KR100577127B1 - 반도체 가공에 적합한 구조 웨이퍼 수정용 작동 액체 및방법 - Google Patents

반도체 가공에 적합한 구조 웨이퍼 수정용 작동 액체 및방법 Download PDF

Info

Publication number
KR100577127B1
KR100577127B1 KR1020017011435A KR20017011435A KR100577127B1 KR 100577127 B1 KR100577127 B1 KR 100577127B1 KR 1020017011435 A KR1020017011435 A KR 1020017011435A KR 20017011435 A KR20017011435 A KR 20017011435A KR 100577127 B1 KR100577127 B1 KR 100577127B1
Authority
KR
South Korea
Prior art keywords
wafer
abrasive
copper
liquid
working liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020017011435A
Other languages
English (en)
Korean (ko)
Other versions
KR20010110655A (ko
Inventor
엘. 찰스 하디
제니퍼 엘. 트리스
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쓰리엠 이노베이티브 프로퍼티즈 캄파니 filed Critical 쓰리엠 이노베이티브 프로퍼티즈 캄파니
Publication of KR20010110655A publication Critical patent/KR20010110655A/ko
Application granted granted Critical
Publication of KR100577127B1 publication Critical patent/KR100577127B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/403Chemomechanical polishing [CMP] of conductive or resistive materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
KR1020017011435A 1999-03-10 1999-06-08 반도체 가공에 적합한 구조 웨이퍼 수정용 작동 액체 및방법 Expired - Fee Related KR100577127B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/266,208 US6238592B1 (en) 1999-03-10 1999-03-10 Working liquids and methods for modifying structured wafers suited for semiconductor fabrication
US09/266,208 1999-03-10

Publications (2)

Publication Number Publication Date
KR20010110655A KR20010110655A (ko) 2001-12-13
KR100577127B1 true KR100577127B1 (ko) 2006-05-10

Family

ID=23013625

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017011435A Expired - Fee Related KR100577127B1 (ko) 1999-03-10 1999-06-08 반도체 가공에 적합한 구조 웨이퍼 수정용 작동 액체 및방법

Country Status (13)

Country Link
US (1) US6238592B1 (https=)
EP (1) EP1163311B1 (https=)
JP (1) JP4074434B2 (https=)
KR (1) KR100577127B1 (https=)
CN (1) CN1141353C (https=)
AT (1) ATE234906T1 (https=)
AU (1) AU4336399A (https=)
BR (1) BR9917199A (https=)
DE (1) DE69906155T2 (https=)
HK (1) HK1043807B (https=)
MY (1) MY117212A (https=)
TW (1) TWI260342B (https=)
WO (1) WO2000053691A1 (https=)

Families Citing this family (129)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6245690B1 (en) * 1998-11-04 2001-06-12 Applied Materials, Inc. Method of improving moisture resistance of low dielectric constant films
JP4516176B2 (ja) * 1999-04-20 2010-08-04 関東化学株式会社 電子材料用基板洗浄液
KR20010020807A (ko) * 1999-05-03 2001-03-15 조셉 제이. 스위니 고정 연마재 제품을 사전-조절하는 방법
US20020077037A1 (en) * 1999-05-03 2002-06-20 Tietz James V. Fixed abrasive articles
US6419554B2 (en) * 1999-06-24 2002-07-16 Micron Technology, Inc. Fixed abrasive chemical-mechanical planarization of titanium nitride
TW501197B (en) * 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
TWI254070B (en) * 1999-08-18 2006-05-01 Jsr Corp Aqueous dispersion for chemical mechanical polishing
US6432826B1 (en) 1999-11-29 2002-08-13 Applied Materials, Inc. Planarized Cu cleaning for reduced defects
US6825117B2 (en) * 1999-12-14 2004-11-30 Intel Corporation High PH slurry for chemical mechanical polishing of copper
US7041599B1 (en) * 1999-12-21 2006-05-09 Applied Materials Inc. High through-put Cu CMP with significantly reduced erosion and dishing
US6638143B2 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Ion exchange materials for chemical mechanical polishing
US6531071B1 (en) * 2000-01-04 2003-03-11 Micron Technology, Inc. Passivation for cleaning a material
US7670468B2 (en) 2000-02-17 2010-03-02 Applied Materials, Inc. Contact assembly and method for electrochemical mechanical processing
US7077721B2 (en) 2000-02-17 2006-07-18 Applied Materials, Inc. Pad assembly for electrochemical mechanical processing
US7059948B2 (en) * 2000-12-22 2006-06-13 Applied Materials Articles for polishing semiconductor substrates
US7303662B2 (en) * 2000-02-17 2007-12-04 Applied Materials, Inc. Contacts for electrochemical processing
US20040020789A1 (en) * 2000-02-17 2004-02-05 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7303462B2 (en) * 2000-02-17 2007-12-04 Applied Materials, Inc. Edge bead removal by an electro polishing process
US6962524B2 (en) * 2000-02-17 2005-11-08 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7066800B2 (en) * 2000-02-17 2006-06-27 Applied Materials Inc. Conductive polishing article for electrochemical mechanical polishing
US7678245B2 (en) * 2000-02-17 2010-03-16 Applied Materials, Inc. Method and apparatus for electrochemical mechanical processing
US7374644B2 (en) 2000-02-17 2008-05-20 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6979248B2 (en) * 2002-05-07 2005-12-27 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6537144B1 (en) 2000-02-17 2003-03-25 Applied Materials, Inc. Method and apparatus for enhanced CMP using metals having reductive properties
US6991528B2 (en) * 2000-02-17 2006-01-31 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7125477B2 (en) * 2000-02-17 2006-10-24 Applied Materials, Inc. Contacts for electrochemical processing
US20050092621A1 (en) * 2000-02-17 2005-05-05 Yongqi Hu Composite pad assembly for electrochemical mechanical processing (ECMP)
US6848970B2 (en) * 2002-09-16 2005-02-01 Applied Materials, Inc. Process control in electrochemically assisted planarization
US7029365B2 (en) 2000-02-17 2006-04-18 Applied Materials Inc. Pad assembly for electrochemical mechanical processing
US6451697B1 (en) 2000-04-06 2002-09-17 Applied Materials, Inc. Method for abrasive-free metal CMP in passivation domain
US6700670B1 (en) 2000-05-23 2004-03-02 Nanometrics Incorporated Method of measuring dishing using relative height measurements
US6710888B1 (en) * 2000-05-23 2004-03-23 Nanometrics Incorporated Method of measuring dishing
US6653242B1 (en) 2000-06-30 2003-11-25 Applied Materials, Inc. Solution to metal re-deposition during substrate planarization
US6568290B1 (en) 2000-08-10 2003-05-27 Nanometrics Incorporated Method of measuring dishing using relative height measurement
US7220322B1 (en) 2000-08-24 2007-05-22 Applied Materials, Inc. Cu CMP polishing pad cleaning
US6702954B1 (en) * 2000-10-19 2004-03-09 Ferro Corporation Chemical-mechanical polishing slurry and method
US6569349B1 (en) * 2000-10-23 2003-05-27 Applied Materials Inc. Additives to CMP slurry to polish dielectric films
US6709316B1 (en) * 2000-10-27 2004-03-23 Applied Materials, Inc. Method and apparatus for two-step barrier layer polishing
US6524167B1 (en) 2000-10-27 2003-02-25 Applied Materials, Inc. Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
JP3825246B2 (ja) * 2000-11-24 2006-09-27 Necエレクトロニクス株式会社 化学的機械的研磨用スラリー
US6633389B1 (en) 2000-11-28 2003-10-14 Nanometrics Incorporated Profiling method
US20020068454A1 (en) * 2000-12-01 2002-06-06 Applied Materials, Inc. Method and composition for the removal of residual materials during substrate planarization
US6896776B2 (en) * 2000-12-18 2005-05-24 Applied Materials Inc. Method and apparatus for electro-chemical processing
US6530824B2 (en) * 2001-03-09 2003-03-11 Rodel Holdings, Inc. Method and composition for polishing by CMP
US7160432B2 (en) 2001-03-14 2007-01-09 Applied Materials, Inc. Method and composition for polishing a substrate
US7323416B2 (en) * 2001-03-14 2008-01-29 Applied Materials, Inc. Method and composition for polishing a substrate
US20060169597A1 (en) * 2001-03-14 2006-08-03 Applied Materials, Inc. Method and composition for polishing a substrate
US6811680B2 (en) * 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US6899804B2 (en) 2001-04-10 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US7128825B2 (en) 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US7232514B2 (en) 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
US7582564B2 (en) * 2001-03-14 2009-09-01 Applied Materials, Inc. Process and composition for conductive material removal by electrochemical mechanical polishing
US6540935B2 (en) * 2001-04-05 2003-04-01 Samsung Electronics Co., Ltd. Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same
US7137879B2 (en) * 2001-04-24 2006-11-21 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7344432B2 (en) * 2001-04-24 2008-03-18 Applied Materials, Inc. Conductive pad with ion exchange membrane for electrochemical mechanical polishing
US6580515B1 (en) 2001-05-29 2003-06-17 Nanometrics Incorporated Surface profiling using a differential interferometer
US6783432B2 (en) 2001-06-04 2004-08-31 Applied Materials Inc. Additives for pressure sensitive polishing compositions
US6485355B1 (en) * 2001-06-22 2002-11-26 International Business Machines Corporation Method to increase removal rate of oxide using fixed-abrasive
US6592742B2 (en) * 2001-07-13 2003-07-15 Applied Materials Inc. Electrochemically assisted chemical polish
US7104869B2 (en) * 2001-07-13 2006-09-12 Applied Materials, Inc. Barrier removal at low polish pressure
US7008554B2 (en) * 2001-07-13 2006-03-07 Applied Materials, Inc. Dual reduced agents for barrier removal in chemical mechanical polishing
US6800218B2 (en) * 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
TW583731B (en) * 2001-08-23 2004-04-11 Mykrolis Corp Process, system, and liquid composition for selectively removing a metal film
US6677239B2 (en) 2001-08-24 2004-01-13 Applied Materials Inc. Methods and compositions for chemical mechanical polishing
JP4803625B2 (ja) * 2001-09-04 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US20030072639A1 (en) * 2001-10-17 2003-04-17 Applied Materials, Inc. Substrate support
US6705926B2 (en) * 2001-10-24 2004-03-16 Cabot Microelectronics Corporation Boron-containing polishing system and method
JP3692067B2 (ja) 2001-11-30 2005-09-07 株式会社東芝 銅のcmp用研磨スラリーおよびそれを用いた半導体装置の製造方法
US20070295611A1 (en) * 2001-12-21 2007-12-27 Liu Feng Q Method and composition for polishing a substrate
KR100478483B1 (ko) * 2002-10-02 2005-03-28 동부아남반도체 주식회사 반도체 소자의 제조 방법
US6821309B2 (en) * 2002-02-22 2004-11-23 University Of Florida Chemical-mechanical polishing slurry for polishing of copper or silver films
KR100442873B1 (ko) * 2002-02-28 2004-08-02 삼성전자주식회사 화학적 기계적 폴리싱 슬러리 및 이를 사용한 화학적기계적 폴리싱 방법
US6783690B2 (en) * 2002-03-25 2004-08-31 Donna M. Kologe Method of stripping silver from a printed circuit board
US20050194681A1 (en) * 2002-05-07 2005-09-08 Yongqi Hu Conductive pad with high abrasion
US20030209523A1 (en) * 2002-05-09 2003-11-13 Applied Materials, Inc. Planarization by chemical polishing for ULSI applications
CN1333444C (zh) * 2002-11-12 2007-08-22 阿科玛股份有限公司 使用磺化两性试剂的铜化学机械抛光溶液
CN100509980C (zh) * 2002-12-02 2009-07-08 阿科玛股份有限公司 用于铜化学机械平整化加工的组合物及方法
JP4267331B2 (ja) * 2003-01-14 2009-05-27 株式会社荏原製作所 基板の処理方法及びエッチング液
US7040966B2 (en) * 2003-04-16 2006-05-09 Applied Materials Carbonation of pH controlled KOH solution for improved polishing of oxide films on semiconductor wafers
WO2004101222A2 (en) * 2003-05-12 2004-11-25 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for step-ii copper liner and other associated materials and method of using same
US7390429B2 (en) * 2003-06-06 2008-06-24 Applied Materials, Inc. Method and composition for electrochemical mechanical polishing processing
US20050092620A1 (en) * 2003-10-01 2005-05-05 Applied Materials, Inc. Methods and apparatus for polishing a substrate
US7278904B2 (en) * 2003-11-26 2007-10-09 3M Innovative Properties Company Method of abrading a workpiece
US7186164B2 (en) * 2003-12-03 2007-03-06 Applied Materials, Inc. Processing pad assembly with zone control
US20050178666A1 (en) * 2004-01-13 2005-08-18 Applied Materials, Inc. Methods for fabrication of a polishing article
US7390744B2 (en) * 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US7323421B2 (en) * 2004-06-16 2008-01-29 Memc Electronic Materials, Inc. Silicon wafer etching process and composition
US20060030156A1 (en) * 2004-08-05 2006-02-09 Applied Materials, Inc. Abrasive conductive polishing article for electrochemical mechanical polishing
US7210988B2 (en) 2004-08-24 2007-05-01 Applied Materials, Inc. Method and apparatus for reduced wear polishing pad conditioning
JP2006080388A (ja) * 2004-09-10 2006-03-23 Nitta Haas Inc 金属研磨用組成物
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
WO2006039436A2 (en) * 2004-10-01 2006-04-13 Applied Materials, Inc. Pad design for electrochemical mechanical polishing
US7520968B2 (en) * 2004-10-05 2009-04-21 Applied Materials, Inc. Conductive pad design modification for better wafer-pad contact
JP2006179845A (ja) 2004-11-26 2006-07-06 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法
US20060118760A1 (en) * 2004-12-03 2006-06-08 Yang Andy C Slurry composition and methods for chemical mechanical polishing
US20060169674A1 (en) * 2005-01-28 2006-08-03 Daxin Mao Method and composition for polishing a substrate
US20060196778A1 (en) * 2005-01-28 2006-09-07 Renhe Jia Tungsten electroprocessing
US7427340B2 (en) * 2005-04-08 2008-09-23 Applied Materials, Inc. Conductive pad
US20060249394A1 (en) * 2005-05-05 2006-11-09 Applied Materials, Inc. Process and composition for electrochemical mechanical polishing
US20060249395A1 (en) * 2005-05-05 2006-11-09 Applied Material, Inc. Process and composition for electrochemical mechanical polishing
US7442319B2 (en) * 2005-06-28 2008-10-28 Micron Technology, Inc. Poly etch without separate oxide decap
KR20080036051A (ko) * 2005-08-04 2008-04-24 아사히 가라스 가부시키가이샤 연마제 조성물 및 연마 방법
JP5026710B2 (ja) * 2005-09-02 2012-09-19 株式会社フジミインコーポレーテッド 研磨用組成物
TWI385226B (zh) * 2005-09-08 2013-02-11 羅門哈斯電子材料Cmp控股公司 用於移除聚合物阻障之研磨漿液
US7767009B2 (en) * 2005-09-14 2010-08-03 OMG Electronic Chemicals, Inc. Solution and process for improving the solderability of a metal surface
US7435162B2 (en) * 2005-10-24 2008-10-14 3M Innovative Properties Company Polishing fluids and methods for CMP
WO2007094869A2 (en) 2005-10-31 2007-08-23 Applied Materials, Inc. Electrochemical method for ecmp polishing pad conditioning
KR20070088245A (ko) * 2006-02-24 2007-08-29 후지필름 가부시키가이샤 금속용 연마액
US20070232510A1 (en) * 2006-03-29 2007-10-04 Kucera Alvin A Method and composition for selectively stripping silver from a substrate
US20070254485A1 (en) * 2006-04-28 2007-11-01 Daxin Mao Abrasive composition for electrochemical mechanical polishing
CN100491072C (zh) * 2006-06-09 2009-05-27 河北工业大学 Ulsi多层铜布线化学机械抛光中碟形坑的控制方法
JP2008277723A (ja) 2007-03-30 2008-11-13 Fujifilm Corp 金属用研磨液及び研磨方法
US20080293343A1 (en) * 2007-05-22 2008-11-27 Yuchun Wang Pad with shallow cells for electrochemical mechanical processing
JP2009088486A (ja) * 2007-08-29 2009-04-23 Applied Materials Inc 高スループット低形状銅cmp処理
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
US9202709B2 (en) 2008-03-19 2015-12-01 Fujifilm Corporation Polishing liquid for metal and polishing method using the same
WO2009140622A2 (en) * 2008-05-15 2009-11-19 3M Innovative Properties Company Polishing pad with endpoint window and systems and method using the same
KR20110019442A (ko) * 2008-06-26 2011-02-25 쓰리엠 이노베이티브 프로퍼티즈 캄파니 다공성 요소를 구비한 연마 패드 및 이 연마 패드의 제작 방법 및 이용 방법
US20110183583A1 (en) * 2008-07-18 2011-07-28 Joseph William D Polishing Pad with Floating Elements and Method of Making and Using the Same
WO2011082155A2 (en) 2009-12-30 2011-07-07 3M Innovative Properties Company Polishing pads including phase-separated polymer blend and method of making and using the same
IL204422A0 (en) * 2010-03-11 2010-12-30 J G Systems Inc METHOD AND COMPOSITION TO ENHANCE CORROSION RESISTANCE OF THROUGH HOLE COPPER PLATED PWBs FINISHED WITH AN IMMERSION METAL COATING SUCH AS Ag OR Sn
EP2555229A4 (en) * 2010-03-29 2017-02-01 Asahi Glass Company, Limited Polishing agent, polishing method and method for manufacturing semiconductor integrated circuit device
WO2011152966A2 (en) * 2010-06-01 2011-12-08 Applied Materials, Inc. Chemical planarization of copper wafer polishing
WO2012071243A2 (en) 2010-11-22 2012-05-31 3M Innovative Properties Company Assembly and electronic devices including the same
US20150166862A1 (en) * 2012-07-17 2015-06-18 Fujimi Incorporated Composition for polishing alloy material and method for producing alloy material using same
US9388330B2 (en) * 2012-12-17 2016-07-12 Fuji Engineering Co., Ltd. Bag containing blasting material
US10247700B2 (en) * 2015-10-30 2019-04-02 International Business Machines Corporation Embedded noble metal electrodes in microfluidics
US10364373B2 (en) * 2016-10-11 2019-07-30 Fujifilm Electronic Materials U.S.A., Inc. Elevated temperature CMP compositions and methods for use thereof
CN111300259A (zh) * 2020-02-18 2020-06-19 北京芯之路企业管理中心(有限合伙) 一种碳化硅晶圆的研磨抛光装置与其制程方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL149551B (nl) 1964-08-04 1976-05-17 Dow Chemical Co Werkwijze voor het reinigen en passiveren van ijzerhoudende metaaloppervlakken, waarop metallisch koper is afgezet.
US3504457A (en) 1966-07-05 1970-04-07 Geoscience Instr Corp Polishing apparatus
US3499250A (en) 1967-04-07 1970-03-10 Geoscience Instr Corp Polishing apparatus
US4512113A (en) 1982-09-23 1985-04-23 Budinger William D Workpiece holder for polishing operation
US4642221A (en) 1983-07-05 1987-02-10 Atlantic Richfield Company Method and composition for inhibiting corrosion in aqueous heat transfer systems
US4879258A (en) 1988-08-31 1989-11-07 Texas Instruments Incorporated Integrated circuit planarization by mechanical polishing
US5257478A (en) 1990-03-22 1993-11-02 Rodel, Inc. Apparatus for interlayer planarization of semiconductor material
MY114512A (en) * 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US5575885A (en) * 1993-12-14 1996-11-19 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing semiconductor device
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
JP3397501B2 (ja) * 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
JPH08207388A (ja) * 1995-02-03 1996-08-13 Brother Ind Ltd プリンタ
US6046110A (en) 1995-06-08 2000-04-04 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing a semiconductor device
JPH0982668A (ja) 1995-09-20 1997-03-28 Sony Corp 研磨用スラリー及びこの研磨用スラリーを用いる研磨方法
US5700383A (en) * 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
JPH09258397A (ja) * 1996-03-19 1997-10-03 Fuji Photo Film Co Ltd ハロゲン化銀感光材料
US6309560B1 (en) 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6083419A (en) 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US5897375A (en) * 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture

Also Published As

Publication number Publication date
US6238592B1 (en) 2001-05-29
TWI260342B (en) 2006-08-21
EP1163311B1 (en) 2003-03-19
DE69906155T2 (de) 2004-02-12
AU4336399A (en) 2000-09-28
HK1043807A1 (en) 2002-09-27
DE69906155D1 (de) 2003-04-24
CN1337983A (zh) 2002-02-27
JP2002538284A (ja) 2002-11-12
WO2000053691A1 (en) 2000-09-14
KR20010110655A (ko) 2001-12-13
CN1141353C (zh) 2004-03-10
HK1043807B (en) 2004-03-05
BR9917199A (pt) 2002-01-08
MY117212A (en) 2004-05-31
ATE234906T1 (de) 2003-04-15
JP4074434B2 (ja) 2008-04-09
EP1163311A1 (en) 2001-12-19

Similar Documents

Publication Publication Date Title
KR100577127B1 (ko) 반도체 가공에 적합한 구조 웨이퍼 수정용 작동 액체 및방법
CN1329467C (zh) 用于铜膜平面化的钝化化学机械抛光组合物
TWI421317B (zh) 拋光液及化學機械拋光(cmp)方法
EP2186121B1 (en) Compositions and methods for modifying a surface suited for semiconductor fabrication
KR20020016596A (ko) 연마용 조성물 및 그를 이용한 연마 방법
EP1505639A1 (en) Polishing fluid and polishing method
US7012025B2 (en) Tantalum removal during chemical mechanical polishing
JP2002511650A (ja) 化学的−機械的金属表面研磨用スラリ
EP2242091A1 (en) Polishing solution for metal and polishing method
KR20000068476A (ko) 티타늄 함유 복합체 연마용 조성물 및 방법
US8841216B2 (en) Method and composition for chemical mechanical planarization of a metal
CN101240147A (zh) 用于铜的化学机械平坦化的组合物
TWI635168B (zh) Chemical mechanical polishing slurry
TWI294456B (https=)
TWI434881B (zh) 金屬膜用研磨液以及使用該研磨液的研磨方法
US8697577B2 (en) Method and composition for chemical mechanical planarization of a metal or a metal alloy
US20060084271A1 (en) Systems, methods and slurries for chemical mechanical polishing
KR101281947B1 (ko) 할로겐 부가물을 이용하는 cmp 시스템
JPH10279926A (ja) 研磨液
Cheemalapati et al. Novel pure organic particles for copper CMP at low down force

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20130403

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20140401

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

FPAY Annual fee payment

Payment date: 20170330

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20180429

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20180429

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000