KR100345361B1 - 박막트랜지스터및이것을구비한액정표시장치와tft어레이기판의제조방법 - Google Patents
박막트랜지스터및이것을구비한액정표시장치와tft어레이기판의제조방법 Download PDFInfo
- Publication number
- KR100345361B1 KR100345361B1 KR1019980036039A KR19980036039A KR100345361B1 KR 100345361 B1 KR100345361 B1 KR 100345361B1 KR 1019980036039 A KR1019980036039 A KR 1019980036039A KR 19980036039 A KR19980036039 A KR 19980036039A KR 100345361 B1 KR100345361 B1 KR 100345361B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- thin film
- film transistor
- less
- forming
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 41
- 239000010409 thin film Substances 0.000 title claims abstract description 32
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000010408 film Substances 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 45
- 238000005530 etching Methods 0.000 claims description 12
- 230000007261 regionalization Effects 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 2
- 230000003071 parasitic effect Effects 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 56
- 238000010586 diagram Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9243180A JPH1187721A (ja) | 1997-09-08 | 1997-09-08 | 薄膜トランジスタおよびこれを備えた液晶表示装置並びにｔｆｔアレイ基板の製造方法 |
| JP97-243180 | 1997-09-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19990029439A KR19990029439A (ko) | 1999-04-26 |
| KR100345361B1 true KR100345361B1 (ko) | 2002-12-18 |
Family
ID=17100019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019980036039A KR100345361B1 (ko) | 1997-09-08 | 1998-09-02 | 박막트랜지스터및이것을구비한액정표시장치와tft어레이기판의제조방법 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH1187721A (zh) |
| KR (1) | KR100345361B1 (zh) |
| TW (1) | TW400653B (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2692085B1 (fr) * | 1992-06-09 | 1997-04-04 | Alsthom Gec | Systeme de commande et d'autosurveillance, en particulier pour un appareil electrique multipolaire tel qu'un disjoncteur a haute tension. |
| KR100980020B1 (ko) | 2003-08-28 | 2010-09-03 | 삼성전자주식회사 | 박막 트랜지스터 표시판과 그 제조 방법 |
| US8080449B2 (en) | 2009-04-07 | 2011-12-20 | Hitachi Displays, Ltd. | Method for manufacturing thin-film transistors |
| GB2543101B (en) * | 2015-10-09 | 2022-09-14 | Flexenable Ltd | Lamination technique for producing electronic devices |
| KR102596354B1 (ko) * | 2018-11-05 | 2023-10-31 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
| CN112993041B (zh) * | 2021-02-03 | 2023-03-24 | 重庆先进光电显示技术研究院 | 一种液晶显示面板、薄膜晶体管及其制作方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2913300B2 (ja) * | 1985-09-26 | 1999-06-28 | セイコーインスツルメンツ株式会社 | 薄膜トランジスタ装置の製造方法 |
| JP2594971B2 (ja) * | 1987-09-09 | 1997-03-26 | カシオ計算機株式会社 | 薄膜トランジスタパネル |
| JP2978176B2 (ja) * | 1989-03-23 | 1999-11-15 | 松下電器産業株式会社 | アクティブマトリクス基板の製造方法及び表示装置の製造方法 |
| JPH04132263A (ja) * | 1990-09-21 | 1992-05-06 | Stanley Electric Co Ltd | 薄膜トランジスタおよびその製造方法 |
| JP3255942B2 (ja) * | 1991-06-19 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 逆スタガ薄膜トランジスタの作製方法 |
-
1997
- 1997-09-08 JP JP9243180A patent/JPH1187721A/ja active Pending
-
1998
- 1998-09-02 KR KR1019980036039A patent/KR100345361B1/ko not_active IP Right Cessation
- 1998-09-08 TW TW087114873A patent/TW400653B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1187721A (ja) | 1999-03-30 |
| KR19990029439A (ko) | 1999-04-26 |
| TW400653B (en) | 2000-08-01 |
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