CN1168194A - 基片的洗涤方法 - Google Patents

基片的洗涤方法 Download PDF

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Publication number
CN1168194A
CN1168194A CN96191411A CN96191411A CN1168194A CN 1168194 A CN1168194 A CN 1168194A CN 96191411 A CN96191411 A CN 96191411A CN 96191411 A CN96191411 A CN 96191411A CN 1168194 A CN1168194 A CN 1168194A
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CN
China
Prior art keywords
particles
washing
hydrogen peroxide
hydrofluoric acid
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN96191411A
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English (en)
Chinese (zh)
Inventor
板野充司
毛健彦
陶山诚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daikin Industries Ltd
Original Assignee
Daikin Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daikin Industries Ltd filed Critical Daikin Industries Ltd
Publication of CN1168194A publication Critical patent/CN1168194A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Detergent Compositions (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • ing And Chemical Polishing (AREA)
CN96191411A 1995-01-13 1996-01-11 基片的洗涤方法 Pending CN1168194A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3883/95 1995-01-13
JP7003883A JPH08195369A (ja) 1995-01-13 1995-01-13 基板の洗浄方法

Publications (1)

Publication Number Publication Date
CN1168194A true CN1168194A (zh) 1997-12-17

Family

ID=11569590

Family Applications (1)

Application Number Title Priority Date Filing Date
CN96191411A Pending CN1168194A (zh) 1995-01-13 1996-01-11 基片的洗涤方法

Country Status (6)

Country Link
EP (1) EP0805484A4 (enExample)
JP (1) JPH08195369A (enExample)
KR (1) KR100471704B1 (enExample)
CN (1) CN1168194A (enExample)
TW (1) TW312807B (enExample)
WO (1) WO1996021942A1 (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6444583B2 (en) 1998-09-07 2002-09-03 Nec Corporation Substrate-cleaning method and substrate-cleaning solution
CN100353466C (zh) * 2004-06-21 2007-12-05 苏州双林电脑器件有限公司 聚焦电位器基片的清洗方法
CN100423190C (zh) * 2005-08-10 2008-10-01 株式会社上睦可 硅晶片的洗涤方法
CN100428419C (zh) * 2004-12-08 2008-10-22 中国电子科技集团公司第四十六研究所 一种砷化镓晶片清洗方法
CN102368468A (zh) * 2011-10-17 2012-03-07 浙江贝盛光伏股份有限公司 一种硅片预清洗工艺
CN103894362A (zh) * 2014-01-10 2014-07-02 浙江晶科能源有限公司 一种镀膜返工片的清洗方法
TWI494984B (zh) * 2010-07-21 2015-08-01 United Microelectronics Corp 半導體製程
CN106345327A (zh) * 2015-07-17 2017-01-25 野村微科学股份有限公司 洗涤用氢水的制造方法及制造装置
CN110591832A (zh) * 2019-09-26 2019-12-20 嘉兴瑞智光能科技有限公司 一种高效环保无污染硅片清洗剂及其制备方法
CN113130301A (zh) * 2021-04-15 2021-07-16 通威太阳能（安徽）有限公司 一种解决单晶perc电池片碱抛el气流印的方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997018582A1 (en) * 1995-11-15 1997-05-22 Daikin Industries, Ltd. Wafer-cleaning solution and process for the production thereof
US6303551B1 (en) 1997-10-21 2001-10-16 Lam Research Corporation Cleaning solution and method for cleaning semiconductor substrates after polishing of cooper film
US6479443B1 (en) 1997-10-21 2002-11-12 Lam Research Corporation Cleaning solution and method for cleaning semiconductor substrates after polishing of copper film
US6593282B1 (en) 1997-10-21 2003-07-15 Lam Research Corporation Cleaning solutions for semiconductor substrates after polishing of copper film
US6165956A (en) * 1997-10-21 2000-12-26 Lam Research Corporation Methods and apparatus for cleaning semiconductor substrates after polishing of copper film
EP0982765B1 (en) * 1998-08-28 2004-04-28 Mitsubishi Materials Silicon Corporation Cleaning method of semiconductor substrate
US6277203B1 (en) 1998-09-29 2001-08-21 Lam Research Corporation Method and apparatus for cleaning low K dielectric and metal wafer surfaces
US6358847B1 (en) 1999-03-31 2002-03-19 Lam Research Corporation Method for enabling conventional wire bonding to copper-based bond pad features
JP3624809B2 (ja) * 2000-02-29 2005-03-02 昭和電工株式会社 洗浄剤組成物、洗浄方法及びその用途
JP2003083869A (ja) * 2001-09-10 2003-03-19 Japan Water Research Center クリプトスポリジウムパルバム疑似蛍光トレーサおよびその調製法
TWI276682B (en) * 2001-11-16 2007-03-21 Mitsubishi Chem Corp Substrate surface cleaning liquid mediums and cleaning method
JP4074814B2 (ja) * 2002-01-30 2008-04-16 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
CN1678961B (zh) * 2002-08-22 2010-05-05 大金工业株式会社 剥离液
US7479460B2 (en) 2005-08-23 2009-01-20 Asm America, Inc. Silicon surface preparation
DE102007030957A1 (de) 2007-07-04 2009-01-08 Siltronic Ag Verfahren zum Reinigen einer Halbleiterscheibe mit einer Reinigungslösung
JP2010192673A (ja) * 2009-02-18 2010-09-02 Tokyo Electron Ltd 基板洗浄方法、基板洗浄装置、制御プログラム及びコンピュータ読取可能な記憶媒体
JP2013053500A (ja) * 2011-08-31 2013-03-21 Serving Co Ltd フローリング等木質建材のリニューアル工法
JP2014057039A (ja) * 2012-08-10 2014-03-27 Fujifilm Corp 半導体基板製品の製造方法及びエッチング液
CN115709204A (zh) * 2022-09-21 2023-02-24 有研国晶辉新材料有限公司 氮化硼坩埚的清洗方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0353083A (ja) * 1989-07-20 1991-03-07 Morita Kagaku Kogyo Kk 半導体素子の金属汚染を防止する方法
DE4002327A1 (de) * 1990-01-26 1991-08-01 Wacker Chemitronic Verfahren zur nasschemischen behandlung von halbleiteroberflaechen und loesung zu seiner durchfuehrung
JPH0521412A (ja) * 1991-07-10 1993-01-29 Fujitsu Ltd 半導体基板の処理方法
JP3217116B2 (ja) * 1992-03-06 2001-10-09 日産化学工業株式会社 低表面張力洗浄用組成物
TW263531B (enExample) * 1992-03-11 1995-11-21 Mitsubishi Gas Chemical Co
JPH0641770A (ja) * 1992-07-27 1994-02-15 Daikin Ind Ltd シリコンウエハ表面の処理方法
JPH06177101A (ja) * 1992-12-03 1994-06-24 Mitsubishi Materials Corp 改良されたシリコンウェーハ洗浄液
JP3449492B2 (ja) * 1993-02-10 2003-09-22 三菱住友シリコン株式会社 ウェーハエッチングの前処理方法
WO1994027314A1 (en) * 1993-05-13 1994-11-24 Interuniversitair Microelektronica Centrum Method for semiconductor processing using mixtures of hf and carboxylic acid
JPH07216392A (ja) * 1994-01-26 1995-08-15 Daikin Ind Ltd 洗浄剤及び洗浄方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6444583B2 (en) 1998-09-07 2002-09-03 Nec Corporation Substrate-cleaning method and substrate-cleaning solution
CN100353466C (zh) * 2004-06-21 2007-12-05 苏州双林电脑器件有限公司 聚焦电位器基片的清洗方法
CN100428419C (zh) * 2004-12-08 2008-10-22 中国电子科技集团公司第四十六研究所 一种砷化镓晶片清洗方法
CN100423190C (zh) * 2005-08-10 2008-10-01 株式会社上睦可 硅晶片的洗涤方法
TWI494984B (zh) * 2010-07-21 2015-08-01 United Microelectronics Corp 半導體製程
CN102368468A (zh) * 2011-10-17 2012-03-07 浙江贝盛光伏股份有限公司 一种硅片预清洗工艺
CN103894362A (zh) * 2014-01-10 2014-07-02 浙江晶科能源有限公司 一种镀膜返工片的清洗方法
CN106345327A (zh) * 2015-07-17 2017-01-25 野村微科学股份有限公司 洗涤用氢水的制造方法及制造装置
CN110591832A (zh) * 2019-09-26 2019-12-20 嘉兴瑞智光能科技有限公司 一种高效环保无污染硅片清洗剂及其制备方法
CN113130301A (zh) * 2021-04-15 2021-07-16 通威太阳能（安徽）有限公司 一种解决单晶perc电池片碱抛el气流印的方法
CN113130301B (zh) * 2021-04-15 2023-09-22 通威太阳能（安徽）有限公司 一种解决单晶perc电池片碱抛el气流印的方法

Also Published As

Publication number Publication date
KR19980701376A (ko) 1998-05-15
TW312807B (enExample) 1997-08-11
KR100471704B1 (ko) 2005-04-14
EP0805484A4 (en) 1998-04-01
WO1996021942A1 (en) 1996-07-18
JPH08195369A (ja) 1996-07-30
EP0805484A1 (en) 1997-11-05

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