TW388128B - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- TW388128B TW388128B TW087105145A TW87105145A TW388128B TW 388128 B TW388128 B TW 388128B TW 087105145 A TW087105145 A TW 087105145A TW 87105145 A TW87105145 A TW 87105145A TW 388128 B TW388128 B TW 388128B
- Authority
- TW
- Taiwan
- Prior art keywords
- mentioned
- region
- crystal
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- pole
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 239000013078 crystal Substances 0.000 claims description 187
- 239000000758 substrate Substances 0.000 claims description 48
- 238000009792 diffusion process Methods 0.000 claims description 40
- 230000015572 biosynthetic process Effects 0.000 claims description 36
- 239000011229 interlayer Substances 0.000 claims description 25
- 230000002441 reversible effect Effects 0.000 claims description 25
- 229910021332 silicide Inorganic materials 0.000 claims description 24
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 24
- 239000003990 capacitor Substances 0.000 claims description 22
- 239000010410 layer Substances 0.000 claims description 22
- 238000009826 distribution Methods 0.000 claims description 20
- 230000002079 cooperative effect Effects 0.000 claims description 19
- 238000009413 insulation Methods 0.000 claims description 18
- 235000015170 shellfish Nutrition 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 4
- 230000000875 corresponding effect Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000012856 packing Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 230000005284 excitation Effects 0.000 claims 2
- 230000003321 amplification Effects 0.000 claims 1
- 238000006073 displacement reaction Methods 0.000 claims 1
- 238000013508 migration Methods 0.000 claims 1
- 230000005012 migration Effects 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 93
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 65
- 229910052710 silicon Inorganic materials 0.000 description 65
- 239000010703 silicon Substances 0.000 description 65
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 43
- 229910052782 aluminium Inorganic materials 0.000 description 43
- 239000010409 thin film Substances 0.000 description 33
- 239000012535 impurity Substances 0.000 description 25
- 230000015556 catabolic process Effects 0.000 description 18
- 238000000034 method Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 10
- 230000009471 action Effects 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- 239000004576 sand Substances 0.000 description 7
- 238000007667 floating Methods 0.000 description 6
- 238000002309 gasification Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 238000009834 vaporization Methods 0.000 description 5
- 230000008016 vaporization Effects 0.000 description 5
- 229910052769 Ytterbium Inorganic materials 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical group [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 4
- 241000218033 Hibiscus Species 0.000 description 3
- 235000005206 Hibiscus Nutrition 0.000 description 3
- 235000007185 Hibiscus lunariifolius Nutrition 0.000 description 3
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052722 tritium Inorganic materials 0.000 description 3
- 241000270722 Crocodylidae Species 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 241001331845 Equus asinus x caballus Species 0.000 description 2
- 229910052778 Plutonium Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000005465 channeling Effects 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- LNNWVNGFPYWNQE-GMIGKAJZSA-N desomorphine Chemical group C1C2=CC=C(O)C3=C2[C@]24CCN(C)[C@H]1[C@@H]2CCC[C@@H]4O3 LNNWVNGFPYWNQE-GMIGKAJZSA-N 0.000 description 2
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000001012 protector Effects 0.000 description 2
- 229910052704 radon Inorganic materials 0.000 description 2
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000003685 thermal hair damage Effects 0.000 description 2
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 2
- 229940075624 ytterbium oxide Drugs 0.000 description 2
- 241000288673 Chiroptera Species 0.000 description 1
- 101100045541 Homo sapiens TBCD gene Proteins 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 1
- 101150093640 SSD1 gene Proteins 0.000 description 1
- 101100111629 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR2 gene Proteins 0.000 description 1
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- 102100030290 Tubulin-specific chaperone D Human genes 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- CHLJYJMHKCYDMM-UHFFFAOYSA-N alumane;nickel Chemical compound [AlH3].[Ni].[Ni] CHLJYJMHKCYDMM-UHFFFAOYSA-N 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 210000001185 bone marrow Anatomy 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229940065285 cadmium compound Drugs 0.000 description 1
- 150000001662 cadmium compounds Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 229910003440 dysprosium oxide Inorganic materials 0.000 description 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000012771 household material Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 102220057255 rs730881172 Human genes 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27713397A JP4054093B2 (ja) | 1997-10-09 | 1997-10-09 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW388128B true TW388128B (en) | 2000-04-21 |
Family
ID=17579260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087105145A TW388128B (en) | 1997-10-09 | 1998-04-04 | Semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6274908B1 (enExample) |
| EP (2) | EP1267407A3 (enExample) |
| JP (1) | JP4054093B2 (enExample) |
| KR (1) | KR100298983B1 (enExample) |
| DE (1) | DE69809694T2 (enExample) |
| TW (1) | TW388128B (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI603455B (zh) * | 2013-02-06 | 2017-10-21 | 精工半導體有限公司 | 具備靜電放電（ｅｓｄ）保護電路的半導體裝置 |
| TWI713279B (zh) * | 2019-05-17 | 2020-12-11 | 明基電通股份有限公司 | 過電流保護系統 |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6137143A (en) * | 1998-06-30 | 2000-10-24 | Intel Corporation | Diode and transistor design for high speed I/O |
| FR2803099B1 (fr) | 1999-12-22 | 2002-08-16 | St Microelectronics Sa | Dispositif de protection d'une structure soi |
| DE10014384B4 (de) | 2000-03-23 | 2005-11-03 | Infineon Technologies Ag | Mittels Feldeffekt steuerbare Halbleiteranordnung mit lateral verlaufender Kanalzone |
| TW441074B (en) * | 2000-04-15 | 2001-06-16 | United Microelectronics Corp | Electrostatic discharge protection circuit structure for high voltage device |
| TW446192U (en) * | 2000-05-04 | 2001-07-11 | United Microelectronics Corp | Electrostatic discharge protection circuit |
| DE10022367C2 (de) * | 2000-05-08 | 2002-05-08 | Micronas Gmbh | ESD-Schutzstruktur und Verfahren zur Herstellung |
| AU2002225999A1 (en) * | 2001-01-31 | 2002-08-12 | Advanced Micro Devices, Inc. | Partially silicide diode and method of manufacture |
| US6462381B1 (en) * | 2001-02-22 | 2002-10-08 | Advanced Micro Devices, Inc. | Silicon-on-insulator (SOI) electrostatic discharge (ESD) protection device with backside contact opening |
| US6589823B1 (en) | 2001-02-22 | 2003-07-08 | Advanced Micro Devices, Inc. | Silicon-on-insulator (SOI)electrostatic discharge (ESD) protection device with backside contact plug |
| JP2003031669A (ja) * | 2001-07-13 | 2003-01-31 | Ricoh Co Ltd | 半導体装置 |
| US6611025B2 (en) * | 2001-09-05 | 2003-08-26 | Winbond Electronics Corp. | Apparatus and method for improved power bus ESD protection |
| US6693783B2 (en) * | 2002-04-08 | 2004-02-17 | Exar Corporation | Bounce tolerant fuse trimming circuit with controlled timing |
| US6582997B1 (en) * | 2002-05-17 | 2003-06-24 | Taiwan Semiconductor Manufacturing Company | ESD protection scheme for outputs with resistor loading |
| JP4224588B2 (ja) * | 2002-05-24 | 2009-02-18 | 独立行政法人産業技術総合研究所 | 電気信号伝送線路 |
| DE10314505B4 (de) | 2003-03-31 | 2009-05-07 | Advanced Micro Devices, Inc., Sunnyvale | Verbesserte Diodenstruktur für Soi-Schaltungen |
| DE10344849B3 (de) * | 2003-09-26 | 2005-07-21 | Infineon Technologies Ag | Integrierte Schaltung mit Schutz vor elektrostatischer Entladung |
| US7067883B2 (en) * | 2003-10-31 | 2006-06-27 | Lattice Semiconductor Corporation | Lateral high-voltage junction device |
| JP2005191161A (ja) * | 2003-12-25 | 2005-07-14 | Oki Electric Ind Co Ltd | 半導体装置 |
| JP5154000B2 (ja) * | 2005-05-13 | 2013-02-27 | ラピスセミコンダクタ株式会社 | 半導体装置 |
| US7863610B2 (en) * | 2007-08-22 | 2011-01-04 | Qimonda North America Corp. | Integrated circuit including silicide region to inhibit parasitic currents |
| JP2009283610A (ja) * | 2008-05-21 | 2009-12-03 | Elpida Memory Inc | Ｅｓｄ保護回路 |
| CN102110671B (zh) * | 2009-12-29 | 2013-01-02 | 中芯国际集成电路制造(上海)有限公司 | 静电放电保护装置 |
| JP2014056972A (ja) * | 2012-09-13 | 2014-03-27 | Ricoh Co Ltd | 静電破壊保護回路及び半導体集積回路 |
| JP6146165B2 (ja) * | 2013-07-01 | 2017-06-14 | セイコーエプソン株式会社 | 静電気保護回路、電気光学装置、及び電子機器 |
| CN103944154A (zh) * | 2013-12-11 | 2014-07-23 | 厦门天马微电子有限公司 | 一种静电保护电路及液晶显示器 |
| JP6300659B2 (ja) * | 2014-06-19 | 2018-03-28 | 株式会社東芝 | 半導体装置 |
| FR3051969A1 (fr) | 2016-05-31 | 2017-12-01 | Stmicroelectronics Rousset | Procede de fabrication de diodes de puissance, en particulier pour former un pont de graetz, et dispositif correspondant |
| KR20190140216A (ko) * | 2018-06-11 | 2019-12-19 | 에스케이하이닉스 주식회사 | Esd 보호 회로를 포함하는 반도체 집적 회로 장치 |
| JP7396774B2 (ja) * | 2019-03-26 | 2023-12-12 | ラピスセミコンダクタ株式会社 | 論理回路 |
| US10971633B2 (en) | 2019-09-04 | 2021-04-06 | Stmicroelectronics (Rousset) Sas | Structure and method of forming a semiconductor device |
| KR20230102030A (ko) | 2021-12-29 | 2023-07-07 | 삼성디스플레이 주식회사 | 정전기 방전 회로 및 이를 포함하는 표시 장치 |
| CN114582282B (zh) * | 2022-03-30 | 2023-07-25 | 武汉华星光电半导体显示技术有限公司 | Esd保护电路及显示装置 |
| KR20230143662A (ko) | 2022-04-05 | 2023-10-13 | 삼성디스플레이 주식회사 | 표시 패널 및 그것을 포함하는 표시 장치 |
| WO2025048773A1 (en) * | 2023-08-25 | 2025-03-06 | Viasat, Inc. | Diode-less electrostatic discharge protection circuit |
| CN118137982A (zh) * | 2024-02-05 | 2024-06-04 | 南通至晟微电子技术有限公司 | 一体化限幅低噪声放大器电路 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0758734B2 (ja) * | 1987-02-23 | 1995-06-21 | 株式会社東芝 | 絶縁ゲ−ト型セミカスタム集積回路 |
| US4989057A (en) | 1988-05-26 | 1991-01-29 | Texas Instruments Incorporated | ESD protection for SOI circuits |
| JPH02260459A (ja) | 1989-03-30 | 1990-10-23 | Ricoh Co Ltd | 入力保護回路 |
| KR940004449B1 (ko) | 1990-03-02 | 1994-05-25 | 가부시키가이샤 도시바 | 반도체장치 |
| US5283449A (en) | 1990-08-09 | 1994-02-01 | Nec Corporation | Semiconductor integrated circuit device including two types of MOSFETS having source/drain region different in sheet resistance from each other |
| JP3244581B2 (ja) | 1993-12-29 | 2002-01-07 | 株式会社リコー | デュアルゲート型ｃｍｏｓ半導体装置 |
| JPH0837284A (ja) | 1994-07-21 | 1996-02-06 | Nippondenso Co Ltd | 半導体集積回路装置 |
| JPH08195443A (ja) | 1995-01-18 | 1996-07-30 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| US5610790A (en) | 1995-01-20 | 1997-03-11 | Xilinx, Inc. | Method and structure for providing ESD protection for silicon on insulator integrated circuits |
| US5629544A (en) * | 1995-04-25 | 1997-05-13 | International Business Machines Corporation | Semiconductor diode with silicide films and trench isolation |
| JPH098331A (ja) * | 1995-06-23 | 1997-01-10 | Mitsubishi Electric Corp | Ｓｏｉ入力保護回路 |
| JP3717227B2 (ja) | 1996-03-29 | 2005-11-16 | 株式会社ルネサステクノロジ | 入力／出力保護回路 |
| US5818086A (en) * | 1996-06-11 | 1998-10-06 | Winbond Electronics Corporation | Reinforced ESD protection for NC-pin adjacent input pin |
-
1997
- 1997-10-09 JP JP27713397A patent/JP4054093B2/ja not_active Expired - Fee Related
-
1998
- 1998-04-04 TW TW087105145A patent/TW388128B/zh not_active IP Right Cessation
- 1998-04-08 US US09/056,634 patent/US6274908B1/en not_active Expired - Lifetime
- 1998-04-17 EP EP02013736A patent/EP1267407A3/en not_active Withdrawn
- 1998-04-17 DE DE69809694T patent/DE69809694T2/de not_active Expired - Fee Related
- 1998-04-17 EP EP98107063A patent/EP0923132B1/en not_active Expired - Lifetime
- 1998-04-29 KR KR1019980015348A patent/KR100298983B1/ko not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI603455B (zh) * | 2013-02-06 | 2017-10-21 | 精工半導體有限公司 | 具備靜電放電（ｅｓｄ）保護電路的半導體裝置 |
| TWI713279B (zh) * | 2019-05-17 | 2020-12-11 | 明基電通股份有限公司 | 過電流保護系統 |
| US11223199B2 (en) | 2019-05-17 | 2022-01-11 | Benq Corporation | Over current protection system having high operational endurance and capable of stabilizing voltages |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11121750A (ja) | 1999-04-30 |
| EP1267407A2 (en) | 2002-12-18 |
| KR100298983B1 (ko) | 2001-10-19 |
| US6274908B1 (en) | 2001-08-14 |
| KR19990036477A (ko) | 1999-05-25 |
| EP1267407A3 (en) | 2005-05-11 |
| EP0923132A1 (en) | 1999-06-16 |
| JP4054093B2 (ja) | 2008-02-27 |
| DE69809694T2 (de) | 2003-07-10 |
| EP0923132B1 (en) | 2002-11-27 |
| DE69809694D1 (de) | 2003-01-09 |
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