KR100340866B1 - 고전위 발생 장치 - Google Patents

고전위 발생 장치 Download PDF

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Publication number
KR100340866B1
KR100340866B1 KR1019990054393A KR19990054393A KR100340866B1 KR 100340866 B1 KR100340866 B1 KR 100340866B1 KR 1019990054393 A KR1019990054393 A KR 1019990054393A KR 19990054393 A KR19990054393 A KR 19990054393A KR 100340866 B1 KR100340866 B1 KR 100340866B1
Authority
KR
South Korea
Prior art keywords
potential
node
bootstrapping
power
voltage
Prior art date
Application number
KR1019990054393A
Other languages
English (en)
Korean (ko)
Other versions
KR20010053853A (ko
Inventor
김영희
구기봉
강병주
김경원
한영성
박종태
박홍준
Original Assignee
박종섭
주식회사 하이닉스반도체
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 박종섭, 주식회사 하이닉스반도체 filed Critical 박종섭
Priority to KR1019990054393A priority Critical patent/KR100340866B1/ko
Priority to US09/726,413 priority patent/US6356501B2/en
Priority to JP2000368730A priority patent/JP2001202783A/ja
Publication of KR20010053853A publication Critical patent/KR20010053853A/ko
Application granted granted Critical
Publication of KR100340866B1 publication Critical patent/KR100340866B1/ko
Priority to JP2009267019A priority patent/JP2010045413A/ja
Priority to JP2010137874A priority patent/JP2010226953A/ja

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019990054393A 1999-12-02 1999-12-02 고전위 발생 장치 KR100340866B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019990054393A KR100340866B1 (ko) 1999-12-02 1999-12-02 고전위 발생 장치
US09/726,413 US6356501B2 (en) 1999-12-02 2000-12-01 Apparatus for generating high voltage signal
JP2000368730A JP2001202783A (ja) 1999-12-02 2000-12-04 高電圧チャージポンプ回路および高電圧発生器
JP2009267019A JP2010045413A (ja) 1999-12-02 2009-11-25 半導体メモリ素子用高電圧発生器
JP2010137874A JP2010226953A (ja) 1999-12-02 2010-06-17 半導体メモリ素子用高電圧発生器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990054393A KR100340866B1 (ko) 1999-12-02 1999-12-02 고전위 발생 장치

Publications (2)

Publication Number Publication Date
KR20010053853A KR20010053853A (ko) 2001-07-02
KR100340866B1 true KR100340866B1 (ko) 2002-06-20

Family

ID=19623136

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990054393A KR100340866B1 (ko) 1999-12-02 1999-12-02 고전위 발생 장치

Country Status (3)

Country Link
US (1) US6356501B2 (ja)
JP (3) JP2001202783A (ja)
KR (1) KR100340866B1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7928795B2 (en) 2008-08-01 2011-04-19 Samsung Electronics Co., Ltd. Semiconductor device for charge pumping

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6356469B1 (en) * 2000-09-14 2002-03-12 Fairchild Semiconductor Corporation Low voltage charge pump employing optimized clock amplitudes
JP2003168288A (ja) * 2001-11-29 2003-06-13 Nec Microsystems Ltd 半導体昇圧回路、昇圧電源装置
KR100404001B1 (ko) * 2001-12-29 2003-11-05 주식회사 하이닉스반도체 차지 펌프 회로
KR100542708B1 (ko) * 2003-05-28 2006-01-11 주식회사 하이닉스반도체 고전압 발생기
KR100576924B1 (ko) * 2004-04-20 2006-05-03 주식회사 하이닉스반도체 고전압 발생 회로
KR100642631B1 (ko) * 2004-12-06 2006-11-10 삼성전자주식회사 전압 발생회로 및 이를 구비한 반도체 메모리 장치
KR100689828B1 (ko) * 2005-01-24 2007-03-08 삼성전자주식회사 고전압 발생회로 및 방법, 이를 구비한 반도체 메모리 장치
US7595682B2 (en) * 2005-02-24 2009-09-29 Macronix International Co., Ltd. Multi-stage charge pump without threshold drop with frequency modulation between embedded mode operations
KR100727440B1 (ko) * 2005-03-31 2007-06-13 주식회사 하이닉스반도체 내부전원 생성장치
TWI358884B (en) 2008-06-13 2012-02-21 Green Solution Tech Co Ltd Dc/dc converter circuit and charge pump controller
US8154333B2 (en) * 2009-04-01 2012-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Charge pump circuits, systems, and operational methods thereof
US9994741B2 (en) 2015-12-13 2018-06-12 International Business Machines Corporation Enhanced adhesive materials and processes for 3D applications
US10020041B1 (en) 2017-05-23 2018-07-10 Everspin Technologies, Inc. Self-referenced sense amplifier with precharge
CN109245755B (zh) * 2017-07-10 2024-04-09 兆易创新科技集团股份有限公司 一种高压逻辑电路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930008876B1 (ko) * 1990-08-17 1993-09-16 현대전자산업 주식회사 반도체소자의 고전압 발생회로
US5126590A (en) * 1991-06-17 1992-06-30 Micron Technology, Inc. High efficiency charge pump
JP3380823B2 (ja) * 1994-06-23 2003-02-24 三菱電機エンジニアリング株式会社 半導体記憶装置
JP3488587B2 (ja) * 1997-01-09 2004-01-19 株式会社東芝 昇圧回路及びこれを備えたｉｃカード
JPH10247386A (ja) * 1997-03-03 1998-09-14 Mitsubishi Electric Corp 昇圧電位供給回路及び半導体記憶装置
KR100280434B1 (ko) * 1998-01-23 2001-03-02 김영환 고전압발생회로

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7928795B2 (en) 2008-08-01 2011-04-19 Samsung Electronics Co., Ltd. Semiconductor device for charge pumping

Also Published As

Publication number Publication date
JP2010226953A (ja) 2010-10-07
US20010024376A1 (en) 2001-09-27
US6356501B2 (en) 2002-03-12
JP2010045413A (ja) 2010-02-25
KR20010053853A (ko) 2001-07-02
JP2001202783A (ja) 2001-07-27

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