KR100572916B1 - 압전체 및 그 제조방법, 그리고 이 압전체를 구비한 압전소자, 잉크젯헤드 및 잉크젯방식 기록장치 - Google Patents
압전체 및 그 제조방법, 그리고 이 압전체를 구비한 압전소자, 잉크젯헤드 및 잉크젯방식 기록장치 Download PDFInfo
- Publication number
- KR100572916B1 KR100572916B1 KR20037013133A KR20037013133A KR100572916B1 KR 100572916 B1 KR100572916 B1 KR 100572916B1 KR 20037013133 A KR20037013133 A KR 20037013133A KR 20037013133 A KR20037013133 A KR 20037013133A KR 100572916 B1 KR100572916 B1 KR 100572916B1
- Authority
- KR
- South Korea
- Prior art keywords
- piezoelectric body
- site
- piezoelectric
- electrode
- atoms
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229910052745 lead Inorganic materials 0.000 claims abstract description 47
- 239000013078 crystal Substances 0.000 claims abstract description 45
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 40
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000004544 sputter deposition Methods 0.000 claims description 51
- 239000007789 gas Substances 0.000 claims description 25
- 239000000203 mixture Substances 0.000 claims description 24
- 230000000694 effects Effects 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 230000010287 polarization Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 6
- 239000004615 ingredient Substances 0.000 abstract 1
- 125000004429 atom Chemical group 0.000 description 72
- 239000010936 titanium Substances 0.000 description 43
- 239000010408 film Substances 0.000 description 20
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 14
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 10
- 229910020669 PbOx Inorganic materials 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical group [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910020684 PbZr Inorganic materials 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000000634 powder X-ray diffraction Methods 0.000 description 2
- JFWLFXVBLPDVDZ-UHFFFAOYSA-N [Ru]=O.[Sr] Chemical compound [Ru]=O.[Sr] JFWLFXVBLPDVDZ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical group [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
- B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1645—Manufacturing processes thin film formation thin film formation by spincoating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G21/00—Compounds of lead
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G25/00—Compounds of zirconium
- C01G25/006—Compounds containing, besides zirconium, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
- C04B35/491—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/30—Three-dimensional structures
- C01P2002/34—Three-dimensional structures perovskite-type (ABO3)
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3213—Strontium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3227—Lanthanum oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3296—Lead oxides, plumbates or oxide forming salts thereof, e.g. silver plumbate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
- C04B2235/768—Perovskite structure ABO3
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/787—Oriented grains
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/79—Non-stoichiometric products, e.g. perovskites (ABO3) with an A/B-ratio other than 1
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Composite Materials (AREA)
- Structural Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
Claims (19)
- 식 ABO3으로 표시되는 페로브스카이트형 결정구조를 갖는 압전체로서,상기 A사이트의 주성분이 Pb이며,상기 B사이트의 주성분이 Zr, Ti 및 Pb이고,상기 B사이트에서 전체 원자에 대한 Pb원자의 점유율이 3% 이상 30% 이하인 것을 특징으로 하는 압전체.
- 제 1 항에 있어서,B사이트에 있어서 Zr과 Ti의 조성 몰비(Zr/(Ti+Zr))가, 0.3 이상 0.7 이하인 것을 특징으로 하는 압전체.
- 제 1 항에 있어서,결정구조가 (001)면 또는 (111)면으로 우선배향하며 또 분극축이 1 축 방향으로 일치된 것임을 특징으로 하는 압전체.
- 식 ABO3으로 표시되는 페로브스카이트형 결정구조를 갖는 압전체로서,상기 A사이트의 주성분이 Pb이며,상기 B사이트의 주성분이 Zr, Ti 및 Pb이고,상기 A사이트의 Pb원자가 Pb2+로서 존재하는 한편, B사이트의 Pb원자가 Pb4+로서 존재하는 것을 특징으로 하는 압전체.
- 제 4 항에 있어서,B사이트에서 전체원자에 대한 Pb원자의 점유율이 3% 이상 30% 이하인 것을 특징으로 하는 압전체.
- 제 4 항에 있어서,B사이트에서의 Zr과 Ti의 조성 몰비(Zr/(Ti+Zr))가, 0.3 이상 0.7 이하인 것을 특징으로 하는 압전체.
- 제 4 항에 있어서,결정구조가 (001)면 또는 (111)면으로 우선배향하며 또 분극축이 1 축 방향으로 일치된 것임을 특징으로 하는 압전체.
- 식 ABO3으로 표시되며 이 A사이트의 주성분이 Pb이고 또 B사이트의 주성분이 Zr, Ti 및 Pb인 페로브스카이트형 결정구조를 갖는 압전체를, 기판 상에 스퍼터링법으로 성막시켜 제조하는 압전체의 제조방법이며,상기 스퍼터링 시의 상기 기판 온도를 400℃ 이상 700℃ 이하로 설정하고,상기 스퍼터링 시에 사용하는 스퍼터링 가스를 아르곤과 산소의 혼합가스로 함과 동시에, 이 스퍼터링 가스의 산소분압을 2% 이상 30% 이하로 설정하며,상기 스퍼터링 가스압력을 0.01Pa 이상 3.0Pa 이하로 설정하고,상기 스퍼터링 시에 타겟에 인가하는 고주파전력 밀도를 1.0W/㎠ 이상 10W/㎠로 설정하는 것을 특징으로 하는 압전체의 제조방법.
- 제 8 항에 있어서,스퍼터링 가스압력을 0.01Pa 이상 1.0Pa 이하로 설정하는 것을 특징으로 하는 압전체의 제조방법.
- 제 8 항에 있어서,스퍼터링 가스의 산소분압을 2% 이상 10% 이하로 설정하는 것을 특징으로 하는 압전체의 제조방법.
- 제 8 항에 있어서,스퍼터링 시에 타겟에 인가하는 고주파전력 밀도를 2.5W/㎠ 이상 10W/㎠ 이하로 설정하는 것을 특징으로 하는 압전체의 제조방법.
- 기판 상에 형성된 제 1 전극과, 이 제 1 전극 상에 형성되며, 식 ABO3으로 표시되는 페로브스카이트형 결정구조를 갖는 압전체와, 이 압전체 상에 형성된 제 2 전극을 구비하는 압전소자로서,상기 압전체의 A사이트 주성분이 Pb이며,상기 압전체의 B사이트 주성분이 Zr, Ti 및 Pb이고,상기 압전체의 B사이트에서 전체원자에 대한 Pb원자의 점유율이 3% 이상 30% 이하인 것을 특징으로 하는 압전소자.
- 제 12 항에 있어서,압전체 B사이트에서의 Zr과 Ti의 조성 몰비(Zr/(Ti+Zr))가, 제 1 전극 쪽에서 제 2 전극 쪽을 향해 커지는 것을 특징으로 하는 압전소자.
- 기판 상에 형성된 제 1 전극과, 이 제 1 전극 상에 형성되며, 식 ABO3으로 표시되는 페로브스카이트형 결정구조를 갖는 압전체와, 이 압전체 상에 형성된 제 2 전극을 구비한 압전소자로서,상기 압전체의 A사이트 주성분이 Pb이며,상기 압전체의 B사이트 주성분이 Zr, Ti 및 Pb이고,상기 압전체 A사이트의 Pb원자가 Pb2+로 존재하는 한편, B사이트의 Pb원자가 Pb4+로 존재하는 것을 특징으로 하는 압전소자.
- 제 14 항에 있어서,압전체 B사이트에서의 Zr과 Ti의 조성 몰비(Zr/(Ti+Zr))가, 제 1 전극 쪽에서 제 2 전극 쪽을 향해 커지는 것을 특징으로 하는 압전소자.
- 식 ABO3으로 표시되는 페로브스카이트형 결정구조를 갖는 압전체와, 이 압전체의 두께방향 양면에 각각 형성된 한 쌍의 전극과, 이 한쪽 전극의 상기 압전체와는 반대쪽 면에 형성된 진동판과, 이 진동판의 상기 전극과는 반대쪽 면에 접합되며, 잉크를 수용하는 압력실을 구성하기 위한 압력실 부재를 구비하고, 상기 압전체의 압전효과에 의해 상기 진동판을 두께방향으로 변위시켜 상기 압력실 내의 잉크를 토출시키도록 구성된 잉크젯헤드로서,상기 압전체의 A사이트 주성분이 Pb이며,상기 압전체의 B사이트 주성분이 Zr, Ti 및 Pb이고,상기 압전체의 B사이트에서 전체원자에 대한 Pb원자의 점유율이 3% 이상 30% 이하인 것을 특징으로 하는 잉크젯헤드.
- 식 ABO3으로 표시되는 페로브스카이트형 결정구조를 갖는 압전체와, 이 압전체의 두께방향 양면에 각각 형성된 한 쌍의 전극과, 이 한쪽 전극의 상기 압전체와는 반대쪽 면에 형성된 진동판과, 이 진동판의 상기 전극과는 반대쪽 면에 접합되며, 잉크를 수용하는 압력실을 구성하기 위한 압력실 부재를 구비하고, 상기 압전체의 압전효과에 의해 상기 진동판을 두께방향으로 변위시켜 상기 압력실 내의 잉 크를 토출시키도록 구성된 잉크젯헤드로서,상기 압전체의 A사이트 주성분이 Pb이며,상기 압전체의 B사이트 주성분이 Zr, Ti 및 Pb이고,상기 압전체 A사이트의 Pb원자가 Pb2+로 존재하는 한편, B사이트의 Pb원자가 Pb4+로 존재하는 것을 특징으로 하는 잉크젯헤드.
- 식 ABO3으로 표시되는 페로브스카이트형 결정구조를 갖는 압전체와, 이 압전체의 두께방향 양면에 각각 형성된 한 쌍의 전극과, 이 한쪽 전극의 상기 압전체와는 반대쪽 면에 형성된 진동판과, 이 진동판의 상기 전극과는 반대쪽 면에 접합되며 잉크를 수용하는 압력실을 구성하기 위한 압력실 부재를 구비하고 또 기록매체에 대해 상대이동 가능하게 구성된 잉크젯헤드를 구비하며, 이 잉크젯헤드가 기록매체에 대해 상대이동 할 때, 이 잉크젯헤드에서 압전체의 압전효과에 의해 상기 진동판을 두께방향으로 변위시켜, 상기 압력실 내의 잉크를, 이 압력실로 연통되는 노즐구멍으로부터 상기 기록매체로 토출시켜 기록을 행하도록 구성된 잉크젯방식 기록장치로서,상기 잉크젯헤드에서 압전체 A사이트의 주성분이 Pb이며,상기 압전체 B사이트의 주성분이 Zr, Ti 및 Pb이고,상기 압전체의 B사이트에서 전체원자에 대한 Pb원자의 점유율이 3% 이상 30% 이하인 것을 특징으로 하는 잉크젯방식 기록장치.
- 식 ABO3으로 표시되는 페로브스카이트형 결정구조를 갖는 압전체와, 이 압전체의 두께방향 양면에 각각 형성된 한 쌍의 전극과, 이 한쪽 전극의 상기 압전체와는 반대쪽 면에 형성된 진동판과, 이 진동판의 상기 전극과는 반대쪽 면에 접합되고, 또 잉크를 수용하는 압력실을 구성하기 위한 압력실 부재를 구비하며 또 기록매체에 대해 상대이동 가능하게 구성된 잉크젯헤드를 구비하며, 이 잉크젯헤드가 기록매체에 대해 상대이동할 때, 이 잉크젯헤드에서 압전체의 압전효과에 의해 상기 진동판을 두께방향으로 변위시켜, 상기 압력실 내의 잉크를, 이 압력실로 연통하는 노즐구멍으로부터 상기 기록매체로 토출시켜 기록을 행하도록 구성된 잉크젯방식 기록장치로서,상기 잉크젯헤드에서 압전체의 A사이트 주성분이 Pb이며,상기 압전체의 B사이트 주성분이 Zr, Ti 및 Pb이고,상기 압전체 A사이트의 Pb원자가 Pb2+로 존재하는 한편, B사이트의 Pb원자가 Pb4+로 존재하는 것을 특징으로 하는 잉크젯방식 기록장치.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2002-00041058 | 2002-02-19 | ||
JP2002041058 | 2002-02-19 | ||
PCT/JP2003/001826 WO2003070641A1 (fr) | 2002-02-19 | 2003-02-19 | Corps piezo-electrique, son procede de fabrication, element piezo-electrique comportant le corps piezo-electrique, tete d'injection, et dispositif d'enregistrement de type a injection |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040020050A KR20040020050A (ko) | 2004-03-06 |
KR100572916B1 true KR100572916B1 (ko) | 2006-04-24 |
Family
ID=27750456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR20037013133A KR100572916B1 (ko) | 2002-02-19 | 2003-02-19 | 압전체 및 그 제조방법, 그리고 이 압전체를 구비한 압전소자, 잉크젯헤드 및 잉크젯방식 기록장치 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7048360B2 (ko) |
EP (1) | EP1452490B1 (ko) |
JP (1) | JP4428509B2 (ko) |
KR (1) | KR100572916B1 (ko) |
CN (1) | CN1514808B (ko) |
AU (1) | AU2003211331A1 (ko) |
WO (1) | WO2003070641A1 (ko) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004288696A (ja) * | 2003-03-19 | 2004-10-14 | Fujitsu Ltd | 半導体装置の製造方法 |
JP4554232B2 (ja) * | 2004-02-17 | 2010-09-29 | 株式会社デンソー | 圧電スタック及び圧電スタックの製造方法 |
JP4552450B2 (ja) * | 2004-02-17 | 2010-09-29 | 株式会社デンソー | 圧電スタックの製造方法 |
JP5297576B2 (ja) * | 2005-03-28 | 2013-09-25 | セイコーエプソン株式会社 | 圧電素子及びアクチュエータ装置並びに液体噴射ヘッド及び液体噴射装置 |
JP2006310746A (ja) * | 2005-03-30 | 2006-11-09 | Seiko Epson Corp | 圧電素子並びに圧電素子を用いた液体噴射ヘッド及び液体噴射装置 |
JP5019020B2 (ja) * | 2005-03-31 | 2012-09-05 | セイコーエプソン株式会社 | 誘電体膜の製造方法及び圧電体素子の製造方法並びに液体噴射ヘッドの製造方法 |
JP2006297688A (ja) * | 2005-04-19 | 2006-11-02 | Matsushita Electric Ind Co Ltd | ノズル板の製造方法、そのノズル板の製造方法を用いたノズル板およびそのノズル板を用いたインクジェットヘッド |
KR100695727B1 (ko) * | 2005-06-10 | 2007-03-15 | (주)피에조랩 | 압전 복합체 센서 |
WO2007063850A1 (ja) | 2005-11-29 | 2007-06-07 | Kyocera Corporation | 積層型電子部品およびその製造方法 |
JP5398131B2 (ja) * | 2006-07-14 | 2014-01-29 | キヤノン株式会社 | 圧電体素子、圧電体の製造方法及び液体噴射ヘッド |
US20080224571A1 (en) * | 2007-03-15 | 2008-09-18 | Seiko Epson Corporation | Piezoelectric element, liquid jet head and printer |
JP5216319B2 (ja) * | 2007-12-27 | 2013-06-19 | 株式会社アルバック | チタン酸ジルコン酸鉛系焼結体の製造方法 |
JP5344864B2 (ja) | 2008-07-31 | 2013-11-20 | 富士フイルム株式会社 | 成膜装置および成膜方法 |
JP5499533B2 (ja) * | 2008-10-06 | 2014-05-21 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射装置、アクチュエーター装置及び圧電素子 |
JP5491085B2 (ja) * | 2008-11-10 | 2014-05-14 | 日本碍子株式会社 | セラミックスシートの製造方法 |
KR101036964B1 (ko) * | 2008-12-05 | 2011-05-25 | 현대자동차주식회사 | 레버를 갖는 자동차용 커넥터장치 |
JP5344143B2 (ja) * | 2008-12-11 | 2013-11-20 | セイコーエプソン株式会社 | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 |
JP4438892B1 (ja) * | 2009-02-03 | 2010-03-24 | 富士フイルム株式会社 | 圧電体とその製造方法、圧電素子、及び液体吐出装置 |
JP4438893B1 (ja) * | 2009-02-04 | 2010-03-24 | 富士フイルム株式会社 | 圧電体とその製造方法、圧電素子、及び液体吐出装置 |
JP5568913B2 (ja) * | 2009-07-24 | 2014-08-13 | 株式会社ユーテック | Pzt膜の製造方法及び水蒸気加熱装置 |
WO2012026055A1 (ja) * | 2010-08-23 | 2012-03-01 | パナソニック株式会社 | アクチュエータ、及びアクチュエータを駆動する方法 |
US9130169B2 (en) | 2013-03-14 | 2015-09-08 | Tdk Corporation | Piezoelectric element, piezoelectric actuator, piezoelectric sensor, hard disk drive, and inkjet printer device |
US9076968B2 (en) | 2013-03-14 | 2015-07-07 | Tdk Corporation | Piezoelectric element, piezoelectric actuator, piezoelectric sensor, hard disk drive, and inkjet printer device |
US9216410B2 (en) * | 2013-06-06 | 2015-12-22 | Clean Diesel Technologies, Inc. | Systems and methods for using Pd1+ in a TWC |
US9022532B1 (en) * | 2013-10-21 | 2015-05-05 | Tdk Corporation | Piezoelectric element, piezoelectric actuator, piezoelectric sensor, hard disk drive, and ink-jet printer device |
JP6468881B2 (ja) * | 2015-02-24 | 2019-02-13 | コニカミノルタ株式会社 | 圧電薄膜、圧電薄膜の製造方法、圧電薄膜付き基板、圧電アクチュエータ、圧電センサ、インクジェットヘッドおよびインクジェットプリンタ |
JP2018082051A (ja) * | 2016-11-16 | 2018-05-24 | セイコーエプソン株式会社 | 圧電素子及び圧電素子応用デバイス |
US10843464B2 (en) | 2018-07-27 | 2020-11-24 | Ricoh Company, Ltd. | Electromechanical transducer element, liquid discharge head, liquid discharge apparatus |
CN112853286A (zh) * | 2019-11-12 | 2021-05-28 | 应用材料公司 | 压电膜的物理气相沉积 |
CN111013901B (zh) * | 2019-12-10 | 2021-07-13 | 深圳先进技术研究院 | 柔性传感器制造设备和柔性传感器的制作方法 |
JP2023020497A (ja) * | 2021-07-30 | 2023-02-09 | キヤノン株式会社 | 記録システム、記録システムの制御方法、およびプログラム |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5338999A (en) * | 1993-05-05 | 1994-08-16 | Motorola, Inc. | Piezoelectric lead zirconium titanate device and method for forming same |
KR19990022625A (ko) * | 1995-06-06 | 1999-03-25 | 이시즈까 가즈오 | 압전소자 및 그 구동방법 |
JP3503386B2 (ja) * | 1996-01-26 | 2004-03-02 | セイコーエプソン株式会社 | インクジェット式記録ヘッド及びその製造方法 |
JPH111768A (ja) | 1997-06-11 | 1999-01-06 | Hitachi Metals Ltd | 強誘電体薄膜用ターゲット、その製造方法および強誘電体薄膜 |
KR100265379B1 (ko) * | 1997-11-05 | 2000-09-15 | 윤종용 | 지자계 편향 자동 보정 장치 |
JP2001138529A (ja) * | 1999-03-25 | 2001-05-22 | Seiko Epson Corp | 圧電体の製造方法 |
JP3202006B2 (ja) | 1999-04-15 | 2001-08-27 | 松下電器産業株式会社 | 圧電素子及びその製造方法並びにそれを用いたインクジェットヘッド及びその製造方法 |
JP3685318B2 (ja) * | 1999-11-09 | 2005-08-17 | セイコーエプソン株式会社 | 強誘電体薄膜素子の製造方法及び加熱処理装置 |
JP4051654B2 (ja) | 2000-02-08 | 2008-02-27 | セイコーエプソン株式会社 | 圧電体素子、インクジェット式記録ヘッド及びこれらの製造方法並びにインクジェットプリンタ |
-
2003
- 2003-02-19 CN CN038003368A patent/CN1514808B/zh not_active Expired - Lifetime
- 2003-02-19 WO PCT/JP2003/001826 patent/WO2003070641A1/ja active Application Filing
- 2003-02-19 KR KR20037013133A patent/KR100572916B1/ko active IP Right Grant
- 2003-02-19 JP JP2003569559A patent/JP4428509B2/ja not_active Expired - Fee Related
- 2003-02-19 US US10/478,567 patent/US7048360B2/en not_active Expired - Lifetime
- 2003-02-19 AU AU2003211331A patent/AU2003211331A1/en not_active Abandoned
- 2003-02-19 EP EP20030706974 patent/EP1452490B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO2003070641A1 (fr) | 2003-08-28 |
EP1452490B1 (en) | 2011-10-26 |
US7048360B2 (en) | 2006-05-23 |
KR20040020050A (ko) | 2004-03-06 |
JP4428509B2 (ja) | 2010-03-10 |
EP1452490A1 (en) | 2004-09-01 |
CN1514808A (zh) | 2004-07-21 |
EP1452490A4 (en) | 2009-09-23 |
US20040189751A1 (en) | 2004-09-30 |
JPWO2003070641A1 (ja) | 2005-06-09 |
CN1514808B (zh) | 2010-10-06 |
AU2003211331A1 (en) | 2003-09-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100572916B1 (ko) | 압전체 및 그 제조방법, 그리고 이 압전체를 구비한 압전소자, 잉크젯헤드 및 잉크젯방식 기록장치 | |
JP5865410B2 (ja) | 圧電素子、圧電アクチュエータおよびインクジェット式記録ヘッド | |
JP4424332B2 (ja) | 圧電体薄膜素子の製造方法 | |
EP1726050B1 (en) | Piezoelectric thin film, method of manufacturing piezoelectric thin film, piezoelectric element, and ink jet recording head | |
JP5188076B2 (ja) | 圧電素子及びその製造方法、電子デバイス、インクジェット装置 | |
JP5019020B2 (ja) | 誘電体膜の製造方法及び圧電体素子の製造方法並びに液体噴射ヘッドの製造方法 | |
JP5245107B2 (ja) | 圧電素子、圧電アクチュエータ、インクジェット式記録ヘッド | |
WO2016084365A1 (ja) | 圧電体膜及びそれを備えた圧電素子、及び液体吐出装置 | |
JP2009062564A (ja) | ペロブスカイト型酸化物、強誘電体膜とその製造方法、強誘電体素子、及び液体吐出装置 | |
JP2007250626A (ja) | 圧電素子の製造方法、アクチュエータ装置の製造方法、液体噴射ヘッドの製造方法、液体噴射装置の製造方法および圧電素子 | |
JP2009064859A (ja) | ペロブスカイト型酸化物、強誘電体膜とその製造方法、強誘電体素子、及び液体吐出装置 | |
JP5370346B2 (ja) | 圧電体素子およびインクジェット式記録ヘッド | |
JP4875827B2 (ja) | 圧電薄膜及びその製造方法、並びにその圧電薄膜を備えた圧電素子、並びにその圧電素子を用いたインクジェットヘッド、並びにそのインクジェットヘッドを備えたインクジェット式記録装置 | |
JP5541452B2 (ja) | 液滴噴射ヘッドおよびその製造方法、ならびに液滴噴射装置 | |
JP2008305821A (ja) | 圧電体薄膜素子、圧電体薄膜素子の製造方法、インクジェットヘッド、およびインクジェット式記録装置 | |
JP2003118104A (ja) | 強誘電体膜形成用スパッタリングターゲット、それを用いた強誘電体膜、強誘電体素子およびそれを用いたアクチュエータ、インクジェットヘッドならびにインクジェット記録装置 | |
JPWO2016031134A1 (ja) | 圧電体膜とその製造方法、圧電素子、及び液体吐出装置 | |
JP4721507B2 (ja) | 圧電磁器組成物及びこれを用いたインクジェット記録ヘッド | |
JP4901165B2 (ja) | 積層圧電体 | |
JP2006144090A (ja) | スパッタリング方法、スパッタリング装置、圧電素子の製造方法及び液体噴射ヘッド | |
JP2019079948A (ja) | 圧電薄膜、圧電薄膜素子、圧電アクチュエータ、圧電センサ、ヘッドアセンブリ、ヘッドスタックアセンブリ、ハードディスクドライブ、プリンタヘッド、及びインクジェットプリンタ装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130318 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20140320 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20160318 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20170302 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20180316 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20190319 Year of fee payment: 14 |