JP2000174225A - 半導体集積回路装置およびその製造方法 - Google Patents

半導体集積回路装置およびその製造方法

Info

Publication number
JP2000174225A
JP2000174225A JP10341599A JP34159998A JP2000174225A JP 2000174225 A JP2000174225 A JP 2000174225A JP 10341599 A JP10341599 A JP 10341599A JP 34159998 A JP34159998 A JP 34159998A JP 2000174225 A JP2000174225 A JP 2000174225A
Authority
JP
Japan
Prior art keywords
integrated circuit
circuit device
mis transistor
semiconductor integrated
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10341599A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000174225A5 (https=
Inventor
Junji Ogishima
淳史 荻島
Shizunori Oyu
静憲 大湯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10341599A priority Critical patent/JP2000174225A/ja
Priority to TW088119931A priority patent/TW462126B/zh
Priority to KR1019990052132A priority patent/KR100712972B1/ko
Priority to US09/452,173 priority patent/US6734479B1/en
Publication of JP2000174225A publication Critical patent/JP2000174225A/ja
Publication of JP2000174225A5 publication Critical patent/JP2000174225A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/834—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP10341599A 1998-12-01 1998-12-01 半導体集積回路装置およびその製造方法 Pending JP2000174225A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP10341599A JP2000174225A (ja) 1998-12-01 1998-12-01 半導体集積回路装置およびその製造方法
TW088119931A TW462126B (en) 1998-12-01 1999-11-16 Semiconductor integrated circuit apparatus and its manufacturing method
KR1019990052132A KR100712972B1 (ko) 1998-12-01 1999-11-23 반도체 집적회로 장치 및 그 제조방법
US09/452,173 US6734479B1 (en) 1998-12-01 1999-12-01 Semiconductor integrated circuit device and the method of producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10341599A JP2000174225A (ja) 1998-12-01 1998-12-01 半導体集積回路装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2000174225A true JP2000174225A (ja) 2000-06-23
JP2000174225A5 JP2000174225A5 (https=) 2004-11-25

Family

ID=18347333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10341599A Pending JP2000174225A (ja) 1998-12-01 1998-12-01 半導体集積回路装置およびその製造方法

Country Status (4)

Country Link
US (1) US6734479B1 (https=)
JP (1) JP2000174225A (https=)
KR (1) KR100712972B1 (https=)
TW (1) TW462126B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030006982A (ko) * 2001-07-11 2003-01-23 가부시키가이샤 히타치세이사쿠쇼 반도체 집적회로장치 및 그 제조방법
US6812540B2 (en) 2001-12-17 2004-11-02 Hitachi, Ltd. Semiconductor integrated circuit device
US9082639B2 (en) 2011-10-07 2015-07-14 Canon Kabushiki Kaisha Manufacturing method of semiconductor device

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232168B1 (en) * 2000-08-25 2001-05-15 Micron Technology, Inc. Memory circuitry and method of forming memory circuitry
US6921692B2 (en) * 2003-07-07 2005-07-26 Micron Technology, Inc. Methods of forming memory circuitry
US7838369B2 (en) * 2005-08-29 2010-11-23 National Semiconductor Corporation Fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applications
KR101116361B1 (ko) * 2010-02-26 2012-03-09 주식회사 하이닉스반도체 반도체 장치 제조 방법
US8785271B2 (en) * 2011-01-31 2014-07-22 GlobalFoundries, Inc. DRAM cell based on conductive nanochannel plate
US11264323B2 (en) * 2019-10-08 2022-03-01 Nanya Technology Corporation Semiconductor device and method for fabricating the same
TWI870393B (zh) * 2020-03-17 2025-01-21 聯華電子股份有限公司 半導體元件及其製作方法
KR20230106849A (ko) * 2022-01-07 2023-07-14 삼성전자주식회사 반도체 장치
KR20230144284A (ko) 2022-04-07 2023-10-16 삼성전자주식회사 반도체 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02214155A (ja) 1989-02-15 1990-08-27 Hitachi Ltd 半導体装置
JPH0458556A (ja) 1990-06-28 1992-02-25 Sony Corp 半導体装置
JPH0936318A (ja) 1995-07-18 1997-02-07 Fujitsu Ltd ダイナミックメモリ
JP3272979B2 (ja) * 1997-01-08 2002-04-08 株式会社東芝 半導体装置
JP3466851B2 (ja) * 1997-01-20 2003-11-17 株式会社東芝 半導体装置及びその製造方法
JPH1168105A (ja) * 1997-08-26 1999-03-09 Mitsubishi Electric Corp 半導体装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030006982A (ko) * 2001-07-11 2003-01-23 가부시키가이샤 히타치세이사쿠쇼 반도체 집적회로장치 및 그 제조방법
JP2003031684A (ja) * 2001-07-11 2003-01-31 Hitachi Ltd 半導体集積回路装置およびその製造方法
US6900492B2 (en) 2001-07-11 2005-05-31 Hitachi, Ltd. Integrated circuit device with P-type gate memory cell having pedestal contact plug and peripheral circuit
US6812540B2 (en) 2001-12-17 2004-11-02 Hitachi, Ltd. Semiconductor integrated circuit device
US9082639B2 (en) 2011-10-07 2015-07-14 Canon Kabushiki Kaisha Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
KR100712972B1 (ko) 2007-04-30
US6734479B1 (en) 2004-05-11
KR20000047699A (ko) 2000-07-25
TW462126B (en) 2001-11-01

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