KR100247682B1 - 블루-그린 레이저다이오드 - Google Patents
블루-그린 레이저다이오드 Download PDFInfo
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- KR100247682B1 KR100247682B1 KR1019930703441A KR930703441A KR100247682B1 KR 100247682 B1 KR100247682 B1 KR 100247682B1 KR 1019930703441 A KR1019930703441 A KR 1019930703441A KR 930703441 A KR930703441 A KR 930703441A KR 100247682 B1 KR100247682 B1 KR 100247682B1
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- South Korea
- Prior art keywords
- layer
- laser diode
- semiconductor
- znse
- layers
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- 239000004065 semiconductor Substances 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 49
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
- H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
- H01L33/285—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table characterised by the doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2213—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on polyimide or resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
- H01S5/3059—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping in II-VI materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3068—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure deep levels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US70060191A | 1991-05-15 | 1991-05-15 | |
| US700,601 | 1991-05-15 | ||
| US07/700,606 US5274269A (en) | 1991-05-15 | 1991-05-15 | Ohmic contact for p-type group II-IV compound semiconductors |
| US700,580 | 1991-05-15 | ||
| US700,606 | 1991-05-15 | ||
| US07/700,580 US5213998A (en) | 1991-05-15 | 1991-05-15 | Method for making an ohmic contact for p-type group II-VI compound semiconductors |
| PCT/US1992/003782 WO1992021170A2 (en) | 1991-05-15 | 1992-05-12 | Blue-green laser diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR100247682B1 true KR100247682B1 (ko) | 2000-03-15 |
Family
ID=27418708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930703441A KR100247682B1 (ko) | 1991-05-15 | 1992-05-12 | 블루-그린 레이저다이오드 |
Country Status (16)
| Country | Link |
|---|---|
| EP (2) | EP0670593A3 (ru) |
| JP (1) | JP3269558B2 (ru) |
| KR (1) | KR100247682B1 (ru) |
| CN (2) | CN1321488C (ru) |
| AU (1) | AU654726B2 (ru) |
| BR (1) | BR9205993A (ru) |
| CA (1) | CA2109310C (ru) |
| DE (1) | DE69220942T2 (ru) |
| ES (1) | ES2104931T3 (ru) |
| FI (1) | FI110971B (ru) |
| HK (1) | HK1001353A1 (ru) |
| IL (1) | IL101857A (ru) |
| MY (2) | MY110622A (ru) |
| RU (1) | RU2127478C1 (ru) |
| SG (1) | SG46466A1 (ru) |
| WO (1) | WO1992021170A2 (ru) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5396103A (en) * | 1991-05-15 | 1995-03-07 | Minnesota Mining And Manufacturing Company | Graded composition ohmic contact for P-type II-VI semiconductors |
| US5341001A (en) * | 1992-02-13 | 1994-08-23 | Matsushita Electric Industrial Co., Ltd. | Sulfide-selenide manganese-zinc mixed crystal photo semiconductor and laser diode |
| JP3453787B2 (ja) * | 1993-06-18 | 2003-10-06 | ソニー株式会社 | 半導体レーザ及びその製造方法 |
| US5422902A (en) * | 1993-07-02 | 1995-06-06 | Philips Electronics North America Corporation | BeTe-ZnSe graded band gap ohmic contact to p-type ZnSe semiconductors |
| US5640409A (en) * | 1993-07-02 | 1997-06-17 | Sony Corporation | Semiconductor laser |
| MY111898A (en) * | 1993-07-02 | 2001-02-28 | Sony Corp | Semiconductor laser |
| JPH07231142A (ja) * | 1994-02-18 | 1995-08-29 | Mitsubishi Electric Corp | 半導体発光素子 |
| JPH07263372A (ja) * | 1994-03-24 | 1995-10-13 | Sharp Corp | Ｉｉ−ｖｉ族化合物半導体装置およびその製造方法 |
| US5442204A (en) * | 1994-05-12 | 1995-08-15 | Philips Electronics North America Corporation | III-V Semiconductor heterostructure contacting a P-type II-VI compound |
| US6876003B1 (en) | 1999-04-15 | 2005-04-05 | Sumitomo Electric Industries, Ltd. | Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device |
| DE10260183A1 (de) * | 2002-12-20 | 2004-07-15 | Osram Opto Semiconductors Gmbh | Vertikal emittierender, optisch gepumpter Halbleiterlaser mit externem Resonator |
| JP4085953B2 (ja) * | 2003-10-22 | 2008-05-14 | 住友電気工業株式会社 | 半導体光素子 |
| JP4411540B2 (ja) * | 2005-09-15 | 2010-02-10 | ソニー株式会社 | 半導体レーザ装置 |
| TWI649895B (zh) * | 2010-04-30 | 2019-02-01 | 美國波士頓大學信託會 | 具能帶結構位變動之高效率紫外光發光二極體 |
| CN102185058B (zh) * | 2011-04-02 | 2013-09-25 | 映瑞光电科技(上海)有限公司 | 一种氮化物led结构及其制备方法 |
| CN102185060B (zh) * | 2011-04-15 | 2014-07-16 | 映瑞光电科技(上海)有限公司 | 一种氮化物led结构及其制备方法 |
| US10209517B2 (en) | 2013-05-20 | 2019-02-19 | Digilens, Inc. | Holographic waveguide eye tracker |
| US20180275402A1 (en) | 2015-01-12 | 2018-09-27 | Digilens, Inc. | Holographic waveguide light field displays |
| EP3245444B1 (en) | 2015-01-12 | 2021-09-08 | DigiLens Inc. | Environmentally isolated waveguide display |
| EP3359999A1 (en) | 2015-10-05 | 2018-08-15 | Popovich, Milan Momcilo | Waveguide display |
| DE102019205376A1 (de) * | 2019-04-15 | 2020-10-15 | Forschungszentrum Jülich | Herstellen eines ohmschen Kontakts sowie elektronisches Bauelement mit ohmschem Kontakt |
| JP7207365B2 (ja) * | 2019-06-19 | 2023-01-18 | 株式会社デンソー | 半導体レーザ光源モジュール、半導体レーザ装置 |
| EP4022370A4 (en) | 2019-08-29 | 2023-08-30 | Digilens Inc. | VACUUM BRAGG GRATINGS AND METHODS OF MANUFACTURING |
| DE102021004609A1 (de) | 2021-09-11 | 2023-03-16 | Eques Consulting GmbH | Vorrichtung und damit durchführbares Verfahren zur non-invasiven Konzentrationsbestimmung von Komponenten im menschlichen Blutkreislauf und Verwendung des Verfahrens. |
| CN115498077A (zh) * | 2022-09-22 | 2022-12-20 | 深圳市思坦科技有限公司 | 红光微型led芯片制备方法、红光微型led芯片以及显示装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01184977A (ja) * | 1988-01-20 | 1989-07-24 | Inkiyuubeetaa Japan:Kk | 可視発光半導体レーザ装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5863183A (ja) * | 1981-10-09 | 1983-04-14 | Semiconductor Res Found | ２−６族間化合物の結晶成長法 |
| JPS60178684A (ja) * | 1984-02-24 | 1985-09-12 | Nec Corp | 半導体レ−ザ |
| JPH0728052B2 (ja) * | 1986-01-27 | 1995-03-29 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
| JPS63185077A (ja) * | 1987-01-27 | 1988-07-30 | Matsushita Electric Ind Co Ltd | 青色発光ダイオ−ド |
| DE3810245A1 (de) * | 1987-03-27 | 1988-10-06 | Japan Incubator Inc | Lichtemittierendes element und verfahren zu seiner herstellung |
| JPS63288072A (ja) * | 1987-05-20 | 1988-11-25 | Seiko Epson Corp | 半導体発光装置 |
| JPH01140663A (ja) * | 1987-11-27 | 1989-06-01 | Toshiba Corp | 半導体装置の電極 |
| US4992837A (en) * | 1988-11-15 | 1991-02-12 | Kokusai Denshin Denwa Co., Ltd. | Light emitting semiconductor device |
| US5081632A (en) * | 1989-01-26 | 1992-01-14 | Hitachi, Ltd. | Semiconductor emitting device |
| US5028561A (en) * | 1989-06-15 | 1991-07-02 | Hughes Aircraft Company | Method of growing p-type group II-VI material |
| US5248631A (en) * | 1990-08-24 | 1993-09-28 | Minnesota Mining And Manufacturing Company | Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals |
-
1992
- 1992-05-12 KR KR1019930703441A patent/KR100247682B1/ko not_active IP Right Cessation
- 1992-05-12 AU AU20264/92A patent/AU654726B2/en not_active Ceased
- 1992-05-12 RU RU93058663A patent/RU2127478C1/ru not_active IP Right Cessation
- 1992-05-12 EP EP95108005A patent/EP0670593A3/en not_active Withdrawn
- 1992-05-12 CA CA002109310A patent/CA2109310C/en not_active Expired - Fee Related
- 1992-05-12 ES ES92912423T patent/ES2104931T3/es not_active Expired - Lifetime
- 1992-05-12 DE DE69220942T patent/DE69220942T2/de not_active Expired - Fee Related
- 1992-05-12 BR BR9205993A patent/BR9205993A/pt not_active IP Right Cessation
- 1992-05-12 EP EP92912423A patent/EP0584236B1/en not_active Expired - Lifetime
- 1992-05-12 JP JP50007793A patent/JP3269558B2/ja not_active Expired - Fee Related
- 1992-05-12 SG SG1996004919A patent/SG46466A1/en unknown
- 1992-05-12 WO PCT/US1992/003782 patent/WO1992021170A2/en active IP Right Grant
- 1992-05-14 MY MYPI92000817A patent/MY110622A/en unknown
- 1992-05-14 MY MYPI95003142A patent/MY111574A/en unknown
- 1992-05-14 IL IL10185792A patent/IL101857A/en not_active IP Right Cessation
- 1992-05-15 CN CNB021479372A patent/CN1321488C/zh not_active Expired - Fee Related
- 1992-05-15 CN CN92103575A patent/CN1097317C/zh not_active Expired - Fee Related
-
1993
- 1993-11-12 FI FI935022A patent/FI110971B/fi not_active IP Right Cessation
-
1998
- 1998-01-16 HK HK98100395A patent/HK1001353A1/xx not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01184977A (ja) * | 1988-01-20 | 1989-07-24 | Inkiyuubeetaa Japan:Kk | 可視発光半導体レーザ装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CA2109310C (en) | 2001-10-02 |
| MY111574A (en) | 2000-08-30 |
| BR9205993A (pt) | 1994-08-02 |
| RU2127478C1 (ru) | 1999-03-10 |
| EP0670593A2 (en) | 1995-09-06 |
| WO1992021170A3 (en) | 1993-03-04 |
| CA2109310A1 (en) | 1992-11-16 |
| DE69220942D1 (de) | 1997-08-21 |
| CN1066936A (zh) | 1992-12-09 |
| CN1321488C (zh) | 2007-06-13 |
| FI935022A0 (fi) | 1993-11-12 |
| EP0584236B1 (en) | 1997-07-16 |
| AU2026492A (en) | 1992-12-30 |
| JPH06508003A (ja) | 1994-09-08 |
| FI935022A (fi) | 1993-11-12 |
| IL101857A (en) | 1998-12-06 |
| CN1097317C (zh) | 2002-12-25 |
| JP3269558B2 (ja) | 2002-03-25 |
| WO1992021170A2 (en) | 1992-11-26 |
| DE69220942T2 (de) | 1998-03-05 |
| ES2104931T3 (es) | 1997-10-16 |
| EP0670593A3 (en) | 1996-02-07 |
| AU654726B2 (en) | 1994-11-17 |
| HK1001353A1 (en) | 1998-06-12 |
| CN1474485A (zh) | 2004-02-11 |
| MY110622A (en) | 1998-09-30 |
| FI110971B (fi) | 2003-04-30 |
| IL101857A0 (en) | 1992-12-30 |
| EP0584236A1 (en) | 1994-03-02 |
| SG46466A1 (en) | 1998-02-20 |
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