JP3836026B2 - フォトダイオード - Google Patents

フォトダイオード Download PDF

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Publication number
JP3836026B2
JP3836026B2 JP2001522591A JP2001522591A JP3836026B2 JP 3836026 B2 JP3836026 B2 JP 3836026B2 JP 2001522591 A JP2001522591 A JP 2001522591A JP 2001522591 A JP2001522591 A JP 2001522591A JP 3836026 B2 JP3836026 B2 JP 3836026B2
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JP
Japan
Prior art keywords
mesa
zone
depression
semiconductor substrate
photodiode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001522591A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004500704A (ja
JP2004500704A5 (enExample
Inventor
シュルツ，トーマス
レスナー，ヴォルフガング
リッシュ，ローター
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of JP2004500704A publication Critical patent/JP2004500704A/ja
Publication of JP2004500704A5 publication Critical patent/JP2004500704A5/ja
Application granted granted Critical
Publication of JP3836026B2 publication Critical patent/JP3836026B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

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  • Light Receiving Elements (AREA)
  • Element Separation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2001522591A 1999-09-07 2000-09-06 フォトダイオード Expired - Fee Related JP3836026B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19942692A DE19942692B4 (de) 1999-09-07 1999-09-07 Optoelektronische Mikroelektronikanordnung
PCT/DE2000/003073 WO2001018867A1 (de) 1999-09-07 2000-09-06 Optoelektronische mikroelektronikanordnung

Publications (3)

Publication Number Publication Date
JP2004500704A JP2004500704A (ja) 2004-01-08
JP2004500704A5 JP2004500704A5 (enExample) 2004-12-24
JP3836026B2 true JP3836026B2 (ja) 2006-10-18

Family

ID=7921097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001522591A Expired - Fee Related JP3836026B2 (ja) 1999-09-07 2000-09-06 フォトダイオード

Country Status (5)

Country Link
US (1) US6553157B2 (enExample)
JP (1) JP3836026B2 (enExample)
KR (1) KR100443685B1 (enExample)
DE (1) DE19942692B4 (enExample)
WO (1) WO2001018867A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6815245B2 (en) * 2000-12-26 2004-11-09 National Research Council Of Canada High speed and high efficiency Si-based photodetectors using waveguides formed with silicides for near IR applications
DE10123363A1 (de) * 2001-05-14 2002-11-28 Infineon Technologies Ag Über einem Substrat angeordnete Struktur einer integrierten Schaltungsanordnung
US7010208B1 (en) * 2002-06-24 2006-03-07 Luxtera, Inc. CMOS process silicon waveguides
JP4227513B2 (ja) * 2003-12-26 2009-02-18 浜松ホトニクス株式会社 半導体受光素子
US8682116B2 (en) 2007-08-08 2014-03-25 Infineon Technologies Ag Integrated circuit including non-planar structure and waveguide
KR101419802B1 (ko) * 2010-09-09 2014-07-17 한국전자통신연구원 광전 소자 및 그를 구비한 마흐-젠더 광변조기
US10666353B1 (en) * 2018-11-20 2020-05-26 Juniper Networks, Inc. Normal incidence photodetector with self-test functionality
US10739622B2 (en) * 2018-12-28 2020-08-11 Juniper Networks, Inc. Integrated optoelectronic device with heater

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2624436C2 (de) * 1976-06-01 1982-11-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Lichtwellenleiter mit integriertem Detektorelement
US4744623A (en) * 1985-10-16 1988-05-17 The Trustees Of Columbia University In The City Of New York Integrated fiber optic coupler for VHSIC/VLSI interconnects
DE3920219A1 (de) * 1989-06-21 1991-01-10 Licentia Gmbh Betrieb eines optischen detektors bzw. optischer detektor geeignet fuer diesen betrieb
US4970386A (en) * 1989-06-22 1990-11-13 Westinghouse Electric Corp. Vertical FET high speed optical sensor
JP2910696B2 (ja) * 1996-09-20 1999-06-23 日本電気株式会社 半導体光検出器
US6387720B1 (en) * 1999-12-14 2002-05-14 Phillips Electronics North America Corporation Waveguide structures integrated with standard CMOS circuitry and methods for making the same
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same

Also Published As

Publication number Publication date
KR100443685B1 (ko) 2004-08-09
JP2004500704A (ja) 2004-01-08
KR20020030105A (ko) 2002-04-22
US6553157B2 (en) 2003-04-22
WO2001018867A1 (de) 2001-03-15
US20020110329A1 (en) 2002-08-15
DE19942692A1 (de) 2001-04-12
DE19942692B4 (de) 2007-04-12

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