KR100437221B1 - 반도체 장치의 제조 방법 및 제조 시스템, 및 반도체 장치 - Google Patents

반도체 장치의 제조 방법 및 제조 시스템, 및 반도체 장치 Download PDF

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Publication number
KR100437221B1
KR100437221B1 KR10-2001-0041821A KR20010041821A KR100437221B1 KR 100437221 B1 KR100437221 B1 KR 100437221B1 KR 20010041821 A KR20010041821 A KR 20010041821A KR 100437221 B1 KR100437221 B1 KR 100437221B1
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KR
South Korea
Prior art keywords
oxide film
film
processing
semiconductor device
manufacturing
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Expired - Fee Related
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KR10-2001-0041821A
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English (en)
Korean (ko)
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KR20020038458A (ko
Inventor
오모리도시아끼
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미쓰비시덴키 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Weting (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
KR10-2001-0041821A 2000-11-16 2001-07-12 반도체 장치의 제조 방법 및 제조 시스템, 및 반도체 장치 Expired - Fee Related KR100437221B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000349027A JP4437611B2 (ja) 2000-11-16 2000-11-16 半導体装置の製造方法
JPJP-P-2000-00349027 2000-11-16

Publications (2)

Publication Number Publication Date
KR20020038458A KR20020038458A (ko) 2002-05-23
KR100437221B1 true KR100437221B1 (ko) 2004-06-23

Family

ID=18822503

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0041821A Expired - Fee Related KR100437221B1 (ko) 2000-11-16 2001-07-12 반도체 장치의 제조 방법 및 제조 시스템, 및 반도체 장치

Country Status (4)

Country Link
US (1) US20020056700A1 (enrdf_load_stackoverflow)
JP (1) JP4437611B2 (enrdf_load_stackoverflow)
KR (1) KR100437221B1 (enrdf_load_stackoverflow)
TW (1) TW507266B (enrdf_load_stackoverflow)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004021405A2 (en) * 2002-08-28 2004-03-11 Tokyo Electron Limited Method and system for dynamic modeling and recipe optimization of semiconductor etch processes
US6842661B2 (en) * 2002-09-30 2005-01-11 Advanced Micro Devices, Inc. Process control at an interconnect level
US7265382B2 (en) * 2002-11-12 2007-09-04 Applied Materials, Inc. Method and apparatus employing integrated metrology for improved dielectric etch efficiency
JP2004319574A (ja) * 2003-04-11 2004-11-11 Trecenti Technologies Inc 半導体装置の製造方法、半導体製造装置の自動運転方法および自動運転システム、並びにｃｍｐ装置の自動運転方法
US8257546B2 (en) 2003-04-11 2012-09-04 Applied Materials, Inc. Method and system for monitoring an etch process
CN1842900A (zh) * 2003-07-31 2006-10-04 Fsi国际公司 非常均匀的氧化物层、尤其是超薄层的受控生长
KR20060121871A (ko) * 2003-09-11 2006-11-29 에프에스아이 인터내쇼날 인크. 음의 장 균등을 위한 음향 발산기
WO2005027202A1 (en) * 2003-09-11 2005-03-24 Fsi International, Inc. Semiconductor wafer immersion systems and treatments using modulated acoustic energy
JP4305401B2 (ja) * 2005-02-28 2009-07-29 セイコーエプソン株式会社 半導体装置
JP2006245036A (ja) * 2005-02-28 2006-09-14 Seiko Epson Corp 素子分離層の形成方法及び電子デバイスの製造方法、ｃｍｐ装置
US7596421B2 (en) 2005-06-21 2009-09-29 Kabushik Kaisha Toshiba Process control system, process control method, and method of manufacturing electronic apparatus
US8070972B2 (en) * 2006-03-30 2011-12-06 Tokyo Electron Limited Etching method and etching apparatus
JP4990548B2 (ja) 2006-04-07 2012-08-01 株式会社日立製作所 半導体装置の製造方法
JP5076426B2 (ja) * 2006-09-29 2012-11-21 富士通セミコンダクター株式会社 半導体装置の製造方法
JP4971050B2 (ja) 2007-06-21 2012-07-11 株式会社日立製作所 半導体装置の寸法測定装置
JP5401797B2 (ja) 2008-02-06 2014-01-29 富士通セミコンダクター株式会社 半導体装置の製造方法及び半導体装置製造システム
JP2010087300A (ja) * 2008-09-30 2010-04-15 Toshiba Corp 半導体装置の製造方法
JP5853382B2 (ja) * 2011-03-11 2016-02-09 ソニー株式会社 半導体装置の製造方法、及び電子機器の製造方法
US9005464B2 (en) * 2011-06-27 2015-04-14 International Business Machines Corporation Tool for manufacturing semiconductor structures and method of use
CN104409348B (zh) * 2014-11-10 2017-08-08 成都士兰半导体制造有限公司 沟槽器件的制作方法
DE112017007540T5 (de) * 2017-05-15 2020-01-23 Mitsubishi Electric Corporation Verfahren zum Herstellen einer Halbleitervorrichtung

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060731A (ja) * 1983-09-14 1985-04-08 Hitachi Ltd 半導体装置の製法
US5399229A (en) * 1993-05-13 1995-03-21 Texas Instruments Incorporated System and method for monitoring and evaluating semiconductor wafer fabrication
KR19980014172A (ko) * 1996-08-08 1998-05-15 김광호 반도체 제조공정의 오버레이 측정방법
JPH10163286A (ja) * 1996-11-29 1998-06-19 Nec Corp 半導体装置の製造装置
KR19990054210A (ko) * 1997-12-26 1999-07-15 윤종용 반도체 제조용 증착설비의 막두께 조절방법
KR100382021B1 (ko) * 2000-02-03 2003-04-26 가부시끼가이샤 도시바 반도체 장치 제조 방법, 반도체 장치 제조 지원 시스템, 및 반도체 장치 제조 시스템

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6148239A (en) * 1997-12-12 2000-11-14 Advanced Micro Devices, Inc. Process control system using feed forward control threads based on material groups

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060731A (ja) * 1983-09-14 1985-04-08 Hitachi Ltd 半導体装置の製法
US5399229A (en) * 1993-05-13 1995-03-21 Texas Instruments Incorporated System and method for monitoring and evaluating semiconductor wafer fabrication
KR19980014172A (ko) * 1996-08-08 1998-05-15 김광호 반도체 제조공정의 오버레이 측정방법
JPH10163286A (ja) * 1996-11-29 1998-06-19 Nec Corp 半導体装置の製造装置
KR19990054210A (ko) * 1997-12-26 1999-07-15 윤종용 반도체 제조용 증착설비의 막두께 조절방법
KR100382021B1 (ko) * 2000-02-03 2003-04-26 가부시끼가이샤 도시바 반도체 장치 제조 방법, 반도체 장치 제조 지원 시스템, 및 반도체 장치 제조 시스템

Also Published As

Publication number Publication date
KR20020038458A (ko) 2002-05-23
US20020056700A1 (en) 2002-05-16
TW507266B (en) 2002-10-21
JP2002151465A (ja) 2002-05-24
JP4437611B2 (ja) 2010-03-24

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