KR100681750B1 - 레지스트 패턴의 형성방법, 이것을 사용한 미세 패턴의형성방법 및 액정 표시소자의 제조방법 - Google Patents

레지스트 패턴의 형성방법, 이것을 사용한 미세 패턴의형성방법 및 액정 표시소자의 제조방법 Download PDF

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KR100681750B1
KR100681750B1 KR1020040102204A KR20040102204A KR100681750B1 KR 100681750 B1 KR100681750 B1 KR 100681750B1 KR 1020040102204 A KR1020040102204 A KR 1020040102204A KR 20040102204 A KR20040102204 A KR 20040102204A KR 100681750 B1 KR100681750 B1 KR 100681750B1
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KR
South Korea
Prior art keywords
resist pattern
film
forming
treatment
phase resist
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KR1020040102204A
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English (en)
Korean (ko)
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KR20050058956A (ko
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모리오기미타카
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도오꾜오까고오교 가부시끼가이샤
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Publication of KR20050058956A publication Critical patent/KR20050058956A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Thin Film Transistor (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020040102204A 2003-12-12 2004-12-07 레지스트 패턴의 형성방법, 이것을 사용한 미세 패턴의형성방법 및 액정 표시소자의 제조방법 KR100681750B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00414768 2003-12-12
JP2003414768A JP4275519B2 (ja) 2003-12-12 2003-12-12 微細パターンの形成方法および液晶表示素子の製造方法

Publications (2)

Publication Number Publication Date
KR20050058956A KR20050058956A (ko) 2005-06-17
KR100681750B1 true KR100681750B1 (ko) 2007-02-15

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KR1020040102204A KR100681750B1 (ko) 2003-12-12 2004-12-07 레지스트 패턴의 형성방법, 이것을 사용한 미세 패턴의형성방법 및 액정 표시소자의 제조방법

Country Status (4)

Country Link
JP (1) JP4275519B2 (zh)
KR (1) KR100681750B1 (zh)
CN (1) CN100340925C (zh)
TW (1) TWI307457B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101375855B1 (ko) 2008-11-27 2014-03-18 엘지디스플레이 주식회사 산화물 박막 트랜지스터의 제조방법
KR101522240B1 (ko) * 2007-12-24 2015-05-22 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4611690B2 (ja) * 2004-09-03 2011-01-12 東京応化工業株式会社 レジストパターンの形成方法ならびにこれを用いた微細パターンの形成方法および液晶表示素子の製造方法
CN104253037A (zh) * 2013-06-30 2014-12-31 无锡华润上华半导体有限公司 一种改善刻蚀糊胶的方法
CN106505033B (zh) * 2016-11-16 2019-06-25 深圳市华星光电技术有限公司 阵列基板及其制备方法、显示装置
CN107195540B (zh) * 2017-06-05 2021-01-26 京东方科技集团股份有限公司 一种阵列基板的制作方法、阵列基板及显示装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010005223A (ko) * 1999-06-30 2001-01-15 윤종용 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법 및 그 정렬 키 구조
KR20010009268A (ko) * 1999-07-08 2001-02-05 윤종용 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5545576A (en) * 1994-04-28 1996-08-13 Casio Computer Co., Ltd. Method for manufacturing a thin film transistor panel
TW449929B (en) * 2000-08-02 2001-08-11 Ind Tech Res Inst Structure and manufacturing method of amorphous-silicon thin film transistor array
TW465117B (en) * 2000-11-30 2001-11-21 Ind Tech Res Inst Manufacturing method of polysilicon thin film transistor containing lightly doped drain structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010005223A (ko) * 1999-06-30 2001-01-15 윤종용 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법 및 그 정렬 키 구조
KR20010009268A (ko) * 1999-07-08 2001-02-05 윤종용 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101522240B1 (ko) * 2007-12-24 2015-05-22 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
KR101375855B1 (ko) 2008-11-27 2014-03-18 엘지디스플레이 주식회사 산화물 박막 트랜지스터의 제조방법

Also Published As

Publication number Publication date
TW200523678A (en) 2005-07-16
JP2005173341A (ja) 2005-06-30
CN1629732A (zh) 2005-06-22
KR20050058956A (ko) 2005-06-17
TWI307457B (en) 2009-03-11
CN100340925C (zh) 2007-10-03
JP4275519B2 (ja) 2009-06-10

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