KR100320774B1 - 전기적고체장치및그장치의제조방법 - Google Patents

전기적고체장치및그장치의제조방법 Download PDF

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Publication number
KR100320774B1
KR100320774B1 KR1019970038258A KR19970038258A KR100320774B1 KR 100320774 B1 KR100320774 B1 KR 100320774B1 KR 1019970038258 A KR1019970038258 A KR 1019970038258A KR 19970038258 A KR19970038258 A KR 19970038258A KR 100320774 B1 KR100320774 B1 KR 100320774B1
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South Korea
Prior art keywords
thin film
group
amorphous thin
film
amorphous
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Expired - Fee Related
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KR1019970038258A
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English (en)
Korean (ko)
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KR19980018584A (ko
Inventor
히로시 도요다
준이치 와다
마사히코 하수누마
히사시 가네코
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니시무로 타이죠
가부시끼가이샤 도시바
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Publication of KR19980018584A publication Critical patent/KR19980018584A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1019970038258A 1996-08-13 1997-08-12 전기적고체장치및그장치의제조방법 Expired - Fee Related KR100320774B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP96-229444 1996-08-13
JP8229444A JPH1064907A (ja) 1996-08-13 1996-08-13 電気的固体装置及びその製造方法

Publications (2)

Publication Number Publication Date
KR19980018584A KR19980018584A (ko) 1998-06-05
KR100320774B1 true KR100320774B1 (ko) 2002-06-20

Family

ID=16892314

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970038258A Expired - Fee Related KR100320774B1 (ko) 1996-08-13 1997-08-12 전기적고체장치및그장치의제조방법

Country Status (3)

Country Link
US (1) US6054770A (enExample)
JP (1) JPH1064907A (enExample)
KR (1) KR100320774B1 (enExample)

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JPH11340228A (ja) * 1998-05-28 1999-12-10 Fujitsu Ltd Ａｌ合金配線を有する半導体装置
US10047430B2 (en) 1999-10-08 2018-08-14 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US8696875B2 (en) * 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
JP3408527B2 (ja) * 2000-10-26 2003-05-19 松下電器産業株式会社 半導体装置の製造方法
US7504006B2 (en) * 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US6800938B2 (en) * 2002-08-08 2004-10-05 International Business Machines Corporation Semiconductor device having amorphous barrier layer for copper metallurgy
KR100883041B1 (ko) * 2002-11-08 2009-02-09 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조 방법
US6762501B1 (en) * 2003-04-14 2004-07-13 Texas Instruments Incorporated Low stress integrated circuit copper interconnect structures
US7323805B2 (en) * 2004-01-28 2008-01-29 Kabushiki Kaisha Toshiba Piezoelectric thin film device and method for manufacturing the same
US7227266B2 (en) * 2004-11-09 2007-06-05 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure to reduce stress induced voiding effect
JP2007214480A (ja) * 2006-02-13 2007-08-23 Showa Denko Kk ＧａＮ系半導体発光素子およびその製造方法
JP4970808B2 (ja) * 2006-03-01 2012-07-11 昭和電工株式会社 ＧａＮ系半導体発光素子およびその製造方法
JP2008227274A (ja) * 2007-03-14 2008-09-25 Nec Electronics Corp 半導体装置の製造方法
WO2009128575A1 (en) * 2008-04-17 2009-10-22 University Of Ulsan Foundation For Industry Cooperation Low temperature polycrystalline growth
US20110140173A1 (en) * 2009-12-16 2011-06-16 National Semiconductor Corporation Low OHMIC contacts containing germanium for gallium nitride or other nitride-based power devices
JP6346595B2 (ja) 2015-08-25 2018-06-20 東芝メモリ株式会社 半導体装置及びその製造方法
CN108962921B (zh) * 2017-05-18 2021-03-16 中芯国际集成电路制造(上海)有限公司 半导体装置及其制造方法
JP7166776B2 (ja) * 2018-04-04 2022-11-08 キヤノン株式会社 液体吐出ヘッド用基板の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3743894A (en) * 1972-06-01 1973-07-03 Motorola Inc Electromigration resistant semiconductor contacts and the method of producing same
JPH0779136B2 (ja) * 1986-06-06 1995-08-23 株式会社日立製作所 半導体装置
JPS63316456A (ja) * 1987-06-19 1988-12-23 Hitachi Ltd 半導体装置およびその製造方法
JP2680468B2 (ja) * 1989-07-01 1997-11-19 株式会社東芝 半導体装置および半導体装置の製造方法
US4970176A (en) * 1989-09-29 1990-11-13 Motorola, Inc. Multiple step metallization process
JP2937613B2 (ja) * 1991-07-16 1999-08-23 日本電気株式会社 薄膜配線およびその製造方法
JP3033331B2 (ja) * 1992-02-10 2000-04-17 日本電気株式会社 薄膜配線の製造方法
JP3332456B2 (ja) * 1992-03-24 2002-10-07 株式会社東芝 半導体装置の製造方法及び半導体装置
JPH06268083A (ja) * 1993-03-11 1994-09-22 Sony Corp 半導体装置の配線
US5705429A (en) * 1993-10-04 1998-01-06 Yamaha Corporation Method of manufacturing aluminum wiring at a substrate temperature from 100 to 150 degrees celsius
JP3277098B2 (ja) * 1994-07-26 2002-04-22 株式会社東芝 半導体装置の製造方法
JPH0878659A (ja) * 1994-09-02 1996-03-22 Sanyo Electric Co Ltd 半導体デバイス及びその製造方法
US5580823A (en) * 1994-12-15 1996-12-03 Motorola, Inc. Process for fabricating a collimated metal layer and contact structure in a semiconductor device

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Publication number Publication date
KR19980018584A (ko) 1998-06-05
US6054770A (en) 2000-04-25
JPH1064907A (ja) 1998-03-06

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