KR100381769B1 - 자체정렬된소스와드레인영역및전계효과트랜지스터형성방법과이를위한저손실도핑방법및그구조체 - Google Patents

자체정렬된소스와드레인영역및전계효과트랜지스터형성방법과이를위한저손실도핑방법및그구조체 Download PDF

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Publication number
KR100381769B1
KR100381769B1 KR10-1998-0700002A KR19980700002A KR100381769B1 KR 100381769 B1 KR100381769 B1 KR 100381769B1 KR 19980700002 A KR19980700002 A KR 19980700002A KR 100381769 B1 KR100381769 B1 KR 100381769B1
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South Korea
Prior art keywords
layer
impurity
source
substrate
gate
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Expired - Fee Related
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KR10-1998-0700002A
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English (en)
Korean (ko)
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KR19990028704A (ko
Inventor
스코트 톰슨
마크 티. 보어
폴 에이. 팩칸
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인텔 코오퍼레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR10-1998-0700002A 1995-07-03 1996-07-01 자체정렬된소스와드레인영역및전계효과트랜지스터형성방법과이를위한저손실도핑방법및그구조체 Expired - Fee Related KR100381769B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8/498,028 1995-07-03
US08/498,028 US5976939A (en) 1995-07-03 1995-07-03 Low damage doping technique for self-aligned source and drain regions
US08/498,028 1995-07-03

Publications (2)

Publication Number Publication Date
KR19990028704A KR19990028704A (ko) 1999-04-15
KR100381769B1 true KR100381769B1 (ko) 2003-08-19

Family

ID=23979326

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1998-0700002A Expired - Fee Related KR100381769B1 (ko) 1995-07-03 1996-07-01 자체정렬된소스와드레인영역및전계효과트랜지스터형성방법과이를위한저손실도핑방법및그구조체

Country Status (8)

Country Link
US (1) US5976939A (enExample)
EP (1) EP0838085A4 (enExample)
JP (1) JPH11509042A (enExample)
KR (1) KR100381769B1 (enExample)
AU (1) AU6406796A (enExample)
CA (1) CA2225926A1 (enExample)
TW (1) TW306047B (enExample)
WO (1) WO1997002594A1 (enExample)

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JP3107157B2 (ja) * 1998-04-20 2000-11-06 日本電気株式会社 半導体装置およびその製造方法
US6232165B1 (en) * 1998-12-09 2001-05-15 Winbond Electronics Corporation Buried guard rings and method for forming the same
US6133131A (en) * 1999-04-19 2000-10-17 United Microelectronics Corp. Method of forming a gate spacer on a semiconductor wafer
US6329273B1 (en) * 1999-10-29 2001-12-11 Advanced Micro Devices, Inc. Solid-source doping for source/drain to eliminate implant damage
JP2001127271A (ja) * 1999-10-29 2001-05-11 Nec Corp 半導体製造装置の製造方法
US6265274B1 (en) * 1999-11-01 2001-07-24 United Microelectronics Corp. Method of a metal oxide semiconductor on a semiconductor wafer
KR20010066122A (ko) * 1999-12-31 2001-07-11 박종섭 반도체 소자의 폴리사이드 듀얼 게이트 형성 방법
US6703688B1 (en) 2001-03-02 2004-03-09 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6830976B2 (en) 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6506650B1 (en) * 2001-04-27 2003-01-14 Advanced Micro Devices, Inc. Method of fabrication based on solid-phase epitaxy for a MOSFET transistor with a controlled dopant profile
WO2003025984A2 (en) 2001-09-21 2003-03-27 Amberwave Systems Corporation Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
AU2002341803A1 (en) 2001-09-24 2003-04-07 Amberwave Systems Corporation Rf circuits including transistors having strained material layers
US6730556B2 (en) * 2001-12-12 2004-05-04 Texas Instruments Incorporated Complementary transistors with controlled drain extension overlap
US6849528B2 (en) * 2001-12-12 2005-02-01 Texas Instruments Incorporated Fabrication of ultra shallow junctions from a solid source with fluorine implantation
US6891266B2 (en) * 2002-02-14 2005-05-10 Mia-Com RF transition for an area array package
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US6946371B2 (en) 2002-06-10 2005-09-20 Amberwave Systems Corporation Methods of fabricating semiconductor structures having epitaxially grown source and drain elements
US6982474B2 (en) 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
US6686247B1 (en) * 2002-08-22 2004-02-03 Intel Corporation Self-aligned contacts to gates
US6911695B2 (en) * 2002-09-19 2005-06-28 Intel Corporation Transistor having insulating spacers on gate sidewalls to reduce overlap between the gate and doped extension regions of the source and drain
CN100383935C (zh) * 2002-11-22 2008-04-23 南亚科技股份有限公司 源极/漏极元件的制造方法
CN100437970C (zh) 2003-03-07 2008-11-26 琥珀波系统公司 一种结构及用于形成半导体结构的方法
US7122408B2 (en) * 2003-06-16 2006-10-17 Micron Technology, Inc. Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation
KR100672679B1 (ko) * 2004-12-30 2007-01-22 동부일렉트로닉스 주식회사 시모스 이미지 센서의 광감지 소자 및 그의 제조방법
US7271044B2 (en) * 2005-07-21 2007-09-18 International Business Machines Corporation CMOS (complementary metal oxide semiconductor) technology
US7648871B2 (en) * 2005-10-21 2010-01-19 International Business Machines Corporation Field effect transistors (FETS) with inverted source/drain metallic contacts, and method of fabricating same
EP2072971A1 (en) 2007-12-17 2009-06-24 Services Pétroliers Schlumberger Variable throat venturi flow meter
US8796124B2 (en) 2011-10-25 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. Doping method in 3D semiconductor device
US8574995B2 (en) 2011-11-10 2013-11-05 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain doping method in 3D devices
US9455368B2 (en) * 2014-07-03 2016-09-27 Varian Semiconductor Equipment Associates, Inc. Method of forming an interdigitated back contact solar cell
CN109216273A (zh) 2017-07-06 2019-01-15 联华电子股份有限公司 半导体结构及其制造方法

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JPS63302518A (ja) * 1987-06-02 1988-12-09 Fujitsu Ltd 半導体装置の製造方法

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JPS5946107B2 (ja) * 1975-06-04 1984-11-10 株式会社日立製作所 Ｍｉｓ型半導体装置の製造法
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Also Published As

Publication number Publication date
JPH11509042A (ja) 1999-08-03
AU6406796A (en) 1997-02-05
US5976939A (en) 1999-11-02
KR19990028704A (ko) 1999-04-15
EP0838085A1 (en) 1998-04-29
WO1997002594A1 (en) 1997-01-23
TW306047B (enExample) 1997-05-21
CA2225926A1 (en) 1997-01-23
EP0838085A4 (en) 1998-10-28

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