KR100489599B1 - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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Publication number
KR100489599B1
KR100489599B1 KR10-2002-0036178A KR20020036178A KR100489599B1 KR 100489599 B1 KR100489599 B1 KR 100489599B1 KR 20020036178 A KR20020036178 A KR 20020036178A KR 100489599 B1 KR100489599 B1 KR 100489599B1
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KR
South Korea
Prior art keywords
etching
semiconductor device
overetching
gas
insulating film
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR10-2002-0036178A
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English (en)
Korean (ko)
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KR20030040008A (ko
Inventor
신타니겐지
츠다무츠미
다니무라쥰지
마루야마다카히로
요시후쿠료이치
Original Assignee
미쓰비시덴키 가부시키가이샤
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Publication of KR20030040008A publication Critical patent/KR20030040008A/ko
Application granted granted Critical
Publication of KR100489599B1 publication Critical patent/KR100489599B1/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
KR10-2002-0036178A 2001-11-16 2002-06-27 반도체 장치의 제조 방법 Expired - Fee Related KR100489599B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00351652 2001-11-16
JP2001351652A JP3760843B2 (ja) 2001-11-16 2001-11-16 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20030040008A KR20030040008A (ko) 2003-05-22
KR100489599B1 true KR100489599B1 (ko) 2005-05-16

Family

ID=19163934

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-0036178A Expired - Fee Related KR100489599B1 (ko) 2001-11-16 2002-06-27 반도체 장치의 제조 방법

Country Status (4)

Country Link
US (1) US6651678B2 (enExample)
JP (1) JP3760843B2 (enExample)
KR (1) KR100489599B1 (enExample)
TW (1) TW541618B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230122198A (ko) 2022-02-14 2023-08-22 경남정보대학교 산학협력단 일회용 샤워타월 키트

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004134521A (ja) 2002-10-09 2004-04-30 Rohm Co Ltd 半導体装置の製造方法
US7208424B2 (en) * 2004-09-17 2007-04-24 Freescale Semiconductor, Inc. Method of forming a semiconductor device having a metal layer
JP4672318B2 (ja) * 2004-09-22 2011-04-20 東京エレクトロン株式会社 エッチング方法
JP2008010692A (ja) * 2006-06-30 2008-01-17 Hitachi High-Technologies Corp ドライエッチング方法
CN100461433C (zh) * 2007-01-04 2009-02-11 北京京东方光电科技有限公司 一种tft阵列结构及其制造方法
JP5500876B2 (ja) * 2009-06-08 2014-05-21 キヤノン株式会社 光電変換装置の製造方法
JP5633588B2 (ja) * 2013-02-25 2014-12-03 富士通セミコンダクター株式会社 半導体装置の製造方法
JP7220603B2 (ja) * 2019-03-20 2023-02-10 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置
WO2025204138A1 (ja) * 2024-03-25 2025-10-02 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990065807A (ko) * 1998-01-16 1999-08-05 로버트 에이치. 씨. 챠오. 식각 향상 방법
KR20010019642A (ko) * 1999-08-28 2001-03-15 윤종용 폴리실리콘 게이트의 식각 방법
US6277716B1 (en) * 1999-10-25 2001-08-21 Chartered Semiconductor Manufacturing Ltd. Method of reduce gate oxide damage by using a multi-step etch process with a predictable premature endpoint system
KR20020035992A (ko) * 2000-11-07 2002-05-16 박종섭 반도체장치의 제조방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06216069A (ja) * 1993-01-13 1994-08-05 Hitachi Ltd エッチング方法及び装置
JPH06232091A (ja) * 1993-02-03 1994-08-19 Nippon Telegr & Teleph Corp <Ntt> シリコン層の異方性加工方法
JP2822952B2 (ja) * 1995-08-30 1998-11-11 日本電気株式会社 半導体装置の製造方法
US6037266A (en) * 1998-09-28 2000-03-14 Taiwan Semiconductor Manufacturing Company Method for patterning a polysilicon gate with a thin gate oxide in a polysilicon etcher
US6387820B1 (en) * 2000-09-19 2002-05-14 Advanced Micro Devices, Inc. BC13/AR chemistry for metal overetching on a high density plasma etcher
US6559062B1 (en) * 2000-11-15 2003-05-06 Agere Systems, Inc. Method for avoiding notching in a semiconductor interconnect during a metal etching step
US6551941B2 (en) * 2001-02-22 2003-04-22 Applied Materials, Inc. Method of forming a notched silicon-containing gate structure
JP4498662B2 (ja) * 2001-06-15 2010-07-07 東京エレクトロン株式会社 ドライエッチング方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990065807A (ko) * 1998-01-16 1999-08-05 로버트 에이치. 씨. 챠오. 식각 향상 방법
KR20010019642A (ko) * 1999-08-28 2001-03-15 윤종용 폴리실리콘 게이트의 식각 방법
US6277716B1 (en) * 1999-10-25 2001-08-21 Chartered Semiconductor Manufacturing Ltd. Method of reduce gate oxide damage by using a multi-step etch process with a predictable premature endpoint system
KR20020035992A (ko) * 2000-11-07 2002-05-16 박종섭 반도체장치의 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230122198A (ko) 2022-02-14 2023-08-22 경남정보대학교 산학협력단 일회용 샤워타월 키트

Also Published As

Publication number Publication date
JP2003151954A (ja) 2003-05-23
KR20030040008A (ko) 2003-05-22
JP3760843B2 (ja) 2006-03-29
TW541618B (en) 2003-07-11
US20030096505A1 (en) 2003-05-22
US6651678B2 (en) 2003-11-25

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