KR100712972B1 - 반도체 집적회로 장치 및 그 제조방법 - Google Patents

반도체 집적회로 장치 및 그 제조방법 Download PDF

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Publication number
KR100712972B1
KR100712972B1 KR1019990052132A KR19990052132A KR100712972B1 KR 100712972 B1 KR100712972 B1 KR 100712972B1 KR 1019990052132 A KR1019990052132 A KR 1019990052132A KR 19990052132 A KR19990052132 A KR 19990052132A KR 100712972 B1 KR100712972 B1 KR 100712972B1
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South Korea
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semiconductor
region
conductivity type
film
misfet
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KR1019990052132A
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English (en)
Korean (ko)
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KR20000047699A (ko
Inventor
오기시마아쯔시
오유키요노리
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엘피다 메모리 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/834—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1019990052132A 1998-12-01 1999-11-23 반도체 집적회로 장치 및 그 제조방법 Expired - Fee Related KR100712972B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP98-341599 1998-12-01
JP10341599A JP2000174225A (ja) 1998-12-01 1998-12-01 半導体集積回路装置およびその製造方法

Publications (2)

Publication Number Publication Date
KR20000047699A KR20000047699A (ko) 2000-07-25
KR100712972B1 true KR100712972B1 (ko) 2007-04-30

Family

ID=18347333

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990052132A Expired - Fee Related KR100712972B1 (ko) 1998-12-01 1999-11-23 반도체 집적회로 장치 및 그 제조방법

Country Status (4)

Country Link
US (1) US6734479B1 (https=)
JP (1) JP2000174225A (https=)
KR (1) KR100712972B1 (https=)
TW (1) TW462126B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232168B1 (en) * 2000-08-25 2001-05-15 Micron Technology, Inc. Memory circuitry and method of forming memory circuitry
JP2003031684A (ja) * 2001-07-11 2003-01-31 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP4068340B2 (ja) 2001-12-17 2008-03-26 エルピーダメモリ株式会社 半導体集積回路装置
US6921692B2 (en) * 2003-07-07 2005-07-26 Micron Technology, Inc. Methods of forming memory circuitry
US7838369B2 (en) * 2005-08-29 2010-11-23 National Semiconductor Corporation Fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applications
KR101116361B1 (ko) * 2010-02-26 2012-03-09 주식회사 하이닉스반도체 반도체 장치 제조 방법
US8785271B2 (en) * 2011-01-31 2014-07-22 GlobalFoundries, Inc. DRAM cell based on conductive nanochannel plate
JP5930650B2 (ja) 2011-10-07 2016-06-08 キヤノン株式会社 半導体装置の製造方法
US11264323B2 (en) * 2019-10-08 2022-03-01 Nanya Technology Corporation Semiconductor device and method for fabricating the same
TWI870393B (zh) * 2020-03-17 2025-01-21 聯華電子股份有限公司 半導體元件及其製作方法
KR20230106849A (ko) * 2022-01-07 2023-07-14 삼성전자주식회사 반도체 장치
KR20230144284A (ko) 2022-04-07 2023-10-16 삼성전자주식회사 반도체 장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980070397A (ko) * 1997-01-08 1998-10-26 니시무로타이조 반도체장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02214155A (ja) 1989-02-15 1990-08-27 Hitachi Ltd 半導体装置
JPH0458556A (ja) 1990-06-28 1992-02-25 Sony Corp 半導体装置
JPH0936318A (ja) 1995-07-18 1997-02-07 Fujitsu Ltd ダイナミックメモリ
JP3466851B2 (ja) * 1997-01-20 2003-11-17 株式会社東芝 半導体装置及びその製造方法
JPH1168105A (ja) * 1997-08-26 1999-03-09 Mitsubishi Electric Corp 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980070397A (ko) * 1997-01-08 1998-10-26 니시무로타이조 반도체장치
KR100317741B1 (ko) * 1997-01-08 2002-08-13 가부시끼가이샤 도시바 반도체장치

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
1003177410000
1019980070397 *

Also Published As

Publication number Publication date
JP2000174225A (ja) 2000-06-23
US6734479B1 (en) 2004-05-11
KR20000047699A (ko) 2000-07-25
TW462126B (en) 2001-11-01

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