KR100275396B1 - 파워 온 리세트 신호를 확실하게 발생할 수 있는 파워 온 리세트 회로 - Google Patents

파워 온 리세트 신호를 확실하게 발생할 수 있는 파워 온 리세트 회로 Download PDF

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Publication number
KR100275396B1
KR100275396B1 KR1019980016655A KR19980016655A KR100275396B1 KR 100275396 B1 KR100275396 B1 KR 100275396B1 KR 1019980016655 A KR1019980016655 A KR 1019980016655A KR 19980016655 A KR19980016655 A KR 19980016655A KR 100275396 B1 KR100275396 B1 KR 100275396B1
Authority
KR
South Korea
Prior art keywords
node
power
channel mos
voltage
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019980016655A
Other languages
English (en)
Korean (ko)
Other versions
KR19990029193A (ko
Inventor
레이 딩
Original Assignee
다니구찌 이찌로오
미쓰비시덴키 가부시키가이샤
기타오카 다카시
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다니구찌 이찌로오, 미쓰비시덴키 가부시키가이샤, 기타오카 다카시 filed Critical 다니구찌 이찌로오
Publication of KR19990029193A publication Critical patent/KR19990029193A/ko
Application granted granted Critical
Publication of KR100275396B1 publication Critical patent/KR100275396B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Electronic Switches (AREA)
  • Dram (AREA)
  • Microcomputers (AREA)
KR1019980016655A 1997-09-09 1998-05-09 파워 온 리세트 신호를 확실하게 발생할 수 있는 파워 온 리세트 회로 Expired - Fee Related KR100275396B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9243648A JPH1186525A (ja) 1997-09-09 1997-09-09 パワーオンリセット回路
JP97-243648 1997-09-09

Publications (2)

Publication Number Publication Date
KR19990029193A KR19990029193A (ko) 1999-04-26
KR100275396B1 true KR100275396B1 (ko) 2000-12-15

Family

ID=17106952

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980016655A Expired - Fee Related KR100275396B1 (ko) 1997-09-09 1998-05-09 파워 온 리세트 신호를 확실하게 발생할 수 있는 파워 온 리세트 회로

Country Status (6)

Country Link
US (1) US6016068A (enExample)
JP (1) JPH1186525A (enExample)
KR (1) KR100275396B1 (enExample)
CN (1) CN1135562C (enExample)
DE (1) DE19813201C2 (enExample)
TW (1) TW393641B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100301252B1 (ko) * 1999-06-23 2001-11-01 박종섭 파워 온 리셋 회로
KR100333666B1 (ko) * 1999-06-30 2002-04-24 박종섭 다양한 파워-온 신호에 대하여 리셋신호를 생성하는 파워-온리셋회로
KR100316528B1 (ko) * 1999-12-21 2001-12-12 박종섭 노이즈 검출기를 이용한 파워온리셋신호 발생장치
JP3639189B2 (ja) 2000-06-22 2005-04-20 株式会社デンソー 負荷駆動回路
KR20020009702A (ko) * 2000-07-26 2002-02-02 박종섭 파워-온 리셋회로
ITRM20010522A1 (it) * 2001-08-30 2003-02-28 Micron Technology Inc Sequenziale di "power-on-reset" condizionato e robusto a potenza ultrabassa per circuiti integrati.
KR100427034B1 (ko) * 2002-07-22 2004-04-14 주식회사 하이닉스반도체 반도체 장치의 피워온리셋 회로
US7310760B1 (en) 2002-12-11 2007-12-18 Chung Sun Apparatus and method for initializing an integrated circuit device and activating a function of the device once an input power supply has reached a threshold voltage
CN100414643C (zh) * 2004-01-15 2008-08-27 威达电股份有限公司 电源开启重置的解除装置及方法
DE102004006254A1 (de) * 2004-02-09 2005-09-01 Infineon Technologies Ag Schaltungsanordnung zur Erzeugung eines Rücksetzsignals nach einem Absinken und Wiederansteigen einer Versorgungsspannung
JP4578882B2 (ja) * 2004-07-30 2010-11-10 ルネサスエレクトロニクス株式会社 半導体集積回路
CN103510967B (zh) * 2013-10-12 2015-12-23 中联重科股份有限公司 伸缩臂架和混凝土喷射机
TWM533587U (en) 2016-08-19 2016-12-11 Full Reach Industry Co Ltd Strengthened teeth wheel collar of hub

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5951177B2 (ja) * 1977-03-12 1984-12-12 日本電気株式会社 オ−トクリア信号発生回路
JPH0474015A (ja) * 1990-07-13 1992-03-09 Mitsubishi Electric Corp 半導体集積回路装置
JP2816508B2 (ja) * 1991-12-16 1998-10-27 三菱電機株式会社 電源投入検出回路
DE59209683D1 (de) * 1992-09-30 1999-06-02 Siemens Ag Integrierte Schaltung zur Erzeugung eines Reset-Signals
US5546045A (en) * 1993-11-05 1996-08-13 National Semiconductor Corp. Rail to rail operational amplifier output stage
US5570050A (en) * 1994-03-08 1996-10-29 Intel Corporation Zero standby current power-up reset circuit
US5646563A (en) * 1994-07-15 1997-07-08 National Semiconductor Corporation Charge pump with near zero offset current

Also Published As

Publication number Publication date
CN1135562C (zh) 2004-01-21
CN1211041A (zh) 1999-03-17
US6016068A (en) 2000-01-18
KR19990029193A (ko) 1999-04-26
TW393641B (en) 2000-06-11
DE19813201C2 (de) 1999-12-02
DE19813201A1 (de) 1999-03-11
JPH1186525A (ja) 1999-03-30

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