KR100641925B1 - 알루미늄 갈륨 인듐 질화물 구조 디바이스 및 그 제조 방법 - Google Patents

알루미늄 갈륨 인듐 질화물 구조 디바이스 및 그 제조 방법 Download PDF

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KR100641925B1
KR100641925B1 KR1020000005424A KR20000005424A KR100641925B1 KR 100641925 B1 KR100641925 B1 KR 100641925B1 KR 1020000005424 A KR1020000005424 A KR 1020000005424A KR 20000005424 A KR20000005424 A KR 20000005424A KR 100641925 B1 KR100641925 B1 KR 100641925B1
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substrate
layer
manufacturing
wafer
mirror stack
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KR20000076604A (ko
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코만캐리카터
컨알스코트
키쉬프레드에이2세
크라메스마이클알
너미코아토브이
송윤-규
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필립스 루미리즈 라이팅 캄파니 엘엘씨
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H10H20/8142—Bodies having reflecting means, e.g. semiconductor Bragg reflectors forming resonant cavity structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/1838—Reflector bonded by wafer fusion or by an intermediate compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/862—Resonant cavity structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
KR1020000005424A 1999-02-05 2000-02-03 알루미늄 갈륨 인듐 질화물 구조 디바이스 및 그 제조 방법 Expired - Lifetime KR100641925B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/245,435 US6320206B1 (en) 1999-02-05 1999-02-05 Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
US09/245,435 1999-02-05
US9/245,435 1999-02-05

Publications (2)

Publication Number Publication Date
KR20000076604A KR20000076604A (ko) 2000-12-26
KR100641925B1 true KR100641925B1 (ko) 2006-11-02

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KR1020000005424A Expired - Lifetime KR100641925B1 (ko) 1999-02-05 2000-02-03 알루미늄 갈륨 인듐 질화물 구조 디바이스 및 그 제조 방법

Country Status (7)

Country Link
US (2) US6320206B1 (enExample)
JP (1) JP4834210B2 (enExample)
KR (1) KR100641925B1 (enExample)
CN (1) CN1267109A (enExample)
DE (1) DE19953588C2 (enExample)
GB (1) GB2346480A (enExample)
TW (1) TW447183B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101428719B1 (ko) 2008-05-22 2014-08-12 삼성전자 주식회사 발광 소자 및 발광 장치의 제조 방법, 상기 방법을이용하여 제조한 발광 소자 및 발광 장치

Families Citing this family (203)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9807692D0 (en) * 1998-04-14 1998-06-10 Univ Strathclyde Optival devices
US20010042866A1 (en) * 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
JP2000323797A (ja) * 1999-05-10 2000-11-24 Pioneer Electronic Corp 窒化物半導体レーザ及びその製造方法
DE10051465A1 (de) * 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
EP1277240B1 (de) * 2000-04-26 2015-05-20 OSRAM Opto Semiconductors GmbH Verfahren zur Herstellung eines lichtmittierenden Halbleiterbauelements
US7319247B2 (en) * 2000-04-26 2008-01-15 Osram Gmbh Light emitting-diode chip and a method for producing same
TWI289944B (en) * 2000-05-26 2007-11-11 Osram Opto Semiconductors Gmbh Light-emitting-diode-element with a light-emitting-diode-chip
US6643304B1 (en) * 2000-07-26 2003-11-04 Axt, Inc. Transparent substrate light emitting diode
US6628685B1 (en) * 2000-08-21 2003-09-30 Chan-Long Shieh Method of fabricating long-wavelength VCSEL and apparatus
US6625367B2 (en) * 2000-08-21 2003-09-23 Triquint Technology Holding Co. Optoelectronic device having a P-contact and an N-contact located over a same side of a substrate and a method of manufacture therefor
KR100754156B1 (ko) * 2000-08-23 2007-09-03 삼성전자주식회사 다중 파장 표면광 레이저 및 그 제조방법
US6562648B1 (en) * 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
US6998281B2 (en) * 2000-10-12 2006-02-14 General Electric Company Solid state lighting device with reduced form factor including LED with directional emission and package with microoptics
US6525335B1 (en) * 2000-11-06 2003-02-25 Lumileds Lighting, U.S., Llc Light emitting semiconductor devices including wafer bonded heterostructures
JP3729065B2 (ja) * 2000-12-05 2005-12-21 日立電線株式会社 窒化物半導体エピタキシャルウェハの製造方法及び窒化物半導体エピタキシャルウェハ
FR2818263B1 (fr) * 2000-12-14 2004-02-20 Commissariat Energie Atomique Substrat pour materiau a insoler
US6791119B2 (en) 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6794684B2 (en) 2001-02-01 2004-09-21 Cree, Inc. Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same
JP4853677B2 (ja) * 2001-03-09 2012-01-11 セイコーエプソン株式会社 発光装置、表示装置ならびに電子機器
JP4131114B2 (ja) * 2001-03-09 2008-08-13 セイコーエプソン株式会社 発光装置、表示装置ならびに電子機器
US7211833B2 (en) 2001-07-23 2007-05-01 Cree, Inc. Light emitting diodes including barrier layers/sublayers
US6740906B2 (en) 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
TW523939B (en) * 2001-11-07 2003-03-11 Nat Univ Chung Hsing High-efficient light emitting diode and its manufacturing method
US6656761B2 (en) * 2001-11-21 2003-12-02 Motorola, Inc. Method for forming a semiconductor device for detecting light
US6455340B1 (en) * 2001-12-21 2002-09-24 Xerox Corporation Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff
US6635503B2 (en) 2002-01-28 2003-10-21 Cree, Inc. Cluster packaging of light emitting diodes
TWI226139B (en) * 2002-01-31 2005-01-01 Osram Opto Semiconductors Gmbh Method to manufacture a semiconductor-component
US6658041B2 (en) 2002-03-20 2003-12-02 Agilent Technologies, Inc. Wafer bonded vertical cavity surface emitting laser systems
US20030189215A1 (en) 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
ES2378067T3 (es) * 2002-05-08 2012-04-04 Phoseon Technology, Inc. Fuente de luz de estado sólido de alta eficacia y métodos de uso y fabricación
JP3846367B2 (ja) * 2002-05-30 2006-11-15 セイコーエプソン株式会社 半導体素子部材及び半導体装置並びにそれらの製造方法、電気光学装置、電子機器
US6967981B2 (en) * 2002-05-30 2005-11-22 Xerox Corporation Nitride based semiconductor structures with highly reflective mirrors
US20040140474A1 (en) * 2002-06-25 2004-07-22 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device, method for fabricating the same and method for bonding the same
US6841802B2 (en) 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
AU2003256382A1 (en) * 2002-07-06 2004-01-23 Optical Communication Products, Inc. Method of self-aligning an oxide aperture with an annular intra-cavity contact in a long wavelength vcsel
US7928455B2 (en) * 2002-07-15 2011-04-19 Epistar Corporation Semiconductor light-emitting device and method for forming the same
TW567618B (en) * 2002-07-15 2003-12-21 Epistar Corp Light emitting diode with adhesive reflection layer and manufacturing method thereof
DE10253908B4 (de) * 2002-09-24 2010-04-22 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
US6936486B2 (en) * 2002-11-19 2005-08-30 Jdsu Uniphase Corporation Low voltage multi-junction vertical cavity surface emitting laser
WO2004047242A1 (en) * 2002-11-19 2004-06-03 Julian Cheng Low voltage multi-junction vertical cavity surface emitting laser
JP3795007B2 (ja) 2002-11-27 2006-07-12 松下電器産業株式会社 半導体発光素子及びその製造方法
TW571449B (en) * 2002-12-23 2004-01-11 Epistar Corp Light-emitting device having micro-reflective structure
WO2004068572A2 (de) 2003-01-31 2004-08-12 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines halbleiterbauelements
US20040161006A1 (en) * 2003-02-18 2004-08-19 Ying-Lan Chang Method and apparatus for improving wavelength stability for InGaAsN devices
KR100678407B1 (ko) * 2003-03-18 2007-02-02 크리스탈 포토닉스, 인코포레이티드 Ⅲ족 질화물 장치를 제조하는 방법과 이 방법으로 제조된장치
US20040259279A1 (en) 2003-04-15 2004-12-23 Erchak Alexei A. Light emitting device methods
US6884645B2 (en) * 2003-04-18 2005-04-26 Raytheon Company Method for preparing a device structure having a wafer structure deposited on a composite substrate having a matched coefficient of thermal expansion
JP2004327581A (ja) * 2003-04-23 2004-11-18 Mitsubishi Electric Corp 半導体レーザ装置
EP1620903B1 (en) * 2003-04-30 2017-08-16 Cree, Inc. High-power solid state light emitter package
CN100573932C (zh) * 2003-05-16 2009-12-23 晶元光电股份有限公司 具有粘结层的发光二极管及其制造方法
JP4130158B2 (ja) * 2003-06-09 2008-08-06 三洋電機株式会社 半導体装置の製造方法、半導体装置
US8999736B2 (en) * 2003-07-04 2015-04-07 Epistar Corporation Optoelectronic system
US7008858B2 (en) * 2003-07-04 2006-03-07 Epistar Corporation Light emitting diode having an adhesive layer and a reflective layer and manufacturing method thereof
US7456035B2 (en) * 2003-07-29 2008-11-25 Lumination Llc Flip chip light emitting diode devices having thinned or removed substrates
US7119372B2 (en) * 2003-10-24 2006-10-10 Gelcore, Llc Flip-chip light emitting diode
US7009215B2 (en) * 2003-10-24 2006-03-07 General Electric Company Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
WO2005043954A2 (en) * 2003-10-31 2005-05-12 Phoseon Technology, Inc. Series wiring of highly reliable light sources
EP1678442B8 (en) * 2003-10-31 2013-06-26 Phoseon Technology, Inc. Led light module and manufacturing method
US7151284B2 (en) * 2003-11-10 2006-12-19 Shangjr Gwo Structures for light emitting devices with integrated multilayer mirrors
WO2005062905A2 (en) * 2003-12-24 2005-07-14 Gelcore Llc Laser lift-off of sapphire from a nitride flip-chip
EP1569263B1 (de) * 2004-02-27 2011-11-23 OSRAM Opto Semiconductors GmbH Verfahren zum Verbinden zweier Wafer
WO2005089477A2 (en) * 2004-03-18 2005-09-29 Phoseon Technology, Inc. Direct cooling of leds
TWI312583B (en) * 2004-03-18 2009-07-21 Phoseon Technology Inc Micro-reflectors on a substrate for high-density led array
US7808011B2 (en) * 2004-03-19 2010-10-05 Koninklijke Philips Electronics N.V. Semiconductor light emitting devices including in-plane light emitting layers
US7816638B2 (en) * 2004-03-30 2010-10-19 Phoseon Technology, Inc. LED array having array-based LED detectors
US7285801B2 (en) * 2004-04-02 2007-10-23 Lumination, Llc LED with series-connected monolithically integrated mesas
DK1756876T3 (da) * 2004-04-12 2011-07-18 Phoseon Technology Inc LED-opstilling med høj densitet
EP1738156A4 (en) * 2004-04-19 2017-09-27 Phoseon Technology, Inc. Imaging semiconductor strucutures using solid state illumination
US7825006B2 (en) * 2004-05-06 2010-11-02 Cree, Inc. Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method
US7332365B2 (en) * 2004-05-18 2008-02-19 Cree, Inc. Method for fabricating group-III nitride devices and devices fabricated using method
US7791061B2 (en) * 2004-05-18 2010-09-07 Cree, Inc. External extraction light emitting diode based upon crystallographic faceted surfaces
US7196835B2 (en) * 2004-06-01 2007-03-27 The Trustees Of Princeton University Aperiodic dielectric multilayer stack
US6956246B1 (en) * 2004-06-03 2005-10-18 Lumileds Lighting U.S., Llc Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal
US7148075B2 (en) * 2004-06-05 2006-12-12 Hui Peng Vertical semiconductor devices or chips and method of mass production of the same
US20050274970A1 (en) * 2004-06-14 2005-12-15 Lumileds Lighting U.S., Llc Light emitting device with transparent substrate having backside vias
CN101032034A (zh) * 2004-06-30 2007-09-05 克里公司 用于封装发光器件的芯片级方法和芯片级封装的发光器件
US7534633B2 (en) * 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
JP5303696B2 (ja) * 2004-07-06 2013-10-02 独立行政法人科学技術振興機構 オプトエレクトロニクス応用のための（Ａｌ、Ｉｎ、Ｇａ）ＮおよびＺｎ（Ｓ、Ｓｅ）のウェハボンディング方法
TWI266435B (en) * 2004-07-08 2006-11-11 Sharp Kk Nitride-based compound semiconductor light emitting device and fabricating method thereof
US20060054919A1 (en) * 2004-08-27 2006-03-16 Kyocera Corporation Light-emitting element, method for manufacturing the same and lighting equipment using the same
JP2006073619A (ja) * 2004-08-31 2006-03-16 Sharp Corp 窒化物系化合物半導体発光素子
JP4371956B2 (ja) * 2004-09-02 2009-11-25 シャープ株式会社 窒化物系化合物半導体発光素子およびその製造方法
US7737459B2 (en) * 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
US8174037B2 (en) * 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US7259402B2 (en) * 2004-09-22 2007-08-21 Cree, Inc. High efficiency group III nitride-silicon carbide light emitting diode
US8513686B2 (en) * 2004-09-22 2013-08-20 Cree, Inc. High output small area group III nitride LEDs
US20060081858A1 (en) * 2004-10-14 2006-04-20 Chung-Hsiang Lin Light emitting device with omnidirectional reflectors
US7256483B2 (en) * 2004-10-28 2007-08-14 Philips Lumileds Lighting Company, Llc Package-integrated thin film LED
US9281001B2 (en) * 2004-11-08 2016-03-08 Phoseon Technology, Inc. Methods and systems relating to light sources for use in industrial processes
DE102004057802B4 (de) * 2004-11-30 2011-03-24 Osram Opto Semiconductors Gmbh Strahlungemittierendes Halbleiterbauelement mit Zwischenschicht
US8288942B2 (en) * 2004-12-28 2012-10-16 Cree, Inc. High efficacy white LED
TWI352437B (en) * 2007-08-27 2011-11-11 Epistar Corp Optoelectronic semiconductor device
US7932111B2 (en) * 2005-02-23 2011-04-26 Cree, Inc. Substrate removal process for high light extraction LEDs
US7125734B2 (en) * 2005-03-09 2006-10-24 Gelcore, Llc Increased light extraction from a nitride LED
US7804100B2 (en) * 2005-03-14 2010-09-28 Philips Lumileds Lighting Company, Llc Polarization-reversed III-nitride light emitting device
US8748923B2 (en) * 2005-03-14 2014-06-10 Philips Lumileds Lighting Company Llc Wavelength-converted semiconductor light emitting device
US7341878B2 (en) * 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
JP4767035B2 (ja) * 2005-04-12 2011-09-07 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
TWI422044B (zh) * 2005-06-30 2014-01-01 克立公司 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置
EP1739213B1 (de) * 2005-07-01 2011-04-13 Freiberger Compound Materials GmbH Vorrichtung und Verfahren zum Tempern von III-V-Wafern sowie getemperte III-V-Halbleitereinkristallwafer
US7384808B2 (en) * 2005-07-12 2008-06-10 Visual Photonics Epitaxy Co., Ltd. Fabrication method of high-brightness light emitting diode having reflective layer
US8674375B2 (en) * 2005-07-21 2014-03-18 Cree, Inc. Roughened high refractive index layer/LED for high light extraction
US7638810B2 (en) * 2005-09-09 2009-12-29 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. GaN laser with refractory metal ELOG masks for intracavity contact
CN101882657A (zh) * 2005-10-29 2010-11-10 三星电子株式会社 半导体器件及其制造方法
CN100418241C (zh) * 2005-12-10 2008-09-10 金芃 垂直结构的半导体芯片或器件的批量生产方法
US7642527B2 (en) * 2005-12-30 2010-01-05 Phoseon Technology, Inc. Multi-attribute light effects for use in curing and other applications involving photoreactions and processing
TWI491062B (zh) * 2006-01-20 2015-07-01 克里公司 空間分離發光膜以偏移固態發光器的光譜內容
US8441179B2 (en) 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
DE102006061167A1 (de) * 2006-04-25 2007-12-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
CN100377456C (zh) * 2006-05-17 2008-03-26 中微光电子(潍坊)有限公司 垂直腔面发射半导体激光二极管的外延结构
EP2033235B1 (en) 2006-05-26 2017-06-21 Cree, Inc. Solid state light emitting device
WO2007142946A2 (en) 2006-05-31 2007-12-13 Cree Led Lighting Solutions, Inc. Lighting device and method of lighting
US7910945B2 (en) * 2006-06-30 2011-03-22 Cree, Inc. Nickel tin bonding system with barrier layer for semiconductor wafers and devices
US8698184B2 (en) 2011-01-21 2014-04-15 Cree, Inc. Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature
US8643195B2 (en) * 2006-06-30 2014-02-04 Cree, Inc. Nickel tin bonding system for semiconductor wafers and devices
US7915624B2 (en) 2006-08-06 2011-03-29 Lightwave Photonics, Inc. III-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods
JP2010502014A (ja) * 2006-08-23 2010-01-21 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド 照明装置、および照明方法
JP2008091862A (ja) * 2006-09-08 2008-04-17 Sharp Corp 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
US20100224890A1 (en) * 2006-09-18 2010-09-09 Cree, Inc. Light emitting diode chip with electrical insulation element
JP4172515B2 (ja) * 2006-10-18 2008-10-29 ソニー株式会社 発光素子の製造方法
US7847306B2 (en) * 2006-10-23 2010-12-07 Hong Kong Applied Science and Technology Research Insitute Company, Ltd. Light emitting diode device, method of fabrication and use thereof
JP5171016B2 (ja) * 2006-10-27 2013-03-27 キヤノン株式会社 半導体部材、半導体物品の製造方法、その製造方法を用いたｌｅｄアレイ
US20080101062A1 (en) * 2006-10-27 2008-05-01 Hong Kong Applied Science and Technology Research Institute Company Limited Lighting device for projecting a beam of light
JP2008117824A (ja) * 2006-11-01 2008-05-22 Sharp Corp 窒化物系半導体素子の製造方法
US8337045B2 (en) * 2006-12-04 2012-12-25 Cree, Inc. Lighting device and lighting method
WO2008070607A1 (en) 2006-12-04 2008-06-12 Cree Led Lighting Solutions, Inc. Lighting assembly and lighting method
JP2010517273A (ja) 2007-01-22 2010-05-20 クリー レッド ライティング ソリューションズ、インコーポレイテッド フォールト・トレラント発光体、フォールト・トレラント発光体を含むシステムおよびフォールト・トレラント発光体を作製する方法
CN101601135B (zh) 2007-01-22 2012-06-27 科锐公司 使用发光器件外部互连阵列的照明装置以及其制造方法
CN101790794A (zh) 2007-07-03 2010-07-28 微连器件公司 制造薄膜ⅲ-ⅴ族化合物太阳能电池的方法
WO2009012287A1 (en) 2007-07-17 2009-01-22 Cree Led Lighting Solutions, Inc. Optical elements with internal optical features and methods of fabricating same
US7863635B2 (en) 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
US8617997B2 (en) * 2007-08-21 2013-12-31 Cree, Inc. Selective wet etching of gold-tin based solder
US11114594B2 (en) 2007-08-24 2021-09-07 Creeled, Inc. Light emitting device packages using light scattering particles of different size
CN101836297A (zh) * 2007-10-26 2010-09-15 科锐Led照明科技公司 具有一个或多个发光荧光体的照明装置及其制造方法
KR101449005B1 (ko) * 2007-11-26 2014-10-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
KR20090072980A (ko) * 2007-12-28 2009-07-02 서울옵토디바이스주식회사 발광 다이오드 및 그 제조방법
DE102008006988A1 (de) 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
EP2257983A4 (en) 2008-02-25 2013-07-31 Lightwave Photonics Inc CURRENT INJECTING BZW. TUNNELIGHT EMITTING DEVICE AND METHOD
DE102008019268A1 (de) 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
TWI495141B (zh) * 2008-08-01 2015-08-01 Epistar Corp 晶圓發光結構之形成方法及光源產生裝置
US7919780B2 (en) * 2008-08-05 2011-04-05 Dicon Fiberoptics, Inc. System for high efficiency solid-state light emissions and method of manufacture
JP5521478B2 (ja) * 2008-10-22 2014-06-11 日亜化学工業株式会社 窒化物半導体発光素子の製造方法及び窒化物半導体発光素子
JP5152520B2 (ja) * 2009-01-28 2013-02-27 国立大学法人北海道大学 半導体発光素子
US8921876B2 (en) 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
EP2330697A1 (en) * 2009-12-07 2011-06-08 S.O.I.Tec Silicon on Insulator Technologies Semiconductor device having an InGaN layer
EP2529394A4 (en) 2010-01-27 2017-11-15 Yale University Conductivity based selective etch for gan devices and applications thereof
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
EP2369696A1 (en) * 2010-03-23 2011-09-28 ETH Zurich Surface-Emitting semiconductor laser and method of manufacture thereof
US8329482B2 (en) 2010-04-30 2012-12-11 Cree, Inc. White-emitting LED chips and method for making same
KR101230619B1 (ko) 2010-05-18 2013-02-06 서울반도체 주식회사 파장변환층을 갖는 발광 다이오드 칩, 그것을 제조하는 방법 및 그것을 갖는 패키지
CN103003966B (zh) * 2010-05-18 2016-08-10 首尔半导体株式会社 具有波长变换层的发光二级管芯片及其制造方法，以及包括其的封装件及其制造方法
WO2011145794A1 (ko) 2010-05-18 2011-11-24 서울반도체 주식회사 파장변환층을 갖는 발광 다이오드 칩과 그 제조 방법, 및 그것을 포함하는 패키지 및 그 제조 방법
CN103098237A (zh) 2010-06-18 2013-05-08 Glo公司 纳米线发光二极管结构及其制造方法
CN102386200B (zh) 2010-08-27 2014-12-31 财团法人工业技术研究院 发光单元阵列与投影系统
KR101769075B1 (ko) * 2010-12-24 2017-08-18 서울바이오시스 주식회사 발광 다이오드 칩 및 그것을 제조하는 방법
CN102593291B (zh) * 2011-01-07 2014-12-03 山东华光光电子有限公司 一种氮化物分布式布拉格反射镜及制备方法与应用
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting
US8350251B1 (en) 2011-09-26 2013-01-08 Glo Ab Nanowire sized opto-electronic structure and method for manufacturing the same
CN103117349A (zh) * 2011-11-17 2013-05-22 大连美明外延片科技有限公司 一种高亮度AlGaInP发光二极管及其制造方法
KR101272833B1 (ko) * 2012-02-03 2013-06-11 광주과학기술원 실리콘 ｄｂｒ 구조가 집적된 광 소자 및 그 제조방법
US9608145B2 (en) 2012-03-14 2017-03-28 Robbie J. Jorgenson Materials, structures, and methods for optical and electrical III-nitride semiconductor devices
US9583353B2 (en) * 2012-06-28 2017-02-28 Yale University Lateral electrochemical etching of III-nitride materials for microfabrication
US8735219B2 (en) 2012-08-30 2014-05-27 Ziptronix, Inc. Heterogeneous annealing method and device
CN102820398B (zh) * 2012-08-31 2015-05-27 厦门大学 分布式布拉格反射与小面积金属接触复合三维电极
US9052535B1 (en) * 2012-12-14 2015-06-09 Sandia Corporation Electro-refractive photonic device
CN103227265B (zh) * 2013-04-12 2015-08-19 厦门大学 一种氮化镓基垂直腔面发射激光器的制作方法
US8896008B2 (en) 2013-04-23 2014-11-25 Cree, Inc. Light emitting diodes having group III nitride surface features defined by a mask and crystal planes
DE102013105035A1 (de) * 2013-05-16 2014-11-20 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchips
US11095096B2 (en) 2014-04-16 2021-08-17 Yale University Method for a GaN vertical microcavity surface emitting laser (VCSEL)
WO2015194243A1 (ja) * 2014-06-17 2015-12-23 ソニー株式会社 発光素子及びその製造方法
KR102425935B1 (ko) 2014-09-30 2022-07-27 예일 유니버시티 GaN 수직 마이크로캐비티 표면 방출 레이저(VCSEL)를 위한 방법
US11018231B2 (en) 2014-12-01 2021-05-25 Yale University Method to make buried, highly conductive p-type III-nitride layers
EP3298624B1 (en) 2015-05-19 2023-04-19 Yale University A method and device concerning iii-nitride edge emitting laser diode of high confinement factor with lattice matched cladding layer
DE102015108876B3 (de) * 2015-06-04 2016-03-03 Otto-Von-Guericke-Universität Magdeburg, Ttz Patentwesen Lichtemittierendes Gruppe-III-Nitrid basiertes Bauelement
CN105206716B (zh) * 2015-09-18 2019-02-05 华灿光电(苏州）有限公司 一种垂直结构发光二极管的制作方法
US10263144B2 (en) 2015-10-16 2019-04-16 Robbie J. Jorgenson System and method for light-emitting devices on lattice-matched metal substrates
JP6575299B2 (ja) * 2015-10-27 2019-09-18 セイコーエプソン株式会社 原子発振器
US10644114B1 (en) * 2015-11-18 2020-05-05 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Reticulated shallow etch mesa isolation
CN105609602B (zh) * 2015-12-29 2017-10-31 中国科学院半导体研究所 可见光通信用倒装rcled及其制备方法
EP3219832B1 (en) * 2016-03-16 2020-06-24 Thorlabs Inc. Method for manufacturing direct-bonded optical coatings
KR102383837B1 (ko) 2016-05-26 2022-04-07 로비 조젠슨 3a족 질화물 성장 시스템 및 방법
US10297699B2 (en) 2016-05-27 2019-05-21 The United States Of America, As Represented By The Secretary Of The Navy In-plane resonant-cavity infrared photodetectors with fully-depleted absorbers
WO2017205707A1 (en) * 2016-05-27 2017-11-30 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Resonant-cavity infrared photodetectors with fully-depleted absorbers
DE102016113002B4 (de) 2016-07-14 2022-09-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelemente mit verbesserter Effizienz und Verfahren zur Herstellung von Bauelementen
DE102017122325A1 (de) 2017-09-26 2019-03-28 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung von strahlungsemittierenden Halbleiterbauelementen
US20190237629A1 (en) 2018-01-26 2019-08-01 Lumileds Llc Optically transparent adhesion layer to connect noble metals to oxides
CN108550666A (zh) * 2018-05-02 2018-09-18 天津三安光电有限公司 倒装四元系发光二极管外延结构、倒装四元系发光二极管及其生长方法
US11664357B2 (en) 2018-07-03 2023-05-30 Adeia Semiconductor Bonding Technologies Inc. Techniques for joining dissimilar materials in microelectronics
CN110768106B (zh) * 2018-07-26 2021-01-26 山东华光光电子股份有限公司 一种激光二极管制备方法
US11365492B2 (en) 2018-09-11 2022-06-21 Thorlabs, Inc. Substrate-transferred stacked optical coatings
US12352987B2 (en) 2018-09-11 2025-07-08 Thorlabs, Inc. Substrate-transferred stacked optical coatings
JP7237536B2 (ja) * 2018-11-12 2023-03-13 株式会社ジャパンディスプレイ 表示装置
CN109830596A (zh) * 2018-12-14 2019-05-31 苏州矩阵光电有限公司 一种半导体器件及其制备方法
WO2021150953A1 (en) 2020-01-25 2021-07-29 Jade Bird Display (shanghai) Limited Micro light emitting diode with high light extraction efficiency
WO2021188846A1 (en) 2020-03-19 2021-09-23 Invensas Bonding Technologies, Inc. Dimension compensation control for directly bonded structures
CN112436380B (zh) * 2020-11-19 2022-02-18 清华大学 基于范德华外延的垂直腔面发射激光器及其制作方法
CN116420236B (zh) * 2020-11-27 2025-07-22 苏州晶湛半导体有限公司 半导体发光器件及其制备方法
CN112670391A (zh) * 2020-12-31 2021-04-16 深圳第三代半导体研究院 一种发光二极管及其制造方法
TWI781742B (zh) 2021-08-26 2022-10-21 隆達電子股份有限公司 發光二極體
CN115085006B (zh) * 2022-08-22 2023-02-28 福建慧芯激光科技有限公司 一种两端带有组合反射镜的长波长vcsel及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06342958A (ja) * 1993-06-02 1994-12-13 Nippon Telegr & Teleph Corp <Ntt> 面発光半導体レーザ
JPH09237936A (ja) * 1995-12-26 1997-09-09 Nippon Telegr & Teleph Corp <Ntt> 面発光半導体レーザおよびその製造方法
US5724376A (en) * 1995-11-30 1998-03-03 Hewlett-Packard Company Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding
JPH1126870A (ja) * 1997-07-08 1999-01-29 Nec Corp 面発光レーザの製造方法及び該方法により製造された面発光レーザ

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5217564A (en) 1980-04-10 1993-06-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5376580A (en) 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
JP3194822B2 (ja) * 1993-09-14 2001-08-06 松下電器産業株式会社 複合基板材料の製造方法
US5846844A (en) 1993-11-29 1998-12-08 Toyoda Gosei Co., Ltd. Method for producing group III nitride compound semiconductor substrates using ZnO release layers
JPH07202265A (ja) 1993-12-27 1995-08-04 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体の製造方法
US5679152A (en) 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
JP3974667B2 (ja) * 1994-08-22 2007-09-12 ローム株式会社 半導体発光素子の製法
IT1268123B1 (it) * 1994-10-13 1997-02-20 Sgs Thomson Microelectronics Fetta di materiale semiconduttore per la fabbricazione di dispositivi integrati e procedimento per la sua fabbricazione.
US5804834A (en) 1994-10-28 1998-09-08 Mitsubishi Chemical Corporation Semiconductor device having contact resistance reducing layer
US5641381A (en) 1995-03-27 1997-06-24 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Preferentially etched epitaxial liftoff of InP material
JP3409958B2 (ja) * 1995-12-15 2003-05-26 株式会社東芝 半導体発光素子
EP0784363B1 (en) * 1995-12-26 2000-10-11 Nippon Telegraph and Telephone Corporation Vertical-cavity surface-emitting laser and method for manufacturing the same
FR2753577B1 (fr) * 1996-09-13 1999-01-08 Alsthom Cge Alcatel Procede de fabrication d'un composant optoelectronique a semiconducteur et composant et matrice de composants fabriques selon ce procede
US5835521A (en) 1997-02-10 1998-11-10 Motorola, Inc. Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication
JPH10233558A (ja) * 1997-02-19 1998-09-02 Canon Inc ダイヤモンド層を含む多層膜構造、それを有する光デバイス、およびその作製方法
JP3220977B2 (ja) * 1997-05-07 2001-10-22 日亜化学工業株式会社 窒化物半導体レーザ素子及び窒化物半導体レーザ素子の製造方法。
JPH11154774A (ja) 1997-08-05 1999-06-08 Canon Inc 面発光半導体デバイスの製造方法、この方法によって製造された面発光半導体デバイス及びこのデバイスを用いた表示装置
GB2333895B (en) 1998-01-31 2003-02-26 Mitel Semiconductor Ab Pre-fusion oxidized and wafer-bonded vertical cavity laser
US6046465A (en) * 1998-04-17 2000-04-04 Hewlett-Packard Company Buried reflectors for light emitters in epitaxial material and method for producing same
US6133589A (en) * 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06342958A (ja) * 1993-06-02 1994-12-13 Nippon Telegr & Teleph Corp <Ntt> 面発光半導体レーザ
US5724376A (en) * 1995-11-30 1998-03-03 Hewlett-Packard Company Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding
JPH09237936A (ja) * 1995-12-26 1997-09-09 Nippon Telegr & Teleph Corp <Ntt> 面発光半導体レーザおよびその製造方法
JPH1126870A (ja) * 1997-07-08 1999-01-29 Nec Corp 面発光レーザの製造方法及び該方法により製造された面発光レーザ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101428719B1 (ko) 2008-05-22 2014-08-12 삼성전자 주식회사 발광 소자 및 발광 장치의 제조 방법, 상기 방법을이용하여 제조한 발광 소자 및 발광 장치

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CN1267109A (zh) 2000-09-20
GB0002759D0 (en) 2000-03-29
US6320206B1 (en) 2001-11-20
JP4834210B2 (ja) 2011-12-14
DE19953588C2 (de) 2003-08-14
KR20000076604A (ko) 2000-12-26
GB2346480A (en) 2000-08-09
JP2000228563A (ja) 2000-08-15
US20020030198A1 (en) 2002-03-14
TW447183B (en) 2001-07-21
DE19953588A1 (de) 2000-08-17

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