KR100298983B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR100298983B1
KR100298983B1 KR1019980015348A KR19980015348A KR100298983B1 KR 100298983 B1 KR100298983 B1 KR 100298983B1 KR 1019980015348 A KR1019980015348 A KR 1019980015348A KR 19980015348 A KR19980015348 A KR 19980015348A KR 100298983 B1 KR100298983 B1 KR 100298983B1
Authority
KR
South Korea
Prior art keywords
region
input
output protection
protection circuit
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019980015348A
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English (en)
Korean (ko)
Other versions
KR19990036477A (ko
Inventor
야스오 야마구치
다카시 이포시
Original Assignee
다니구찌 이찌로오, 기타오카 다카시
미쓰비시덴키 가부시키가이샤
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Publication date
Application filed by 다니구찌 이찌로오, 기타오카 다카시, 미쓰비시덴키 가부시키가이샤 filed Critical 다니구찌 이찌로오, 기타오카 다카시
Publication of KR19990036477A publication Critical patent/KR19990036477A/ko
Application granted granted Critical
Publication of KR100298983B1 publication Critical patent/KR100298983B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1019980015348A 1997-10-09 1998-04-29 반도체 장치 Expired - Fee Related KR100298983B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP277133 1997-10-09
JP27713397A JP4054093B2 (ja) 1997-10-09 1997-10-09 半導体装置

Publications (2)

Publication Number Publication Date
KR19990036477A KR19990036477A (ko) 1999-05-25
KR100298983B1 true KR100298983B1 (ko) 2001-10-19

Family

ID=17579260

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980015348A Expired - Fee Related KR100298983B1 (ko) 1997-10-09 1998-04-29 반도체 장치

Country Status (6)

Country Link
US (1) US6274908B1 (enExample)
EP (2) EP1267407A3 (enExample)
JP (1) JP4054093B2 (enExample)
KR (1) KR100298983B1 (enExample)
DE (1) DE69809694T2 (enExample)
TW (1) TW388128B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11769453B2 (en) 2021-12-29 2023-09-26 Samsung Display Co., Ltd. Electrostatic discharge circuit and display device including the same

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US6137143A (en) * 1998-06-30 2000-10-24 Intel Corporation Diode and transistor design for high speed I/O
FR2803099B1 (fr) 1999-12-22 2002-08-16 St Microelectronics Sa Dispositif de protection d'une structure soi
DE10014384B4 (de) 2000-03-23 2005-11-03 Infineon Technologies Ag Mittels Feldeffekt steuerbare Halbleiteranordnung mit lateral verlaufender Kanalzone
TW441074B (en) * 2000-04-15 2001-06-16 United Microelectronics Corp Electrostatic discharge protection circuit structure for high voltage device
TW446192U (en) * 2000-05-04 2001-07-11 United Microelectronics Corp Electrostatic discharge protection circuit
DE10022367C2 (de) * 2000-05-08 2002-05-08 Micronas Gmbh ESD-Schutzstruktur und Verfahren zur Herstellung
AU2002225999A1 (en) * 2001-01-31 2002-08-12 Advanced Micro Devices, Inc. Partially silicide diode and method of manufacture
US6462381B1 (en) * 2001-02-22 2002-10-08 Advanced Micro Devices, Inc. Silicon-on-insulator (SOI) electrostatic discharge (ESD) protection device with backside contact opening
US6589823B1 (en) 2001-02-22 2003-07-08 Advanced Micro Devices, Inc. Silicon-on-insulator (SOI)electrostatic discharge (ESD) protection device with backside contact plug
JP2003031669A (ja) * 2001-07-13 2003-01-31 Ricoh Co Ltd 半導体装置
US6611025B2 (en) * 2001-09-05 2003-08-26 Winbond Electronics Corp. Apparatus and method for improved power bus ESD protection
US6693783B2 (en) * 2002-04-08 2004-02-17 Exar Corporation Bounce tolerant fuse trimming circuit with controlled timing
US6582997B1 (en) * 2002-05-17 2003-06-24 Taiwan Semiconductor Manufacturing Company ESD protection scheme for outputs with resistor loading
JP4224588B2 (ja) * 2002-05-24 2009-02-18 独立行政法人産業技術総合研究所 電気信号伝送線路
DE10314505B4 (de) 2003-03-31 2009-05-07 Advanced Micro Devices, Inc., Sunnyvale Verbesserte Diodenstruktur für Soi-Schaltungen
DE10344849B3 (de) * 2003-09-26 2005-07-21 Infineon Technologies Ag Integrierte Schaltung mit Schutz vor elektrostatischer Entladung
US7067883B2 (en) * 2003-10-31 2006-06-27 Lattice Semiconductor Corporation Lateral high-voltage junction device
JP2005191161A (ja) * 2003-12-25 2005-07-14 Oki Electric Ind Co Ltd 半導体装置
JP5154000B2 (ja) * 2005-05-13 2013-02-27 ラピスセミコンダクタ株式会社 半導体装置
US7863610B2 (en) * 2007-08-22 2011-01-04 Qimonda North America Corp. Integrated circuit including silicide region to inhibit parasitic currents
JP2009283610A (ja) * 2008-05-21 2009-12-03 Elpida Memory Inc Ｅｓｄ保護回路
CN102110671B (zh) * 2009-12-29 2013-01-02 中芯国际集成电路制造(上海)有限公司 静电放电保护装置
JP2014056972A (ja) * 2012-09-13 2014-03-27 Ricoh Co Ltd 静電破壊保護回路及び半導体集積回路
JP6243720B2 (ja) * 2013-02-06 2017-12-06 エスアイアイ・セミコンダクタ株式会社 Ｅｓｄ保護回路を備えた半導体装置
JP6146165B2 (ja) * 2013-07-01 2017-06-14 セイコーエプソン株式会社 静電気保護回路、電気光学装置、及び電子機器
CN103944154A (zh) * 2013-12-11 2014-07-23 厦门天马微电子有限公司 一种静电保护电路及液晶显示器
JP6300659B2 (ja) * 2014-06-19 2018-03-28 株式会社東芝 半導体装置
FR3051969A1 (fr) 2016-05-31 2017-12-01 Stmicroelectronics Rousset Procede de fabrication de diodes de puissance, en particulier pour former un pont de graetz, et dispositif correspondant
KR20190140216A (ko) * 2018-06-11 2019-12-19 에스케이하이닉스 주식회사 Esd 보호 회로를 포함하는 반도체 집적 회로 장치
JP7396774B2 (ja) * 2019-03-26 2023-12-12 ラピスセミコンダクタ株式会社 論理回路
TWI713279B (zh) * 2019-05-17 2020-12-11 明基電通股份有限公司 過電流保護系統
US10971633B2 (en) 2019-09-04 2021-04-06 Stmicroelectronics (Rousset) Sas Structure and method of forming a semiconductor device
CN114582282B (zh) * 2022-03-30 2023-07-25 武汉华星光电半导体显示技术有限公司 Esd保护电路及显示装置
KR20230143662A (ko) 2022-04-05 2023-10-13 삼성디스플레이 주식회사 표시 패널 및 그것을 포함하는 표시 장치
WO2025048773A1 (en) * 2023-08-25 2025-03-06 Viasat, Inc. Diode-less electrostatic discharge protection circuit
CN118137982A (zh) * 2024-02-05 2024-06-04 南通至晟微电子技术有限公司 一体化限幅低噪声放大器电路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4989057A (en) * 1988-05-26 1991-01-29 Texas Instruments Incorporated ESD protection for SOI circuits

Family Cites Families (12)

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JPH0758734B2 (ja) * 1987-02-23 1995-06-21 株式会社東芝 絶縁ゲ−ト型セミカスタム集積回路
JPH02260459A (ja) 1989-03-30 1990-10-23 Ricoh Co Ltd 入力保護回路
KR940004449B1 (ko) 1990-03-02 1994-05-25 가부시키가이샤 도시바 반도체장치
US5283449A (en) 1990-08-09 1994-02-01 Nec Corporation Semiconductor integrated circuit device including two types of MOSFETS having source/drain region different in sheet resistance from each other
JP3244581B2 (ja) 1993-12-29 2002-01-07 株式会社リコー デュアルゲート型ｃｍｏｓ半導体装置
JPH0837284A (ja) 1994-07-21 1996-02-06 Nippondenso Co Ltd 半導体集積回路装置
JPH08195443A (ja) 1995-01-18 1996-07-30 Fujitsu Ltd 半導体装置及びその製造方法
US5610790A (en) 1995-01-20 1997-03-11 Xilinx, Inc. Method and structure for providing ESD protection for silicon on insulator integrated circuits
US5629544A (en) * 1995-04-25 1997-05-13 International Business Machines Corporation Semiconductor diode with silicide films and trench isolation
JPH098331A (ja) * 1995-06-23 1997-01-10 Mitsubishi Electric Corp Ｓｏｉ入力保護回路
JP3717227B2 (ja) 1996-03-29 2005-11-16 株式会社ルネサステクノロジ 入力／出力保護回路
US5818086A (en) * 1996-06-11 1998-10-06 Winbond Electronics Corporation Reinforced ESD protection for NC-pin adjacent input pin

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4989057A (en) * 1988-05-26 1991-01-29 Texas Instruments Incorporated ESD protection for SOI circuits

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11769453B2 (en) 2021-12-29 2023-09-26 Samsung Display Co., Ltd. Electrostatic discharge circuit and display device including the same

Also Published As

Publication number Publication date
JPH11121750A (ja) 1999-04-30
EP1267407A2 (en) 2002-12-18
US6274908B1 (en) 2001-08-14
TW388128B (en) 2000-04-21
KR19990036477A (ko) 1999-05-25
EP1267407A3 (en) 2005-05-11
EP0923132A1 (en) 1999-06-16
JP4054093B2 (ja) 2008-02-27
DE69809694T2 (de) 2003-07-10
EP0923132B1 (en) 2002-11-27
DE69809694D1 (de) 2003-01-09

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