KR100699955B1 - 조명광학계, 노광장치 및 디바이스의 제조방법 - Google Patents

조명광학계, 노광장치 및 디바이스의 제조방법 Download PDF

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Publication number
KR100699955B1
KR100699955B1 KR1020050033539A KR20050033539A KR100699955B1 KR 100699955 B1 KR100699955 B1 KR 100699955B1 KR 1020050033539 A KR1020050033539 A KR 1020050033539A KR 20050033539 A KR20050033539 A KR 20050033539A KR 100699955 B1 KR100699955 B1 KR 100699955B1
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KR
South Korea
Prior art keywords
light
optical system
target surface
optical
polarizing element
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Expired - Fee Related
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KR1020050033539A
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English (en)
Korean (ko)
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KR20060047407A (ko
Inventor
켄이치로 모리
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G03F7/70966—Birefringence
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
  • Polarising Elements (AREA)
KR1020050033539A 2004-04-23 2005-04-22 조명광학계, 노광장치 및 디바이스의 제조방법 Expired - Fee Related KR100699955B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004128602A JP4776891B2 (ja) 2004-04-23 2004-04-23 照明光学系、露光装置、及びデバイス製造方法
JPJP-P-2004-00128602 2004-04-23

Publications (2)

Publication Number Publication Date
KR20060047407A KR20060047407A (ko) 2006-05-18
KR100699955B1 true KR100699955B1 (ko) 2007-03-27

Family

ID=34940974

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050033539A Expired - Fee Related KR100699955B1 (ko) 2004-04-23 2005-04-22 조명광학계, 노광장치 및 디바이스의 제조방법

Country Status (5)

Country Link
US (1) US7206060B2 (https=)
EP (2) EP1589379A3 (https=)
JP (1) JP4776891B2 (https=)
KR (1) KR100699955B1 (https=)
CN (2) CN101369103A (https=)

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EP2157480B1 (en) 2003-04-09 2015-05-27 Nikon Corporation Exposure method and apparatus, and device manufacturing method
TWI360158B (en) 2003-10-28 2012-03-11 Nikon Corp Projection exposure device,exposure method and dev
TWI385414B (zh) * 2003-11-20 2013-02-11 尼康股份有限公司 光學照明裝置、照明方法、曝光裝置、曝光方法以及元件製造方法
CN101799587B (zh) 2004-01-16 2012-05-30 卡尔蔡司Smt有限责任公司 光学系统、投影系统及微结构半导体部件的制造方法
US20070019179A1 (en) * 2004-01-16 2007-01-25 Damian Fiolka Polarization-modulating optical element
TWI395068B (zh) 2004-01-27 2013-05-01 尼康股份有限公司 光學系統、曝光裝置以及曝光方法
TWI609410B (zh) 2004-02-06 2017-12-21 尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法以及元件製造方法
JP4776891B2 (ja) 2004-04-23 2011-09-21 キヤノン株式会社 照明光学系、露光装置、及びデバイス製造方法
JP2007220767A (ja) * 2006-02-15 2007-08-30 Canon Inc 露光装置及びデバイス製造方法
JP2007258575A (ja) * 2006-03-24 2007-10-04 Canon Inc 照明装置、当該照明装置を有する露光装置及びデバイス製造方法
JP4752695B2 (ja) * 2006-09-15 2011-08-17 ソニー株式会社 マスクパターン補正方法，マスクパターン補正装置およびそのプログラム
US7817250B2 (en) * 2007-07-18 2010-10-19 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus
DE102007043958B4 (de) * 2007-09-14 2011-08-25 Carl Zeiss SMT GmbH, 73447 Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
TW200938957A (en) * 2008-03-05 2009-09-16 Nanya Technology Corp Feedback system and feedback method for controlling power ratio of light source
JP5167032B2 (ja) 2008-08-27 2013-03-21 キヤノン株式会社 計算機ホログラム、露光装置及びデバイスの製造方法
JP2009065175A (ja) * 2008-10-02 2009-03-26 Canon Inc 照明光学系
JP5688672B2 (ja) * 2009-02-17 2015-03-25 株式会社ニコン 光伝送装置、照明光学系、露光装置、およびデバイス製造方法
JP5511882B2 (ja) * 2012-04-19 2014-06-04 ギガフォトン株式会社 極端紫外光源装置
WO2018229854A1 (ja) * 2017-06-13 2018-12-20 ギガフォトン株式会社 レーザ装置及び光学素子の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004103746A (ja) 2002-09-09 2004-04-02 Nikon Corp 露光装置および露光方法

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JP2884947B2 (ja) * 1992-10-01 1999-04-19 株式会社ニコン 投影露光装置、露光方法および半導体集積回路の製造方法
JP3322274B2 (ja) * 1992-10-29 2002-09-09 株式会社ニコン 投影露光方法及び投影露光装置
JP3189993B2 (ja) 1993-10-14 2001-07-16 日本電信電話株式会社 多地点間音声通信端末
KR20010042098A (ko) * 1998-03-24 2001-05-25 오노 시게오 조명 장치, 노광 방법 및 장치와 디바이스 제조 방법
JP3985346B2 (ja) * 1998-06-12 2007-10-03 株式会社ニコン 投影露光装置、投影露光装置の調整方法、及び投影露光方法
JP4065923B2 (ja) * 1998-09-29 2008-03-26 株式会社ニコン 照明装置及び該照明装置を備えた投影露光装置、該照明装置による投影露光方法、及び該投影露光装置の調整方法
DE60042186D1 (de) * 1999-01-06 2009-06-25 Nikon Corp Onssystems
AU4143000A (en) * 1999-04-28 2000-11-17 Nikon Corporation Exposure method and apparatus
US6410192B1 (en) * 1999-11-15 2002-06-25 Corning Incorporated Photolithography method, photolithography mask blanks, and method of making
JP3639807B2 (ja) * 2001-06-27 2005-04-20 キヤノン株式会社 光学素子及び製造方法
US6994747B2 (en) * 2001-07-17 2006-02-07 Nikon Corporation Method for producing optical member
JP2003090978A (ja) * 2001-09-17 2003-03-28 Canon Inc 照明装置、露光装置及びデバイス製造方法
DE10329360B4 (de) * 2002-07-01 2008-08-28 Canon K.K. Doppelbrechungsmessgerät, Spannungsentfernungseinrichtung, Polarimeter und Belichtungsgerät
JP4095376B2 (ja) * 2002-08-28 2008-06-04 キヤノン株式会社 露光装置及び方法、並びに、デバイス製造方法
JP2004128602A (ja) 2002-09-30 2004-04-22 Canon Inc 画像編集方法、画像編集装置、プログラム及び記録媒体
US6975765B2 (en) * 2003-05-06 2005-12-13 New Light Industries, Ltd. Optically variable form birefringent structure and method and system and method for reading same
JP4776891B2 (ja) 2004-04-23 2011-09-21 キヤノン株式会社 照明光学系、露光装置、及びデバイス製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004103746A (ja) 2002-09-09 2004-04-02 Nikon Corp 露光装置および露光方法

Also Published As

Publication number Publication date
JP2005311187A (ja) 2005-11-04
CN101369103A (zh) 2009-02-18
EP2012183A8 (en) 2010-06-23
JP4776891B2 (ja) 2011-09-21
CN1690861A (zh) 2005-11-02
EP1589379A3 (en) 2008-04-09
EP1589379A2 (en) 2005-10-26
EP2012183A2 (en) 2009-01-07
KR20060047407A (ko) 2006-05-18
CN1690861B (zh) 2011-11-23
US7206060B2 (en) 2007-04-17
US20050237527A1 (en) 2005-10-27
EP2012183A3 (en) 2011-11-02

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