KR0140688B1 - 에칭제, 세정제 및 기기의 제조방법 - Google Patents

에칭제, 세정제 및 기기의 제조방법

Info

Publication number
KR0140688B1
KR0140688B1 KR1019930020137A KR930020137A KR0140688B1 KR 0140688 B1 KR0140688 B1 KR 0140688B1 KR 1019930020137 A KR1019930020137 A KR 1019930020137A KR 930020137 A KR930020137 A KR 930020137A KR 0140688 B1 KR0140688 B1 KR 0140688B1
Authority
KR
South Korea
Prior art keywords
acid
etching
oxo
oxo acid
mol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019930020137A
Other languages
English (en)
Korean (ko)
Other versions
KR940007157A (ko
Inventor
히또시 세끼
사또시 미야자와
히로후미 후꾸이
야스히꼬 가사마
아끼라 아베
쓰또무 나까무라
타다히로 오오미
가즈꼬 오기노
Original Assignee
아끼라 아베
가부시키 가이샤 프론테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아끼라 아베, 가부시키 가이샤 프론테크 filed Critical 아끼라 아베
Publication of KR940007157A publication Critical patent/KR940007157A/ko
Application granted granted Critical
Publication of KR0140688B1 publication Critical patent/KR0140688B1/ko
Assigned to 엘지디스플레이 주식회사 reassignment 엘지디스플레이 주식회사 권리의 이전등록 Assignors: 가부시키가이샤프론테크
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Detergent Compositions (AREA)
KR1019930020137A 1992-09-30 1993-09-28 에칭제, 세정제 및 기기의 제조방법 Expired - Lifetime KR0140688B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4285338A JP2681433B2 (ja) 1992-09-30 1992-09-30 エッチング剤およびこのエッチング剤を使用するシリコン半導体部材のエッチング方法、および洗浄剤およびこの洗浄剤を使用するシリコン半導体部材の洗浄方法
JP92-285338 1992-09-30

Publications (2)

Publication Number Publication Date
KR940007157A KR940007157A (ko) 1994-04-26
KR0140688B1 true KR0140688B1 (ko) 1998-06-01

Family

ID=17690262

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930020137A Expired - Lifetime KR0140688B1 (ko) 1992-09-30 1993-09-28 에칭제, 세정제 및 기기의 제조방법

Country Status (4)

Country Link
US (1) US5409569A (https=)
JP (1) JP2681433B2 (https=)
KR (1) KR0140688B1 (https=)
TW (1) TW260810B (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2743823B2 (ja) * 1994-03-25 1998-04-22 日本電気株式会社 半導体基板のウエット処理方法
TW332322B (en) * 1994-03-31 1998-05-21 Furontec Kk Manufacturing method for etchant and electronic element of conductive semiconductor
JP2792550B2 (ja) * 1994-03-31 1998-09-03 株式会社フロンテック エッチング剤
EP0771892A4 (en) * 1994-08-01 1997-11-19 Komatsu Denshi Kinzoku Kk METHOD FOR PRODUCING DECORATIVE SILICONS
US20040140288A1 (en) * 1996-07-25 2004-07-22 Bakul Patel Wet etch of titanium-tungsten film
JP4240424B2 (ja) * 1998-10-23 2009-03-18 エルジー ディスプレイ カンパニー リミテッド エッチング剤及びこれを用いた電子機器用基板の製造方法
TW490756B (en) 1999-08-31 2002-06-11 Hitachi Ltd Method for mass production of semiconductor integrated circuit device and manufacturing method of electronic components
US6915592B2 (en) * 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
EP1662970A2 (en) * 2003-09-17 2006-06-07 Becton, Dickinson and Company System and method for creating linear and non-linear trenches in silicon and other crystalline materials with a router
JP4355201B2 (ja) * 2003-12-02 2009-10-28 関東化学株式会社 タングステン金属除去液及びそれを用いたタングステン金属の除去方法
JP4400281B2 (ja) * 2004-03-29 2010-01-20 信越半導体株式会社 シリコンウエーハの結晶欠陥評価方法
ATE469199T1 (de) * 2006-10-31 2010-06-15 Soitec Silicon On Insulator Verfahren zur charakterisierung von defekten auf silizium-oberflächen, ätzlösung für silizium- oberflächen und verfahren zur behandlung von silizium-oberflächen mit der ätzlösung
KR20100007461A (ko) * 2008-07-14 2010-01-22 삼성전자주식회사 석영 부품용 세정액 및 이를 이용한 석영 부품 세정방법
CN102246278B (zh) * 2008-12-10 2014-01-01 朗姆研究公司 用于促进硅电极抛光的盘和适配器组件
BR112013006364A2 (pt) 2010-09-16 2016-06-28 Specmat Inc método, processo, e tecnologia de fabricação de células solares de silício cristalino de alta eficiência e baixo custo
US10622495B2 (en) * 2014-03-18 2020-04-14 Specmat, Inc. Method, process and fabrication technology for oxide layers
US10619097B2 (en) 2014-06-30 2020-04-14 Specmat, Inc. Low-[HF] room temperature wet chemical growth (RTWCG) chemical formulation
WO2021188452A1 (en) * 2020-03-16 2021-09-23 1366 Technologies, Inc. High temperature acid etch for silicon
CN113106465A (zh) * 2021-04-21 2021-07-13 西安瑞鑫科金属材料有限责任公司 一种高Cr耐蚀不锈钢表面氧化膜脱膜剂及脱膜方法
JP2025170873A (ja) 2024-05-08 2025-11-20 東京応化工業株式会社 処理液、半導体基板の処理方法、及び半導体デバイスの製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5299101A (en) * 1976-02-16 1977-08-19 Fuji Photo Film Co Ltd Liquid of treating metalic image forming material
US4369099A (en) * 1981-01-08 1983-01-18 Bell Telephone Laboratories, Incorporated Photoelectrochemical etching of semiconductors
JPS57137472A (en) * 1981-02-17 1982-08-25 Nec Corp Etching method for polycrystalline silicon
EP0117051B2 (en) * 1983-01-19 1995-02-08 BRITISH TELECOMMUNICATIONS public limited company Growth of semiconductors
USH291H (en) * 1983-03-01 1987-06-02 The United States Of America As Represented By The Secretary Of The Navy Fully ion implanted junction field effect transistor
US4578419A (en) * 1985-03-28 1986-03-25 Amchem Products, Inc. Iodine compound activation of autodeposition baths
US5111259A (en) * 1989-07-25 1992-05-05 Texas Instruments Incorporated Trench capacitor memory cell with curved capacitors

Also Published As

Publication number Publication date
JP2681433B2 (ja) 1997-11-26
TW260810B (https=) 1995-10-21
JPH06200384A (ja) 1994-07-19
US5409569A (en) 1995-04-25
KR940007157A (ko) 1994-04-26

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