JPH1187721A - 薄膜トランジスタおよびこれを備えた液晶表示装置並びにｔｆｔアレイ基板の製造方法 - Google Patents
薄膜トランジスタおよびこれを備えた液晶表示装置並びにｔｆｔアレイ基板の製造方法Info
- Publication number
- JPH1187721A JPH1187721A JP9243180A JP24318097A JPH1187721A JP H1187721 A JPH1187721 A JP H1187721A JP 9243180 A JP9243180 A JP 9243180A JP 24318097 A JP24318097 A JP 24318097A JP H1187721 A JPH1187721 A JP H1187721A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thickness
- forming
- film transistor
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 39
- 239000010409 thin film Substances 0.000 title claims abstract description 30
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000010408 film Substances 0.000 claims abstract description 41
- 238000001312 dry etching Methods 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 230000007261 regionalization Effects 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 26
- 230000003071 parasitic effect Effects 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 56
- 238000010586 diagram Methods 0.000 description 4
- 230000002542 deteriorative effect Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9243180A JPH1187721A (ja) | 1997-09-08 | 1997-09-08 | 薄膜トランジスタおよびこれを備えた液晶表示装置並びにｔｆｔアレイ基板の製造方法 |
| KR1019980036039A KR100345361B1 (ko) | 1997-09-08 | 1998-09-02 | 박막트랜지스터및이것을구비한액정표시장치와tft어레이기판의제조방법 |
| TW087114873A TW400653B (en) | 1997-09-08 | 1998-09-08 | Thin film transistor, LCD having thin film transistors, and method for making TFT array board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9243180A JPH1187721A (ja) | 1997-09-08 | 1997-09-08 | 薄膜トランジスタおよびこれを備えた液晶表示装置並びにｔｆｔアレイ基板の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1187721A true JPH1187721A (ja) | 1999-03-30 |
Family
ID=17100019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9243180A Pending JPH1187721A (ja) | 1997-09-08 | 1997-09-08 | 薄膜トランジスタおよびこれを備えた液晶表示装置並びにｔｆｔアレイ基板の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH1187721A (zh) |
| KR (1) | KR100345361B1 (zh) |
| TW (1) | TW400653B (zh) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2692085A1 (fr) * | 1992-06-09 | 1993-12-10 | Alsthom Gec | Système de commande et d'autosurveillance, en particulier pour un appareil électrique multipolaire tel qu'un disjoncteur à haute tension. |
| US7459323B2 (en) | 2003-08-28 | 2008-12-02 | Samsung Electronics Co., Ltd. | Method of manufacturing a thin film transistor array panel |
| US8080449B2 (en) | 2009-04-07 | 2011-12-20 | Hitachi Displays, Ltd. | Method for manufacturing thin-film transistors |
| KR20200051887A (ko) * | 2018-11-05 | 2020-05-14 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
| CN112993041A (zh) * | 2021-02-03 | 2021-06-18 | 重庆先进光电显示技术研究院 | 一种液晶显示面板、薄膜晶体管及其制作方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2543101B (en) * | 2015-10-09 | 2022-09-14 | Flexenable Ltd | Lamination technique for producing electronic devices |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6273670A (ja) * | 1985-09-26 | 1987-04-04 | Seiko Instr & Electronics Ltd | 薄膜トランジスタ装置の製造方法 |
| JPS6468728A (en) * | 1987-09-09 | 1989-03-14 | Casio Computer Co Ltd | Thin film transistor |
| JPH02250037A (ja) * | 1989-03-23 | 1990-10-05 | Matsushita Electric Ind Co Ltd | アクティブマトリクス基板の製造方法及び表示装置の製造方法 |
| JPH04132263A (ja) * | 1990-09-21 | 1992-05-06 | Stanley Electric Co Ltd | 薄膜トランジスタおよびその製造方法 |
| JPH0645354A (ja) * | 1991-06-19 | 1994-02-18 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ及びその作製方法 |
-
1997
- 1997-09-08 JP JP9243180A patent/JPH1187721A/ja active Pending
-
1998
- 1998-09-02 KR KR1019980036039A patent/KR100345361B1/ko not_active IP Right Cessation
- 1998-09-08 TW TW087114873A patent/TW400653B/zh not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6273670A (ja) * | 1985-09-26 | 1987-04-04 | Seiko Instr & Electronics Ltd | 薄膜トランジスタ装置の製造方法 |
| JPS6468728A (en) * | 1987-09-09 | 1989-03-14 | Casio Computer Co Ltd | Thin film transistor |
| JPH02250037A (ja) * | 1989-03-23 | 1990-10-05 | Matsushita Electric Ind Co Ltd | アクティブマトリクス基板の製造方法及び表示装置の製造方法 |
| JPH04132263A (ja) * | 1990-09-21 | 1992-05-06 | Stanley Electric Co Ltd | 薄膜トランジスタおよびその製造方法 |
| JPH0645354A (ja) * | 1991-06-19 | 1994-02-18 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ及びその作製方法 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2692085A1 (fr) * | 1992-06-09 | 1993-12-10 | Alsthom Gec | Système de commande et d'autosurveillance, en particulier pour un appareil électrique multipolaire tel qu'un disjoncteur à haute tension. |
| US5384678A (en) * | 1992-06-09 | 1995-01-24 | Gec Alsthom T & D Sa | Control and self-monitoring system, in particular for a multipole electrical apparatus such as a high tension circuit breaker |
| US7459323B2 (en) | 2003-08-28 | 2008-12-02 | Samsung Electronics Co., Ltd. | Method of manufacturing a thin film transistor array panel |
| US8080449B2 (en) | 2009-04-07 | 2011-12-20 | Hitachi Displays, Ltd. | Method for manufacturing thin-film transistors |
| KR20200051887A (ko) * | 2018-11-05 | 2020-05-14 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
| CN112993041A (zh) * | 2021-02-03 | 2021-06-18 | 重庆先进光电显示技术研究院 | 一种液晶显示面板、薄膜晶体管及其制作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100345361B1 (ko) | 2002-12-18 |
| KR19990029439A (ko) | 1999-04-26 |
| TW400653B (en) | 2000-08-01 |
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Legal Events
| Date | Code | Title | Description |
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| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20040427 |
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| A131 | Notification of reasons for refusal |
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