KR100613672B1 - 원자외선 포토레지스트용 반사 방지 조성물 - Google Patents

원자외선 포토레지스트용 반사 방지 조성물 Download PDF

Info

Publication number
KR100613672B1
KR100613672B1 KR1020017006176A KR20017006176A KR100613672B1 KR 100613672 B1 KR100613672 B1 KR 100613672B1 KR 1020017006176 A KR1020017006176 A KR 1020017006176A KR 20017006176 A KR20017006176 A KR 20017006176A KR 100613672 B1 KR100613672 B1 KR 100613672B1
Authority
KR
South Korea
Prior art keywords
photoresist
composition
antireflective coating
alkyl
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020017006176A
Other languages
English (en)
Korean (ko)
Other versions
KR20010089464A (ko
Inventor
파드마나반무니라쓰나
댐멜랄프알
피크너스탠리에이
오버랜더조셉이
세이건존피
Original Assignee
에이제토 엘렉토로닉 마티리알즈 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 filed Critical 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤
Publication of KR20010089464A publication Critical patent/KR20010089464A/ko
Application granted granted Critical
Publication of KR100613672B1 publication Critical patent/KR100613672B1/ko
Assigned to 에이제토 엘렉토로닉 마티리알즈 아이피 (재팬) 가부시키가이샤 reassignment 에이제토 엘렉토로닉 마티리알즈 아이피 (재팬) 가부시키가이샤 권리의 전부이전등록 Assignors: 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤
Assigned to 메르크 파텐트 게엠베하 reassignment 메르크 파텐트 게엠베하 권리의 전부이전등록 Assignors: 에이제토 엘렉토로닉 마티리알즈 아이피 (재팬) 가부시키가이샤
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D231/00—Heterocyclic compounds containing 1,2-diazole or hydrogenated 1,2-diazole rings
    • C07D231/02—Heterocyclic compounds containing 1,2-diazole or hydrogenated 1,2-diazole rings not condensed with other rings
    • C07D231/10—Heterocyclic compounds containing 1,2-diazole or hydrogenated 1,2-diazole rings not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members
    • C07D231/14—Heterocyclic compounds containing 1,2-diazole or hydrogenated 1,2-diazole rings not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D401/00—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom
    • C07D401/14—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing three or more hetero rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L81/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing sulfur with or without nitrogen, oxygen or carbon only; Compositions of polysulfones; Compositions of derivatives of such polymers
    • C08L81/06—Polysulfones; Polyethersulfones
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/76—Photosensitive materials characterised by the base or auxiliary layers
    • G03C1/825—Photosensitive materials characterised by the base or auxiliary layers characterised by antireflection means or visible-light filtering means, e.g. antihalation
    • G03C1/835—Macromolecular substances therefor, e.g. mordants
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Paints Or Removers (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
KR1020017006176A 1998-11-18 1999-11-09 원자외선 포토레지스트용 반사 방지 조성물 Expired - Lifetime KR100613672B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/195,057 1998-11-18
US09/195,057 US6114085A (en) 1998-11-18 1998-11-18 Antireflective composition for a deep ultraviolet photoresist

Publications (2)

Publication Number Publication Date
KR20010089464A KR20010089464A (ko) 2001-10-06
KR100613672B1 true KR100613672B1 (ko) 2006-08-21

Family

ID=22719888

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017006176A Expired - Lifetime KR100613672B1 (ko) 1998-11-18 1999-11-09 원자외선 포토레지스트용 반사 방지 조성물

Country Status (11)

Country Link
US (1) US6114085A (https=)
EP (1) EP1131678B1 (https=)
JP (1) JP4452408B2 (https=)
KR (1) KR100613672B1 (https=)
CN (1) CN1215381C (https=)
AT (1) ATE436042T1 (https=)
DE (1) DE69941091D1 (https=)
HK (1) HK1043630A1 (https=)
MY (1) MY117076A (https=)
TW (1) TWI223128B (https=)
WO (1) WO2000029906A2 (https=)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6258732B1 (en) * 1999-02-04 2001-07-10 International Business Machines Corporation Method of forming a patterned organic dielectric layer on a substrate
US6316165B1 (en) * 1999-03-08 2001-11-13 Shipley Company, L.L.C. Planarizing antireflective coating compositions
US6323287B1 (en) * 1999-03-12 2001-11-27 Arch Specialty Chemicals, Inc. Hydroxy-amino thermally cured undercoat for 193 NM lithography
US6924339B2 (en) * 1999-03-12 2005-08-02 Arch Specialty Chemicals, Inc. Thermally cured underlayer for lithographic application
US6610808B2 (en) 1999-03-12 2003-08-26 Arch Specialty Chemicals, Inc. Thermally cured underlayer for lithographic application
US6492092B1 (en) * 1999-03-12 2002-12-10 Arch Specialty Chemicals, Inc. Hydroxy-epoxide thermally cured undercoat for 193 NM lithography
DE50015750D1 (de) * 1999-04-28 2009-11-12 Qimonda Ag Bottomresist
US6797451B2 (en) * 1999-07-30 2004-09-28 Hynix Semiconductor Inc. Reflection-inhibiting resin used in process for forming photoresist pattern
US6686124B1 (en) * 2000-03-14 2004-02-03 International Business Machines Corporation Multifunctional polymeric materials and use thereof
US6420088B1 (en) * 2000-06-23 2002-07-16 International Business Machines Corporation Antireflective silicon-containing compositions as hardmask layer
EP1172695A1 (en) * 2000-07-14 2002-01-16 Shipley Company LLC Barrier layer
JP3509760B2 (ja) * 2001-02-08 2004-03-22 株式会社半導体先端テクノロジーズ 半導体装置の製造方法
TW594416B (en) * 2001-05-08 2004-06-21 Shipley Co Llc Photoimageable composition
KR100520163B1 (ko) * 2001-06-21 2005-10-10 주식회사 하이닉스반도체 니트로기를 포함하는 신규의 포토레지스트 중합체 및 이를함유하는 포토레지스트 조성물
JP3445584B2 (ja) * 2001-08-10 2003-09-08 沖電気工業株式会社 反射防止膜のエッチング方法
US20030215736A1 (en) * 2002-01-09 2003-11-20 Oberlander Joseph E. Negative-working photoimageable bottom antireflective coating
US7070914B2 (en) * 2002-01-09 2006-07-04 Az Electronic Materials Usa Corp. Process for producing an image using a first minimum bottom antireflective coating composition
US6844131B2 (en) 2002-01-09 2005-01-18 Clariant Finance (Bvi) Limited Positive-working photoimageable bottom antireflective coating
JP3816006B2 (ja) * 2002-01-16 2006-08-30 松下電器産業株式会社 パターン形成方法
EP1554033A4 (en) * 2002-02-06 2007-12-05 Fujifilm Electronic Materials IMPROVED COMPOSITIONS FOR REMOVING BORED BEADS OF SEMICONDUCTOR LOADING BUFFER COATINGS AND METHOD FOR THEIR USE
US6894104B2 (en) 2002-05-23 2005-05-17 Brewer Science Inc. Anti-reflective coatings and dual damascene fill compositions comprising styrene-allyl alcohol copolymers
KR100636663B1 (ko) * 2002-06-24 2006-10-23 주식회사 하이닉스반도체 유기 반사방지막 조성물 및 이를 이용한 포토레지스트의패턴 형성 방법
FR2842533B1 (fr) * 2002-07-18 2006-11-24 Hynix Semiconductor Inc Composition de revetement organique antireflet, procede de formation de motifs de photoresist a l'aide de cette composition et dispositif a semi-conducteur fabrique grace a ce procede
US7208249B2 (en) * 2002-09-30 2007-04-24 Applied Materials, Inc. Method of producing a patterned photoresist used to prepare high performance photomasks
KR20040044368A (ko) * 2002-11-20 2004-05-28 쉬플리 캄파니, 엘.엘.씨. 다층 포토레지스트 시스템
US7264913B2 (en) * 2002-11-21 2007-09-04 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
KR100832247B1 (ko) * 2002-11-27 2008-05-28 주식회사 동진쎄미켐 유기 난반사 방지막 조성물 및 이를 이용한 패턴 형성방법
KR100512171B1 (ko) * 2003-01-24 2005-09-02 삼성전자주식회사 하층 레지스트용 조성물
TWI346838B (en) * 2003-04-02 2011-08-11 Nissan Chemical Ind Ltd Epoxy compound and carboxylic acid compound containing composition for forming sublayer coating for use in lithography
WO2004092840A1 (ja) 2003-04-17 2004-10-28 Nissan Chemical Industries, Ltd. 多孔質下層膜及び多孔質下層膜を形成するための下層膜形成組成物
US7488565B2 (en) * 2003-10-01 2009-02-10 Chevron U.S.A. Inc. Photoresist compositions comprising diamondoid derivatives
US7270931B2 (en) * 2003-10-06 2007-09-18 International Business Machines Corporation Silicon-containing compositions for spin-on ARC/hardmask materials
US20050214674A1 (en) * 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US20050255410A1 (en) 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
JP4491283B2 (ja) * 2004-06-10 2010-06-30 信越化学工業株式会社 反射防止膜形成用組成物を用いたパターン形成方法
US7638266B2 (en) * 2004-08-12 2009-12-29 International Business Machines Corporation Ultrathin polymeric photoacid generator layer and method of fabricating at least one of a device and a mask by using said layer
KR100611767B1 (ko) * 2004-08-30 2006-08-10 삼성에스디아이 주식회사 레이저 전사용 도너 기판 및 그 필름을 사용하여 제조되는유기 전계 발광 소자의 제조 방법
KR100623694B1 (ko) 2004-08-30 2006-09-19 삼성에스디아이 주식회사 레이저 전사용 도너 기판 및 그 기판을 사용하여 제조되는유기 전계 발광 소자의 제조 방법
KR20060033554A (ko) * 2004-10-15 2006-04-19 삼성에스디아이 주식회사 레이저 열전사 장치 및 이를 이용한 유기전계 발광 소자의제조 방법
US20060177772A1 (en) * 2005-02-10 2006-08-10 Abdallah David J Process of imaging a photoresist with multiple antireflective coatings
US7470505B2 (en) * 2005-09-23 2008-12-30 Lexmark International, Inc. Methods for making micro-fluid ejection head structures
US20070083995A1 (en) * 2005-10-12 2007-04-19 Purdy William J Fluidized positioning and protection system
US7544750B2 (en) * 2005-10-13 2009-06-09 International Business Machines Corporation Top antireflective coating composition with low refractive index at 193nm radiation wavelength
US7816069B2 (en) * 2006-06-23 2010-10-19 International Business Machines Corporation Graded spin-on organic antireflective coating for photolithography
US7754414B2 (en) * 2006-07-12 2010-07-13 Az Electronic Materials Usa Corp. Antireflective coating compositions
JP4724072B2 (ja) * 2006-08-17 2011-07-13 富士通株式会社 レジストパターンの形成方法、半導体装置及びその製造方法
US7416834B2 (en) * 2006-09-27 2008-08-26 Az Electronic Materials Usa Corp. Antireflective coating compositions
US7666575B2 (en) * 2006-10-18 2010-02-23 Az Electronic Materials Usa Corp Antireflective coating compositions
JP5045064B2 (ja) * 2006-11-02 2012-10-10 Ｊｎｃ株式会社 アルカリ可溶性重合体及びそれを用いたポジ型感光性樹脂組成物
US7824844B2 (en) * 2007-01-19 2010-11-02 Az Electronic Materials Usa Corp. Solvent mixtures for antireflective coating compositions for photoresists
US8153346B2 (en) * 2007-02-23 2012-04-10 Fujifilm Electronic Materials, U.S.A., Inc. Thermally cured underlayer for lithographic application
JP5260094B2 (ja) * 2007-03-12 2013-08-14 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フェノール系ポリマー及びこれを含有するフォトレジスト
US7833692B2 (en) * 2007-03-12 2010-11-16 Brewer Science Inc. Amine-arresting additives for materials used in photolithographic processes
KR100886314B1 (ko) * 2007-06-25 2009-03-04 금호석유화학 주식회사 유기반사방지막용 공중합체 및 이를 포함하는유기반사방지막 조성물
US8088548B2 (en) * 2007-10-23 2012-01-03 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions
EP2220184B1 (en) * 2007-11-30 2019-03-06 Braggone OY Novel siloxane polymer compositions
US20090253081A1 (en) * 2008-04-02 2009-10-08 David Abdallah Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step
US20090253080A1 (en) * 2008-04-02 2009-10-08 Dammel Ralph R Photoresist Image-Forming Process Using Double Patterning
US20100040838A1 (en) * 2008-08-15 2010-02-18 Abdallah David J Hardmask Process for Forming a Reverse Tone Image
US8455176B2 (en) * 2008-11-12 2013-06-04 Az Electronic Materials Usa Corp. Coating composition
US8084186B2 (en) * 2009-02-10 2011-12-27 Az Electronic Materials Usa Corp. Hardmask process for forming a reverse tone image using polysilazane
US8632948B2 (en) * 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
JP5708938B2 (ja) * 2010-01-18 2015-04-30 日産化学工業株式会社 感光性レジスト下層膜形成組成物及びレジストパターンの形成方法
ES2611478T3 (es) * 2010-08-05 2017-05-09 Basf Se Procedimiento para la preparación de alcoxilatos de aminotriazina
JP5517848B2 (ja) * 2010-09-08 2014-06-11 キヤノン株式会社 液体吐出ヘッドの製造方法
US8623589B2 (en) 2011-06-06 2014-01-07 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions and processes thereof
CN103351465B (zh) * 2013-07-15 2015-09-09 京东方科技集团股份有限公司 光刻胶单体、光刻胶及它们的制备方法、彩色滤光片
CN103646672A (zh) * 2013-12-02 2014-03-19 朱嵘飞 一种集材料与结构吸波功能于一体的新型吸波功能设计
US10295907B2 (en) 2014-05-22 2019-05-21 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition for lithography containing polymer having acrylamide structure and acrylic acid ester structure
US11262656B2 (en) * 2016-03-31 2022-03-01 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
US12504693B2 (en) * 2020-02-27 2025-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist composition and method of manufacturing a semiconductor device
CN115386858B (zh) * 2022-07-15 2024-06-04 华东理工大学 一种有机无机杂化金属氧化物薄膜的气相沉积制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JPS61228438A (ja) * 1985-04-02 1986-10-11 Konishiroku Photo Ind Co Ltd 感光性組成物
DE69125634T2 (de) * 1990-01-30 1998-01-02 Wako Pure Chem Ind Ltd Chemisch verstärktes Photolack-Material
US6165697A (en) * 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
US5294680A (en) * 1992-07-24 1994-03-15 International Business Machines Corporation Polymeric dyes for antireflective coatings
DE69322946T2 (de) * 1992-11-03 1999-08-12 International Business Machines Corp., Armonk, N.Y. Photolackzusammensetzung
US5843624A (en) * 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US5652317A (en) * 1996-08-16 1997-07-29 Hoechst Celanese Corporation Antireflective coatings for photoresist compositions
TW464791B (en) * 1996-09-30 2001-11-21 Hoechst Celanese Corp Bottom antireflective coatings containing an arylhydrazo dye
US5919601A (en) * 1996-11-12 1999-07-06 Kodak Polychrome Graphics, Llc Radiation-sensitive compositions and printing plates
KR100265597B1 (ko) * 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
US5981145A (en) * 1997-04-30 1999-11-09 Clariant Finance (Bvi) Limited Light absorbing polymers

Also Published As

Publication number Publication date
CN1330779A (zh) 2002-01-09
DE69941091D1 (de) 2009-08-20
EP1131678A2 (en) 2001-09-12
MY117076A (en) 2004-04-30
JP2002530696A (ja) 2002-09-17
US6114085A (en) 2000-09-05
TWI223128B (en) 2004-11-01
KR20010089464A (ko) 2001-10-06
WO2000029906A2 (en) 2000-05-25
ATE436042T1 (de) 2009-07-15
EP1131678B1 (en) 2009-07-08
JP4452408B2 (ja) 2010-04-21
WO2000029906A3 (en) 2000-10-05
CN1215381C (zh) 2005-08-17
HK1043630A1 (zh) 2002-09-20

Similar Documents

Publication Publication Date Title
KR100613672B1 (ko) 원자외선 포토레지스트용 반사 방지 조성물
KR101253021B1 (ko) 제1 최소 기부 반사방지 코팅 조성물을 사용하여 이미지를 생성시키는 방법
EP0978015B1 (en) Light absorbing polymers
KR100484046B1 (ko) 포토레지스트 조성물용 반사 방지 코팅
KR100869484B1 (ko) 평탄화 반사방지 코팅 조성물
KR100970181B1 (ko) 포지티브형 광이미지화 가능한 하부 반사 방지 코팅
JP5320624B2 (ja) フォトレジスト用の反射防止膜組成物
US7264913B2 (en) Antireflective compositions for photoresists
US5994430A (en) Antireflective coating compositions for photoresist compositions and use thereof
KR19980071125A (ko) 광산 발생제를 포함하는 반사 방지 피복 조성물
KR20020006676A (ko) 193㎚ 석판인쇄술용 하이드록시-아미노 열 경화된 하도제
US20060057501A1 (en) Antireflective compositions for photoresists
KR20000029961A (ko) 포토레지스트조성물에사용되는반사방지코팅
KR20020071839A (ko) 포토레지스트 조성물용 반사방지 코팅
KR20090068332A (ko) 반사 방지 코팅 조성물
KR20030006956A (ko) 반사방지 코팅 조성물
HK1072814A (en) Process for producing an image using a first minimum bottom antireflective coating composition

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20010516

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20040614

Comment text: Request for Examination of Application

N231 Notification of change of applicant
PN2301 Change of applicant

Patent event date: 20050808

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20060227

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20060719

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20060810

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20060811

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20090709

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20100729

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20110728

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20120727

Year of fee payment: 7

PR1001 Payment of annual fee

Payment date: 20120727

Start annual number: 7

End annual number: 7

FPAY Annual fee payment

Payment date: 20130729

Year of fee payment: 8

PR1001 Payment of annual fee

Payment date: 20130729

Start annual number: 8

End annual number: 8

FPAY Annual fee payment

Payment date: 20140730

Year of fee payment: 9

PR1001 Payment of annual fee

Payment date: 20140730

Start annual number: 9

End annual number: 9

FPAY Annual fee payment

Payment date: 20150630

Year of fee payment: 10

PR1001 Payment of annual fee

Payment date: 20150630

Start annual number: 10

End annual number: 10

FPAY Annual fee payment

Payment date: 20160721

Year of fee payment: 11

PR1001 Payment of annual fee

Payment date: 20160721

Start annual number: 11

End annual number: 11

FPAY Annual fee payment

Payment date: 20170720

Year of fee payment: 12

PR1001 Payment of annual fee

Payment date: 20170720

Start annual number: 12

End annual number: 12

FPAY Annual fee payment

Payment date: 20180801

Year of fee payment: 13

PR1001 Payment of annual fee

Payment date: 20180801

Start annual number: 13

End annual number: 13

FPAY Annual fee payment

Payment date: 20190730

Year of fee payment: 14

PR1001 Payment of annual fee

Payment date: 20190730

Start annual number: 14

End annual number: 14

PC1801 Expiration of term

Termination date: 20200509

Termination category: Expiration of duration