KR100380844B1 - 액정유리기판의 화학연마 방법 및 화학연마장치 - Google Patents

액정유리기판의 화학연마 방법 및 화학연마장치 Download PDF

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Publication number
KR100380844B1
KR100380844B1 KR10-2001-0023329A KR20010023329A KR100380844B1 KR 100380844 B1 KR100380844 B1 KR 100380844B1 KR 20010023329 A KR20010023329 A KR 20010023329A KR 100380844 B1 KR100380844 B1 KR 100380844B1
Authority
KR
South Korea
Prior art keywords
chemical polishing
liquid crystal
glass substrate
crystal glass
liquid
Prior art date
Application number
KR10-2001-0023329A
Other languages
English (en)
Korean (ko)
Other versions
KR20020080215A (ko
Inventor
니시야마도모히로
데구치미키오
이토카와카쯔히로
오다니마코토
미조구치코이치
Original Assignee
니시야마 스테인레스 케미컬 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 니시야마 스테인레스 케미컬 가부시키가이샤 filed Critical 니시야마 스테인레스 케미컬 가부시키가이샤
Publication of KR20020080215A publication Critical patent/KR20020080215A/ko
Application granted granted Critical
Publication of KR100380844B1 publication Critical patent/KR100380844B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1313—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells specially adapted for a particular application
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
    • Y02W30/00—Technologies for solid waste management
    • Y02W30/50—Reuse, recycling or recovery technologies
    • Y02W30/52—Mechanical processing of waste for the recovery of materials, e.g. crushing, shredding, separation or disassembly
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
    • Y02W30/00—Technologies for solid waste management
    • Y02W30/50—Reuse, recycling or recovery technologies
    • Y02W30/60—Glass recycling
KR10-2001-0023329A 2001-04-12 2001-04-30 액정유리기판의 화학연마 방법 및 화학연마장치 KR100380844B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001114498 2001-04-12
JP2001-114498 2001-04-12

Publications (2)

Publication Number Publication Date
KR20020080215A KR20020080215A (ko) 2002-10-23
KR100380844B1 true KR100380844B1 (ko) 2003-04-18

Family

ID=18965559

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0023329A KR100380844B1 (ko) 2001-04-12 2001-04-30 액정유리기판의 화학연마 방법 및 화학연마장치

Country Status (4)

Country Link
KR (1) KR100380844B1 (zh)
CN (2) CN100462319C (zh)
SG (1) SG94843A1 (zh)
TW (1) TWI263079B (zh)

Cited By (1)

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CN103033403A (zh) * 2011-09-29 2013-04-10 鞍钢股份有限公司 一种薄板金属薄膜试样的制备方法

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SG121817A1 (en) * 2002-11-22 2006-05-26 Nishiyama Stainless Chemical Co Ltd Glass substrate for flat planel display, and process for producing the same
CN100343420C (zh) * 2004-07-21 2007-10-17 常耀辉 一种不锈钢表面快速化学研磨抛光浴液及方法
JP2007197236A (ja) * 2006-01-25 2007-08-09 Nishiyama Stainless Chem Kk ディスプレイ用ガラス基板の製造方法及びそのガラス基板
CN101089688B (zh) * 2006-06-14 2010-09-29 比亚迪股份有限公司 一种超薄液晶盒的制作方法
CN100392477C (zh) * 2006-07-07 2008-06-04 南京大学 液晶显示面板资源化处理方法
KR101233687B1 (ko) * 2010-10-28 2013-02-15 삼성디스플레이 주식회사 유리 기판 식각 장치
JP5829458B2 (ja) * 2011-08-25 2015-12-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN102643028A (zh) * 2012-05-14 2012-08-22 深圳市拓捷科技发展有限公司 一种玻璃薄化设备及方法
CN102701598B (zh) * 2012-06-26 2015-09-30 广东拓捷科技有限公司 一种改进的玻璃薄化设备
CN102701597B (zh) * 2012-06-26 2014-10-08 汕头市拓捷科技有限公司 一种快速的玻璃薄化设备
CN103046053B (zh) * 2012-09-21 2015-04-01 中国兵器工业第二一三研究所 高温氧化不锈钢的化学抛光方法
CN103508676A (zh) * 2013-07-24 2014-01-15 芜湖长信科技股份有限公司 一种避免液晶基板玻璃减薄工艺缺陷的方法及其酸液配置方法
TW201519308A (zh) * 2013-11-13 2015-05-16 Grand Plastic Technology Corp 循環式均勻蝕刻裝置
CN105541120A (zh) * 2015-12-28 2016-05-04 常熟市金亿复合材料有限公司 一种中空玻璃板的镀膜工艺
JP6323695B2 (ja) * 2016-09-30 2018-05-16 パナソニックＩｐマネジメント株式会社 ガラス用研磨液および研磨方法
CN107286853A (zh) * 2017-07-12 2017-10-24 天津津航技术物理研究所 一种微晶玻璃高光亮度化学抛光液及制备方法
CN107235641A (zh) * 2017-08-14 2017-10-10 湖北工程学院 一种玻璃减薄蚀刻液及其制备方法
CN107902914A (zh) * 2017-12-14 2018-04-13 天津美泰真空技术有限公司 一种玻璃基板薄化工艺蚀刻液
CN107814491A (zh) * 2017-12-14 2018-03-20 天津美泰真空技术有限公司 一种平板玻璃基板蚀刻液
CN109439329A (zh) * 2018-10-29 2019-03-08 苏州博洋化学股份有限公司 平板显示阵列制程用新型igzo蚀刻液
CN109111859A (zh) * 2018-10-30 2019-01-01 秦皇岛市大龙建材有限公司 玻璃抛光液
CN111029230B (zh) * 2019-12-13 2022-04-05 山西长城微光器材股份有限公司 微通道板通道内抛光方法
CN111925126A (zh) * 2020-08-12 2020-11-13 郑州恒昊光学科技有限公司 一种光学玻璃轻微划痕修复膏
CN116042098A (zh) * 2023-02-08 2023-05-02 广东粤港澳大湾区黄埔材料研究院 一种纳米氧化铝抛光液及在红外硫系玻璃抛光中的应用

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JPS5854974A (ja) * 1981-09-28 1983-04-01 三菱電機株式会社 ゴルフ練習器
JPH0641770A (ja) * 1992-07-27 1994-02-15 Daikin Ind Ltd シリコンウエハ表面の処理方法
EP0598394A3 (en) * 1992-11-16 1997-07-16 Tokyo Electron Ltd Method and apparatus for manufacturing a liquid crystal display substrate, and apparatus and method for evaluating semiconductor crystals.
JP3531961B2 (ja) * 1994-02-01 2004-05-31 横浜ゴム株式会社 スチールコードベルトのエンドレス加工方法及びそのエンドレス加工方法を実施するための冷却冷凍装置
JPH10109012A (ja) * 1996-10-04 1998-04-28 Stec Kk 生ゴミ処理の脱臭方法および脱臭装置
JPH11111658A (ja) * 1997-10-06 1999-04-23 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
US6174371B1 (en) * 1997-10-06 2001-01-16 Dainippon Screen Mfg. Co., Ltd. Substrate treating method and apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103033403A (zh) * 2011-09-29 2013-04-10 鞍钢股份有限公司 一种薄板金属薄膜试样的制备方法
CN103033403B (zh) * 2011-09-29 2015-09-02 鞍钢股份有限公司 一种薄板金属薄膜试样的制备方法

Also Published As

Publication number Publication date
TWI263079B (en) 2006-10-01
CN1277142C (zh) 2006-09-27
KR20020080215A (ko) 2002-10-23
CN1380572A (zh) 2002-11-20
CN1724432A (zh) 2006-01-25
SG94843A1 (en) 2003-03-18
CN100462319C (zh) 2009-02-18

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