JP2005154558A - 洗浄剤 - Google Patents
洗浄剤 Download PDFInfo
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- JP2005154558A JP2005154558A JP2003394271A JP2003394271A JP2005154558A JP 2005154558 A JP2005154558 A JP 2005154558A JP 2003394271 A JP2003394271 A JP 2003394271A JP 2003394271 A JP2003394271 A JP 2003394271A JP 2005154558 A JP2005154558 A JP 2005154558A
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- cleaning
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- 239000003599 detergent Substances 0.000 title claims abstract description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 74
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 41
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 33
- 239000002245 particle Substances 0.000 claims abstract description 30
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 20
- 150000001412 amines Chemical class 0.000 claims abstract description 13
- 239000012535 impurity Substances 0.000 claims abstract description 13
- 239000007864 aqueous solution Substances 0.000 claims abstract description 8
- 239000012459 cleaning agent Substances 0.000 claims description 45
- 238000004140 cleaning Methods 0.000 claims description 36
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000004094 surface-active agent Substances 0.000 claims description 16
- 239000002738 chelating agent Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000243 solution Substances 0.000 abstract description 14
- 239000007788 liquid Substances 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 47
- 235000011007 phosphoric acid Nutrition 0.000 description 33
- 239000000126 substance Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 10
- 229910021645 metal ion Inorganic materials 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 239000007921 spray Substances 0.000 description 8
- 239000012530 fluid Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 239000002253 acid Substances 0.000 description 6
- 150000003863 ammonium salts Chemical class 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 238000005406 washing Methods 0.000 description 6
- 239000004254 Ammonium phosphate Substances 0.000 description 5
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 5
- 235000019289 ammonium phosphates Nutrition 0.000 description 5
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000178 monomer Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000003945 anionic surfactant Substances 0.000 description 3
- -1 as described above Chemical class 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 2
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 2
- GRUVVLWKPGIYEG-UHFFFAOYSA-N 2-[2-[carboxymethyl-[(2-hydroxyphenyl)methyl]amino]ethyl-[(2-hydroxyphenyl)methyl]amino]acetic acid Chemical compound C=1C=CC=C(O)C=1CN(CC(=O)O)CCN(CC(O)=O)CC1=CC=CC=C1O GRUVVLWKPGIYEG-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- UEZVMMHDMIWARA-UHFFFAOYSA-N Metaphosphoric acid Chemical compound OP(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 229960003330 pentetic acid Drugs 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 229920000137 polyphosphoric acid Polymers 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- 238000004876 x-ray fluorescence Methods 0.000 description 2
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 1
- MCTWTZJPVLRJOU-UHFFFAOYSA-N 1-methyl-1H-imidazole Chemical compound CN1C=CN=C1 MCTWTZJPVLRJOU-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- WCZVRQVCBWGZOI-UHFFFAOYSA-N N1=CC=NC=C1.CNC=1C(=CC=CC1)C Chemical compound N1=CC=NC=C1.CNC=1C(=CC=CC1)C WCZVRQVCBWGZOI-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 229910008812 WSi Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- ZRIUUUJAJJNDSS-UHFFFAOYSA-N ammonium phosphates Chemical class [NH4+].[NH4+].[NH4+].[O-]P([O-])([O-])=O ZRIUUUJAJJNDSS-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002338 electrophoretic light scattering Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229940102253 isopropanolamine Drugs 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 125000005702 oxyalkylene group Chemical group 0.000 description 1
- 150000003014 phosphoric acid esters Chemical class 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 150000004992 toluidines Chemical class 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
【解決手段】 リン酸、フッ化水素酸、アンモニアおよび/またはアミンを含有し、pHが2〜12の範囲の水溶液であり、リン酸を0.5〜25質量%、アンモニアおよび/またはアミンを0.1〜10質量%、フッ化水素酸を5×10-3〜5.0質量%含有する洗浄剤とした。
【選択図】 なし
Description
1) ある汚染種を除去する工程で他の汚染種が再付着すること、
2) SC−1で洗浄後、水洗工程を経てSC−2で洗浄するなどの工程を経るため、洗浄の工程数が多くなること、
3) ウエーハの300mm化に伴い、洗浄装置が大型化すること、
4) 過酸化水素の含有量が比較的多いため、W等、過酸化水素に対しダメージの大きい金属には使用できないこと、
5) 工程数が多いことなどもあって、洗浄装置の枚葉化におけるスループットに対応できないこと、
6) 加温処理であるため、枚葉処理において面内バラツキを生じること、
等が挙げられる。
したがって、このような問題点を解決した洗浄剤の開発が望まれている。
(1) リン酸と、フッ化水素酸と、アンモニアおよび/またはアミンとを含有し、
pHが2〜12の範囲の水溶液であり、
リン酸を0.5〜25質量%、
アンモニアおよび/またはアミンを0.1〜10質量%、
フッ化水素酸を5×10-3〜5.0質量%含有する洗浄剤。
(2) pHをリン酸で調整する上記(1)の洗浄剤。
(3) さらに、界面活性剤および/またはキレート剤を含有する上記(1)または(2)の洗浄剤。
(4) さらに、過酸化水素を含有する上記(1)〜(3)のいずれかの洗浄剤。
(5) 半導体デバイス用基板表面のパーティクルおよび/または金属不純物を洗浄・除去するために用いられる上記(1)〜(4)のいずれかの洗浄剤。
本発明の洗浄剤は、リン酸、フッ化水素酸、アンモニアおよび/またはアミンを含有し、pHが2〜12の範囲の水溶液であり、リン酸を0.5〜25質量%、アンモニアおよび/またはアミンを0.1〜10質量%、フッ化水素酸を5×10-3質量%(50ppm)〜5.0質量%含有するものである。
モノマーリン酸アンモニウム(リン酸20%・アンモニア7.4%)、20%リン酸、50%フッ化水素酸、スルホン酸型界面活性剤を表1に示す組成で混合し、pHを2〜6に調整した。スルホン酸型界面活性剤は、炭素数11〜16の範囲のアルキル直鎖が混合したものであり、対イオンがNH4 +のものである。
APM(NH4OHとH2O2とH2Oとの混合物)にて洗浄した8インチ(20.32cm)ベアシリコン(Bare−Si)ウエーハにSi粒子を3000〜4000個程度(0.12μm 径以上)強制付着させ、以上で調製した洗浄剤(薬液)を用いて、2流体スプレー方式の枚葉洗浄装置にて洗浄した。
試験結果を表2に示す。
モノマーリン酸アンモニウム(リン酸20%・アンモニア7.4%)、20%リン酸、50%フッ化水素酸、スルホン酸型界面活性剤(実施例1と同じ)を表3に示す組成に混合し、pHを4に調整した。
実施例1と同様の操作を行い、除去率を算出した。但し、洗浄工程における薬液処理時間は60秒とし、2流体スプレーのN2流量は13NLとし、DIW流量は1.5L/minとした。
試験結果を表4に示す。
モノマーリン酸アンモニウム(リン酸20%・アンモニア7.4%)、20%リン酸、50%フッ化水素酸、スルホン酸型界面活性剤を(実施例1と同じ)を表5に示す組成に混合し、pHを3〜6に調整した。
Bare−Siウエーハおよび熱酸化ケイ素(Th−SiO2)積層ウエーハを3cm×6cmに割断し、DHF(HF:H2O(体積比)=1:100)に25℃、1分浸漬して自然酸化膜を除去した後、Bare−Siウエーハにおいては、APM(NH4OH:H2O2:H2O(体積比)=1:1:5)に60℃、10分浸漬して化学酸化膜を形成させた。これらのウエーハ表面について上記薬液接触時におけるζ電位をレーザーζ電位計(ELS-8000大塚電子)にて測定した。
結果を表6に示す。
剤を添加するのが望ましいことが判る。
モノマーリン酸アンモニウム(リン酸20%・アンモニア7.4%)、20%リン酸、50%フッ化水素酸、スルホン酸型界面活性剤(実施例1と同じ)を表7に示す組成で混合し、pHを3に調整した。
実施例1と同様の操作を行い、除去率を算出した。洗浄工程は薬液処理時間は60秒とし、実施例1と同様とした。
結果を表8に示す。
モノマーリン酸アンモニウム(リン酸20%・アンモニア7.4%)、20%リン酸、50%フッ化水素酸、スルホン酸型界面活性剤(実施例1と同じ)、30%過酸化水素水を表9の濃度になるように混合し、pHを3〜6に調整した。
APMおよびHPM(塩酸と過酸化水素と水との混合物)にて洗浄した8インチ(20.32cm)ベア(Bare)−Siウエーハを金属イオン(K,Ca,Ti,Cr,Mn,Fe,Ni,Cu,Zn)を14ppb添加した薬液に25℃、1分浸漬後DIWリンスし、処理前後の金属イオン量(atoms/cm2:1cm2当たりの金属イオンの個数)を全反射蛍光X線分析装置(TXRF(Rigaku))にて測定した。
結果を表10に示す。
表9の洗浄剤21〜24と同様の洗浄剤を調製した。
APMおよびHPMにて洗浄した8インチBare−Siウエーハを金属イオン(K,Ca,Ti,Cr,Mn,Fe,Ni,Cu,Zn)を1013程度強制汚染し、以上で調製した薬液を用いて、枚葉洗浄装置にて洗浄し、処理前後の金属イオン量を実施例5と同様にして測定した。
結果を表11に示す。
結果を表12に示す。
Claims (5)
- リン酸と、フッ化水素酸と、アンモニアおよび/またはアミンとを含有し、
pHが2〜12の範囲の水溶液であり、
リン酸を0.5〜25質量%、
アンモニアおよび/またはアミンを0.1〜10質量%、
フッ化水素酸を5×10-3〜5.0質量%含有する洗浄剤。 - pHをリン酸で調整する請求項1の洗浄剤。
- さらに、界面活性剤および/またはキレート剤を含有する請求項1または2の洗浄剤。
- さらに、過酸化水素を含有する請求項1〜3のいずれかの洗浄剤。
- 半導体デバイス用基板表面のパーティクルおよび/または金属不純物を洗浄・除去するために用いられる請求項1〜4のいずれかの洗浄剤。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0641770A (ja) * | 1992-07-27 | 1994-02-15 | Daikin Ind Ltd | シリコンウエハ表面の処理方法 |
JPH0684866A (ja) * | 1992-09-04 | 1994-03-25 | Hitachi Ltd | 異物付着防止方法 |
JPH0745600A (ja) * | 1993-01-20 | 1995-02-14 | Hitachi Ltd | 液中異物付着防止溶液とそれを用いたエッチング方法及び装置 |
JPH07115077A (ja) * | 1993-10-19 | 1995-05-02 | Nippon Steel Corp | シリコン半導体およびシリコン酸化物の洗浄液 |
JPH0848996A (ja) * | 1994-08-05 | 1996-02-20 | Nippon Steel Corp | シリコンウェハおよびシリコン酸化物の洗浄液 |
JP2001044161A (ja) * | 1999-08-03 | 2001-02-16 | Kao Corp | 洗浄剤組成物 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5232989A (en) * | 1991-03-04 | 1993-08-03 | Monsanto Company | Functionalized polymers |
JPH068466A (ja) * | 1992-06-25 | 1994-01-18 | Canon Inc | インク容器、これを用いた記録ヘッドユニットおよびこれを搭載する記録装置 |
JPH07216392A (ja) | 1994-01-26 | 1995-08-15 | Daikin Ind Ltd | 洗浄剤及び洗浄方法 |
CN1096703C (zh) * | 1995-11-15 | 2002-12-18 | 大金工业株式会社 | 晶片处理液及其制造方法 |
KR20010012709A (ko) * | 1997-06-13 | 2001-02-26 | 월터 알란 이. | 반도체 웨이퍼 처리방법 |
TW467953B (en) * | 1998-11-12 | 2001-12-11 | Mitsubishi Gas Chemical Co | New detergent and cleaning method of using it |
US6248704B1 (en) | 1999-05-03 | 2001-06-19 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductors devices |
EP1389496A1 (en) * | 2001-05-22 | 2004-02-18 | Mitsubishi Chemical Corporation | Method for cleaning surface of substrate |
-
2003
- 2003-11-25 JP JP2003394271A patent/JP4498726B2/ja not_active Expired - Lifetime
-
2004
- 2004-11-17 TW TW093135307A patent/TW200519196A/zh unknown
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- 2004-11-24 DE DE602004029704T patent/DE602004029704D1/de active Active
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- 2004-11-24 KR KR1020087010763A patent/KR20080042945A/ko active IP Right Grant
- 2004-11-24 US US10/579,141 patent/US7579307B2/en active Active
- 2004-11-24 KR KR1020067009444A patent/KR100892386B1/ko active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0641770A (ja) * | 1992-07-27 | 1994-02-15 | Daikin Ind Ltd | シリコンウエハ表面の処理方法 |
JPH0684866A (ja) * | 1992-09-04 | 1994-03-25 | Hitachi Ltd | 異物付着防止方法 |
JPH0745600A (ja) * | 1993-01-20 | 1995-02-14 | Hitachi Ltd | 液中異物付着防止溶液とそれを用いたエッチング方法及び装置 |
JPH07115077A (ja) * | 1993-10-19 | 1995-05-02 | Nippon Steel Corp | シリコン半導体およびシリコン酸化物の洗浄液 |
JPH0848996A (ja) * | 1994-08-05 | 1996-02-20 | Nippon Steel Corp | シリコンウェハおよびシリコン酸化物の洗浄液 |
JP2001044161A (ja) * | 1999-08-03 | 2001-02-16 | Kao Corp | 洗浄剤組成物 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007073722A (ja) * | 2005-09-07 | 2007-03-22 | Sony Corp | 洗浄方法および半導体装置の製造方法 |
JP2007184307A (ja) * | 2005-12-29 | 2007-07-19 | Nichicon Corp | 電解コンデンサの駆動用電解液、およびこれを用いた電解コンデンサ |
WO2010134185A1 (ja) * | 2009-05-21 | 2010-11-25 | ステラケミファ株式会社 | 洗浄液及び洗浄方法 |
WO2011014027A2 (ko) * | 2009-07-29 | 2011-02-03 | 동우 화인켐 주식회사 | 세정액 조성물 및 이를 이용한 패널의 세정방법 |
WO2011014027A3 (ko) * | 2009-07-29 | 2011-06-16 | 동우 화인켐 주식회사 | 세정액 조성물 및 이를 이용한 패널의 세정방법 |
WO2012090755A1 (ja) * | 2010-12-28 | 2012-07-05 | コニカミノルタオプト株式会社 | 記録媒体用ガラス基板を製造する方法 |
WO2012090597A1 (ja) * | 2010-12-28 | 2012-07-05 | コニカミノルタオプト株式会社 | 記録媒体用ガラス基板を製造する方法 |
WO2012090598A1 (ja) * | 2010-12-28 | 2012-07-05 | コニカミノルタオプト株式会社 | 記録媒体用ガラス基板を製造する方法 |
WO2012090754A1 (ja) * | 2010-12-28 | 2012-07-05 | コニカミノルタオプト株式会社 | 記録媒体用ガラス基板を製造する方法 |
KR20130021581A (ko) | 2011-08-23 | 2013-03-06 | 동우 화인켐 주식회사 | 평판 디스플레이 제조에 필요한 세정액 조성물 및 이를 이용한 세정방법 |
CN107164109A (zh) * | 2017-03-31 | 2017-09-15 | 吴江创源新材料科技有限公司 | 一种蓝宝石晶片退火前清洗液及其制备方法和清洗工艺 |
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EP1688477A4 (en) | 2008-08-20 |
KR20060087607A (ko) | 2006-08-02 |
TW200519196A (en) | 2005-06-16 |
EP1688477A1 (en) | 2006-08-09 |
EP1688477B8 (en) | 2010-12-15 |
CN1867659B (zh) | 2011-03-16 |
WO2005052109A1 (ja) | 2005-06-09 |
CN1867659A (zh) | 2006-11-22 |
JP4498726B2 (ja) | 2010-07-07 |
KR100892386B1 (ko) | 2009-05-27 |
KR20080042945A (ko) | 2008-05-15 |
TWI346137B (ja) | 2011-08-01 |
EP1688477B1 (en) | 2010-10-20 |
DE602004029704D1 (de) | 2010-12-02 |
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US20070105735A1 (en) | 2007-05-10 |
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