DE19942692B4 - Optoelektronische Mikroelektronikanordnung - Google Patents
Optoelektronische Mikroelektronikanordnung Download PDFInfo
- Publication number
- DE19942692B4 DE19942692B4 DE19942692A DE19942692A DE19942692B4 DE 19942692 B4 DE19942692 B4 DE 19942692B4 DE 19942692 A DE19942692 A DE 19942692A DE 19942692 A DE19942692 A DE 19942692A DE 19942692 B4 DE19942692 B4 DE 19942692B4
- Authority
- DE
- Germany
- Prior art keywords
- mesa
- tub
- semiconductor substrate
- zone
- well
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004377 microelectronic Methods 0.000 title claims abstract description 18
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 230000003287 optical effect Effects 0.000 claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims abstract description 3
- 230000005669 field effect Effects 0.000 claims description 12
- 239000013307 optical fiber Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 125000006850 spacer group Chemical group 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims 1
- 238000002955 isolation Methods 0.000 description 10
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 230000010354 integration Effects 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000429 assembly Methods 0.000 description 3
- 230000000712 assembly Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 1
- 241000152158 Mesene Species 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Light Receiving Elements (AREA)
- Element Separation (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19942692A DE19942692B4 (de) | 1999-09-07 | 1999-09-07 | Optoelektronische Mikroelektronikanordnung |
| JP2001522591A JP3836026B2 (ja) | 1999-09-07 | 2000-09-06 | フォトダイオード |
| PCT/DE2000/003073 WO2001018867A1 (de) | 1999-09-07 | 2000-09-06 | Optoelektronische mikroelektronikanordnung |
| KR10-2002-7003057A KR100443685B1 (ko) | 1999-09-07 | 2000-09-06 | 광전자적 마이크로 전자 시스템 |
| US10/093,320 US6553157B2 (en) | 1999-09-07 | 2002-03-07 | Optoelectronic microelectronic system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19942692A DE19942692B4 (de) | 1999-09-07 | 1999-09-07 | Optoelektronische Mikroelektronikanordnung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE19942692A1 DE19942692A1 (de) | 2001-04-12 |
| DE19942692B4 true DE19942692B4 (de) | 2007-04-12 |
Family
ID=7921097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19942692A Expired - Fee Related DE19942692B4 (de) | 1999-09-07 | 1999-09-07 | Optoelektronische Mikroelektronikanordnung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6553157B2 (enExample) |
| JP (1) | JP3836026B2 (enExample) |
| KR (1) | KR100443685B1 (enExample) |
| DE (1) | DE19942692B4 (enExample) |
| WO (1) | WO2001018867A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6815245B2 (en) * | 2000-12-26 | 2004-11-09 | National Research Council Of Canada | High speed and high efficiency Si-based photodetectors using waveguides formed with silicides for near IR applications |
| DE10123363A1 (de) * | 2001-05-14 | 2002-11-28 | Infineon Technologies Ag | Über einem Substrat angeordnete Struktur einer integrierten Schaltungsanordnung |
| US7010208B1 (en) * | 2002-06-24 | 2006-03-07 | Luxtera, Inc. | CMOS process silicon waveguides |
| JP4227513B2 (ja) * | 2003-12-26 | 2009-02-18 | 浜松ホトニクス株式会社 | 半導体受光素子 |
| US8682116B2 (en) | 2007-08-08 | 2014-03-25 | Infineon Technologies Ag | Integrated circuit including non-planar structure and waveguide |
| KR101419802B1 (ko) * | 2010-09-09 | 2014-07-17 | 한국전자통신연구원 | 광전 소자 및 그를 구비한 마흐-젠더 광변조기 |
| US10666353B1 (en) * | 2018-11-20 | 2020-05-26 | Juniper Networks, Inc. | Normal incidence photodetector with self-test functionality |
| US10739622B2 (en) * | 2018-12-28 | 2020-08-11 | Juniper Networks, Inc. | Integrated optoelectronic device with heater |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2624436A1 (de) * | 1976-06-01 | 1977-12-08 | Licentia Gmbh | Lichtwellenleiter mit angeschlossenem detektor |
| US4970386A (en) * | 1989-06-22 | 1990-11-13 | Westinghouse Electric Corp. | Vertical FET high speed optical sensor |
| DE3920219C2 (enExample) * | 1989-06-21 | 1993-07-29 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt, De |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4744623A (en) * | 1985-10-16 | 1988-05-17 | The Trustees Of Columbia University In The City Of New York | Integrated fiber optic coupler for VHSIC/VLSI interconnects |
| JP2910696B2 (ja) * | 1996-09-20 | 1999-06-23 | 日本電気株式会社 | 半導体光検出器 |
| US6387720B1 (en) * | 1999-12-14 | 2002-05-14 | Phillips Electronics North America Corporation | Waveguide structures integrated with standard CMOS circuitry and methods for making the same |
| US6392257B1 (en) * | 2000-02-10 | 2002-05-21 | Motorola Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
-
1999
- 1999-09-07 DE DE19942692A patent/DE19942692B4/de not_active Expired - Fee Related
-
2000
- 2000-09-06 WO PCT/DE2000/003073 patent/WO2001018867A1/de not_active Ceased
- 2000-09-06 KR KR10-2002-7003057A patent/KR100443685B1/ko not_active Expired - Fee Related
- 2000-09-06 JP JP2001522591A patent/JP3836026B2/ja not_active Expired - Fee Related
-
2002
- 2002-03-07 US US10/093,320 patent/US6553157B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2624436A1 (de) * | 1976-06-01 | 1977-12-08 | Licentia Gmbh | Lichtwellenleiter mit angeschlossenem detektor |
| DE3920219C2 (enExample) * | 1989-06-21 | 1993-07-29 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt, De | |
| US4970386A (en) * | 1989-06-22 | 1990-11-13 | Westinghouse Electric Corp. | Vertical FET high speed optical sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100443685B1 (ko) | 2004-08-09 |
| JP2004500704A (ja) | 2004-01-08 |
| KR20020030105A (ko) | 2002-04-22 |
| US6553157B2 (en) | 2003-04-22 |
| WO2001018867A1 (de) | 2001-03-15 |
| US20020110329A1 (en) | 2002-08-15 |
| DE19942692A1 (de) | 2001-04-12 |
| JP3836026B2 (ja) | 2006-10-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |