KR100263405B1 - 처리장치의 제어방법 - Google Patents
처리장치의 제어방법 Download PDFInfo
- Publication number
- KR100263405B1 KR100263405B1 KR1019940015831A KR19940015831A KR100263405B1 KR 100263405 B1 KR100263405 B1 KR 100263405B1 KR 1019940015831 A KR1019940015831 A KR 1019940015831A KR 19940015831 A KR19940015831 A KR 19940015831A KR 100263405 B1 KR100263405 B1 KR 100263405B1
- Authority
- KR
- South Korea
- Prior art keywords
- refrigerant
- coolant
- temperature
- heat transfer
- processing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
-
- H10P74/00—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
- C23C16/466—Cooling of the substrate using thermal contact gas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP93-190768 | 1993-07-02 | ||
| JP93-190769 | 1993-07-02 | ||
| JP5190769A JPH0722403A (ja) | 1993-07-02 | 1993-07-02 | 処理装置の制御方法 |
| JP5190770A JPH0718474A (ja) | 1993-07-02 | 1993-07-02 | 処理装置 |
| JP5190858A JP3055847B2 (ja) | 1993-07-02 | 1993-07-02 | 減圧処理装置 |
| JP93-190770 | 1993-07-02 | ||
| JP93-190858 | 1993-07-02 | ||
| JP5190768A JPH0722402A (ja) | 1993-07-02 | 1993-07-02 | 処理装置の制御方法 |
| JP5208374A JPH0745596A (ja) | 1993-07-30 | 1993-07-30 | 処理装置 |
| JP93-208374 | 1993-07-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950004427A KR950004427A (ko) | 1995-02-18 |
| KR100263405B1 true KR100263405B1 (ko) | 2000-09-01 |
Family
ID=27529014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940015831A Expired - Lifetime KR100263405B1 (ko) | 1993-07-02 | 1994-07-02 | 처리장치의 제어방법 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US5584971A (cg-RX-API-DMAC10.html) |
| KR (1) | KR100263405B1 (cg-RX-API-DMAC10.html) |
| TW (1) | TW262566B (cg-RX-API-DMAC10.html) |
Families Citing this family (100)
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|---|---|---|---|---|
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| US6063710A (en) * | 1996-02-26 | 2000-05-16 | Sony Corporation | Method and apparatus for dry etching with temperature control |
| JP3591977B2 (ja) * | 1996-03-18 | 2004-11-24 | キヤノン株式会社 | マイクロ波プラズマcvd法を用いた膜堆積方法および膜堆積装置 |
| US6106678A (en) * | 1996-03-29 | 2000-08-22 | Lam Research Corporation | Method of high density plasma CVD gap-filling |
| US5753566A (en) * | 1996-05-23 | 1998-05-19 | Taiwan Semiconductor Manufactured Company, Ltd. | Method of spin-on-glass etchback using hot backside helium |
| JP3354438B2 (ja) * | 1996-06-04 | 2002-12-09 | 株式会社荏原製作所 | 有機物を含有する水媒体の処理方法及び水熱反応装置 |
| US6046439A (en) * | 1996-06-17 | 2000-04-04 | Mattson Technology, Inc. | System and method for thermal processing of a semiconductor substrate |
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| US5711851A (en) | 1996-07-12 | 1998-01-27 | Micron Technology, Inc. | Process for improving the performance of a temperature-sensitive etch process |
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| US6072163A (en) * | 1998-03-05 | 2000-06-06 | Fsi International Inc. | Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate |
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| US5886866A (en) * | 1998-07-06 | 1999-03-23 | Applied Materials, Inc. | Electrostatic chuck having a combination electrode structure for substrate chucking, heating and biasing |
| US6497801B1 (en) | 1998-07-10 | 2002-12-24 | Semitool Inc | Electroplating apparatus with segmented anode array |
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| US9856557B1 (en) * | 2016-01-22 | 2018-01-02 | Seagate Technology Llc | Fabrication of a multi-layered magnetic element |
| US10395955B2 (en) * | 2017-02-15 | 2019-08-27 | Globalfoundries Singapore Pte. Ltd. | Method and system for detecting a coolant leak in a dry process chamber wafer chuck |
| US11031032B1 (en) | 2017-04-03 | 2021-06-08 | Seagate Technology Llc | Cryogenic magnetic alloys with less grain refinement dopants |
| TWI829367B (zh) * | 2017-11-16 | 2024-01-11 | 日商東京威力科創股份有限公司 | 電漿處理裝置、溫度控制方法及溫度控制程式 |
| JP6522180B1 (ja) * | 2018-02-08 | 2019-05-29 | Sppテクノロジーズ株式会社 | 基板載置台及びこれを備えたプラズマ処理装置及びプラズマ処理方法 |
| TW202013581A (zh) * | 2018-05-23 | 2020-04-01 | 日商東京威力科創股份有限公司 | 電漿處理裝置 |
| KR102242463B1 (ko) * | 2019-04-16 | 2021-04-20 | (주)보성이엔지 | 선입선출 방식의 솔더 용기 자동 공급 관리 시스템 |
| JP7297591B2 (ja) * | 2019-08-09 | 2023-06-26 | 東京エレクトロン株式会社 | 基板処理装置およびその製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6056431B2 (ja) * | 1980-10-09 | 1985-12-10 | 三菱電機株式会社 | プラズマエツチング装置 |
| US4956043A (en) * | 1987-05-25 | 1990-09-11 | Hitachi, Ltd. | Dry etching apparatus |
| US4911812A (en) * | 1987-10-21 | 1990-03-27 | Hitachi, Ltd. | Plasma treating method and apparatus therefor |
| US5078851A (en) * | 1989-07-26 | 1992-01-07 | Kouji Nishihata | Low-temperature plasma processor |
| US5123375A (en) * | 1990-01-08 | 1992-06-23 | Lsi Logic Corporation | Structure for filtering CVD chamber process gases |
| JP2892787B2 (ja) * | 1990-07-20 | 1999-05-17 | 東京エレクトロン株式会社 | 電気信号の抽出方法 |
| US5234527A (en) * | 1990-07-20 | 1993-08-10 | Tokyo Electron Limited | Liquid level detecting device and a processing apparatus |
| JPH04196528A (ja) * | 1990-11-28 | 1992-07-16 | Toshiba Corp | マグネトロンエッチング装置 |
| JP3044824B2 (ja) * | 1991-04-27 | 2000-05-22 | ソニー株式会社 | ドライエッチング装置及びドライエッチング方法 |
| US5252134A (en) * | 1991-05-31 | 1993-10-12 | Stauffer Craig M | Integrated delivery system for chemical vapor from non-gaseous sources for semiconductor processing |
-
1994
- 1994-06-30 TW TW083105983A patent/TW262566B/zh active
- 1994-07-01 US US08/269,480 patent/US5584971A/en not_active Expired - Lifetime
- 1994-07-02 KR KR1019940015831A patent/KR100263405B1/ko not_active Expired - Lifetime
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1996
- 1996-01-19 US US08/589,041 patent/US5660740A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US5584971A (en) | 1996-12-17 |
| KR950004427A (ko) | 1995-02-18 |
| US5660740A (en) | 1997-08-26 |
| TW262566B (cg-RX-API-DMAC10.html) | 1995-11-11 |
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