KR100443685B1 - 광전자적 마이크로 전자 시스템 - Google Patents

광전자적 마이크로 전자 시스템 Download PDF

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Publication number
KR100443685B1
KR100443685B1 KR10-2002-7003057A KR20027003057A KR100443685B1 KR 100443685 B1 KR100443685 B1 KR 100443685B1 KR 20027003057 A KR20027003057 A KR 20027003057A KR 100443685 B1 KR100443685 B1 KR 100443685B1
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KR
South Korea
Prior art keywords
well
semiconductor substrate
mesa
region
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2002-7003057A
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English (en)
Korean (ko)
Other versions
KR20020030105A (ko
Inventor
토마스 슐츠
볼프강 뢰스너
로타 리쉬
Original Assignee
인피네온 테크놀로지스 아게
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 인피네온 테크놀로지스 아게 filed Critical 인피네온 테크놀로지스 아게
Publication of KR20020030105A publication Critical patent/KR20020030105A/ko
Application granted granted Critical
Publication of KR100443685B1 publication Critical patent/KR100443685B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Light Receiving Elements (AREA)
  • Element Separation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR10-2002-7003057A 1999-09-07 2000-09-06 광전자적 마이크로 전자 시스템 Expired - Fee Related KR100443685B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19942692A DE19942692B4 (de) 1999-09-07 1999-09-07 Optoelektronische Mikroelektronikanordnung
DE19942692.9 1999-09-07

Publications (2)

Publication Number Publication Date
KR20020030105A KR20020030105A (ko) 2002-04-22
KR100443685B1 true KR100443685B1 (ko) 2004-08-09

Family

ID=7921097

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-7003057A Expired - Fee Related KR100443685B1 (ko) 1999-09-07 2000-09-06 광전자적 마이크로 전자 시스템

Country Status (5)

Country Link
US (1) US6553157B2 (enExample)
JP (1) JP3836026B2 (enExample)
KR (1) KR100443685B1 (enExample)
DE (1) DE19942692B4 (enExample)
WO (1) WO2001018867A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6815245B2 (en) * 2000-12-26 2004-11-09 National Research Council Of Canada High speed and high efficiency Si-based photodetectors using waveguides formed with silicides for near IR applications
DE10123363A1 (de) * 2001-05-14 2002-11-28 Infineon Technologies Ag Über einem Substrat angeordnete Struktur einer integrierten Schaltungsanordnung
US7010208B1 (en) * 2002-06-24 2006-03-07 Luxtera, Inc. CMOS process silicon waveguides
JP4227513B2 (ja) * 2003-12-26 2009-02-18 浜松ホトニクス株式会社 半導体受光素子
US8682116B2 (en) 2007-08-08 2014-03-25 Infineon Technologies Ag Integrated circuit including non-planar structure and waveguide
KR101419802B1 (ko) * 2010-09-09 2014-07-17 한국전자통신연구원 광전 소자 및 그를 구비한 마흐-젠더 광변조기
US10666353B1 (en) * 2018-11-20 2020-05-26 Juniper Networks, Inc. Normal incidence photodetector with self-test functionality
US10739622B2 (en) * 2018-12-28 2020-08-11 Juniper Networks, Inc. Integrated optoelectronic device with heater

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2624436C2 (de) * 1976-06-01 1982-11-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Lichtwellenleiter mit integriertem Detektorelement
US4744623A (en) * 1985-10-16 1988-05-17 The Trustees Of Columbia University In The City Of New York Integrated fiber optic coupler for VHSIC/VLSI interconnects
DE3920219A1 (de) * 1989-06-21 1991-01-10 Licentia Gmbh Betrieb eines optischen detektors bzw. optischer detektor geeignet fuer diesen betrieb
US4970386A (en) * 1989-06-22 1990-11-13 Westinghouse Electric Corp. Vertical FET high speed optical sensor
JP2910696B2 (ja) * 1996-09-20 1999-06-23 日本電気株式会社 半導体光検出器
US6387720B1 (en) * 1999-12-14 2002-05-14 Phillips Electronics North America Corporation Waveguide structures integrated with standard CMOS circuitry and methods for making the same
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same

Also Published As

Publication number Publication date
JP2004500704A (ja) 2004-01-08
KR20020030105A (ko) 2002-04-22
US6553157B2 (en) 2003-04-22
WO2001018867A1 (de) 2001-03-15
US20020110329A1 (en) 2002-08-15
DE19942692A1 (de) 2001-04-12
JP3836026B2 (ja) 2006-10-18
DE19942692B4 (de) 2007-04-12

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