KR100542171B1 - 블루밍방지구조를구비한고체촬상소자의구동방법 - Google Patents

블루밍방지구조를구비한고체촬상소자의구동방법 Download PDF

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Publication number
KR100542171B1
KR100542171B1 KR1019980007062A KR19980007062A KR100542171B1 KR 100542171 B1 KR100542171 B1 KR 100542171B1 KR 1019980007062 A KR1019980007062 A KR 1019980007062A KR 19980007062 A KR19980007062 A KR 19980007062A KR 100542171 B1 KR100542171 B1 KR 100542171B1
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South Korea
Prior art keywords
voltage
pixel portion
level
gate
pixel
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Expired - Lifetime
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KR1019980007062A
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English (en)
Korean (ko)
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KR19980079872A (ko
Inventor
료지 스즈끼
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소니 가부시끼 가이샤
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/623—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by evacuation via the output or reset lines
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/622—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1019980007062A 1997-03-04 1998-03-04 블루밍방지구조를구비한고체촬상소자의구동방법 Expired - Lifetime KR100542171B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP04897897A JP3915161B2 (ja) 1997-03-04 1997-03-04 ブルーミング防止構造を備えた固体撮像素子のダイナミックレンジ拡大方法とその固体撮像素子
JP97-048978 1997-03-04

Publications (2)

Publication Number Publication Date
KR19980079872A KR19980079872A (ko) 1998-11-25
KR100542171B1 true KR100542171B1 (ko) 2006-03-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980007062A Expired - Lifetime KR100542171B1 (ko) 1997-03-04 1998-03-04 블루밍방지구조를구비한고체촬상소자의구동방법

Country Status (5)

Country Link
US (1) US6002123A (enExample)
EP (1) EP0863663B1 (enExample)
JP (1) JP3915161B2 (enExample)
KR (1) KR100542171B1 (enExample)
DE (1) DE69841188D1 (enExample)

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JP3871439B2 (ja) * 1998-06-05 2007-01-24 松下電器産業株式会社 固体撮像装置およびその駆動方法
JP4200545B2 (ja) 1998-06-08 2008-12-24 ソニー株式会社 固体撮像素子およびその駆動方法、並びにカメラシステム
JP3657780B2 (ja) * 1998-06-30 2005-06-08 株式会社東芝 撮像装置
US6587146B1 (en) * 1998-11-20 2003-07-01 Eastman Kodak Company Three transistor active pixel sensor architecture with correlated double sampling
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US6965408B2 (en) * 2000-02-28 2005-11-15 Canon Kabushiki Kaisha Solid-state image pickup device having a photoelectric conversion unit and a punch-through current suppression circuit
JP3664939B2 (ja) 2000-04-14 2005-06-29 富士通株式会社 Ｃｍｏｓイメージセンサ及びその製造方法
KR100364605B1 (ko) * 2000-07-19 2002-12-16 (주) 픽셀플러스 넓은 동작 범위를 가지는 이미지 센서 픽셀
US7045753B1 (en) 2000-08-09 2006-05-16 Dalsa, Inc. Five transistor CMOS pixel
US6847070B2 (en) * 2000-08-09 2005-01-25 Dalsa, Inc. Five transistor CMOS pixel
US6566697B1 (en) 2000-11-28 2003-05-20 Dalsa, Inc. Pinned photodiode five transistor pixel
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JP3724374B2 (ja) * 2001-01-15 2005-12-07 ソニー株式会社 固体撮像装置及びその駆動方法
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KR20040029951A (ko) * 2001-08-24 2004-04-08 다이얼로그 세미컨덕터 게엠베하 완전 집적된 고체 상태 촬상기 및 카메라 회로
US7298406B2 (en) * 2002-01-16 2007-11-20 Micron Technology, Inc. Ground referenced pixel reset
US6909459B2 (en) 2002-08-21 2005-06-21 Alpha Innotech Corporation Method of and apparatus for extending signal ranges of digital images
JP3951879B2 (ja) 2002-10-04 2007-08-01 ソニー株式会社 固体撮像素子及びその駆動方法
US6888573B2 (en) * 2002-10-31 2005-05-03 Motorola, Inc. Digital pixel sensor with anti-blooming control
JP4529027B2 (ja) * 2004-09-06 2010-08-25 ルネサスエレクトロニクス株式会社 固体撮像装置
KR100621561B1 (ko) 2004-11-05 2006-09-19 삼성전자주식회사 Ｃｍｏｓ 이미지 센서 및 그 구동 방법
JP4459064B2 (ja) * 2005-01-14 2010-04-28 キヤノン株式会社 固体撮像装置、その制御方法及びカメラ
US7728896B2 (en) * 2005-07-12 2010-06-01 Micron Technology, Inc. Dual conversion gain gate and capacitor and HDR combination
US7829832B2 (en) * 2005-08-30 2010-11-09 Aptina Imaging Corporation Method for operating a pixel cell using multiple pulses to a transistor transfer gate
JP5051994B2 (ja) * 2005-09-26 2012-10-17 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および撮像装置
JP4797558B2 (ja) * 2005-10-17 2011-10-19 ソニー株式会社 固体撮像素子とその駆動方法、及びカメラモジュール
JP4828914B2 (ja) 2005-10-28 2011-11-30 株式会社東芝 固体撮像装置およびその駆動方法
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JP4548425B2 (ja) * 2007-01-09 2010-09-22 ソニー株式会社 固体撮像素子及びその駆動方法
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JP5054183B2 (ja) * 2010-07-30 2012-10-24 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 固体撮像装置
KR101475285B1 (ko) * 2010-08-12 2014-12-23 연세대학교 산학협력단 씨모스 이미지 센서 및 그것의 동작 방법
JP5635937B2 (ja) * 2011-03-31 2014-12-03 本田技研工業株式会社 固体撮像装置
JP5635938B2 (ja) 2011-03-31 2014-12-03 本田技研工業株式会社 固体撮像装置
JP5829036B2 (ja) 2011-03-31 2015-12-09 本田技研工業株式会社 単位画素の信号加算方法
KR101251744B1 (ko) * 2011-04-13 2013-04-05 엘지이노텍 주식회사 Ｗｄｒ 픽셀 어레이, 이를 포함하는 ｗｄｒ 이미징 장치 및 그 구동방법
KR101241553B1 (ko) * 2011-04-13 2013-03-11 엘지이노텍 주식회사 Ｗｄｒ 픽셀 어레이, 이를 포함하는 ｗｄｒ 이미징 장치 및 그 구동방법
EP2874388B1 (en) * 2013-11-15 2019-05-15 Sony Depthsensing Solutions Method for avoiding pixel saturation
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JP6987603B2 (ja) * 2017-10-26 2022-01-05 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の駆動方法、および電子機器
JP2021060275A (ja) * 2019-10-07 2021-04-15 ソニーセミコンダクタソリューションズ株式会社 受光素子及び測距装置
CN114731376A (zh) * 2019-12-02 2022-07-08 索尼半导体解决方案公司 固体摄像装置和电子设备

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Also Published As

Publication number Publication date
EP0863663B1 (en) 2009-09-30
KR19980079872A (ko) 1998-11-25
JP3915161B2 (ja) 2007-05-16
EP0863663A2 (en) 1998-09-09
DE69841188D1 (de) 2009-11-12
JPH10248035A (ja) 1998-09-14
EP0863663A3 (en) 1999-10-27
US6002123A (en) 1999-12-14

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