of gas supply sources were connected, and a mass flow controller was provided for each pipe. Therefore, the piping structure of the gas supply system has become complicated, and the control of the gas flow rate of each pipe has also become complicated. For this reason, for example, a large piping space is required, and the burden on the apparatus control system is increased.

特開平８-１５８０７２号公報JP-A-8-158072 特開平９-４５６２４号公報JP-A-9-45624

本発明は，かかる点に鑑みてなされたものであり，エッチング装置などの基板処理装置における処理容器の複数個所に任意の混合ガスを供給するにあたり，簡単な配管構成を実現できるガス供給装置と，ガス供給装置に接続された処理容器を備えた基板処理装置及びガス供給装置を用いた供給ガス設定方法を提供することをその目的とする。   The present invention has been made in view of the above points, and a gas supply device capable of realizing a simple piping configuration when supplying an arbitrary mixed gas to a plurality of locations in a processing vessel in a substrate processing apparatus such as an etching apparatus, It is an object of the present invention to provide a substrate processing apparatus provided with a processing container connected to a gas supply apparatus and a supply gas setting method using the gas supply apparatus.

上記目的を達成する本発明は，基板を処理する処理容器にガスを供給するガス供給装置であって，複数のガス供給源と，前記複数のガス供給源から供給される複数のガスを混合する混合配管と，前記混合配管で混合された混合ガスを分流して処理容器の複数箇所に供給する複数の分岐配管と，少なくとも一つの分岐配管を流れる混合ガスに所定の付加ガスを供給する付加ガス供給装置と，を備えたことを特徴とする。   The present invention for achieving the above object is a gas supply apparatus for supplying a gas to a processing vessel for processing a substrate, wherein a plurality of gas supply sources and a plurality of gases supplied from the plurality of gas supply sources are mixed. A mixed pipe, a plurality of branch pipes for diverting the mixed gas mixed in the mixed pipe and supplying the mixed gas to a plurality of locations of the processing vessel, and an additional gas for supplying a predetermined additional gas to the mixed gas flowing through at least one branch pipe And a supply device.

本発明によれば，複数のガス供給源のガスが混合配管において混合され，その後複数の分岐配管に分流される。そして，特定の分岐配管では，所定の付加ガスが付加され，混合ガスのガス成分や流量が調整される。付加ガスが付加されない分岐配管では，混合配管からの混合ガスがそのまま処理容器に供給される。かかる場合，例えば混合配管においてガス成分の共通な混合ガスが生成され，各分岐配管において，必要に応じて混合ガスのガス成分や流量が調整されるので，必要最小限の配管数で足りる。この結果，処理容器の複数個所への任意の混合ガスの供給を，単純な配管構成で実現できる。   According to the present invention, gases from a plurality of gas supply sources are mixed in the mixing pipe and then divided into the plurality of branch pipes. And in specific branch piping, predetermined additional gas is added and the gas component and flow volume of mixed gas are adjusted. In a branch pipe to which no additional gas is added, the mixed gas from the mixing pipe is supplied to the processing vessel as it is. In such a case, for example, a mixed gas having a common gas component is generated in the mixing pipe, and the gas component and flow rate of the mixed gas are adjusted in each branch pipe as necessary. As a result, supply of an arbitrary mixed gas to a plurality of locations in the processing vessel can be realized with a simple piping configuration.

前記ガス供給装置は，ガス流量を調整するためのバルブと圧力計を各分岐配管に備え，さらに，前記圧力計の計測結果に基づいて，前記バルブの開閉度を調整して，前記混合配管の混合ガスを所定の圧力比で前記分岐配管に分流する圧力比制御装置を備えていてもよい。かかる場合，分岐配管の流量が圧力比（分圧比）を基準に制御されるので，例えば分岐配管内の圧力が低い場合であっても，分岐配管の流量制御を適正に行うことができる。   The gas supply device includes a valve and a pressure gauge for adjusting a gas flow rate in each branch pipe, and further adjusts the degree of opening and closing of the valve based on the measurement result of the pressure gauge to You may provide the pressure ratio control apparatus which diverts mixed gas to the said branch piping by predetermined | prescribed pressure ratio. In such a case, since the flow rate of the branch pipe is controlled based on the pressure ratio (partial pressure ratio), for example, even when the pressure in the branch pipe is low, it is possible to appropriately control the flow rate of the branch pipe.

前記付加ガス供給装置は，前記分岐配管に連通する付加ガス供給配管を有し，前記付加ガス供給配管は，前記圧力計と前記バルブの下流側に接続されていてもよい。   The additional gas supply device may have an additional gas supply pipe communicating with the branch pipe, and the additional gas supply pipe may be connected to the downstream side of the pressure gauge and the valve.

前記圧力比制御装置は，前記付加ガス供給装置から分岐配管に前記付加ガスを供給しない状態で，前記各分岐配管に分流される混合ガスの圧力比を前記バルブにより所定の圧力比に調整し，その状態で前記バルブの開閉度を固定するようにしてもよい。   The pressure ratio control device adjusts the pressure ratio of the mixed gas divided into each branch pipe to a predetermined pressure ratio by the valve without supplying the additional gas from the additional gas supply device to the branch pipe, In this state, the opening / closing degree of the valve may be fixed.

前記ガス供給装置は，前記圧力比制御装置により前記分岐配管の混合ガスが所定の圧力比に調整された後に，前記付加ガス供給装置から前記分岐配管に付加ガスを供給する制御部をさらに備えていてもよい。   The gas supply device further includes a control unit that supplies additional gas from the additional gas supply device to the branch pipe after the mixed gas in the branch pipe is adjusted to a predetermined pressure ratio by the pressure ratio control device. May be.

別の観点による本発明によれば，請求項１〜５のいずれかに記載のガス供給装置における分岐配管に接続された処理容器を備えた基板処理装置が提供される。この基板処理装置は，減圧した状態で基板を処理する減圧処理装置であってもよい。   According to another aspect of the present invention, there is provided a substrate processing apparatus including a processing container connected to a branch pipe in a gas supply apparatus according to any one of claims 1 to 5. The substrate processing apparatus may be a reduced pressure processing apparatus that processes a substrate in a decompressed state.

上記基板処理装置は，基板を載置する載置部を有し，前記載置部に載置された基板の中央部と外周部に対し，異なる分岐配管からガスが供給されるようにしてもよい。   The substrate processing apparatus may have a placement portion for placing a substrate, and gas may be supplied from different branch pipes to the central portion and the outer peripheral portion of the substrate placed on the placement portion. Good.

別の観点による本発明は，請求項２又は３のいずれかに記載のガス供給装置を用いた供給ガス設定方法であって，付加ガス供給装置から分岐配管に付加ガスを供給しない状態で，混合配管から各分岐配管に分流される混合ガスの圧力比をバルブにより所定の混合比に調整し，その後分岐配管のバルブの開閉度を固定する工程と，その後，付加ガス供給装置から所定の分岐配管に所定流量の付加ガスを供給する工程と，を有することを特徴とする。   According to another aspect of the present invention, there is provided a supply gas setting method using the gas supply device according to any one of claims 2 and 3, wherein mixing is performed without supplying additional gas from the additional gas supply device to the branch pipe. A step of adjusting the pressure ratio of the mixed gas branched from the pipe to each branch pipe to a predetermined mixture ratio by a valve, and then fixing the opening / closing degree of the valve of the branch pipe, and then the predetermined branch pipe from the additional gas supply device And a step of supplying an additional gas at a predetermined flow rate.

本発明によれば，配管構成が単純化し，配管スペースの低減や流量制御の負担の低減が図られる。   According to the present invention, the piping configuration is simplified, and the piping space can be reduced and the burden of flow rate control can be reduced.

以下，本発明の好ましい実施の形態について説明する。図１は，本実施の形態にかかるガス供給装置が適用される基板処理装置としてのプラズマエッチング装置１の構成の概略を示す縦断面の説明図である。   Hereinafter, preferred embodiments of the present invention will be described. FIG. 1 is an explanatory view of a longitudinal section showing an outline of a configuration of a plasma etching apparatus 1 as a substrate processing apparatus to which a gas supply apparatus according to the present embodiment is applied.

プラズマエッチング装置１は，平行平板型電極構造の容量結合型のプラズマエッチング装置である。プラズマエッチング装置１は，略円筒形状の処理容器１０を有している。処理容器１０は，例えばアルミニウム合金により形成され，内壁面がアルミナ膜又はイットリウム酸化膜により被覆されている。処理容器１０は，接地されている。   The plasma etching apparatus 1 is a capacitively coupled plasma etching apparatus having a parallel plate electrode structure. The plasma etching apparatus 1 has a substantially cylindrical processing container 10. The processing vessel 10 is formed of, for example, an aluminum alloy, and the inner wall surface is covered with an alumina film or an yttrium oxide film. The processing container 10 is grounded.

処理容器１０内の中央の底部には，絶縁板１２を介在して円柱状のサセプタ支持台１４が設けられている。サセプタ支持台１４上には，基板としてのウェハＷを載置する載置部としてのサセプタ１６が支持されている。サセプタ１６は，平行平板型電極構造の下部電極を構成している。サセプタ１６は，例えばアルミニウム合金により形成されている。   A cylindrical susceptor support 14 is provided at the center bottom in the processing vessel 10 with an insulating plate 12 interposed. On the susceptor support 14, a susceptor 16 is supported as a placement portion on which a wafer W as a substrate is placed. The susceptor 16 constitutes a lower electrode having a parallel plate electrode structure. The susceptor 16 is made of, for example, an aluminum alloy.

サセプタ１６の上部には，ウェハＷを保持する静電チャック１８が設けられている。静電チャック１８は，内部に電極２０を有している。電極２０には，直流電源２２が電気的に接続されている。直流電源２２から電極２０に直流電圧を印加することによって，クーロン力を発生させ，サセプタ１６の上面にウェハＷを吸着できる。   An electrostatic chuck 18 that holds the wafer W is provided on the susceptor 16. The electrostatic chuck 18 has an electrode 20 inside. A DC power source 22 is electrically connected to the electrode 20. By applying a DC voltage from the DC power source 22 to the electrode 20, a Coulomb force can be generated and the wafer W can be attracted to the upper surface of the susceptor 16.

静電チャック１８の周囲のサセプタ１６の上面には，フォーカスリング２４が設けられている。サセプタ１６及びサセプタ支持台１４の外周面には，例えば石英からなる円筒状の内壁部材２６が貼り付けられている。   A focus ring 24 is provided on the upper surface of the susceptor 16 around the electrostatic chuck 18. A cylindrical inner wall member 26 made of, for example, quartz is attached to the outer peripheral surfaces of the susceptor 16 and the susceptor support base 14.

サセプタ支持台１４の内部には，リング状の冷媒室２８が形成されている。冷媒室２８は，配管３０ａ，３０ｂを通じて，処理容器１０の外部に設置されたチラーユニット（図示せず）に連通している。冷媒室２８には，配管３０ａ，３０ｂを通じて冷媒又は冷却水が循環供給され，この循環供給によりサセプタ１６上のウェハＷの温度を制御できる。静電チャック１８の上面には，サセプタ１６及びサセプタ支持台１４内を通るガス供給ライン３２が通じており，ウェハＷと静電チャック１８との間にＨｅガスなどの伝熱ガスを供給できる。   A ring-shaped refrigerant chamber 28 is formed inside the susceptor support 14. The refrigerant chamber 28 communicates with a chiller unit (not shown) installed outside the processing container 10 through the pipes 30a and 30b. The coolant or cooling water is circulated and supplied to the coolant chamber 28 through the pipes 30a and 30b, and the temperature of the wafer W on the susceptor 16 can be controlled by this circulation supply. A gas supply line 32 passing through the susceptor 16 and the susceptor support 14 is connected to the upper surface of the electrostatic chuck 18, and a heat transfer gas such as He gas can be supplied between the wafer W and the electrostatic chuck 18.

サセプタ１６の上方には，サセプタ１６と平行に対向する上部電極３４が設けられている。サセプタ１６と上部電極３４との間には，プラズマ生成空間ＰＳが形成されている。   Above the susceptor 16, an upper electrode 34 facing the susceptor 16 in parallel is provided. A plasma generation space PS is formed between the susceptor 16 and the upper electrode 34.

上部電極３４は，リング状の外側上部電極３６と，その内側の円板形状の内側上部電極３８を備えている。外側上部電極３６と内側上部電極３８との間には，リング状の誘電体４２が介在されている。外側上部電極３６と処理容器１０の内周壁との間には，例えばアルミナからなるリング状の絶縁性遮蔽部材４４が気密に介在されている。   The upper electrode 34 includes a ring-shaped outer upper electrode 36 and a disk-shaped inner upper electrode 38 inside thereof. A ring-shaped dielectric 42 is interposed between the outer upper electrode 36 and the inner upper electrode 38. A ring-shaped insulating shielding member 44 made of alumina, for example, is airtightly interposed between the outer upper electrode 36 and the inner peripheral wall of the processing container 10.

外側上部電極３６には，整合器４６，上部給電棒４８，コネクタ５０及び給電筒５２を介して第１の高周波電源５４が電気的に接続されている。第１の高周波電源５４は，４０ＭＨｚ以上，例えば６０ＭＨｚの周波数の高周波電圧を出力できる。   A first high-frequency power source 54 is electrically connected to the outer upper electrode 36 through a matching unit 46, an upper power feed rod 48, a connector 50, and a power feed cylinder 52. The first high frequency power supply 54 can output a high frequency voltage having a frequency of 40 MHz or more, for example, 60 MHz.

給電筒５２は，例えば下面が開口した略円筒状に形成され，下端部が外側上部電極３６に接続されている。給電筒５２の上面の中央部には，コネクタ５０によって上部給電棒４８の下端部が電気的に接続されている。上部給電棒４８の上端部は，整合器４６の出力側に接続されている。整合器４６は，第１の高周波電源５４に接続されており，第１の高周波電源５４の内部インピーダンスと負荷インピーダンスを整合させることができる。給電筒５２の外方は，処理容器１０と同じ径の側壁を有する円筒状の接地導体１０ａにより覆われている。接地導体１０ａの下端部は，処理容器１０の側壁の上部に接続されている。接地導体１０ａの上面の中央部には，上述の上部給電棒４８が貫通しており，接地導体１０ａと上部給電棒４８の接触部には，絶縁部材５６が介在されている。   The power supply cylinder 52 is formed in, for example, a substantially cylindrical shape having an open bottom surface, and a lower end portion is connected to the outer upper electrode 36. A lower end portion of the upper power supply rod 48 is electrically connected to the central portion of the upper surface of the power supply cylinder 52 by a connector 50. The upper end portion of the upper power feed rod 48 is connected to the output side of the matching unit 46. The matching unit 46 is connected to the first high-frequency power source 54 and can match the internal impedance of the first high-frequency power source 54 with the load impedance. The outside of the power supply cylinder 52 is covered with a cylindrical ground conductor 10 a having a side wall with the same diameter as the processing container 10. The lower end of the ground conductor 10 a is connected to the upper part of the side wall of the processing container 10. The upper power feed rod 48 described above passes through the center portion of the upper surface of the ground conductor 10a, and an insulating member 56 is interposed at the contact portion between the ground conductor 10a and the upper power feed rod 48.

内側上部電極３８は，サセプタ１６に載置されたウェハＷ上に所定の混合ガスを噴出するシャワーヘッドを構成している。内側上部電極３８は，多数のガス噴出孔６０ａを有する円形状の電極板６０と，電極板６０の上面側を着脱自在に支持する電極支持体６２を備えている。電極支持体６２は，電極板６０と同じ径の円盤形状に形成され，内部に円形状のバッファ室６３が形成されている。バッファ室６３内には，例えば図２に示すようにＯリングからなる環状隔壁部材６４が設けられ，バッファ室６３を中心部側の第１のバッファ室６３ａと外周部側の第２のバッファ室６３ｂに分割している。第１のバッファ室６３ａは，サセプタ１６上のウェハＷの中央部に対向し，第２のバッファ室６３ｂは，サセプタ１６上のウェハＷの外周部に対向している。各バッファ室６３ａ，６３ｂの下面には，ガス噴出孔６０ａが連通しており，第１のバッファ室６３ａからは，ウェハＷの中央部に，第２のバッファ室６３ｂからは，ウェハＷの外周部に向けて所定の混合ガスを噴出できる。なお，各バッファ室６３に所定の混合ガスを供給するガス供給装置１００については後述する。   The inner upper electrode 38 constitutes a shower head that ejects a predetermined mixed gas onto the wafer W placed on the susceptor 16. The inner upper electrode 38 includes a circular electrode plate 60 having a large number of gas ejection holes 60a, and an electrode support 62 that detachably supports the upper surface side of the electrode plate 60. The electrode support 62 is formed in a disk shape having the same diameter as the electrode plate 60, and a circular buffer chamber 63 is formed therein. In the buffer chamber 63, for example, as shown in FIG. 2, an annular partition member 64 made of an O-ring is provided. The buffer chamber 63 has a first buffer chamber 63a on the central side and a second buffer chamber on the outer peripheral side. It is divided into 63b. The first buffer chamber 63 a faces the center of the wafer W on the susceptor 16, and the second buffer chamber 63 b faces the outer periphery of the wafer W on the susceptor 16. Gas ejection holes 60a communicate with the lower surfaces of the buffer chambers 63a and 63b. From the first buffer chamber 63a to the center of the wafer W and from the second buffer chamber 63b to the outer periphery of the wafer W. A predetermined mixed gas can be ejected toward the portion. The gas supply device 100 that supplies a predetermined mixed gas to each buffer chamber 63 will be described later.

電極支持体６２の上面には，図１に示すように上部給電棒４８に接続された下部給電筒７０が電気的に接続されている。下部給電筒７０には，可変コンデンサ７２が設けられている。可変コンデンサ７２は，第１の高周波電源５４による高周波電圧により外側上部電極３６の直下に形成される電界強度と，内側上部電極３８の直下に形成される電界強度との相対的な比率を調整できる。   As shown in FIG. 1, a lower power supply cylinder 70 connected to the upper power supply rod 48 is electrically connected to the upper surface of the electrode support 62. A variable capacitor 72 is provided in the lower feeding cylinder 70. The variable capacitor 72 can adjust the relative ratio between the electric field strength formed immediately below the outer upper electrode 36 and the electric field strength formed immediately below the inner upper electrode 38 by the high-frequency voltage from the first high-frequency power supply 54. .

処理容器１０の底部には，排気口７４が形成されている。排気口７４は，排気管７６を通じて，真空ポンプなどを備えた排気装置７８に接続されている。排気装置７８により，処理容器１０内の所望の真空度に減圧できる。   An exhaust port 74 is formed at the bottom of the processing container 10. The exhaust port 74 is connected through an exhaust pipe 76 to an exhaust device 78 having a vacuum pump or the like. The exhaust device 78 can reduce the pressure in the processing container 10 to a desired degree of vacuum.

サセプタ１６には，整合器８０を介して第２の高周波電源８２が電気的に接続されている。第２の高周波電源８２は，例えば２ＭＨｚ〜２０ＭＨｚの範囲，例えば２０ＭＨｚの周波数の高周波電圧を出力できる。   A second high frequency power supply 82 is electrically connected to the susceptor 16 via a matching unit 80. The second high-frequency power source 82 can output a high-frequency voltage having a frequency of, for example, 2 MHz to 20 MHz, for example, 20 MHz.

内側上部電極３８には，第１の高周波電源５４からの高周波を遮断し，第２の高周波電源８２からの高周波をグランドに通すためのローパスフィルタ８４が電気的に接続されている。サセプタ１６には，第１の高周波電源５４からの高周波をグランドに通すためのハイパスフィルタ８６が電気的に接続されている。   The inner upper electrode 38 is electrically connected to a low-pass filter 84 for cutting off the high frequency from the first high frequency power supply 54 and passing the high frequency from the second high frequency power supply 82 to the ground. The susceptor 16 is electrically connected to a high pass filter 86 for passing a high frequency from the first high frequency power supply 54 to the ground.

プラズマエッチング装置１には，直流電源２２，第１の高周波電源５４及び第２の高周波電源８２などのエッチング処理を実行するための各種諸元の動作を制御する装置制御部９０が設けられている。   The plasma etching apparatus 1 is provided with an apparatus control unit 90 that controls the operation of various specifications for performing an etching process such as the DC power supply 22, the first high-frequency power supply 54, and the second high-frequency power supply 82. .

次に，プラズマエッチング装置１の内側上部電極３８に混合ガスを供給するガス供給装置１００について説明する。   Next, the gas supply apparatus 100 that supplies a mixed gas to the inner upper electrode 38 of the plasma etching apparatus 1 will be described.

ガス供給装置１００は，図３に示すように複数，例えば３つのガス供給源１１０ａ，１１０ｂ，１１０ｃが収容された第１のガスボックス１１１と，複数，例えば２つの付加ガス供給源１１２ａ，１１２ｂが収容された第２のガスボックス１１３を備えている。本実施の形態においては，例えばガス供給源１１０ａには，エッチングガスとしての例えばフロロカーボン系のフッ素化合物，例えばＣＦ４，Ｃ４Ｆ６，Ｃ４Ｆ８，Ｃ５Ｆ８などのＣＸＦＹガスが封入され，ガス供給源１１０ｂには，例えばＣＦ系の反応生成物のデポをコントロールするガスとしての例えばＯ２ガスが封入され，ガス供給源１１０ｃには，キャリアガスとしての希ガス，例えばＡｒガスが封入されている。また，付加ガス供給源１１２ａには，例えばエッチングを促進可能なＣＸＦＹガスが封入され，付加ガス供給源１１２ｂには，例えばＣＦ系の反応生成物のデポをコントロール可能なＯ２ガスが封入されている。 As shown in FIG. 3, the gas supply apparatus 100 includes a first gas box 111 in which a plurality of, for example, three gas supply sources 110a, 110b, and 110c are accommodated, and a plurality of, for example, two additional gas supply sources 112a and 112b. A second gas box 113 is provided. In the present embodiment, for example, the gas supply source 110a includes, for example, a fluorocarbon-based fluorine compound as an etching gas, such as C X F Y such as CF 4 , C 4 F 6 , C 4 F 8 , and C 5 F 8. For example, O 2 gas as a gas for controlling the deposition of a CF-based reaction product, for example, is sealed in the gas supply source 110b, and a rare gas as a carrier gas, for example, Ar gas is enclosed. The additional gas supply source 112a is filled with, for example, C X F Y gas capable of promoting etching, and the additional gas supply source 112b is filled with, for example, O 2 gas capable of controlling the deposition of a CF-based reaction product. It is enclosed.

第１のガスボックス１１１の各ガス供給源１１０ａ〜１１０ｃには，各ガス供給源１１０ａ〜１１０ｃからの各種ガスが合流され混合される混合配管１２０が接続されている。混合配管１２０には，各ガス供給源１１０ａ〜１１０ｃからのガスの流量を調整するマスフローコントローラ１２１がガス供給源毎に設けられている。混合配管１２０には，混合配管１２０で混合された混合ガスを分流する第１の分岐配管１２２と第２の分岐配管１２３が接続されている。第１の分岐配管１２２は，上記処理容器１０の内側上部電極３８の第１のバッファ室６３ａに接続されている。第２の分岐配管１２３は，内側上部電極３８の第２のバッファ室６３ｂに接続されている。   The gas supply sources 110a to 110c of the first gas box 111 are connected to a mixing pipe 120 where various gases from the gas supply sources 110a to 110c are merged and mixed. The mixing pipe 120 is provided with a mass flow controller 121 for adjusting the gas flow rate from each of the gas supply sources 110a to 110c for each gas supply source. The mixing pipe 120 is connected to a first branch pipe 122 and a second branch pipe 123 that divide the mixed gas mixed in the mixing pipe 120. The first branch pipe 122 is connected to the first buffer chamber 63 a of the inner upper electrode 38 of the processing container 10. The second branch pipe 123 is connected to the second buffer chamber 63 b of the inner upper electrode 38.

第１の分岐配管１２２には，圧力調整部１２４が設けられている。同様に第２の分岐配管１２３には，圧力調整部１２５が設けられている。圧力調整部１２４は，圧力計１２４ａとバルブ１２４ｂを備えている。同様に圧力調整部１２５は，圧力計１２５ａとバルブ１２５ｂを備えている。圧力調整部１２４の圧力計１２４ａによる計測結果と，圧力調整部１２５の圧力計１２５ａによる計測結果は，圧力比制御装置１２６に出力できる。圧力比制御装置１２６は，圧力計１２４ａ，１２５ａの計測結果に基づいて，各バルブ１２４ｂ，１２５ｂの開閉度を調整し，第１の分岐配管１２２と第２の分岐配管１２３に分流される混合ガスの圧力比，つまり流量比を制御できる。また，圧力比制御装置１２６は，供給ガスの設定時において，後述する第２のガスボックス１１３から第２の分岐配管１２３に付加ガスが供給されていない状態で，第１の分岐配管１２２と第２の分岐配管１２３を流れる混合ガスの圧力比を所定の目標圧力比に調整し，その状態でバルブ１２４ｂ，１２５ｂの開閉度を固定することができる。   The first branch pipe 122 is provided with a pressure adjustment unit 124. Similarly, a pressure adjusting unit 125 is provided in the second branch pipe 123. The pressure adjustment unit 124 includes a pressure gauge 124a and a valve 124b. Similarly, the pressure adjustment unit 125 includes a pressure gauge 125a and a valve 125b. The measurement result by the pressure gauge 124 a of the pressure adjustment unit 124 and the measurement result by the pressure gauge 125 a of the pressure adjustment unit 125 can be output to the pressure ratio control device 126. The pressure ratio control device 126 adjusts the degree of opening and closing of the valves 124b and 125b based on the measurement results of the pressure gauges 124a and 125a, and the mixed gas is divided into the first branch pipe 122 and the second branch pipe 123. The pressure ratio, that is, the flow rate ratio can be controlled. Further, the pressure ratio control device 126 is connected to the first branch pipe 122 and the first branch pipe 122 in a state in which no additional gas is supplied from the second gas box 113 described later to the second branch pipe 123 when the supply gas is set. The pressure ratio of the mixed gas flowing through the second branch pipe 123 can be adjusted to a predetermined target pressure ratio, and the degree of opening and closing of the valves 124b and 125b can be fixed in this state.

第２のガスボックス１１３の各付加ガス供給源１１２ａ，１１２ｂには，例えば第２の分岐配管１２３に連通する付加ガス供給配管１３０が接続されている。例えば付加ガス供給配管１３０は，各付加ガス供給源１１２ａ，１１２ｂに接続され，途中で集合して第２の分岐配管１２３に接続されている。付加ガス供給配管１３０は，圧力調整部１２５の下流側に接続されている。付加ガス供給配管１３０には，各付加ガス供給源１１２ａ，１１２ｂからの付加ガスの流量を調整するマスフローコントローラ１３１が付加ガス供給源毎に設けられている。かかる構成により，第２のガスボックス１１３の付加ガスを選択して或いは混合させて第２の分岐配管１２３に供給することができる。なお，本実施の形態では，第２のガスボックス１１３，付加ガス供給源１１２ａ，１１２ｂ，付加ガス供給配管１３０及びマスフローコントローラ１３１により付加ガス供給装置が構成されている。   For example, an additional gas supply pipe 130 communicating with the second branch pipe 123 is connected to each of the additional gas supply sources 112 a and 112 b of the second gas box 113. For example, the additional gas supply pipe 130 is connected to each of the additional gas supply sources 112a and 112b, and is gathered on the way and connected to the second branch pipe 123. The additional gas supply pipe 130 is connected to the downstream side of the pressure adjustment unit 125. The additional gas supply pipe 130 is provided with a mass flow controller 131 for adjusting the flow rate of the additional gas from each additional gas supply source 112a, 112b for each additional gas supply source. With this configuration, the additional gas in the second gas box 113 can be selected or mixed and supplied to the second branch pipe 123. In the present embodiment, the second gas box 113, the additional gas supply sources 112a and 112b, the additional gas supply pipe 130, and the mass flow controller 131 constitute an additional gas supply device.

第１のガスボックス１１１におけるマスフローコントローラ１２１と，第２のガスボックス１１３におけるマスフローコントローラ１３１の動作は，例えばプラズマエッチング装置１の装置制御部９０により制御されている。したがって，装置制御部９０により，第１のガスボックス１１１及び第２のガスボックス１１３からの各種ガスの供給の開始と停止，各種ガスのガス流量を制御できる。   The operations of the mass flow controller 121 in the first gas box 111 and the mass flow controller 131 in the second gas box 113 are controlled by, for example, the apparatus control unit 90 of the plasma etching apparatus 1. Therefore, the apparatus control unit 90 can control the start and stop of the supply of various gases from the first gas box 111 and the second gas box 113 and the gas flow rates of the various gases.

次に，以上のように構成されたガス供給装置１００の動作について説明する。図４は，処理容器１０に供給される混合ガスのガス成分や流量を設定する際のフロー図である。先ず，装置制御部９０の指示信号により，第１のガスボックス１１１内の予め設定されているガスが所定流量で混合配管１２０に流される（図４中の工程Ｓ１）。例えば，ガス供給源１１０ａ〜１１０ｃのＣＸＦＹガス，Ｏ２ガス及びＡｒガスがそれぞれ所定流量で供給され，混合配管１２０において混合されて，所定の混合比のＣＸＦＹガス，Ｏ２ガス及びＡｒガスからなる混合ガスが生成される。続いて，圧力比制御装置１２６により，圧力計１２４ａ，１２５ａの計測結果に基づいて，バルブ１２４ｂ，１２５ｂの開閉度が調整され，第１の分岐配管１２２及び第２の分岐配管１２３に流れる混合ガスの圧力比が目標圧力比に調整される（図４中の工程Ｓ２）。これにより，第１の分岐配管１２２を通じて第１のバッファ室６３ａに供給される混合ガスのガス成分（混合比）と流量が設定される。また，第２の分岐配管１２３が通じる第２のバッファ室６３ｂには，この時点で，少なくとも第１のバッファ室６３ａと同じ混合ガス，つまりエッチング処理が可能な混合ガスが供給されている。 Next, the operation of the gas supply apparatus 100 configured as described above will be described. FIG. 4 is a flowchart for setting the gas component and flow rate of the mixed gas supplied to the processing container 10. First, in accordance with an instruction signal from the apparatus control unit 90, a preset gas in the first gas box 111 is caused to flow through the mixing pipe 120 at a predetermined flow rate (step S1 in FIG. 4). For example, C X F Y gas, O 2 gas, and Ar gas from the gas supply sources 110a to 110c are respectively supplied at a predetermined flow rate, mixed in the mixing pipe 120, and C X F Y gas, O 2 having a predetermined mixing ratio. A mixed gas composed of gas and Ar gas is generated. Subsequently, the open / closed degree of the valves 124 b and 125 b is adjusted by the pressure ratio control device 126 based on the measurement results of the pressure gauges 124 a and 125 a, and the mixed gas flowing through the first branch pipe 122 and the second branch pipe 123. Is adjusted to the target pressure ratio (step S2 in FIG. 4). Thereby, the gas component (mixing ratio) and the flow rate of the mixed gas supplied to the first buffer chamber 63a through the first branch pipe 122 are set. At this time, at least the same mixed gas as that of the first buffer chamber 63a, that is, a mixed gas that can be etched is supplied to the second buffer chamber 63b through which the second branch pipe 123 communicates.

そして，第１の分岐配管１２２及び第２の分岐配管１２３に流れる混合ガスが目標圧力比に調整され安定すると，圧力比制御装置１２６により，圧力調整部１２４，１２５のバルブ１２４ｂ，１２５ｂの開閉度が固定される（図４中の工程Ｓ３）。バルブ１２４ｂ，１２５ｂの開閉度が固定されるのを見計らって，装置制御部９０の指示信号により，第２のガスボックス１１３から予め設定されている付加ガスが所定流量で付加ガス供給配管１３０に流される（図４中の工程Ｓ４）。この第２のガスボックス１１３からの付加ガスの供給を開始させるための指示信号は，装置制御部９０に予め設定された設定時間が経過することにより送信される。例えば付加ガス供給源１１２ａからエッチングを促進可能なＣＸＦＹガス，例えばＣＦ４ガスが所定の流量で供給され，第２の分岐配管１２３に合流される。これにより，第２の分岐配管１２３が連通する第２のバッファ室６３ｂには，第１のバッファ室６３ａよりもＣＦ４ガスの多い混合ガスが供給される。こうして，第２のバッファ室６３ｂに供給される混合ガスのガス成分及び流量が設定される。なお，この第２の分岐配管１２３への付加ガスの供給により第１の分岐配管１２２と第２の分岐配管１２３の圧力比は変動するが，バルブ１２４ｂ，１２５ｂが固定されているので，第１のバッファ室６３ａには，当初の流量の混合ガスが供給される。 When the mixed gas flowing in the first branch pipe 122 and the second branch pipe 123 is adjusted to the target pressure ratio and stabilized, the pressure ratio control device 126 opens and closes the valves 124b and 125b of the pressure adjusting sections 124 and 125. Is fixed (step S3 in FIG. 4). Assuming that the degree of opening and closing of the valves 124b and 125b is fixed, an additional gas set in advance from the second gas box 113 flows into the additional gas supply pipe 130 at a predetermined flow rate according to an instruction signal from the apparatus control unit 90. (Step S4 in FIG. 4). The instruction signal for starting the supply of the additional gas from the second gas box 113 is transmitted to the apparatus control unit 90 when a preset time has elapsed. For example, C X F Y gas capable of promoting etching, such as CF 4 gas, is supplied from the additional gas supply source 112 a at a predetermined flow rate, and is joined to the second branch pipe 123. As a result, a mixed gas containing more CF 4 gas than the first buffer chamber 63a is supplied to the second buffer chamber 63b with which the second branch pipe 123 communicates. Thus, the gas component and the flow rate of the mixed gas supplied to the second buffer chamber 63b are set. Although the pressure ratio between the first branch pipe 122 and the second branch pipe 123 varies due to the supply of additional gas to the second branch pipe 123, the valves 124b and 125b are fixed. The buffer chamber 63a is supplied with a mixed gas having an initial flow rate.

そして，プラズマエッチング装置１では，減圧雰囲気の下，サセプタ１６上のウェハＷの中心部付近には，第１のバッファ室６３ａからの混合ガスが供給され，ウェハＷの外周部には，第２のバッファ室６３ｂからのＣＦ４ガスの多い混合ガスが供給される。これにより，ウェハＷの外周部におけるエッチング特性がウェハＷの中心部に対して相対的に調整され，ウェハＷ面内のエッチング特性が均一になる。 In the plasma etching apparatus 1, the mixed gas from the first buffer chamber 63 a is supplied to the vicinity of the center of the wafer W on the susceptor 16 in a reduced-pressure atmosphere. The mixed gas containing a large amount of CF 4 gas is supplied from the buffer chamber 63b. As a result, the etching characteristics at the outer periphery of the wafer W are adjusted relative to the center of the wafer W, and the etching characteristics within the wafer W surface are uniform.

以上の実施の形態によれば，第１のガスボックスからの複数種類のガスが混合配管１２０で混合され，その混合ガスが第１の分岐配管１２２と第２の分岐配管１２３に分流して処理容器１０の第１のバッファ室６３ａと第２のバッファ室６３ｂに供給される。第２の分岐配管１２３には，エッチング特性を調整するための付加ガスが供給され，第２のバッファ室６３ｂには，第１のバッファ室６３ａと異なる成分で流量の混合ガスが供給される。このように，処理容器１０における第１のバッファ室６３ａと第２のバッファ室６３ｂに供給される混合ガスのガス成分や流量を，簡単な配管構成で任意に調整できる。   According to the above embodiment, a plurality of types of gas from the first gas box are mixed in the mixing pipe 120, and the mixed gas is divided into the first branch pipe 122 and the second branch pipe 123 for processing. The first buffer chamber 63a and the second buffer chamber 63b of the container 10 are supplied. The second branch pipe 123 is supplied with an additional gas for adjusting the etching characteristics, and the second buffer chamber 63b is supplied with a mixed gas having a flow rate different from that of the first buffer chamber 63a. Thus, the gas components and flow rates of the mixed gas supplied to the first buffer chamber 63a and the second buffer chamber 63b in the processing container 10 can be arbitrarily adjusted with a simple piping configuration.

また，第１の分岐配管１２２と第２の分岐配管１２３の流量を圧力調整部１２４，１２５により調整したので，プラズマエッチング装置１のようにガスの供給先の圧力が極めて低い場合であっても，供給配管の流量調整を適正に行うことができる。   Further, since the flow rates of the first branch pipe 122 and the second branch pipe 123 are adjusted by the pressure adjusting units 124 and 125, even when the pressure of the gas supply destination is extremely low as in the plasma etching apparatus 1. , The flow rate of the supply pipe can be adjusted appropriately.

以上の実施の形態において，第２の分岐配管１２３には，エッチングを促進可能なＣＦ４ガスを供給したが，例えばウェハＷの中心部よりも外周部の方がＣＦ系の反応生成物の堆積が多く，エッチングが遅れるような場合には，第２の分岐配管１２３に，ＣＦ系の反応生成物を除去するＯ２ガスを供給してもよい。また，第２の分岐配管１２３には，ＣＦ４ガスとＯ２ガスの両方を所定の混合比で混合して供給してもよい。 In the above embodiment, the CF 4 gas capable of promoting the etching is supplied to the second branch pipe 123. For example, the outer peripheral portion of the wafer W is deposited with a CF-based reaction product. If the etching is delayed, O 2 gas for removing the CF-based reaction product may be supplied to the second branch pipe 123. Further, both CF 4 gas and O 2 gas may be mixed and supplied to the second branch pipe 123 at a predetermined mixing ratio.

上記実施の形態では，第２のガスボックス１１３から第２の分岐配管１２３に付加ガスを供給するタイミングは，装置制御部９０における設定時間により予め設定されていたが，例えば装置制御部９０が圧力比制御装置１２６を通じて圧力計１２４ａ，１２５ｂによる計測値を監視し，所望の目標圧力比に安定した時点で，第２のガスボックス１１３側に指示信号を発信して，付加ガスの供給を開始してもよい。   In the above embodiment, the timing of supplying the additional gas from the second gas box 113 to the second branch pipe 123 is set in advance by the set time in the device control unit 90. The measured values by the pressure gauges 124a and 125b are monitored through the ratio control device 126, and when the desired target pressure ratio is stabilized, an instruction signal is transmitted to the second gas box 113 side to start the supply of additional gas. May be.

また，第２のガスボックス１１３の各付加ガス供給源１１２ａ，１１２ｂを，付加ガス供給配管１３０によって第１の分岐配管１２２側にも接続してもよい。こうすることにより，必要な場合には，第１のバッファ室６３に供給される混合ガスのガス成分や流量も微調整できる。   Further, the additional gas supply sources 112 a and 112 b of the second gas box 113 may be connected to the first branch pipe 122 side by the additional gas supply pipe 130. By doing so, the gas component and flow rate of the mixed gas supplied to the first buffer chamber 63 can be finely adjusted if necessary.

以上の実施の形態で記載した第２のガスボックス１１３には，ＣＦ４ガスとＯ２ガスの付加ガス供給源が設けられていたが，エッチングを促進したり抑制したりする他の付加ガス，例えばエッチングを促進するガスとして，ＣＨＦ３，ＣＨ２Ｆ２，ＣＨ３ＦなどのＣＸＨＹＦＺガス，ＣＦ系反応生成物をコントロールするガスとして，Ｎ２ガスやＣＯガス，希釈ガスとして，ＸｅガスやＨｅガスなどの付加ガス供給源が設けられてもよい。この他，以上の実施の形態で記載した第１のガスボックス１１１や第２のガスボックス１１３に収容されるガスのガス種や数は，被エッチング材料やプロセス条件などに応じて，任意に選択できる。 In the second gas box 113 described in the above embodiment, an additional gas supply source of CF 4 gas and O 2 gas is provided, but other additional gases that accelerate or suppress etching, For example, as a gas for promoting etching, C X H Y F Z gas such as CHF 3 , CH 2 F 2 , CH 3 F, a gas for controlling a CF-based reaction product, N 2 gas, CO gas, dilution gas, etc. , An additional gas supply source such as Xe gas or He gas may be provided. In addition, the gas type and the number of gases stored in the first gas box 111 and the second gas box 113 described in the above embodiments are arbitrarily selected according to the material to be etched, process conditions, and the like. it can.

以上の実施の形態で記載したガス供給装置１００は，処理容器１０における第１のバッファ室６３ａと第２のバッファ室６３ｂの二箇所に混合ガスを供給していたが，処理容器１０の三箇所以上に混合ガスを供給してもよい。図５は，かかる一例を示すものであり，例えば内側上部電極３８には，同心円状の３つのバッファ室６３が形成されている。つまり，内側上部電極３８の第２のバッファ室６３ｂのさらに外側に，環状の第３のバッファ室６３ｃが形成されている。この場合，混合配管１２０には，第１，第２の分岐配管１２２，１２３に加えて，さらに第３の分岐配管１５０が分岐されている。第３の分岐配管１５０は，第３のバッファ室６３ｃに接続されている。第３の分岐配管１５０には，他の分岐配管１２２，１２３と同様に圧力調整室１５１，圧力計１５１ａ及びバルブ１５１ｂが設けられている。また，この例のガス供給装置１００には，第３の分岐配管１５０に所定の付加ガスを供給するための第３のガスボックス１５２が設けられている。第３のガスボックス１５２は，例えば第２のガスボックス１１３と同様の構成を有し，ＣＦ４の付加ガス供給源１５３ａとＯ２ガスの付加ガス供給源１５３ｂを備えている。各付加ガス供給源１５３ａ，１５３ｂは，付加ガス供給配管１５４によって第３の分岐配管１５０に接続され，付加ガス供給配管１５４には，付加ガス供給源毎にマスフローコントローラ１５５が設けられている。なお，この他の部分の構成は，上記実施の形態と同様なので，説明を省略する。 In the gas supply apparatus 100 described in the above embodiment, the mixed gas is supplied to the two locations of the first buffer chamber 63a and the second buffer chamber 63b in the processing container 10. A mixed gas may be supplied as described above. FIG. 5 shows such an example. For example, the inner upper electrode 38 has three concentric buffer chambers 63 formed therein. That is, an annular third buffer chamber 63c is formed further outside the second buffer chamber 63b of the inner upper electrode 38. In this case, in addition to the first and second branch pipes 122 and 123, the third branch pipe 150 is further branched to the mixing pipe 120. The third branch pipe 150 is connected to the third buffer chamber 63c. Similar to the other branch pipes 122 and 123, the third branch pipe 150 is provided with a pressure adjustment chamber 151, a pressure gauge 151a, and a valve 151b. Further, the gas supply device 100 of this example is provided with a third gas box 152 for supplying a predetermined additional gas to the third branch pipe 150. The third gas box 152 has the same configuration as the second gas box 113, for example, and includes an additional gas supply source 153a for CF 4 and an additional gas supply source 153b for O 2 gas. Each additional gas supply source 153a, 153b is connected to the third branch pipe 150 by an additional gas supply pipe 154, and a mass flow controller 155 is provided for each additional gas supply source in the additional gas supply pipe 154. The configuration of the other parts is the same as that of the above embodiment, and the description is omitted.

そして，各バッファ室６３ａ〜６３ｃに混合ガスが供給される際には，第１のガスボックス１１１の例えばガス供給源１１０ａ〜１１０ｃのガスが混合配管１２０に供給され，混合された後，その混合ガスが３つの分岐配管１２２，１２３，１５０に分流される。圧力比制御装置１２６により，分岐配管１２２，１２３，１５０の圧力比が所定の目標圧力比に調整され，その後バルブ１２４ｂ，１２５ｂ，１５１ｂの開閉度が固定される。これにより，第１の分岐配管１２２が連通する第１のバッファ室６３ａの混合ガスのガス成分と流量が設定される。その後，第２のガスボックス１３３から付加ガス供給配管１３０を通じて所定種類の所定流量の付加ガスが第２の分岐配管１２３に供給され，また第３のガスボックス１５２から付加ガス供給配管１５４を通じて所定種類の所定流量の付加ガスが第３の分岐配管１５０に供給される。こうして，第２のバッファ室６３ｂ，第３のバッファ室６３ｃに供給される混合ガスのガス成分と流量が設定される。かかる場合においても，簡単な配管構成で，処理容器１０の三箇所に任意の混合ガスを供給できる。   When the mixed gas is supplied to each of the buffer chambers 63a to 63c, for example, the gas from the gas supply sources 110a to 110c in the first gas box 111 is supplied to the mixing pipe 120 and mixed, and then mixed. The gas is diverted to the three branch pipes 122, 123 and 150. The pressure ratio control device 126 adjusts the pressure ratio of the branch pipes 122, 123, and 150 to a predetermined target pressure ratio, and then the degree of opening and closing of the valves 124b, 125b, and 151b is fixed. As a result, the gas component and the flow rate of the mixed gas in the first buffer chamber 63a with which the first branch pipe 122 communicates are set. After that, a predetermined type of additional gas having a predetermined flow rate is supplied from the second gas box 133 through the additional gas supply pipe 130 to the second branch pipe 123, and from the third gas box 152 through the additional gas supply pipe 154. The additional gas having a predetermined flow rate is supplied to the third branch pipe 150. In this way, the gas components and flow rates of the mixed gas supplied to the second buffer chamber 63b and the third buffer chamber 63c are set. Even in such a case, an arbitrary mixed gas can be supplied to the three locations of the processing vessel 10 with a simple piping configuration.

以上の実施の形態では，ガス供給装置１００から供給された混合ガスが，処理容器１０の上部からウェハＷに向けて噴出されていたが，処理容器１０の他の部分，例えば処理容器１０におけるプラズマ生成空間ＰＳの側面からも混合ガスが噴出されてもよい。かかる場合，例えば図６に示すように上記第３の分岐配管１５０が処理容器１０の両側面に接続される。かかる場合，プラズマ生成空間ＰＳの上部と側部からそれぞれ所定の混合ガスを供給できるので，プラズマ生成空間ＰＳ内のガス濃度を調整し，ウェハ面内のエッチング特性の均一性をさらに向上することができる。   In the above embodiment, the mixed gas supplied from the gas supply apparatus 100 is ejected from the upper part of the processing container 10 toward the wafer W. However, plasma in another part of the processing container 10, for example, the processing container 10 is used. The mixed gas may also be ejected from the side surface of the generation space PS. In such a case, for example, as shown in FIG. 6, the third branch pipe 150 is connected to both side surfaces of the processing vessel 10. In such a case, since the predetermined mixed gas can be supplied from the upper part and the side part of the plasma generation space PS, the gas concentration in the plasma generation space PS can be adjusted to further improve the uniformity of the etching characteristics in the wafer surface. it can.

以上の実施の形態では，分岐配管の流量を圧力調整部により調整していたが，マスフローコントローラを用いてもよい。また，以上の実施の形態で記載したガス供給装置１００は，プラズマエッチング装置１に混合ガスを供給するものであったが，混合ガスが供給される他の基板処理装置，例えばプラズマＣＶＤ装置，スパッタリング装置，熱酸化装置などの成膜装置にも本発明は適用できる。さらに本発明は，ウェハ以外の例えばＦＰＤ（フラットパネルディスプレイ），フォトマスク用のマスクレチクルなどの他の基板処理装置やＭＥＭＳ(マイクロエレクトロメカニカルシステム)製造装置にも適用できる。   In the above embodiment, the flow rate of the branch pipe is adjusted by the pressure adjusting unit, but a mass flow controller may be used. Further, the gas supply apparatus 100 described in the above embodiment supplies a mixed gas to the plasma etching apparatus 1, but other substrate processing apparatuses to which the mixed gas is supplied, for example, a plasma CVD apparatus, sputtering, etc. The present invention can also be applied to film forming apparatuses such as an apparatus and a thermal oxidation apparatus. Furthermore, the present invention can also be applied to other substrate processing apparatuses such as FPD (Flat Panel Display), photomask mask reticles, and MEMS (micro electro mechanical system) manufacturing apparatuses other than wafers.

本発明は，基板の処理容器の複数個所に任意の混合ガスを供給する際に有用である。   The present invention is useful when supplying an arbitrary mixed gas to a plurality of locations in a substrate processing container.

プラズマエッチング装置の構成の概略を説明する縦断面図である。It is a longitudinal cross-sectional view explaining the outline of a structure of a plasma etching apparatus. 内側上部電極の横断面図である。It is a cross-sectional view of an inner upper electrode. ガス供給装置の構成の概略を説明する模式図である。It is a schematic diagram explaining the outline of a structure of a gas supply apparatus. 供給ガス設定時のフロー図である。It is a flowchart at the time of supply gas setting. 処理容器の三箇所に混合ガスを供給するガス供給装置の構成の概略を示す模式図である。It is a schematic diagram which shows the outline of a structure of the gas supply apparatus which supplies mixed gas to three places of a process container. 処理容器の側面から混合ガスを供給するガス供給装置の構成の概略を示す模式図である。It is a schematic diagram which shows the outline of a structure of the gas supply apparatus which supplies mixed gas from the side surface of a processing container.

符号の説明Explanation of symbols

１ プラズマエッチング装置
１０ 処理容器
３８ 内側上部電極
６３ バッファ室
９０ 装置制御部
１００ ガス供給装置
１１１ 第１のガスボックス
１１３ 第２のガスボックス
１２０ 混合配管
１２２ 第１の分岐配管
１２３ 第２の分岐配管
１２４，１２５ 圧力調整部
１３０ 付加ガス供給配管
１２６ 圧力比制御装置
Ｗ ウェハ DESCRIPTION OF SYMBOLS 1 Plasma etching apparatus 10 Processing container 38 Inner upper electrode 63 Buffer chamber 90 Apparatus control part 100 Gas supply apparatus 111 1st gas box 113 2nd gas box 120 Mixing piping 122 1st branch piping 123 2nd branch piping 124 , 125 Pressure adjusting unit 130 Additional gas supply piping 126 Pressure ratio control device W Wafer

Claims (9)

基板を処理する処理容器にガスを供給するガス供給装置であって，
複数のガス供給源と，
前記複数のガス供給源から供給される複数のガスを混合する混合配管と，
前記混合配管で混合された混合ガスを分流して処理容器の複数箇所に供給する複数の分岐配管と，
少なくとも一つの分岐配管を流れる混合ガスに所定の付加ガスを供給する付加ガス供給装置と，を備えたことを特徴とする，ガス供給装置。 A gas supply device for supplying a gas to a processing container for processing a substrate,
Multiple gas sources;
A mixing pipe for mixing a plurality of gases supplied from the plurality of gas supply sources;
A plurality of branch pipes for dividing the mixed gas mixed in the mixing pipe and supplying the mixed gas to a plurality of locations in the processing vessel;
And an additional gas supply device for supplying a predetermined additional gas to the mixed gas flowing through at least one branch pipe. ガス流量を調整するためのバルブと圧力計を各分岐配管に備え，
さらに，前記圧力計の計測結果に基づいて，前記バルブの開閉度を調整して，前記混合配管の混合ガスを所定の圧力比で前記分岐配管に分流する圧力比制御装置を備えたことを特徴とする，請求項１に記載のガス供給装置。 Each branch pipe is equipped with a valve and pressure gauge to adjust the gas flow rate.
And a pressure ratio control device that adjusts the degree of opening and closing of the valve based on the measurement result of the pressure gauge and diverts the mixed gas of the mixed pipe to the branch pipe at a predetermined pressure ratio. The gas supply device according to claim 1. 前記付加ガス供給装置は，前記分岐配管に連通する付加ガス供給配管を有し，
前記付加ガス供給配管は，前記圧力計と前記バルブの下流側に接続されていることを特徴とする，請求項２に記載のガス供給装置。 The additional gas supply device has an additional gas supply pipe communicating with the branch pipe;
The gas supply device according to claim 2, wherein the additional gas supply pipe is connected to the downstream side of the pressure gauge and the valve. 前記圧力比制御装置は，前記付加ガス供給装置から分岐配管に前記付加ガスを供給しない状態で，前記各分岐配管に分流される混合ガスの圧力比を前記バルブにより所定の圧力比に調整し，その状態で前記バルブの開閉度を固定することを特徴とする，請求項３に記載のガス供給装置。 The pressure ratio control device adjusts the pressure ratio of the mixed gas divided into each branch pipe to a predetermined pressure ratio by the valve without supplying the additional gas from the additional gas supply device to the branch pipe, 4. The gas supply device according to claim 3, wherein the degree of opening and closing of the valve is fixed in that state. 前記圧力比制御装置により前記分岐配管の混合ガスが所定の圧力比に調整された後に，前記付加ガス供給装置から前記分岐配管に付加ガスを供給する制御部をさらに備えたことを特徴とする，請求項４に記載のガス供給装置。 The apparatus further comprises a control unit that supplies additional gas from the additional gas supply device to the branch pipe after the mixed gas in the branch pipe is adjusted to a predetermined pressure ratio by the pressure ratio control device. The gas supply device according to claim 4. 請求項１〜５のいずれかに記載のガス供給装置における分岐配管に接続された処理容器を備えた基板処理装置。 The substrate processing apparatus provided with the processing container connected to the branch piping in the gas supply apparatus in any one of Claims 1-5. 請求項６に記載の基板処理装置は，減圧した状態で基板を処理する減圧処理装置である。 The substrate processing apparatus according to claim 6 is a reduced pressure processing apparatus for processing a substrate in a decompressed state. 基板を載置する載置部を有し，
前記載置部に載置された基板の中央部と外周部に対し，異なる分岐配管からガスが供給されていることを特徴とする，請求項６又は７のいずれかに記載の基板処理装置。 A mounting portion for mounting the substrate;
8. The substrate processing apparatus according to claim 6, wherein gas is supplied from different branch pipes to a central portion and an outer peripheral portion of the substrate placed on the placement portion. 請求項２又は３のいずれかに記載のガス供給装置を用いた供給ガス設定方法であって，
付加ガス供給装置から分岐配管に付加ガスを供給しない状態で，混合配管から各分岐配管に分流される混合ガスの圧力比をバルブにより所定の混合比に調整し，その後分岐配管のバルブの開閉度を固定する工程と，
その後，付加ガス供給装置から所定の分岐配管に所定流量の付加ガスを供給する工程と，を有することを特徴とする，供給ガス設定方法。 A supply gas setting method using the gas supply device according to claim 2,
With no additional gas supplied from the additional gas supply device to the branch pipe, the pressure ratio of the mixed gas branched from the mixed pipe to each branch pipe is adjusted to the specified mixing ratio by the valve, and then the degree of opening and closing of the branch pipe valve Fixing the
And a step of supplying a predetermined flow rate of the additional gas from the additional gas supply device to the predetermined branch pipe.
JP2004357292A 2004-12-09 2004-12-09 Gas supply apparatus, substrate processing apparatus, and supply gas setting method Expired - Fee Related JP4358727B2 (en)

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KR1020050119216A KR100753692B1 (en) 2004-12-09 2005-12-08 Gas supply unit, substrate processing apparatus and supply gas setting method
TW094143443A TWI441254B (en) 2004-12-09 2005-12-08 A gas supply device, a substrate processing device, and a supply gas setting method
CNB2005101303873A CN100390933C (en) 2004-12-09 2005-12-09 Gas supply unit, substrate processing apparatus, and supply gas setting method
US12/651,165 US8906193B2 (en) 2004-12-09 2009-12-31 Gas supply unit, substrate processing apparatus and supply gas setting method
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