KR0142797B1 - 실리콘-온-인슐레이터구조의 제조방법 - Google Patents
실리콘-온-인슐레이터구조의 제조방법Info
- Publication number
- KR0142797B1 KR0142797B1 KR1019940013740A KR19940013740A KR0142797B1 KR 0142797 B1 KR0142797 B1 KR 0142797B1 KR 1019940013740 A KR1019940013740 A KR 1019940013740A KR 19940013740 A KR19940013740 A KR 19940013740A KR 0142797 B1 KR0142797 B1 KR 0142797B1
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- high concentration
- epitaxial layer
- substrate
- concentration impurity
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000012212 insulator Substances 0.000 title claims description 4
- 239000012535 impurity Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 4
- 238000009792 diffusion process Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims 1
- 150000002500 ions Chemical class 0.000 abstract description 8
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 238000002513 implantation Methods 0.000 abstract 1
- 239000004576 sand Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000001953 recrystallisation Methods 0.000 description 4
- -1 oxygen ions Chemical class 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000009528 severe injury Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Element Separation (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940013740A KR0142797B1 (ko) | 1994-06-17 | 1994-06-17 | 실리콘-온-인슐레이터구조의 제조방법 |
| US08/482,002 US5534459A (en) | 1994-06-17 | 1995-06-07 | Method for forming silicon on insulator structured |
| JP7173961A JP2660682B2 (ja) | 1994-06-17 | 1995-06-19 | シリコン・オン・インシュレータ（ｓｏｉ）の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940013740A KR0142797B1 (ko) | 1994-06-17 | 1994-06-17 | 실리콘-온-인슐레이터구조의 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR0142797B1 true KR0142797B1 (ko) | 1998-08-17 |
Family
ID=19385509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940013740A KR0142797B1 (ko) | 1994-06-17 | 1994-06-17 | 실리콘-온-인슐레이터구조의 제조방법 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5534459A (ja) |
| JP (1) | JP2660682B2 (ja) |
| KR (1) | KR0142797B1 (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6080612A (en) * | 1998-05-20 | 2000-06-27 | Sharp Laboratories Of America, Inc. | Method of forming an ultra-thin SOI electrostatic discharge protection device |
| US6617226B1 (en) * | 1999-06-30 | 2003-09-09 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
| US6265250B1 (en) * | 1999-09-23 | 2001-07-24 | Advanced Micro Devices, Inc. | Method for forming SOI film by laser annealing |
| EP1495492B1 (de) * | 2002-04-16 | 2010-06-02 | Infineon Technologies AG | Substrat und verfahren zum herstellen eines substrats |
| US7611928B2 (en) * | 2002-04-16 | 2009-11-03 | Infineon Technologies Ag | Method for producing a substrate |
| KR100498446B1 (ko) * | 2002-07-05 | 2005-07-01 | 삼성전자주식회사 | Ｓｏｉ웨이퍼 및 그의 제조방법 |
| FR2860919B1 (fr) * | 2003-10-09 | 2009-09-11 | St Microelectronics Sa | Structures et procedes de fabrication de regions semiconductrices sur isolant |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5141881A (en) * | 1989-04-20 | 1992-08-25 | Sanyo Electric Co., Ltd. | Method for manufacturing a semiconductor integrated circuit |
| JPH04137723A (ja) * | 1990-09-28 | 1992-05-12 | Nippon Steel Corp | 半導体積層基板の製造方法 |
| KR950000660B1 (ko) * | 1992-02-29 | 1995-01-27 | 현대전자산업 주식회사 | 고집적 소자용 미세콘택 형성방법 |
| US5258318A (en) * | 1992-05-15 | 1993-11-02 | International Business Machines Corporation | Method of forming a BiCMOS SOI wafer having thin and thick SOI regions of silicon |
| US5358881A (en) * | 1993-05-19 | 1994-10-25 | Hewlett-Packard Company | Silicon topography control method |
| US5476800A (en) * | 1994-01-31 | 1995-12-19 | Burton; Gregory N. | Method for formation of a buried layer for a semiconductor device |
| US5470766A (en) * | 1994-06-06 | 1995-11-28 | Integrated Devices Technology, Inc. | Efficient method for fabricating optimal BiCMOS N-wells for bipolar and field effect transistors |
-
1994
- 1994-06-17 KR KR1019940013740A patent/KR0142797B1/ko not_active IP Right Cessation
-
1995
- 1995-06-07 US US08/482,002 patent/US5534459A/en not_active Expired - Lifetime
- 1995-06-19 JP JP7173961A patent/JP2660682B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2660682B2 (ja) | 1997-10-08 |
| JPH08191139A (ja) | 1996-07-23 |
| US5534459A (en) | 1996-07-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20050322 Year of fee payment: 8 |
|
| LAPS | Lapse due to unpaid annual fee |