KR100471704B1 - 기판의세정방법 - Google Patents

기판의세정방법 Download PDF

Info

Publication number
KR100471704B1
KR100471704B1 KR1019970704765A KR19970704765A KR100471704B1 KR 100471704 B1 KR100471704 B1 KR 100471704B1 KR 1019970704765 A KR1019970704765 A KR 1019970704765A KR 19970704765 A KR19970704765 A KR 19970704765A KR 100471704 B1 KR100471704 B1 KR 100471704B1
Authority
KR
South Korea
Prior art keywords
cleaning
hydrogen peroxide
ammonia
particles
hydrofluoric acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019970704765A
Other languages
English (en)
Korean (ko)
Other versions
KR19980701376A (ko
Inventor
미쓰시 이따노
다께히꼬 게주까
마꼬또 스야마
Original Assignee
다이낑 고오교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다이낑 고오교 가부시키가이샤 filed Critical 다이낑 고오교 가부시키가이샤
Publication of KR19980701376A publication Critical patent/KR19980701376A/ko
Application granted granted Critical
Publication of KR100471704B1 publication Critical patent/KR100471704B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Detergent Compositions (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • ing And Chemical Polishing (AREA)
KR1019970704765A 1995-01-13 1996-01-11 기판의세정방법 Expired - Fee Related KR100471704B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP7003883A JPH08195369A (ja) 1995-01-13 1995-01-13 基板の洗浄方法
JP3883/1995 1995-01-13
JP95-3883 1995-01-13

Publications (2)

Publication Number Publication Date
KR19980701376A KR19980701376A (ko) 1998-05-15
KR100471704B1 true KR100471704B1 (ko) 2005-04-14

Family

ID=11569590

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970704765A Expired - Fee Related KR100471704B1 (ko) 1995-01-13 1996-01-11 기판의세정방법

Country Status (6)

Country Link
EP (1) EP0805484A4 (enExample)
JP (1) JPH08195369A (enExample)
KR (1) KR100471704B1 (enExample)
CN (1) CN1168194A (enExample)
TW (1) TW312807B (enExample)
WO (1) WO1996021942A1 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997018582A1 (en) * 1995-11-15 1997-05-22 Daikin Industries, Ltd. Wafer-cleaning solution and process for the production thereof
US6165956A (en) * 1997-10-21 2000-12-26 Lam Research Corporation Methods and apparatus for cleaning semiconductor substrates after polishing of copper film
US6303551B1 (en) 1997-10-21 2001-10-16 Lam Research Corporation Cleaning solution and method for cleaning semiconductor substrates after polishing of cooper film
US6593282B1 (en) 1997-10-21 2003-07-15 Lam Research Corporation Cleaning solutions for semiconductor substrates after polishing of copper film
US6479443B1 (en) 1997-10-21 2002-11-12 Lam Research Corporation Cleaning solution and method for cleaning semiconductor substrates after polishing of copper film
EP0982765B1 (en) * 1998-08-28 2004-04-28 Mitsubishi Materials Silicon Corporation Cleaning method of semiconductor substrate
JP3003684B1 (ja) 1998-09-07 2000-01-31 日本電気株式会社 基板洗浄方法および基板洗浄液
US6277203B1 (en) 1998-09-29 2001-08-21 Lam Research Corporation Method and apparatus for cleaning low K dielectric and metal wafer surfaces
US6358847B1 (en) 1999-03-31 2002-03-19 Lam Research Corporation Method for enabling conventional wire bonding to copper-based bond pad features
JP3624809B2 (ja) * 2000-02-29 2005-03-02 昭和電工株式会社 洗浄剤組成物、洗浄方法及びその用途
JP2003083869A (ja) * 2001-09-10 2003-03-19 Japan Water Research Center クリプトスポリジウムパルバム疑似蛍光トレーサおよびその調製法
TWI276682B (en) * 2001-11-16 2007-03-21 Mitsubishi Chem Corp Substrate surface cleaning liquid mediums and cleaning method
JP4074814B2 (ja) * 2002-01-30 2008-04-16 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
AU2003257636A1 (en) * 2002-08-22 2004-03-11 Daikin Industries, Ltd. Removing solution
CN100353466C (zh) * 2004-06-21 2007-12-05 苏州双林电脑器件有限公司 聚焦电位器基片的清洗方法
CN100428419C (zh) * 2004-12-08 2008-10-22 中国电子科技集团公司第四十六研究所 一种砷化镓晶片清洗方法
JP4613744B2 (ja) * 2005-08-10 2011-01-19 株式会社Sumco シリコンウェーハの洗浄方法
US7479460B2 (en) 2005-08-23 2009-01-20 Asm America, Inc. Silicon surface preparation
DE102007030957A1 (de) * 2007-07-04 2009-01-08 Siltronic Ag Verfahren zum Reinigen einer Halbleiterscheibe mit einer Reinigungslösung
JP2010192673A (ja) * 2009-02-18 2010-09-02 Tokyo Electron Ltd 基板洗浄方法、基板洗浄装置、制御プログラム及びコンピュータ読取可能な記憶媒体
TWI494984B (zh) * 2010-07-21 2015-08-01 United Microelectronics Corp 半導體製程
JP2013053500A (ja) * 2011-08-31 2013-03-21 Serving Co Ltd フローリング等木質建材のリニューアル工法
CN102368468B (zh) * 2011-10-17 2013-09-25 浙江贝盛光伏股份有限公司 一种硅片预清洗工艺
JP2014057039A (ja) * 2012-08-10 2014-03-27 Fujifilm Corp 半導体基板製品の製造方法及びエッチング液
CN103894362A (zh) * 2014-01-10 2014-07-02 浙江晶科能源有限公司 一种镀膜返工片的清洗方法
JP6154860B2 (ja) * 2015-07-17 2017-06-28 野村マイクロ・サイエンス株式会社 洗浄用水素水の製造方法及び製造装置
CN110591832A (zh) * 2019-09-26 2019-12-20 嘉兴瑞智光能科技有限公司 一种高效环保无污染硅片清洗剂及其制备方法
CN113130301B (zh) * 2021-04-15 2023-09-22 通威太阳能（安徽）有限公司 一种解决单晶perc电池片碱抛el气流印的方法
CN115709204A (zh) * 2022-09-21 2023-02-24 有研国晶辉新材料有限公司 氮化硼坩埚的清洗方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5051134A (en) * 1990-01-26 1991-09-24 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe M.B.H. Process for the wet-chemical treatment of semiconductor surfaces
JPH0521412A (ja) * 1991-07-10 1993-01-29 Fujitsu Ltd 半導体基板の処理方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0353083A (ja) * 1989-07-20 1991-03-07 Morita Kagaku Kogyo Kk 半導体素子の金属汚染を防止する方法
JP3217116B2 (ja) * 1992-03-06 2001-10-09 日産化学工業株式会社 低表面張力洗浄用組成物
TW263531B (enExample) * 1992-03-11 1995-11-21 Mitsubishi Gas Chemical Co
JPH0641770A (ja) * 1992-07-27 1994-02-15 Daikin Ind Ltd シリコンウエハ表面の処理方法
JPH06177101A (ja) * 1992-12-03 1994-06-24 Mitsubishi Materials Corp 改良されたシリコンウェーハ洗浄液
JP3449492B2 (ja) * 1993-02-10 2003-09-22 三菱住友シリコン株式会社 ウェーハエッチングの前処理方法
WO1994027314A1 (en) * 1993-05-13 1994-11-24 Interuniversitair Microelektronica Centrum Method for semiconductor processing using mixtures of hf and carboxylic acid
JPH07216392A (ja) * 1994-01-26 1995-08-15 Daikin Ind Ltd 洗浄剤及び洗浄方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5051134A (en) * 1990-01-26 1991-09-24 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe M.B.H. Process for the wet-chemical treatment of semiconductor surfaces
JPH0521412A (ja) * 1991-07-10 1993-01-29 Fujitsu Ltd 半導体基板の処理方法

Also Published As

Publication number Publication date
CN1168194A (zh) 1997-12-17
JPH08195369A (ja) 1996-07-30
TW312807B (enExample) 1997-08-11
EP0805484A1 (en) 1997-11-05
WO1996021942A1 (en) 1996-07-18
KR19980701376A (ko) 1998-05-15
EP0805484A4 (en) 1998-04-01

Similar Documents

Publication Publication Date Title
KR100471704B1 (ko) 기판의세정방법
US6274059B1 (en) Method to remove metals in a scrubber
KR100681547B1 (ko) 신규 세정제와 이를 이용한 세정방법
KR100248113B1 (ko) 전자 표시 장치 및 기판용 세정 및 식각 조성물
KR100322392B1 (ko) 세정처리제
KR100813753B1 (ko) 세정방법
KR100867287B1 (ko) 세정제 조성물
US20020062841A1 (en) Method for cleaning semiconductor wafers with ozone-containing solvent
KR20030041092A (ko) 기판표면 세정액 및 세정방법
US5883060A (en) Cleaning compositions for wafers used in semiconductor devices
JP2000031071A (ja) 半導体製造装置およびこれを用いたエピタキシャルウェーハの製造方法
KR20010007593A (ko) 화학 기계적 연마 후 처리를 위해 침지를 이용하는 무브러시 다중 통과 실리콘 웨이퍼 세정 공정
US5964953A (en) Post-etching alkaline treatment process
JP2005154558A (ja) 洗浄剤
JPH10183185A (ja) 洗浄液、その配合決定方法ならびに製造方法、洗浄方法、および、半導体基板の製造方法
JPH0745600A (ja) 液中異物付着防止溶液とそれを用いたエッチング方法及び装置
JP2002151453A (ja) 精密基板の洗浄方法及び洗浄装置
JP3759789B2 (ja) 半導体装置の洗浄に使用される洗浄液及びこれを用いた洗浄方法
US6394106B1 (en) Cleaning solutions and methods for semiconductor wafers
JPH0684866A (ja) 異物付着防止方法
CN114038736A (zh) 用于半导体材料的清洗方法
JP2007214412A (ja) 半導体基板洗浄方法
JPH07153728A (ja) 温純水洗浄によるシリコンウエーハの表面処理方法
US20050092348A1 (en) Method for cleaning an integrated circuit device using an aqueous cleaning composition
JP2001250801A (ja) 半導体基板の洗浄方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20080122

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20090204

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20090204

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000