KR100659619B1 - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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Publication number
KR100659619B1
KR100659619B1 KR1020040078182A KR20040078182A KR100659619B1 KR 100659619 B1 KR100659619 B1 KR 100659619B1 KR 1020040078182 A KR1020040078182 A KR 1020040078182A KR 20040078182 A KR20040078182 A KR 20040078182A KR 100659619 B1 KR100659619 B1 KR 100659619B1
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South Korea
Prior art keywords
layer
silicide
gate electrode
diffusion layer
concentration diffusion
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Expired - Fee Related
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KR1020040078182A
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English (en)
Korean (ko)
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KR20050033018A (ko
Inventor
스기하라시게유끼
Original Assignee
산요덴키가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020040078182A 2003-10-02 2004-10-01 반도체 장치의 제조 방법 Expired - Fee Related KR100659619B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003344170A JP2005109389A (ja) 2003-10-02 2003-10-02 半導体装置及びその製造方法
JPJP-P-2003-00344170 2003-10-02

Publications (2)

Publication Number Publication Date
KR20050033018A KR20050033018A (ko) 2005-04-08
KR100659619B1 true KR100659619B1 (ko) 2006-12-20

Family

ID=34537894

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040078182A Expired - Fee Related KR100659619B1 (ko) 2003-10-02 2004-10-01 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (1) US7468303B2 (https=)
JP (1) JP2005109389A (https=)
KR (1) KR100659619B1 (https=)
CN (1) CN1604340A (https=)
TW (1) TWI260783B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100976793B1 (ko) 2007-12-31 2010-08-20 주식회사 동부하이텍 모스 트랜지스터의 제조 방법

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7615426B2 (en) * 2005-02-22 2009-11-10 Taiwan Semiconductor Manufacturing Company, Ltd. PMOS transistor with discontinuous CESL and method of fabrication
JP4850470B2 (ja) * 2005-10-04 2012-01-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR100928504B1 (ko) * 2007-10-19 2009-11-26 주식회사 동부하이텍 반도체 소자 및 반도체 소자의 제조방법
US8674454B2 (en) 2009-02-20 2014-03-18 Mediatek Inc. Lateral bipolar junction transistor
US20100213507A1 (en) * 2009-02-20 2010-08-26 Ching-Chung Ko Lateral bipolar junction transistor
US20110065245A1 (en) * 2009-09-13 2011-03-17 Jei-Ming Chen Method for fabricating mos transistor
JP2011222955A (ja) * 2010-03-26 2011-11-04 Renesas Electronics Corp 半導体装置及びその製造方法
CN102456556A (zh) * 2010-10-18 2012-05-16 中芯国际集成电路制造(上海)有限公司 金属硅化物的形成方法
US8569171B2 (en) * 2011-07-01 2013-10-29 Globalfoundries Inc. Mask-based silicidation for FEOL defectivity reduction and yield boost
JP5927017B2 (ja) * 2012-04-20 2016-05-25 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US9035380B2 (en) 2012-11-27 2015-05-19 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage drain-extended MOSFET having extra drain-OD addition
KR102288643B1 (ko) 2019-03-29 2021-08-10 매그나칩 반도체 유한회사 마스크 레이아웃 및 그 마스크 레이아웃을 이용한 반도체 소자 및 그 반도체 소자 제조방법
US20200411688A1 (en) * 2019-06-27 2020-12-31 Nanya Technology Corporation Semiconductor device with anti-hot electron effect capability

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5208472A (en) * 1988-05-13 1993-05-04 Industrial Technology Research Institute Double spacer salicide MOS device and method
US4949136A (en) * 1988-06-09 1990-08-14 University Of Connecticut Submicron lightly doped field effect transistors
JP2551127B2 (ja) * 1989-01-07 1996-11-06 三菱電機株式会社 Ｍｉｓ型半導体装置およびその製造方法
DE69526569T2 (de) * 1994-01-12 2002-12-19 Atmel Corp., San Jose Eingangs-/ausgangs-transistor mit optimierten schutz gegen esd
US6100125A (en) * 1998-09-25 2000-08-08 Fairchild Semiconductor Corp. LDD structure for ESD protection and method of fabrication
JP3594550B2 (ja) * 2000-11-27 2004-12-02 シャープ株式会社 半導体装置の製造方法
JP2002353330A (ja) 2001-05-25 2002-12-06 Denso Corp 半導体装置及びその製造方法
JP2003151991A (ja) 2001-08-23 2003-05-23 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
KR20030058437A (ko) 2001-12-31 2003-07-07 동부전자 주식회사 홈을 이용한 반도체 소자의 제조 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100976793B1 (ko) 2007-12-31 2010-08-20 주식회사 동부하이텍 모스 트랜지스터의 제조 방법

Also Published As

Publication number Publication date
KR20050033018A (ko) 2005-04-08
CN1604340A (zh) 2005-04-06
US20050104135A1 (en) 2005-05-19
TWI260783B (en) 2006-08-21
JP2005109389A (ja) 2005-04-21
TW200514259A (en) 2005-04-16
US7468303B2 (en) 2008-12-23

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