JP2006165399A5 - - Google Patents
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- JP2006165399A5 JP2006165399A5 JP2004357292A JP2004357292A JP2006165399A5 JP 2006165399 A5 JP2006165399 A5 JP 2006165399A5 JP 2004357292 A JP2004357292 A JP 2004357292A JP 2004357292 A JP2004357292 A JP 2004357292A JP 2006165399 A5 JP2006165399 A5 JP 2006165399A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- gas supply
- branch pipe
- supply device
- pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000007789 gas Substances 0.000 claims 63
- 239000000758 substrate Substances 0.000 claims 10
- 238000005259 measurement Methods 0.000 claims 2
- 238000007599 discharging Methods 0.000 claims 1
- 230000002093 peripheral Effects 0.000 claims 1
Claims (13)
複数のガス供給源と,
前記複数のガス供給源から供給される複数のガスを混合する混合配管と,
前記混合配管で混合された混合ガスを分流して処理容器の複数箇所に供給する複数の分岐配管と,
少なくとも一つの分岐配管を流れる混合ガスに所定の付加ガスを供給する付加ガス供給装置と,を備え,
ガス流量を調整するためのバルブと圧力計を各分岐配管に備え,
さらに,前記圧力計の計測結果に基づいて,前記バルブの開閉度を調整して,前記混合配管の混合ガスを所定の圧力比で前記分岐配管に分流する圧力比制御装置を備えた
ことを特徴とする,ガス供給装置。 A gas supply device for supplying a gas to a processing container for processing a substrate,
Multiple gas sources;
A mixing pipe for mixing a plurality of gases supplied from the plurality of gas supply sources;
A plurality of branch pipes for diverting the mixed gas mixed in the mixing pipe and supplying the mixed gas to a plurality of locations in the processing vessel;
An additional gas supply device for supplying a predetermined additional gas to the mixed gas flowing through at least one branch pipe ,
Each branch pipe is equipped with a valve and pressure gauge to adjust the gas flow rate.
And a pressure ratio control device for adjusting a degree of opening and closing of the valve based on a measurement result of the pressure gauge and diverting a mixed gas of the mixing pipe to the branch pipe at a predetermined pressure ratio. Gas supply device.
前記付加ガス供給配管は,前記圧力計と前記バルブの下流側に接続されていることを特徴とする,請求項1に記載のガス供給装置。The gas supply device according to claim 1, wherein the additional gas supply pipe is connected to the downstream side of the pressure gauge and the valve.
複数のガス供給源と,Multiple gas sources;
前記複数のガス供給源から供給される複数のガスを混合する混合配管と,A mixing pipe for mixing a plurality of gases supplied from the plurality of gas supply sources;
前記混合配管で混合された混合ガスを分流して処理容器の複数箇所に供給する複数の分岐配管と,A plurality of branch pipes for dividing the mixed gas mixed in the mixing pipe and supplying the mixed gas to a plurality of locations in the processing vessel;
少なくとも一つの分岐配管を流れる混合ガスに所定の付加ガスを供給する付加ガス供給装置と,を備え,An additional gas supply device for supplying a predetermined additional gas to the mixed gas flowing through at least one branch pipe,
前記処理容器内に配置され,前記処理容器内の処理空間にガスを吐出させるためのシャワーヘッドを有し,A shower head disposed in the processing vessel, for discharging gas into the processing space in the processing vessel;
前記複数の分岐配管は,前記シャワーヘッドに接続されることを特徴とする基板処理装置。The substrate processing apparatus, wherein the plurality of branch pipes are connected to the shower head.
さらに,前記圧力計の計測結果に基づいて,前記バルブの開閉度を調整して,前記混合配管の混合ガスを所定の圧力比で前記分岐配管に分流する圧力比制御装置を備えたことを特徴とする,請求項5に記載の基板処理装置。And a pressure ratio control device that adjusts the degree of opening and closing of the valve based on the measurement result of the pressure gauge and diverts the mixed gas of the mixed pipe to the branch pipe at a predetermined pressure ratio. The substrate processing apparatus according to claim 5.
前記付加ガス供給配管は,前記圧力計と前記バルブの下流側に接続されていることを特徴とする,請求項6に記載の基盤処理装置。The substrate processing apparatus according to claim 6, wherein the additional gas supply pipe is connected to the downstream side of the pressure gauge and the valve.
前記2本の分岐配管は,前記シャワーヘッド内部で同心円状に区画された第1,第2のバッファ室にそれぞれ接続されることを特徴とする,請求項9に記載の基板処理装置。The substrate processing apparatus according to claim 9, wherein the two branch pipes are connected to first and second buffer chambers concentrically partitioned inside the shower head.
前記付加ガス供給装置が接続された分岐配管は,前記第2のバッファ室に接続されることを特徴とする,請求項10に記載の基板処理装置。The substrate processing apparatus according to claim 10, wherein the branch pipe connected to the additional gas supply device is connected to the second buffer chamber.
前記複数の分岐配管の内少なくとも1つは,前記処理容器の側面から,前記シャワーヘッドと前記載置部とで形成される空間にガスを供給できるよう接続されることを特徴とする,請求項5に記載の基板処理装置。The at least one of the plurality of branch pipes is connected from a side surface of the processing vessel so that gas can be supplied to a space formed by the shower head and the mounting portion. 5. The substrate processing apparatus according to 5.
前記複数のガス供給源から供給される複数のガスを混合する混合配管と,A mixing pipe for mixing a plurality of gases supplied from the plurality of gas supply sources;
前記混合配管で混合された混合ガスを分流して処理容器の複数箇所に供給する複数の分岐配管と,A plurality of branch pipes for dividing the mixed gas mixed in the mixing pipe and supplying the mixed gas to a plurality of locations in the processing vessel;
少なくとも一つの分岐配管を流れる混合ガスに所定の付加ガスを供給する付加ガス供給装置と,を有し,An additional gas supply device for supplying a predetermined additional gas to the mixed gas flowing through at least one branch pipe,
ガス流量を調整するためのバルブと圧力計を各分岐配管に備えたガス供給装置を用いた供給ガス設定方法であって,A supply gas setting method using a gas supply device provided with a valve and a pressure gauge for adjusting a gas flow rate in each branch pipe,
前記付加ガス供給装置から前記分岐配管に付加ガスを供給しない状態で,前記混合配管から各分岐配管に分流される混合ガスの圧力比を前記バルブにより所定の混合比に調整し,その後前記分岐配管の前記バルブの開閉度を固定する工程と,The pressure ratio of the mixed gas branched from the mixing pipe to each branch pipe is adjusted to a predetermined mixing ratio by the valve without supplying additional gas from the additional gas supply device to the branch pipe, and then the branch pipe Fixing the opening / closing degree of the valve of
その後,付加前記ガス供給装置から所定の前記分岐配管に所定流量の付加ガスを供給する工程と,を有することを特徴とする,供給ガス設定方法。And a step of supplying a predetermined flow rate of the additional gas from the additional gas supply device to the predetermined branch pipe.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004357292A JP4358727B2 (en) | 2004-12-09 | 2004-12-09 | Gas supply apparatus, substrate processing apparatus, and supply gas setting method |
US11/296,209 US20060124169A1 (en) | 2004-12-09 | 2005-12-08 | Gas supply unit, substrate processing apparatus, and supply gas setting method |
TW094143443A TWI441254B (en) | 2004-12-09 | 2005-12-08 | A gas supply device, a substrate processing device, and a supply gas setting method |
KR1020050119216A KR100753692B1 (en) | 2004-12-09 | 2005-12-08 | Gas supply unit, substrate processing apparatus and supply gas setting method |
CNB2005101303873A CN100390933C (en) | 2004-12-09 | 2005-12-09 | Gas supply unit, substrate processing apparatus, and supply gas setting method |
US12/651,165 US8906193B2 (en) | 2004-12-09 | 2009-12-31 | Gas supply unit, substrate processing apparatus and supply gas setting method |
US13/691,125 US9441791B2 (en) | 2004-12-09 | 2012-11-30 | Gas supply unit, substrate processing apparatus and supply gas setting method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004357292A JP4358727B2 (en) | 2004-12-09 | 2004-12-09 | Gas supply apparatus, substrate processing apparatus, and supply gas setting method |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006165399A JP2006165399A (en) | 2006-06-22 |
JP2006165399A5 true JP2006165399A5 (en) | 2008-01-31 |
JP4358727B2 JP4358727B2 (en) | 2009-11-04 |
Family
ID=36667053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004357292A Expired - Fee Related JP4358727B2 (en) | 2004-12-09 | 2004-12-09 | Gas supply apparatus, substrate processing apparatus, and supply gas setting method |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4358727B2 (en) |
KR (1) | KR100753692B1 (en) |
CN (1) | CN100390933C (en) |
TW (1) | TWI441254B (en) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4550507B2 (en) | 2004-07-26 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
JP4895167B2 (en) * | 2006-01-31 | 2012-03-14 | 東京エレクトロン株式会社 | Gas supply apparatus, substrate processing apparatus, and gas supply method |
US20080078746A1 (en) | 2006-08-15 | 2008-04-03 | Noriiki Masuda | Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium |
JP5211450B2 (en) * | 2006-08-15 | 2013-06-12 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and storage medium |
JP5192214B2 (en) | 2007-11-02 | 2013-05-08 | 東京エレクトロン株式会社 | Gas supply apparatus, substrate processing apparatus, and substrate processing method |
JP5378706B2 (en) * | 2008-05-22 | 2013-12-25 | 東京エレクトロン株式会社 | Plasma processing apparatus and processing gas supply apparatus used therefor |
JP5452133B2 (en) * | 2009-08-27 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus and plasma processing method |
JP5562712B2 (en) * | 2010-04-30 | 2014-07-30 | 東京エレクトロン株式会社 | Gas supply equipment for semiconductor manufacturing equipment |
JP5689294B2 (en) | 2010-11-25 | 2015-03-25 | 東京エレクトロン株式会社 | Processing equipment |
JP5792563B2 (en) | 2011-08-31 | 2015-10-14 | 東京エレクトロン株式会社 | Plasma etching method and plasma etching apparatus |
JP2014003234A (en) * | 2012-06-20 | 2014-01-09 | Tokyo Electron Ltd | Plasma processing apparatus and plasma processing method |
JP6034655B2 (en) | 2012-10-25 | 2016-11-30 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP6030994B2 (en) | 2013-05-15 | 2016-11-24 | 東京エレクトロン株式会社 | Plasma etching apparatus and plasma etching method |
US9620417B2 (en) * | 2014-09-30 | 2017-04-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method of manufacturing fin-FET devices |
US20180149315A1 (en) * | 2015-05-17 | 2018-05-31 | Entegris, Inc. | Gas cabinets |
JP6502779B2 (en) * | 2015-07-29 | 2019-04-17 | 東京エレクトロン株式会社 | Method of inspecting leak of valve of gas supply system |
JP7073710B2 (en) | 2017-01-20 | 2022-05-24 | 東京エレクトロン株式会社 | Plasma processing equipment |
CH713539A1 (en) * | 2017-03-03 | 2018-09-14 | Pelco Sarl | Automatic gas mixer. |
JP7296854B2 (en) * | 2019-11-07 | 2023-06-23 | 東京エレクトロン株式会社 | Gas supply method and substrate processing apparatus |
CN117198848A (en) * | 2022-06-01 | 2023-12-08 | 长鑫存储技术有限公司 | Gas distribution device, plasma processing device and method |
CN114774887A (en) * | 2022-06-22 | 2022-07-22 | 拓荆科技(北京)有限公司 | Gas delivery device, method and semiconductor deposition equipment |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05136098A (en) * | 1991-11-15 | 1993-06-01 | Seiko Epson Corp | Apparatus and method for manufacturing semiconductor device |
US5916369A (en) * | 1995-06-07 | 1999-06-29 | Applied Materials, Inc. | Gas inlets for wafer processing chamber |
JPH09289170A (en) * | 1996-04-23 | 1997-11-04 | Sony Corp | Semiconductor manufacturing equipment |
US6210482B1 (en) * | 1999-04-22 | 2001-04-03 | Fujikin Incorporated | Apparatus for feeding gases for use in semiconductor manufacturing |
CN1240113C (en) * | 2002-08-20 | 2006-02-01 | 东京毅力科创株式会社 | Plasma etching method and device |
JP4127779B2 (en) * | 2002-08-28 | 2008-07-30 | 株式会社神戸製鋼所 | Hot isostatic pressurizing device and hot isostatic pressurizing method |
US20040050326A1 (en) * | 2002-09-12 | 2004-03-18 | Thilderkvist Karin Anna Lena | Apparatus and method for automatically controlling gas flow in a substrate processing system |
-
2004
- 2004-12-09 JP JP2004357292A patent/JP4358727B2/en not_active Expired - Fee Related
-
2005
- 2005-12-08 KR KR1020050119216A patent/KR100753692B1/en active IP Right Grant
- 2005-12-08 TW TW094143443A patent/TWI441254B/en not_active IP Right Cessation
- 2005-12-09 CN CNB2005101303873A patent/CN100390933C/en active Active
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