KR100515782B1 - 산화세륨의 제조방법, 산화세륨연마제, 이것을 사용한기판의 연마방법 및 반도체장치의 제조방법 - Google Patents

산화세륨의 제조방법, 산화세륨연마제, 이것을 사용한기판의 연마방법 및 반도체장치의 제조방법 Download PDF

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Publication number
KR100515782B1
KR100515782B1 KR10-2001-7014923A KR20017014923A KR100515782B1 KR 100515782 B1 KR100515782 B1 KR 100515782B1 KR 20017014923 A KR20017014923 A KR 20017014923A KR 100515782 B1 KR100515782 B1 KR 100515782B1
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South Korea
Prior art keywords
cerium oxide
polishing
delete delete
abrasive
particles
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Expired - Lifetime
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KR10-2001-7014923A
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English (en)
Korean (ko)
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KR20020009619A (ko
Inventor
마츠자와준
스기모토아츠시
요시다마사토
히라이케이조우
아시자와토라노스케
오오츠키유우토
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히다치 가세고교 가부시끼가이샤
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Publication of KR20020009619A publication Critical patent/KR20020009619A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224—Oxides or hydroxides of lanthanides
    • C01F17/235—Cerium oxides or hydroxides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/60—Compounds characterised by their crystallite size
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/10—Solid density
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/14—Pore volume

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR10-2001-7014923A 1999-05-28 2000-05-26 산화세륨의 제조방법, 산화세륨연마제, 이것을 사용한기판의 연마방법 및 반도체장치의 제조방법 Expired - Lifetime KR100515782B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP15004999 1999-05-28
JPJP-P-1999-00150049 1999-05-28
JP24339899 1999-08-30
JPJP-P-1999-00243398 1999-08-30

Related Child Applications (1)

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KR1020050025110A Division KR100754349B1 (ko) 1999-05-28 2005-03-25 산화세륨연마제, 이것을 사용한 기판의 연마방법 및반도체장치의 제조방법

Publications (2)

Publication Number Publication Date
KR20020009619A KR20020009619A (ko) 2002-02-01
KR100515782B1 true KR100515782B1 (ko) 2005-09-23

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KR10-2001-7014923A Expired - Lifetime KR100515782B1 (ko) 1999-05-28 2000-05-26 산화세륨의 제조방법, 산화세륨연마제, 이것을 사용한기판의 연마방법 및 반도체장치의 제조방법
KR1020050025110A Expired - Lifetime KR100754349B1 (ko) 1999-05-28 2005-03-25 산화세륨연마제, 이것을 사용한 기판의 연마방법 및반도체장치의 제조방법

Family Applications After (1)

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Country Status (6)

Country Link
US (1) US6615499B1 (https=)
EP (4) EP2394960A3 (https=)
JP (2) JP4221903B2 (https=)
KR (2) KR100515782B1 (https=)
TW (1) TWI294408B (https=)
WO (1) WO2000073211A1 (https=)

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JP7123799B2 (ja) * 2016-09-16 2022-08-23 ニッタ・デュポン株式会社 研磨パッド
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Also Published As

Publication number Publication date
EP2394960A2 (en) 2011-12-14
EP2394961A2 (en) 2011-12-14
KR20050039789A (ko) 2005-04-29
EP1201607A4 (en) 2004-04-14
EP2394960A3 (en) 2013-03-13
JP2009051726A (ja) 2009-03-12
TWI294408B (https=) 2008-03-11
EP1201607B1 (en) 2014-07-30
KR100754349B1 (ko) 2007-08-31
WO2000073211A1 (en) 2000-12-07
US6615499B1 (en) 2003-09-09
EP1201607A1 (en) 2002-05-02
JP4221903B2 (ja) 2009-02-12
KR20020009619A (ko) 2002-02-01
EP2246301A1 (en) 2010-11-03
EP2394961A3 (en) 2012-10-24

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