AU2002225999A1 - Partially silicide diode and method of manufacture - Google Patents

Partially silicide diode and method of manufacture

Info

Publication number
AU2002225999A1
AU2002225999A1 AU2002225999A AU2002225999A AU2002225999A1 AU 2002225999 A1 AU2002225999 A1 AU 2002225999A1 AU 2002225999 A AU2002225999 A AU 2002225999A AU 2002225999 A AU2002225999 A AU 2002225999A AU 2002225999 A1 AU2002225999 A1 AU 2002225999A1
Authority
AU
Australia
Prior art keywords
manufacture
partially
silicide diode
diode
partially silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002225999A
Inventor
Stephen G. Beebe
William G. En
Dong-Hyuk Ju
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of AU2002225999A1 publication Critical patent/AU2002225999A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
AU2002225999A 2001-01-31 2001-12-03 Partially silicide diode and method of manufacture Abandoned AU2002225999A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US77473201A 2001-01-31 2001-01-31
US09/774,732 2001-01-31
PCT/US2001/047113 WO2002061841A2 (en) 2001-01-31 2001-12-03 Partially silicide diode and method of manufacture

Publications (1)

Publication Number Publication Date
AU2002225999A1 true AU2002225999A1 (en) 2002-08-12

Family

ID=25102103

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002225999A Abandoned AU2002225999A1 (en) 2001-01-31 2001-12-03 Partially silicide diode and method of manufacture

Country Status (2)

Country Link
AU (1) AU2002225999A1 (en)
WO (1) WO2002061841A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10314505B4 (en) 2003-03-31 2009-05-07 Advanced Micro Devices, Inc., Sunnyvale Improved diode structure for Soi circuits
US7227233B2 (en) 2005-09-12 2007-06-05 International Business Machines Corporation Silicon-on-insulator (SOI) Read Only Memory (ROM) array and method of making a SOI ROM
US9368648B2 (en) 2009-04-02 2016-06-14 Qualcomm Incorporated Active diode having no gate and no shallow trench isolation

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8900593A (en) * 1989-03-13 1990-10-01 Philips Nv SEMICONDUCTOR DEVICE WITH A PROTECTION CIRCUIT.
US5629544A (en) * 1995-04-25 1997-05-13 International Business Machines Corporation Semiconductor diode with silicide films and trench isolation
JP4054093B2 (en) * 1997-10-09 2008-02-27 株式会社ルネサステクノロジ Semiconductor device

Also Published As

Publication number Publication date
WO2002061841A2 (en) 2002-08-08
WO2002061841A3 (en) 2003-01-23

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase