JP2009517331A - 圧縮応力を用いたナノワイヤ製造方法 - Google Patents
圧縮応力を用いたナノワイヤ製造方法 Download PDFInfo
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- JP2009517331A JP2009517331A JP2008552248A JP2008552248A JP2009517331A JP 2009517331 A JP2009517331 A JP 2009517331A JP 2008552248 A JP2008552248 A JP 2008552248A JP 2008552248 A JP2008552248 A JP 2008552248A JP 2009517331 A JP2009517331 A JP 2009517331A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/12—Single-crystal growth directly from the solid state by pressure treatment during the growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
Abstract
【選択図】図1
Description
該基板の上に該基板との熱膨張係数の差が2x10−6/℃以上の物質の薄膜を設けるステップと、
該薄膜の設けられた基板を熱処理して、該膜に該基板との熱膨張係数の差による引張応力を引き起こすステップと、
該基板を冷却させることによって該膜に圧縮応力が引き起こされ、該物質の単結晶ナノワイヤが成長するようにするステップ
とを含む、圧縮応力を用いたナノワイヤ製造方法。
該中間層と熱膨張係数の差が2x10−6/℃以上の物質の薄膜を該中間層の上に設けるステップと、
該薄膜の設けられた基板を熱処理し、該膜に該基板との熱膨張係数の差による引張応力を引き起こすステップと、
該基板を冷却させることによって、該膜に圧縮応力が引き起こされ、該物質の単結晶ナノワイヤが成長するようにするステップ
とを含む圧縮応力を用いたナノワイヤ製造方法。
Claims (21)
- 中間層がその上に設けられた基板を提供するステップと、
前記中間層との熱膨張係数の差が2x10−6/℃以上の物質の薄膜を前記中間層の上に設けるステップと、
前記薄膜の設けられた基板を熱処理して、前記膜に基板との熱膨張係数の差による引張応力を引き起こすステップと、
前記基板を冷却させることによって前記膜に圧縮応力が引き起こされ、前記物質の単結晶ナノワイヤが成長するようにするステップとを含む、圧縮応力を用いたナノワイヤ製造方法。 - 前記薄膜を構成する物質がBiである、請求項1に記載の圧縮応力を用いたナノワイヤ製造方法。
- 前記薄膜の蒸着がスパッタリングにより行われる、請求項1または2に記載の圧縮応力を用いたナノワイヤ製造方法。
- 前記薄膜を構成する物質がBixAl−xであり、前記AがTe、Se、Sbのうちのいずれか一つである、請求項1に記載の圧縮応力を用いたナノワイヤ製造方法。
- 前記xが0.33〜0.55である、請求項4に記載の圧縮応力を用いたナノワイヤ製造方法。
- 前記x=0.4であり、前記薄膜を構成する物質がBi2Te3である、請求項5に記載の圧縮応力を用いたナノワイヤ製造方法。
- 前記薄膜の厚さが10nm〜4μmであることを特徴とする、請求項1に記載の圧縮応力を用いるナノワイヤ製造方法。
- 前記基板がSi基板である、請求項1に記載の圧縮応力を用いたナノワイヤ製造方法。
- 前記中間層が酸化物層である、請求項1に記載の圧縮応力を用いたナノワイヤ製造方法。
- 前記酸化物がSiO2、Al2O3、BeO、Mg2Al4Si5O18のうちのいずれか一つである、請求項9に記載の圧縮応力を用いたナノワイヤ製造方法。
- 前記ナノワイヤ表面に設けられる酸化物を除去するステップを、さらに含む、請求項1に記載の圧縮応力を用いたナノワイヤ製造方法。
- 前記酸化物層の除去がプラズマエッチングにより行われる、請求項11に記載の圧縮応力を用いたナノワイヤ製造方法。
- 前記プラズマエッチングが電力10〜100W、圧力2〜3mTorr、距離5〜10cmの条件で5〜12分間行われる、請求項12に記載の圧縮応力を用いたナノワイヤ製造方法。
- 前記熱処理が100〜1000℃で行われる、請求項1に記載の圧縮応力を用いたナノワイヤ製造方法。
- 前記熱処理が0.5〜15時間の間行われる、請求項1に記載の圧縮応力を用いたナノワイヤ製造方法。
- 前記ナノワイヤの直径が32〜1000nmである、請求項1に記載の圧縮応力を用いたナノワイヤ製造方法。
- 前記薄膜の上に、前記薄膜からナノワイヤが上方に成長することを防ぐためのバリア層を設けるステップをさらに含む、請求項1に記載の圧縮応力を用いたナノワイヤ製造方法。
- 前記バリア層の材料がSiO2、CrまたはWのうちのいずれか一つである、請求項17に記載の圧縮応力を用いたナノワイヤ製造方法。
- 前記薄膜が(00l)方向(lは整数)に配向している、請求項1に記載の圧縮応力を用いたナノワイヤ製造方法。
- 形成される薄膜の結晶粒を微細化するために、前記基板が冷却された状態で薄膜を設ける、請求項1に記載の圧縮応力を用いたナノワイヤ製造方法。
- 基板を提供するステップと、
前記基板の上に該基板との熱膨張係数の差が2x10−6/℃以上の物質の薄膜を設けるステップと、
前記薄膜の設けられた基板を熱処理して、前記膜に前記基板との熱膨張係数の差による引張応力を引き起こすステップと、
前記基板を冷却させることによって前記膜に圧縮応力が引き起こされ、前記物質の単結晶ナノワイヤが成長するようにするステップ
とを含む、圧縮応力を用いたナノワイヤ製造方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060137069A KR100821267B1 (ko) | 2006-12-28 | 2006-12-28 | 압축 응력을 이용한 Bi 나노와이어 제조방법 |
KR10-2006-0137069 | 2006-12-28 | ||
KR10-2007-0051236 | 2007-05-28 | ||
KR1020070051236A KR100872332B1 (ko) | 2007-05-28 | 2007-05-28 | 인장응력을 이용한 단결정 열전 나노선 제조 방법 |
PCT/KR2007/006944 WO2008082186A1 (en) | 2006-12-28 | 2007-12-28 | Method for manufacturing nanowire by using stress-induced growth |
Publications (2)
Publication Number | Publication Date |
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JP2009517331A true JP2009517331A (ja) | 2009-04-30 |
JP4784947B2 JP4784947B2 (ja) | 2011-10-05 |
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JP2008552248A Expired - Fee Related JP4784947B2 (ja) | 2006-12-28 | 2007-12-28 | 圧縮応力を用いたナノワイヤ製造方法 |
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Country | Link |
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US (1) | US20100221894A1 (ja) |
EP (1) | EP2238274A4 (ja) |
JP (1) | JP4784947B2 (ja) |
WO (1) | WO2008082186A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009035474A (ja) * | 2007-07-09 | 2009-02-19 | Korea Advanced Inst Of Sci Technol | 二元合金単結晶ナノ構造体及びその製造方法 |
JP2010166053A (ja) * | 2009-01-14 | 2010-07-29 | Industry-Academic Cooperation Foundation Yonsei Univ | 熱電のナノワイヤ及びその製造方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100943977B1 (ko) * | 2008-01-24 | 2010-02-26 | 한국과학기술원 | 비스무트 단결정 나노와이어의 제조방법 |
EP2432729B1 (en) * | 2009-05-19 | 2021-01-13 | Howard University | Nanothermocouple detector based on thermoelectric nanowires |
US20110049473A1 (en) | 2009-08-28 | 2011-03-03 | International Business Machines Corporation | Film Wrapped NFET Nanowire |
KR101303859B1 (ko) * | 2011-11-24 | 2013-09-04 | 연세대학교 산학협력단 | 코어/쉘 구조를 갖는 열전 나노와이어의 제조 방법 |
CN105177501B (zh) * | 2015-07-24 | 2017-07-28 | 中国科学院合肥物质科学研究院 | 铋纳米孔阵列薄膜及其制备方法 |
US10347538B2 (en) * | 2017-06-30 | 2019-07-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for direct forming stressor, semiconductor device having stressor, and method for forming the same |
US11864472B2 (en) * | 2020-07-10 | 2024-01-02 | California Institute Of Technology | Methods and systems for atomic layer etching and atomic layer deposition |
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US5561079A (en) * | 1994-12-16 | 1996-10-01 | General Motors Corporation | Stalagraphy |
JP3133922B2 (ja) * | 1995-06-09 | 2001-02-13 | シャープ株式会社 | 強誘電体薄膜被覆基板、その製造方法、及びキャパシタ構造素子 |
US5712187A (en) * | 1995-11-09 | 1998-01-27 | Midwest Research Institute | Variable temperature semiconductor film deposition |
US6538367B1 (en) * | 1999-07-15 | 2003-03-25 | Agere Systems Inc. | Field emitting device comprising field-concentrating nanoconductor assembly and method for making the same |
JP2001053061A (ja) * | 1999-08-06 | 2001-02-23 | Hitachi Ltd | ドライエッチング方法 |
KR101008294B1 (ko) * | 2001-03-30 | 2011-01-13 | 더 리전트 오브 더 유니버시티 오브 캘리포니아 | 나노구조체 및 나노와이어의 제조 방법 및 그로부터 제조되는 디바이스 |
US7098393B2 (en) * | 2001-05-18 | 2006-08-29 | California Institute Of Technology | Thermoelectric device with multiple, nanometer scale, elements |
US6841235B2 (en) * | 2002-10-11 | 2005-01-11 | General Motors Corporation | Metallic nanowire and method of making the same |
US7001669B2 (en) * | 2002-12-23 | 2006-02-21 | The Administration Of The Tulane Educational Fund | Process for the preparation of metal-containing nanostructured films |
KR100661640B1 (ko) * | 2004-09-03 | 2006-12-27 | 학교법인 포항공과대학교 | 실리콘 카바이드 나노선의 제조방법 |
KR101138865B1 (ko) * | 2005-03-09 | 2012-05-14 | 삼성전자주식회사 | 나노 와이어 및 그 제조 방법 |
-
2006
- 2006-12-28 US US12/064,861 patent/US20100221894A1/en not_active Abandoned
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2007
- 2007-12-28 WO PCT/KR2007/006944 patent/WO2008082186A1/en active Application Filing
- 2007-12-28 JP JP2008552248A patent/JP4784947B2/ja not_active Expired - Fee Related
- 2007-12-28 EP EP07855359A patent/EP2238274A4/en not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009035474A (ja) * | 2007-07-09 | 2009-02-19 | Korea Advanced Inst Of Sci Technol | 二元合金単結晶ナノ構造体及びその製造方法 |
JP2010166053A (ja) * | 2009-01-14 | 2010-07-29 | Industry-Academic Cooperation Foundation Yonsei Univ | 熱電のナノワイヤ及びその製造方法 |
Also Published As
Publication number | Publication date |
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EP2238274A4 (en) | 2011-10-26 |
US20100221894A1 (en) | 2010-09-02 |
EP2238274A1 (en) | 2010-10-13 |
WO2008082186A1 (en) | 2008-07-10 |
JP4784947B2 (ja) | 2011-10-05 |
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