KR100538021B1 - 전압발생회로 - Google Patents

전압발생회로 Download PDF

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Publication number
KR100538021B1
KR100538021B1 KR10-2004-0034658A KR20040034658A KR100538021B1 KR 100538021 B1 KR100538021 B1 KR 100538021B1 KR 20040034658 A KR20040034658 A KR 20040034658A KR 100538021 B1 KR100538021 B1 KR 100538021B1
Authority
KR
South Korea
Prior art keywords
voltage
node
level
vcc
control signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2004-0034658A
Other languages
English (en)
Korean (ko)
Other versions
KR20040100933A (ko
Inventor
도비타유이치
Original Assignee
미쓰비시덴키 가부시키가이샤
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Publication date
Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20040100933A publication Critical patent/KR20040100933A/ko
Application granted granted Critical
Publication of KR100538021B1 publication Critical patent/KR100538021B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
KR10-2004-0034658A 2003-05-19 2004-05-17 전압발생회로 Expired - Fee Related KR100538021B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00140079 2003-05-19
JP2003140079 2003-05-19
JPJP-P-2003-00419716 2003-12-17
JP2003419716A JP4393182B2 (ja) 2003-05-19 2003-12-17 電圧発生回路

Publications (2)

Publication Number Publication Date
KR20040100933A KR20040100933A (ko) 2004-12-02
KR100538021B1 true KR100538021B1 (ko) 2005-12-21

Family

ID=33455503

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2004-0034658A Expired - Fee Related KR100538021B1 (ko) 2003-05-19 2004-05-17 전압발생회로

Country Status (6)

Country Link
US (2) US20040232974A1 (https=)
JP (1) JP4393182B2 (https=)
KR (1) KR100538021B1 (https=)
CN (1) CN100414644C (https=)
DE (1) DE102004024612B4 (https=)
TW (1) TWI240276B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7586358B2 (en) 2006-07-05 2009-09-08 Samsung Electronics Co., Ltd. Level shifter and driving method

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3694793B2 (ja) * 2002-10-24 2005-09-14 松下電器産業株式会社 電圧発生回路、電圧発生装置及びこれを用いた半導体装置、並びにその駆動方法
US7317347B2 (en) * 2004-11-22 2008-01-08 Stmicroelectronics S.R.L. Charge pump circuit with reuse of accumulated electrical charge
US7248096B2 (en) * 2004-11-22 2007-07-24 Stmicroelectronics S.R.L. Charge pump circuit with dynamic biasing of pass transistors
JP4957913B2 (ja) 2005-11-17 2012-06-20 日本電気株式会社 半導体集積回路
US7443202B2 (en) * 2006-06-02 2008-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic apparatus having the same
JP4929999B2 (ja) * 2006-11-17 2012-05-09 セイコーエプソン株式会社 昇圧回路、その制御方法および電圧発生回路。
US7446596B1 (en) * 2007-05-25 2008-11-04 Atmel Corporation Low voltage charge pump
JP4969322B2 (ja) * 2007-06-01 2012-07-04 三菱電機株式会社 電圧発生回路およびそれを備える画像表示装置
US7808301B2 (en) * 2007-07-26 2010-10-05 Macronix International Co., Ltd. Multiple-stage charge pump circuit with charge recycle circuit
JP5142861B2 (ja) * 2008-07-09 2013-02-13 パナソニック株式会社 内部電圧発生回路
JP2011150482A (ja) * 2010-01-20 2011-08-04 Sanyo Electric Co Ltd 電源回路
KR101736453B1 (ko) 2011-01-05 2017-05-16 삼성전자주식회사 플래시 메모리 장치 및 그것의 워드라인 전압 발생 방법
KR101764125B1 (ko) * 2010-12-15 2017-08-02 삼성전자주식회사 음의 고전압 발생기 및 음의 고전압 발생기를 포함하는 비휘발성 메모리 장치
US8897073B2 (en) * 2012-09-14 2014-11-25 Freescale Semiconductor, Inc. NVM with charge pump and method therefor
JP6585833B2 (ja) * 2016-04-27 2019-10-02 東芝三菱電機産業システム株式会社 無停電電源装置
US10672453B2 (en) * 2017-12-22 2020-06-02 Nanya Technology Corporation Voltage system providing pump voltage for memory device and method for operating the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2820331B2 (ja) * 1991-06-21 1998-11-05 シャープ株式会社 チャージポンプ回路
KR950008453B1 (ko) * 1992-03-31 1995-07-31 삼성전자주식회사 내부전원전압 발생회로
JP2755047B2 (ja) * 1992-06-24 1998-05-20 日本電気株式会社 昇圧電位発生回路
DE19601369C1 (de) * 1996-01-16 1997-04-10 Siemens Ag Vorrichtung zur Spannungsvervielfachung, insb. verwendbar zur Erzeugung der Löschspannung für ein EEPROM
DE69733603D1 (de) * 1997-01-23 2005-07-28 St Microelectronics Srl NMOS, negative Ladungspumpe
JP3853513B2 (ja) * 1998-04-09 2006-12-06 エルピーダメモリ株式会社 ダイナミック型ｒａｍ
JP3476363B2 (ja) * 1998-06-05 2003-12-10 日本電気株式会社 バンドギャップ型基準電圧発生回路
JP3554497B2 (ja) * 1998-12-08 2004-08-18 シャープ株式会社 チャージポンプ回路
US6208196B1 (en) * 1999-03-02 2001-03-27 Maxim Integrated Products, Inc. Current mode charge pumps
US6501325B1 (en) * 2001-01-18 2002-12-31 Cypress Semiconductor Corp. Low voltage supply higher efficiency cross-coupled high voltage charge pumps
US6661682B2 (en) * 2001-02-16 2003-12-09 Imec (Interuniversitair Microelectronica Centrum) High voltage generating charge pump circuit
TW564434B (en) * 2002-02-22 2003-12-01 Ememory Technology Inc Charge pump circuit without body effects

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7586358B2 (en) 2006-07-05 2009-09-08 Samsung Electronics Co., Ltd. Level shifter and driving method

Also Published As

Publication number Publication date
US20040232974A1 (en) 2004-11-25
JP2005006489A (ja) 2005-01-06
JP4393182B2 (ja) 2010-01-06
TW200426834A (en) 2004-12-01
DE102004024612B4 (de) 2020-03-05
DE102004024612A1 (de) 2004-12-23
KR20040100933A (ko) 2004-12-02
US7365591B2 (en) 2008-04-29
CN1551236A (zh) 2004-12-01
CN100414644C (zh) 2008-08-27
US20060028266A1 (en) 2006-02-09
TWI240276B (en) 2005-09-21

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