KR100351545B1 - 리셋 동작을 고속화시킨 메모리 회로 - Google Patents

리셋 동작을 고속화시킨 메모리 회로 Download PDF

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Publication number
KR100351545B1
KR100351545B1 KR1019990018838A KR19990018838A KR100351545B1 KR 100351545 B1 KR100351545 B1 KR 100351545B1 KR 1019990018838 A KR1019990018838 A KR 1019990018838A KR 19990018838 A KR19990018838 A KR 19990018838A KR 100351545 B1 KR100351545 B1 KR 100351545B1
Authority
KR
South Korea
Prior art keywords
bit line
pair
clamper
sense amplifier
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019990018838A
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English (en)
Korean (ko)
Other versions
KR20000022636A (ko
Inventor
후지오카신야
사토야스하루
Original Assignee
후지쯔 가부시끼가이샤
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Application filed by 후지쯔 가부시끼가이샤 filed Critical 후지쯔 가부시끼가이샤
Publication of KR20000022636A publication Critical patent/KR20000022636A/ko
Application granted granted Critical
Publication of KR100351545B1 publication Critical patent/KR100351545B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
KR1019990018838A 1998-09-24 1999-05-25 리셋 동작을 고속화시킨 메모리 회로 Expired - Fee Related KR100351545B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP27026498A JP4413293B2 (ja) 1998-09-24 1998-09-24 リセット動作を高速化したメモリデバイス
JP10-270264 1998-09-24

Publications (2)

Publication Number Publication Date
KR20000022636A KR20000022636A (ko) 2000-04-25
KR100351545B1 true KR100351545B1 (ko) 2002-09-11

Family

ID=17483837

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990018838A Expired - Fee Related KR100351545B1 (ko) 1998-09-24 1999-05-25 리셋 동작을 고속화시킨 메모리 회로

Country Status (4)

Country Link
US (1) US6301173B2 (enExample)
JP (1) JP4413293B2 (enExample)
KR (1) KR100351545B1 (enExample)
TW (1) TW425553B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101789467B1 (ko) 2017-04-06 2017-10-23 국방과학연구소 의사 랜덤 이진 수열 발생기의 고속 리셋 장치

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4748828B2 (ja) * 1999-06-22 2011-08-17 ルネサスエレクトロニクス株式会社 半導体記憶装置
US6473356B1 (en) * 2001-11-01 2002-10-29 Virage Logic Corp. Low power read circuitry for a memory circuit based on charge redistribution between bitlines and sense amplifier
US7180792B2 (en) * 2002-02-28 2007-02-20 Stmicroelectronics Pvt. Ltd. Efficient latch array initialization
JP4462528B2 (ja) 2002-06-24 2010-05-12 株式会社日立製作所 半導体集積回路装置
DE10302650B4 (de) * 2003-01-23 2007-08-30 Infineon Technologies Ag RAM-Speicher und Steuerungsverfahren dafür
WO2004081945A1 (ja) * 2003-03-14 2004-09-23 Fujitsu Limited 半導体記憶装置、および半導体記憶装置の制御方法
US7245549B2 (en) 2003-03-14 2007-07-17 Fujitsu Limited Semiconductor memory device and method of controlling the semiconductor memory device
DE10339894B4 (de) * 2003-08-29 2006-04-06 Infineon Technologies Ag Leseverstärker-Zuschalt/Abschalt-Schaltungsanordnung
JP4646106B2 (ja) * 2004-05-25 2011-03-09 株式会社日立製作所 半導体集積回路装置
KR20060028989A (ko) * 2004-09-30 2006-04-04 엘지전자 주식회사 다중입출력 시스템에 적용되는 신호 처리 방법
DE102005000812A1 (de) * 2005-01-05 2006-07-20 Infineon Technologies Ag Integrierter Halbleiterspeicher mit Testschaltung für Leseverstärker
KR100736648B1 (ko) * 2005-03-08 2007-07-09 후지쯔 가부시끼가이샤 반도체 기억 장치 및 반도체 기억 장치의 제어 방법
US7212458B1 (en) * 2005-10-25 2007-05-01 Sigmatel, Inc. Memory, processing system and methods for use therewith
WO2007059772A2 (en) 2005-11-24 2007-05-31 Vip 1 Aps Direct sequential network addressing (dsna)
US7443751B2 (en) * 2006-12-22 2008-10-28 Qimonda North American Corp. Programmable sense amplifier multiplexer circuit with dynamic latching mode
JP4504397B2 (ja) 2007-05-29 2010-07-14 株式会社東芝 半導体記憶装置
KR100876900B1 (ko) * 2007-12-05 2009-01-07 주식회사 하이닉스반도체 센스 앰프와 그의 구동 방법
US7813209B2 (en) * 2008-10-01 2010-10-12 Nanya Technology Corp. Method for reducing power consumption in a volatile memory and related device
US11581033B2 (en) 2021-06-09 2023-02-14 Powerchip Semiconductor Manufacturing Corporation Sub-sense amplifier layout scheme to reduce area

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06243682A (ja) * 1993-02-19 1994-09-02 Hitachi Ltd ダイナミック型ｒａｍおよびそのデータ処理システム

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07130175A (ja) * 1993-09-10 1995-05-19 Toshiba Corp 半導体記憶装置
JP3862333B2 (ja) * 1996-12-10 2006-12-27 株式会社ルネサステクノロジ 半導体記憶装置
US5717645A (en) * 1997-02-07 1998-02-10 Alliance Semiconductor Corporation Random access memory with fast, compact sensing and selection architecture
JP3399787B2 (ja) * 1997-06-27 2003-04-21 富士通株式会社 半導体記憶装置
US5875141A (en) * 1997-08-14 1999-02-23 Micron Technology, Inc. Circuit and method for a memory device with P-channel isolation gates

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06243682A (ja) * 1993-02-19 1994-09-02 Hitachi Ltd ダイナミック型ｒａｍおよびそのデータ処理システム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101789467B1 (ko) 2017-04-06 2017-10-23 국방과학연구소 의사 랜덤 이진 수열 발생기의 고속 리셋 장치

Also Published As

Publication number Publication date
US6301173B2 (en) 2001-10-09
KR20000022636A (ko) 2000-04-25
TW425553B (en) 2001-03-11
JP2000100171A (ja) 2000-04-07
JP4413293B2 (ja) 2010-02-10
US20010015928A1 (en) 2001-08-23

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