KR100540266B1 - 비휘발성 수동 매트릭스 디바이스 및 그 독출 방법 - Google Patents

비휘발성 수동 매트릭스 디바이스 및 그 독출 방법 Download PDF

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Publication number
KR100540266B1
KR100540266B1 KR1020037002558A KR20037002558A KR100540266B1 KR 100540266 B1 KR100540266 B1 KR 100540266B1 KR 1020037002558 A KR1020037002558 A KR 1020037002558A KR 20037002558 A KR20037002558 A KR 20037002558A KR 100540266 B1 KR100540266 B1 KR 100540266B1
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South Korea
Prior art keywords
segment
memory
memory device
passive matrix
bit lines
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KR1020037002558A
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English (en)
Korean (ko)
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KR20030059110A (ko
Inventor
마이클 톰슨
리차드 워막
괴란 구스타프손
요한 칼손
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띤 필름 일렉트로닉스 에이에스에이
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Read Only Memory (AREA)
  • Investigating Or Analysing Biological Materials (AREA)
  • Peptides Or Proteins (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Magnetic Record Carriers (AREA)
KR1020037002558A 2000-08-24 2001-08-24 비휘발성 수동 매트릭스 디바이스 및 그 독출 방법 Expired - Fee Related KR100540266B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NO20004236 2000-08-24
NO20004236A NO20004236L (no) 2000-08-24 2000-08-24 Ikke-flyktig passiv matriseinnretning og fremgangsmåte for utlesing av samme
PCT/NO2001/000348 WO2002025665A2 (en) 2000-08-24 2001-08-24 Non-volatile passive matrix and method for readout of the same

Publications (2)

Publication Number Publication Date
KR20030059110A KR20030059110A (ko) 2003-07-07
KR100540266B1 true KR100540266B1 (ko) 2006-01-10

Family

ID=19911499

Family Applications (1)

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KR1020037002558A Expired - Fee Related KR100540266B1 (ko) 2000-08-24 2001-08-24 비휘발성 수동 매트릭스 디바이스 및 그 독출 방법

Country Status (14)

Country Link
US (1) US20030137865A1 (https=)
EP (1) EP1316090B1 (https=)
JP (1) JP3848620B2 (https=)
KR (1) KR100540266B1 (https=)
CN (1) CN100530420C (https=)
AT (1) ATE290711T1 (https=)
AU (2) AU2002223159B2 (https=)
CA (1) CA2420378C (https=)
DE (1) DE60109307T2 (https=)
DK (1) DK1316090T3 (https=)
ES (1) ES2238053T3 (https=)
NO (1) NO20004236L (https=)
RU (1) RU2245584C2 (https=)
WO (1) WO2002025665A2 (https=)

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KR20200059130A (ko) * 2018-11-20 2020-05-28 삼성전자주식회사 메모리 회로, 반도체 장치 및 모바일 디바이스

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US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
NO314524B1 (no) * 2001-11-30 2003-03-31 Thin Film Electronics Asa Fremgangsmåte til lesing av celler i en passiv matriseadresserbar innretning, samt innretning for utförelse av fremgangsmåten
US6996652B1 (en) * 2002-09-19 2006-02-07 Inapac Technology, Inc. High-speed segmented data bus architecture
NO324607B1 (no) * 2003-11-24 2007-11-26 Thin Film Electronics Asa Fremgangsmate for a betjene et datalagringsapparat som benytter passiv matriseadressering
KR100576484B1 (ko) * 2003-12-09 2006-05-10 주식회사 하이닉스반도체 차동 데이터를 가지는 불휘발성 강유전체 메모리 장치
NO324029B1 (no) * 2004-09-23 2007-07-30 Thin Film Electronics Asa Lesemetode og deteksjonsanordning
CN100466036C (zh) * 2005-06-30 2009-03-04 精工爱普生株式会社 显示装置及电子设备
TWI260643B (en) 2005-12-30 2006-08-21 Ind Tech Res Inst Organic memory
CN1996486B (zh) * 2005-12-31 2010-11-03 财团法人工业技术研究院 数字感测电路
CN100524519C (zh) * 2005-12-31 2009-08-05 财团法人工业技术研究院 有机存储器
CN1996495B (zh) * 2005-12-31 2010-11-03 财团法人工业技术研究院 有机存储器之位单元
ES2301344B1 (es) * 2006-03-14 2009-05-01 Universidad De Zaragoza Sistema de comunicaciones digitales para entornos residenciales, asistenciales, oficinas y similares.
EP1944763A1 (en) * 2007-01-12 2008-07-16 STMicroelectronics S.r.l. Reading circuit and method for data storage system
AU2014202349A1 (en) 2012-08-02 2014-05-22 Harnischfeger Technologies, Inc. Depth-related help functions for a wheel loader training simulator
US9574326B2 (en) 2012-08-02 2017-02-21 Harnischfeger Technologies, Inc. Depth-related help functions for a shovel training simulator
JP5714681B2 (ja) * 2013-10-25 2015-05-07 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
US9773553B1 (en) * 2016-08-19 2017-09-26 Micron Technology, Inc. Segmented memory and operation
DE102016012071A1 (de) 2016-10-10 2018-04-12 Kai-Uwe Demasius Matrix mit kapazitiver Steuerungsvorrichtung
WO2018069359A1 (de) 2016-10-10 2018-04-19 Demasius Kai Uwe Kapazitive matrixanordnung und verfahren zu deren ansteuerung
US11102437B2 (en) * 2018-11-20 2021-08-24 Samsung Electronics Co., Ltd. Memory circuit and semiconductor device
US12407532B2 (en) * 2020-02-18 2025-09-02 International Business Machines Corporation Gain cell memory based physically unclonable function
KR20210143612A (ko) * 2020-05-20 2021-11-29 삼성전자주식회사 비휘발성 메모리 및 비휘발성 메모리의 동작 방법
CN111696602A (zh) * 2020-05-22 2020-09-22 珠海拍字节信息科技有限公司 铁电存储器及其操作方法
US11309034B2 (en) * 2020-07-15 2022-04-19 Ferroelectric Memory Gmbh Memory cell arrangement and methods thereof
CN114093398A (zh) * 2021-11-26 2022-02-25 无锡拍字节科技有限公司 一种铁电存储器的位线布局及铁电存储器

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US4599709A (en) * 1984-02-17 1986-07-08 At&T Bell Laboratories Byte organized static memory
SU1378682A1 (ru) * 1986-05-18 1994-12-30 В.И. Овчаренко Матричный накопитель для постоянного запоминающего устройства
SU1596392A1 (ru) * 1987-10-23 1990-09-30 Предприятие П/Я Х-5737 Матричный накопитель и способ управлени записью, считыванием и стиранием информации в накопителе
DE68923573T2 (de) * 1988-03-31 1996-01-18 Sony Corp Eingangsschaltungen.
JP2982905B2 (ja) * 1989-10-02 1999-11-29 三菱電機株式会社 ダイナミック型半導体記憶装置
US5086412A (en) * 1990-11-21 1992-02-04 National Semiconductor Corporation Sense amplifier and method for ferroelectric memory
KR950011965B1 (ko) * 1992-02-19 1995-10-12 삼성전자주식회사 불휘발성 반도체 메모리 장치
TW231343B (https=) * 1992-03-17 1994-10-01 Hitachi Seisakusyo Kk
JPH0677434A (ja) * 1992-08-27 1994-03-18 Hitachi Ltd 半導体記憶装置
US5337414A (en) * 1992-09-22 1994-08-09 Unisys Corporation Mass data storage and retrieval system
US5424997A (en) * 1994-03-15 1995-06-13 National Semiconductor Corporation Non-volatile semiconductor memory having switching devices for segmentation of a memory page and a method thereof
US5567636A (en) * 1995-02-27 1996-10-22 Motorola Inc. Process for forming a nonvolatile random access memory array
US5574692A (en) * 1995-06-07 1996-11-12 Lsi Logic Corporation Memory testing apparatus for microelectronic integrated circuit
US5969380A (en) * 1996-06-07 1999-10-19 Micron Technology, Inc. Three dimensional ferroelectric memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200059130A (ko) * 2018-11-20 2020-05-28 삼성전자주식회사 메모리 회로, 반도체 장치 및 모바일 디바이스
KR102690973B1 (ko) * 2018-11-20 2024-08-01 삼성전자주식회사 메모리 회로, 반도체 장치 및 모바일 디바이스

Also Published As

Publication number Publication date
KR20030059110A (ko) 2003-07-07
DE60109307D1 (de) 2005-04-14
CN1471712A (zh) 2004-01-28
NO20004236D0 (no) 2000-08-24
WO2002025665A2 (en) 2002-03-28
US20030137865A1 (en) 2003-07-24
WO2002025665A3 (en) 2002-05-16
CA2420378A1 (en) 2002-03-28
ATE290711T1 (de) 2005-03-15
ES2238053T3 (es) 2005-08-16
EP1316090B1 (en) 2005-03-09
CN100530420C (zh) 2009-08-19
CA2420378C (en) 2006-05-09
JP3848620B2 (ja) 2006-11-22
DK1316090T3 (da) 2005-05-30
AU2315902A (en) 2002-04-02
DE60109307T2 (de) 2006-04-13
RU2245584C2 (ru) 2005-01-27
EP1316090A2 (en) 2003-06-04
NO20004236L (no) 2002-02-25
JP2004510283A (ja) 2004-04-02
AU2002223159B2 (en) 2005-04-14

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