KR100322470B1 - 고밀도 노어형 플래시 메모리 장치 및 그것의 프로그램 방법 - Google Patents

고밀도 노어형 플래시 메모리 장치 및 그것의 프로그램 방법 Download PDF

Info

Publication number
KR100322470B1
KR100322470B1 KR1019990029786A KR19990029786A KR100322470B1 KR 100322470 B1 KR100322470 B1 KR 100322470B1 KR 1019990029786 A KR1019990029786 A KR 1019990029786A KR 19990029786 A KR19990029786 A KR 19990029786A KR 100322470 B1 KR100322470 B1 KR 100322470B1
Authority
KR
South Korea
Prior art keywords
memory cells
program
columns
threshold voltage
flash memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019990029786A
Other languages
English (en)
Korean (ko)
Other versions
KR20010010734A (ko
Inventor
이두섭
Original Assignee
윤종용
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윤종용, 삼성전자 주식회사 filed Critical 윤종용
Priority to KR1019990029786A priority Critical patent/KR100322470B1/ko
Priority to JP2000184960A priority patent/JP3854042B2/ja
Priority to FR0009191A priority patent/FR2798218B1/fr
Priority to TW089114179A priority patent/TW526495B/zh
Priority to DE10034743A priority patent/DE10034743B4/de
Priority to US09/620,020 priority patent/US6212101B1/en
Priority to CN2004100335529A priority patent/CN1542858B/zh
Priority to CNB001216872A priority patent/CN1168095C/zh
Publication of KR20010010734A publication Critical patent/KR20010010734A/ko
Application granted granted Critical
Publication of KR100322470B1 publication Critical patent/KR100322470B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits

Landscapes

  • Read Only Memory (AREA)
KR1019990029786A 1999-07-22 1999-07-22 고밀도 노어형 플래시 메모리 장치 및 그것의 프로그램 방법 Expired - Fee Related KR100322470B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1019990029786A KR100322470B1 (ko) 1999-07-22 1999-07-22 고밀도 노어형 플래시 메모리 장치 및 그것의 프로그램 방법
JP2000184960A JP3854042B2 (ja) 1999-07-22 2000-06-20 フラッシュメモリ装置及びそのプログラム方法
FR0009191A FR2798218B1 (fr) 1999-07-22 2000-07-13 Dispositif de memoire flash du type nor haute densite et son procede de programmation
TW089114179A TW526495B (en) 1999-07-22 2000-07-15 High-density nor-type flash memory device and a program method thereof
DE10034743A DE10034743B4 (de) 1999-07-22 2000-07-18 Flash-Speicherbauelement und Programmierverfahren hierfür
US09/620,020 US6212101B1 (en) 1999-07-22 2000-07-20 High-density nor-type flash memory device and a program method thereof
CN2004100335529A CN1542858B (zh) 1999-07-22 2000-07-21 高密度“或非”型闪速存储装置和存储单元
CNB001216872A CN1168095C (zh) 1999-07-22 2000-07-21 高密度“或非”型闪速存储装置及其编程方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990029786A KR100322470B1 (ko) 1999-07-22 1999-07-22 고밀도 노어형 플래시 메모리 장치 및 그것의 프로그램 방법

Publications (2)

Publication Number Publication Date
KR20010010734A KR20010010734A (ko) 2001-02-15
KR100322470B1 true KR100322470B1 (ko) 2002-02-07

Family

ID=19603702

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990029786A Expired - Fee Related KR100322470B1 (ko) 1999-07-22 1999-07-22 고밀도 노어형 플래시 메모리 장치 및 그것의 프로그램 방법

Country Status (7)

Country Link
US (1) US6212101B1 (enExample)
JP (1) JP3854042B2 (enExample)
KR (1) KR100322470B1 (enExample)
CN (2) CN1168095C (enExample)
DE (1) DE10034743B4 (enExample)
FR (1) FR2798218B1 (enExample)
TW (1) TW526495B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60139670D1 (de) 2001-04-10 2009-10-08 St Microelectronics Srl Verfahren zur Programmierung nichtflüchtiger Speicherzellen mit Programmier- und Prüfalgorithmus unter Verwendung treppenförmiger Spannungsimpulse mit variablem Stufenabstand
US6434048B1 (en) 2001-07-20 2002-08-13 Hewlett-Packard Company Pulse train writing of worm storage device
US6781877B2 (en) * 2002-09-06 2004-08-24 Sandisk Corporation Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
KR100546343B1 (ko) * 2003-07-18 2006-01-26 삼성전자주식회사 플래시 메모리 장치의 프로그램 방법
KR100587702B1 (ko) * 2004-07-09 2006-06-08 삼성전자주식회사 피크 전류의 감소 특성을 갖는 상변화 메모리 장치 및그에 따른 데이터 라이팅 방법
US20060067127A1 (en) * 2004-09-30 2006-03-30 Matrix Semiconductor, Inc. Method of programming a monolithic three-dimensional memory
US7149119B2 (en) * 2004-09-30 2006-12-12 Matrix Semiconductor, Inc. System and method of controlling a three-dimensional memory
KR100645049B1 (ko) 2004-10-21 2006-11-10 삼성전자주식회사 프로그램 특성을 향상시킬 수 있는 불 휘발성 메모리 장치및 그것의 프로그램 방법
US7092290B2 (en) * 2004-11-16 2006-08-15 Sandisk Corporation High speed programming system with reduced over programming
JP2007213664A (ja) 2006-02-08 2007-08-23 Nec Electronics Corp 不揮発性半導体記憶装置、及び不揮発性半導体記憶装置の書込み方法
KR100771517B1 (ko) 2006-02-17 2007-10-30 삼성전자주식회사 칩 사이즈를 줄일 수 있는 플래시 메모리 장치
US7684247B2 (en) * 2006-09-29 2010-03-23 Sandisk Corporation Reverse reading in non-volatile memory with compensation for coupling
US7447076B2 (en) * 2006-09-29 2008-11-04 Sandisk Corporation Systems for reverse reading in non-volatile memory with compensation for coupling
US7606070B2 (en) * 2006-12-29 2009-10-20 Sandisk Corporation Systems for margined neighbor reading for non-volatile memory read operations including coupling compensation
US7518923B2 (en) 2006-12-29 2009-04-14 Sandisk Corporation Margined neighbor reading for non-volatile memory read operations including coupling compensation
KR100888844B1 (ko) * 2007-06-28 2009-03-17 삼성전자주식회사 프로그램 성능을 향상시킬 수 있는 플래시 메모리 장치 및그것의 프로그램 방법
KR101177278B1 (ko) * 2007-10-08 2012-08-24 삼성전자주식회사 비휘발성 메모리 셀 프로그래밍 방법
US7848144B2 (en) * 2008-06-16 2010-12-07 Sandisk Corporation Reverse order page writing in flash memories
KR101552209B1 (ko) * 2008-10-17 2015-09-11 삼성전자주식회사 멀티 비트를 프로그램하는 가변 저항 메모리 장치
CN102097130B (zh) * 2009-12-10 2014-03-05 辉芒微电子（深圳）有限公司 Eeprom擦写方法和装置
US8391073B2 (en) 2010-10-29 2013-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Adaptive control of programming currents for memory cells
US8391069B2 (en) * 2011-05-11 2013-03-05 Elite Semiconductor Memory Technology Inc. Programming method for nonvolatile semiconductor memory device
US9324438B2 (en) * 2013-08-05 2016-04-26 Jonker Llc Method of operating incrementally programmable non-volatile memory
CN109427399A (zh) * 2017-08-31 2019-03-05 北京兆易创新科技股份有限公司 一种NOR Flash的编程方法和编程装置
CN111798905B (zh) * 2020-07-01 2021-03-16 深圳市芯天下技术有限公司 减少非型闪存编程时间的方法、系统、存储介质和终端
CN114203242B (zh) * 2021-12-02 2024-11-29 普冉半导体(上海)股份有限公司 Nor型闪存编程电路
TWI882752B (zh) * 2024-04-01 2025-05-01 華邦電子股份有限公司 程式化電壓供應器以及程式化電壓的產生方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07169284A (ja) * 1993-12-13 1995-07-04 Toshiba Corp 不揮発性半導体記憶装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5537350A (en) * 1993-09-10 1996-07-16 Intel Corporation Method and apparatus for sequential programming of the bits in a word of a flash EEPROM memory array
KR0170296B1 (ko) * 1995-09-19 1999-03-30 김광호 비휘발성 메모리소자
KR100252476B1 (ko) * 1997-05-19 2000-04-15 윤종용 플레이트 셀 구조의 전기적으로 소거 및 프로그램 가능한 셀들을 구비한 불 휘발성 반도체 메모리 장치및 그것의 프로그램 방법
GB2325546B (en) * 1997-05-21 2001-10-17 Motorola Inc Electrically programmable memory and method of programming

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07169284A (ja) * 1993-12-13 1995-07-04 Toshiba Corp 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
TW526495B (en) 2003-04-01
DE10034743B4 (de) 2006-08-31
CN1168095C (zh) 2004-09-22
FR2798218B1 (fr) 2007-04-27
JP3854042B2 (ja) 2006-12-06
KR20010010734A (ko) 2001-02-15
CN1282077A (zh) 2001-01-31
US6212101B1 (en) 2001-04-03
DE10034743A1 (de) 2001-02-15
CN1542858B (zh) 2010-05-26
CN1542858A (zh) 2004-11-03
JP2001052486A (ja) 2001-02-23
FR2798218A1 (fr) 2001-03-09

Similar Documents

Publication Publication Date Title
KR100322470B1 (ko) 고밀도 노어형 플래시 메모리 장치 및 그것의 프로그램 방법
KR100332001B1 (ko) 반도체불휘발성기억장치
US7978533B2 (en) NAND flash memory with a programming voltage held dynamically in a NAND chain channel region
KR100322824B1 (ko) 반도체불휘발성기억장치
US6845045B1 (en) Background operation for memory cells
US5774397A (en) Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state
CN101136249B (zh) 能够基于操作模式产生不同电压的电压产生电路
KR100290283B1 (ko) 불휘발성 반도체 메모리 장치 및 그의 워드 라인 구동 방법
KR100566848B1 (ko) 불휘발성 반도체 기억 장치
KR100423894B1 (ko) 저전압 반도체 메모리 장치
JP3662725B2 (ja) 単一ビットセル及び多量ビットセル動作の同時的な遂行が可能な不揮発性半導体メモリ装置
US6256702B1 (en) Nonvolatile memory device with extended storage and high reliability through writing the same data into two memory cells
KR100338549B1 (ko) 고밀도 노어형 플래시 메모리 장치 및 그것의 프로그램 방법
JPH04192196A (ja) 不揮発性半導体記憶装置
JP2000124429A (ja) 不揮発性半導体記憶装置

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20111229

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20130117

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20130117

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000