KR100550170B1 - 반도체 장치 및 반도체 장치의 제조 방법 - Google Patents
반도체 장치 및 반도체 장치의 제조 방법 Download PDFInfo
- Publication number
- KR100550170B1 KR100550170B1 KR1020030058644A KR20030058644A KR100550170B1 KR 100550170 B1 KR100550170 B1 KR 100550170B1 KR 1020030058644 A KR1020030058644 A KR 1020030058644A KR 20030058644 A KR20030058644 A KR 20030058644A KR 100550170 B1 KR100550170 B1 KR 100550170B1
- Authority
- KR
- South Korea
- Prior art keywords
- gate electrode
- insulating film
- film
- insulating layer
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 title description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 44
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 35
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 41
- 239000007772 electrode material Substances 0.000 claims description 29
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 11
- 239000012298 atmosphere Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 238000000605 extraction Methods 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 abstract description 14
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract description 14
- 230000015572 biosynthetic process Effects 0.000 abstract description 9
- 239000010408 film Substances 0.000 description 171
- 230000003647 oxidation Effects 0.000 description 32
- 238000007254 oxidation reaction Methods 0.000 description 32
- 238000010893 electron trap Methods 0.000 description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 229920005591 polysilicon Polymers 0.000 description 14
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 9
- 230000005684 electric field Effects 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- 238000002955 isolation Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002245727A JP2004087720A (ja) | 2002-08-26 | 2002-08-26 | 半導体装置および半導体装置の製造方法 |
| JPJP-P-2002-00245727 | 2002-08-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20040018954A KR20040018954A (ko) | 2004-03-04 |
| KR100550170B1 true KR100550170B1 (ko) | 2006-02-10 |
Family
ID=31884682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020030058644A KR100550170B1 (ko) | 2002-08-26 | 2003-08-25 | 반도체 장치 및 반도체 장치의 제조 방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6803622B2 (ja) |
| JP (1) | JP2004087720A (ja) |
| KR (1) | KR100550170B1 (ja) |
| CN (1) | CN1262014C (ja) |
| TW (1) | TWI228766B (ja) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4285184B2 (ja) * | 2003-10-14 | 2009-06-24 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| KR100587670B1 (ko) * | 2004-01-08 | 2006-06-08 | 삼성전자주식회사 | 비휘발성 메모리 셀의 유전막 형성방법 |
| KR100583609B1 (ko) * | 2004-07-05 | 2006-05-26 | 삼성전자주식회사 | 반도체 장치의 게이트 구조물 제조방법 및 이를 이용한불휘발성 메모리 장치의 셀 게이트 구조물 제조방법 |
| JP4868864B2 (ja) * | 2006-01-31 | 2012-02-01 | 株式会社東芝 | 半導体装置の製造方法 |
| US7906804B2 (en) * | 2006-07-19 | 2011-03-15 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and manufacturing method thereof |
| KR101042646B1 (ko) * | 2007-08-27 | 2011-06-20 | (주)연우 | 토출유닛 및 이를 구비한 디스펜서 |
| TW201039441A (en) * | 2009-04-24 | 2010-11-01 | Inotera Memories Inc | Transistor structure with high reliability includes a substrate unit and method for manufacturing the same |
| JP6095951B2 (ja) * | 2012-11-09 | 2017-03-15 | エスケーハイニックス株式会社ＳＫ ｈｙｎｉｘ Ｉｎｃ． | 半導体装置及びその製造方法 |
| US10050131B2 (en) * | 2015-12-10 | 2018-08-14 | Microchip Technology Incorporated | Method of forming a polysilicon sidewall oxide region in a memory cell |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5716862A (en) * | 1993-05-26 | 1998-02-10 | Micron Technology, Inc. | High performance PMOSFET using split-polysilicon CMOS process incorporating advanced stacked capacitior cells for fabricating multi-megabit DRAMS |
| JPH0917890A (ja) | 1995-06-27 | 1997-01-17 | Toshiba Corp | 不揮発性半導体記憶装置の製造方法 |
| JPH0917891A (ja) | 1995-06-27 | 1997-01-17 | Toshiba Corp | 不揮発性半導体記憶素子及び不揮発性半導体記憶装置 |
| JPH11154711A (ja) * | 1997-11-20 | 1999-06-08 | Toshiba Corp | 半導体装置の製造方法 |
| JP2002231822A (ja) * | 2001-01-31 | 2002-08-16 | Mitsubishi Electric Corp | 半導体装置の製造方法および半導体装置 |
| JP2003017595A (ja) * | 2001-06-29 | 2003-01-17 | Toshiba Corp | 半導体装置 |
| US6798038B2 (en) * | 2001-09-20 | 2004-09-28 | Kabushiki Kaisha Toshiba | Manufacturing method of semiconductor device with filling insulating film into trench |
| TWI248159B (en) * | 2002-01-25 | 2006-01-21 | Nanya Technology Corp | Manufacturing method for shallow trench isolation with high aspect ratio |
-
2002
- 2002-08-26 JP JP2002245727A patent/JP2004087720A/ja active Pending
- 2002-10-22 US US10/274,871 patent/US6803622B2/en not_active Expired - Lifetime
-
2003
- 2003-08-18 TW TW092122622A patent/TWI228766B/zh not_active IP Right Cessation
- 2003-08-25 KR KR1020030058644A patent/KR100550170B1/ko active IP Right Grant
- 2003-08-26 CN CNB031559123A patent/CN1262014C/zh not_active Expired - Fee Related
-
2004
- 2004-09-08 US US10/935,179 patent/US20050029576A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| TW200414338A (en) | 2004-08-01 |
| CN1489215A (zh) | 2004-04-14 |
| US20040036107A1 (en) | 2004-02-26 |
| CN1262014C (zh) | 2006-06-28 |
| KR20040018954A (ko) | 2004-03-04 |
| US6803622B2 (en) | 2004-10-12 |
| US20050029576A1 (en) | 2005-02-10 |
| JP2004087720A (ja) | 2004-03-18 |
| TWI228766B (en) | 2005-03-01 |
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