KR100394517B1 - 집적회로에트렌치격리구조를형성하는방법 - Google Patents

집적회로에트렌치격리구조를형성하는방법 Download PDF

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Publication number
KR100394517B1
KR100394517B1 KR1019960009824A KR19960009824A KR100394517B1 KR 100394517 B1 KR100394517 B1 KR 100394517B1 KR 1019960009824 A KR1019960009824 A KR 1019960009824A KR 19960009824 A KR19960009824 A KR 19960009824A KR 100394517 B1 KR100394517 B1 KR 100394517B1
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South Korea
Prior art keywords
layer
trench
dielectric layer
remainder
forming
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Expired - Fee Related
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English (en)
Korean (ko)
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KR960036914A (ko
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에이취. 페레라 아산자
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모토로라 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
KR1019960009824A 1995-04-04 1996-04-02 집적회로에트렌치격리구조를형성하는방법 Expired - Fee Related KR100394517B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/416,243 US5786263A (en) 1995-04-04 1995-04-04 Method for forming a trench isolation structure in an integrated circuit
US416,243 1995-04-04

Publications (2)

Publication Number Publication Date
KR960036914A KR960036914A (ko) 1996-11-19
KR100394517B1 true KR100394517B1 (ko) 2003-10-17

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960009824A Expired - Fee Related KR100394517B1 (ko) 1995-04-04 1996-04-02 집적회로에트렌치격리구조를형성하는방법

Country Status (6)

Country Link
US (1) US5786263A (enExample)
EP (1) EP0736897B1 (enExample)
JP (2) JP4416843B2 (enExample)
KR (1) KR100394517B1 (enExample)
DE (1) DE69623679T2 (enExample)
TW (1) TW348274B (enExample)

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Also Published As

Publication number Publication date
EP0736897B1 (en) 2002-09-18
JP4416843B2 (ja) 2010-02-17
JP2007096353A (ja) 2007-04-12
US5786263A (en) 1998-07-28
KR960036914A (ko) 1996-11-19
EP0736897A3 (en) 1998-03-11
EP0736897A2 (en) 1996-10-09
JPH08279552A (ja) 1996-10-22
DE69623679T2 (de) 2003-05-22
TW348274B (en) 1998-12-21
DE69623679D1 (de) 2002-10-24
JP4168073B2 (ja) 2008-10-22

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Not in force date: 20150801

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000