KR100268788B1 - 반도체소자의 금속배선 형성방법 - Google Patents
반도체소자의 금속배선 형성방법 Download PDFInfo
- Publication number
- KR100268788B1 KR100268788B1 KR1019970030281A KR19970030281A KR100268788B1 KR 100268788 B1 KR100268788 B1 KR 100268788B1 KR 1019970030281 A KR1019970030281 A KR 1019970030281A KR 19970030281 A KR19970030281 A KR 19970030281A KR 100268788 B1 KR100268788 B1 KR 100268788B1
- Authority
- KR
- South Korea
- Prior art keywords
- aluminum alloy
- alloy layer
- temperature
- cvd
- pvd aluminum
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 18
- 239000002184 metal Substances 0.000 title claims abstract description 18
- 230000015572 biosynthetic process Effects 0.000 title abstract description 3
- 239000004065 semiconductor Substances 0.000 title description 13
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 52
- 238000000151 deposition Methods 0.000 claims abstract description 16
- 238000009792 diffusion process Methods 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 5
- 230000006378 damage Effects 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000005240 physical vapour deposition Methods 0.000 abstract description 27
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 4
- 230000003746 surface roughness Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 abstract 3
- 239000012790 adhesive layer Substances 0.000 abstract 1
- 238000011065 in-situ storage Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- -1 TiN Chemical class 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910008807 WSiN Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 238000010169 landfilling Methods 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 210000002381 plasma Anatomy 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970030281A KR100268788B1 (ko) | 1997-06-30 | 1997-06-30 | 반도체소자의 금속배선 형성방법 |
| TW087109821A TW387136B (en) | 1997-06-30 | 1998-06-19 | Method of forming a metal wire of a semiconductor device |
| JP17605698A JP3288010B2 (ja) | 1997-06-30 | 1998-06-23 | 半導体素子の金属配線形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970030281A KR100268788B1 (ko) | 1997-06-30 | 1997-06-30 | 반도체소자의 금속배선 형성방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19990006059A KR19990006059A (ko) | 1999-01-25 |
| KR100268788B1 true KR100268788B1 (ko) | 2000-11-01 |
Family
ID=19513017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019970030281A KR100268788B1 (ko) | 1997-06-30 | 1997-06-30 | 반도체소자의 금속배선 형성방법 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP3288010B2 (ja) |
| KR (1) | KR100268788B1 (ja) |
| TW (1) | TW387136B (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100399417B1 (ko) * | 2001-01-08 | 2003-09-26 | 삼성전자주식회사 | 반도체 집적 회로의 제조 방법 |
| KR20030002522A (ko) * | 2001-06-29 | 2003-01-09 | 주식회사 하이닉스반도체 | 금속 배선 형성 방법 |
| TWI512860B (zh) * | 2013-06-17 | 2015-12-11 | China Steel Corp | 導線結構及其製造方法 |
-
1997
- 1997-06-30 KR KR1019970030281A patent/KR100268788B1/ko not_active IP Right Cessation
-
1998
- 1998-06-19 TW TW087109821A patent/TW387136B/zh not_active IP Right Cessation
- 1998-06-23 JP JP17605698A patent/JP3288010B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP3288010B2 (ja) | 2002-06-04 |
| KR19990006059A (ko) | 1999-01-25 |
| TW387136B (en) | 2000-04-11 |
| JPH1187508A (ja) | 1999-03-30 |
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| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20090624 Year of fee payment: 10 |
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| LAPS | Lapse due to unpaid annual fee |