JP4221903B2 - 酸化セリウムの製造方法、酸化セリウム研磨剤、これを用いた基板の研磨方法及び半導体装置の製造方法 - Google Patents

酸化セリウムの製造方法、酸化セリウム研磨剤、これを用いた基板の研磨方法及び半導体装置の製造方法 Download PDF

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Publication number
JP4221903B2
JP4221903B2 JP2000621286A JP2000621286A JP4221903B2 JP 4221903 B2 JP4221903 B2 JP 4221903B2 JP 2000621286 A JP2000621286 A JP 2000621286A JP 2000621286 A JP2000621286 A JP 2000621286A JP 4221903 B2 JP4221903 B2 JP 4221903B2
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JP
Japan
Prior art keywords
cerium oxide
polishing
particles
abrasive
insulating film
Prior art date
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Expired - Lifetime
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JP2000621286A
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English (en)
Japanese (ja)
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JPWO2000073211A1 (ja
Inventor
純 松沢
淳 杉本
誠人 吉田
圭三 平井
寅之助 芦沢
裕人 大槻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Resonac Corp
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Publication of JPWO2000073211A1 publication Critical patent/JPWO2000073211A1/ja
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Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224—Oxides or hydroxides of lanthanides
    • C01F17/235—Cerium oxides or hydroxides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/60—Compounds characterised by their crystallite size
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/10—Solid density
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/14—Pore volume

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2000621286A 1999-05-28 2000-05-26 酸化セリウムの製造方法、酸化セリウム研磨剤、これを用いた基板の研磨方法及び半導体装置の製造方法 Expired - Lifetime JP4221903B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP11-150049 1999-05-28
JP15004999 1999-05-28
JP24339899 1999-08-30
JP11-243398 1999-08-30
PCT/JP2000/003390 WO2000073211A1 (en) 1999-05-28 2000-05-26 Method for producing cerium oxide, cerium oxide abrasive, method for polishing substrate using the same and method for manufacturing semiconductor device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2005084911A Division JP4356636B2 (ja) 1999-05-28 2005-03-23 酸化セリウムの製造方法、酸化セリウム研磨剤、これを用いた基板の研磨方法及び半導体装置の製造方法
JP2008220110A Division JP2009051726A (ja) 1999-05-28 2008-08-28 酸化セリウムの製造方法、酸化セリウム研磨剤、これを用いた基板の研磨方法及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2000073211A1 JPWO2000073211A1 (ja) 2002-12-24
JP4221903B2 true JP4221903B2 (ja) 2009-02-12

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JP2000621286A Expired - Lifetime JP4221903B2 (ja) 1999-05-28 2000-05-26 酸化セリウムの製造方法、酸化セリウム研磨剤、これを用いた基板の研磨方法及び半導体装置の製造方法
JP2008220110A Withdrawn JP2009051726A (ja) 1999-05-28 2008-08-28 酸化セリウムの製造方法、酸化セリウム研磨剤、これを用いた基板の研磨方法及び半導体装置の製造方法

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JP2008220110A Withdrawn JP2009051726A (ja) 1999-05-28 2008-08-28 酸化セリウムの製造方法、酸化セリウム研磨剤、これを用いた基板の研磨方法及び半導体装置の製造方法

Country Status (6)

Country Link
US (1) US6615499B1 (https=)
EP (4) EP2394960A3 (https=)
JP (2) JP4221903B2 (https=)
KR (2) KR100515782B1 (https=)
TW (1) TWI294408B (https=)
WO (1) WO2000073211A1 (https=)

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JP5619515B2 (ja) * 2010-08-03 2014-11-05 昭和電工株式会社 酸化セリウム系研磨剤及びガラス製ハードディスク基板の製造方法
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CN119954198A (zh) * 2016-05-18 2025-05-09 罗地亚经营管理公司 氧化铈颗粒及其生产方法
JP7123799B2 (ja) * 2016-09-16 2022-08-23 ニッタ・デュポン株式会社 研磨パッド
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JP7074644B2 (ja) * 2018-10-31 2022-05-24 信越化学工業株式会社 合成石英ガラス基板の研磨用研磨粒子の製造方法、並びに合成石英ガラス基板の研磨方法
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WO2022071120A1 (ja) * 2020-09-30 2022-04-07 Ａｇｃ株式会社 酸化セリウム及び研磨剤
KR20250093486A (ko) * 2022-10-27 2025-06-24 가부시끼가이샤 레조낙 지립 및 그 선정 방법, 연마액, 복수액식 연마액, 연마 방법, 부품의 제조 방법, 및, 반도체 부품의 제조 방법
CN121511676A (zh) * 2023-08-25 2026-02-10 株式会社力森诺科 浆料及研磨方法

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EP2394960A2 (en) 2011-12-14
EP2394961A2 (en) 2011-12-14
KR20050039789A (ko) 2005-04-29
EP1201607A4 (en) 2004-04-14
EP2394960A3 (en) 2013-03-13
JP2009051726A (ja) 2009-03-12
TWI294408B (https=) 2008-03-11
EP1201607B1 (en) 2014-07-30
KR100754349B1 (ko) 2007-08-31
WO2000073211A1 (en) 2000-12-07
US6615499B1 (en) 2003-09-09
EP1201607A1 (en) 2002-05-02
KR20020009619A (ko) 2002-02-01
EP2246301A1 (en) 2010-11-03
KR100515782B1 (ko) 2005-09-23
EP2394961A3 (en) 2012-10-24

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