JP4225548B2 - エッチング液組成物及びエッチング方法 - Google Patents
エッチング液組成物及びエッチング方法 Download PDFInfo
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- JP4225548B2 JP4225548B2 JP2004000981A JP2004000981A JP4225548B2 JP 4225548 B2 JP4225548 B2 JP 4225548B2 JP 2004000981 A JP2004000981 A JP 2004000981A JP 2004000981 A JP2004000981 A JP 2004000981A JP 4225548 B2 JP4225548 B2 JP 4225548B2
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- 238000005530 etching Methods 0.000 title claims description 37
- 239000000203 mixture Substances 0.000 title claims description 9
- 238000000034 method Methods 0.000 title claims description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 36
- 239000000243 solution Substances 0.000 claims description 18
- 235000006408 oxalic acid Nutrition 0.000 claims description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 239000011651 chromium Substances 0.000 claims description 10
- 239000007864 aqueous solution Substances 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- 150000003839 salts Chemical class 0.000 claims description 5
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 claims description 4
- 150000002222 fluorine compounds Chemical class 0.000 claims description 4
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 3
- LXPCOISGJFXEJE-UHFFFAOYSA-N oxifentorex Chemical compound C=1C=CC=CC=1C[N+](C)([O-])C(C)CC1=CC=CC=C1 LXPCOISGJFXEJE-UHFFFAOYSA-N 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims 6
- 150000001875 compounds Chemical class 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 239000002253 acid Substances 0.000 description 9
- -1 polyoxyethylene phosphate Polymers 0.000 description 9
- 239000011521 glass Substances 0.000 description 6
- 239000013522 chelant Substances 0.000 description 5
- NVVZQXQBYZPMLJ-UHFFFAOYSA-N formaldehyde;naphthalene-1-sulfonic acid Chemical compound O=C.C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 NVVZQXQBYZPMLJ-UHFFFAOYSA-N 0.000 description 4
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphonic acid group Chemical group P(O)(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 3
- 229910000423 chromium oxide Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- XHAZMZWXAOBLQG-UHFFFAOYSA-N (1-hydroxy-1-phosphonopropyl)phosphonic acid Chemical compound CCC(O)(P(O)(O)=O)P(O)(O)=O XHAZMZWXAOBLQG-UHFFFAOYSA-N 0.000 description 2
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 241000282320 Panthera leo Species 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 description 2
- 229920001400 block copolymer Polymers 0.000 description 2
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 159000000000 sodium salts Chemical class 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- LDMOEFOXLIZJOW-UHFFFAOYSA-N 1-dodecanesulfonic acid Chemical compound CCCCCCCCCCCCS(O)(=O)=O LDMOEFOXLIZJOW-UHFFFAOYSA-N 0.000 description 1
- HZNVUJQVZSTENZ-UHFFFAOYSA-N 2,3-dichloro-5,6-dicyano-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(C#N)=C(C#N)C1=O HZNVUJQVZSTENZ-UHFFFAOYSA-N 0.000 description 1
- QWHHBVWZZLQUIH-UHFFFAOYSA-N 2-octylbenzenesulfonic acid Chemical compound CCCCCCCCC1=CC=CC=C1S(O)(=O)=O QWHHBVWZZLQUIH-UHFFFAOYSA-N 0.000 description 1
- 150000001204 N-oxides Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical compound OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 description 1
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- MBKDYNNUVRNNRF-UHFFFAOYSA-N medronic acid Chemical compound OP(O)(=O)CP(O)(O)=O MBKDYNNUVRNNRF-UHFFFAOYSA-N 0.000 description 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- JTDPJYXDDYUJBS-UHFFFAOYSA-N quinoline-2-carbohydrazide Chemical compound C1=CC=CC2=NC(C(=O)NN)=CC=C21 JTDPJYXDDYUJBS-UHFFFAOYSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- PNGLEYLFMHGIQO-UHFFFAOYSA-M sodium;3-(n-ethyl-3-methoxyanilino)-2-hydroxypropane-1-sulfonate;dihydrate Chemical compound O.O.[Na+].[O-]S(=O)(=O)CC(O)CN(CC)C1=CC=CC(OC)=C1 PNGLEYLFMHGIQO-UHFFFAOYSA-M 0.000 description 1
- BFXAWOHHDUIALU-UHFFFAOYSA-M sodium;hydron;difluoride Chemical compound F.[F-].[Na+] BFXAWOHHDUIALU-UHFFFAOYSA-M 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
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- Liquid Crystal (AREA)
- Weting (AREA)
Description
極等に透明導電膜が用いられ、透明導電膜としてITO膜が広く使用されている。ITO膜は、例えばスパッタリング法等の成膜プロセスを用いて、例えばガラス等の基板上に形成される。さらに、レジスト等をマスクにしてITO膜をエッチングすることで電極パタ−ンが形成される。このエッチング工程には湿式と乾式があるが、湿式ではエッチング液が使用される。
実施例1〜7、比較例1〜4
表1に実施例及び比較例のエッチング液を表1に従って調製した。
残渣除去性試験:図1に示した基板は、ガラス基板上にクロムをスパッタリングして成膜し、ポジ型感光性レジスト塗布し、露光、現像した後、湿式エッチングによってクロムをエッチングし、レジストを剥離したのち非晶質ITOを成膜した基板である。
図1に示した基板を40℃に保ったエッチング液にエッチング速度から算出されるエッチングに必要な最小時間(ジャストエッチ)の1.0倍または1.3倍の時間浸漬し、水洗した。電子顕微鏡でクロム及びガラス上の残渣を観察した。
結果を表2に示す。
2 非晶質ITO
3 ガラス基板
Claims (4)
- シュウ酸、1−ヒドロキシエタン−1,1−ジホスホン酸、及び分子中にSO3基を有するホルムアルデヒド縮合物及び/又はその塩を含有する水溶液からなるクロム膜上の透明導電膜用酸化インジウム錫膜のエッチング液組成物。
- シュウ酸、1−ヒドロキシエタン−1,1−ジホスホン酸、分子中にSO 3 基を有するホルムアルデヒド縮合物及び/又はその塩、およびフッ素化合物を含有する水溶液からなるクロム膜上の透明導電膜用酸化インジウム錫膜のエッチング液組成物。
- フッ素化合物が、フッ化アンモニウム、ヘキサフルオロケイ酸アンモニウム、およびホウフッ化アンモニウムより選択される1種以上である請求項2記載のクロム膜上の透明導電膜用酸化インジウム錫膜のエッチング液組成物。
- 請求項1または請求項2記載のエッチング液組成物を用いることを特徴とするクロム膜上の酸化インジウム錫透明導電膜のエッチング方法。
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JP2005197397A JP2005197397A (ja) | 2005-07-21 |
JP4225548B2 true JP4225548B2 (ja) | 2009-02-18 |
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Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7527742B2 (en) * | 2005-06-27 | 2009-05-05 | Momentive Performance Materials Inc. | Etchant, method of etching, laminate formed thereby, and device |
JP4816250B2 (ja) * | 2006-05-25 | 2011-11-16 | 三菱瓦斯化学株式会社 | エッチング液組成物及びエッチング方法 |
TWI421937B (zh) * | 2006-09-13 | 2014-01-01 | Nagase Chemtex Corp | 蝕刻液組成物 |
JP4899747B2 (ja) * | 2006-09-25 | 2012-03-21 | 凸版印刷株式会社 | パターニング方法 |
JP4961251B2 (ja) * | 2007-04-19 | 2012-06-27 | 林純薬工業株式会社 | 導電膜用エッチング液組成物 |
JP5311249B2 (ja) * | 2008-03-12 | 2013-10-09 | ナガセケムテックス株式会社 | アモルファスito透明導電膜用エッチング液組成物及びエッチング方法 |
JP5354989B2 (ja) * | 2008-08-14 | 2013-11-27 | 関東化学株式会社 | 透明導電膜用エッチング液組成物 |
JP5262477B2 (ja) * | 2008-09-11 | 2013-08-14 | 東ソー株式会社 | 透明電極用エッチング液 |
JP5788701B2 (ja) * | 2011-04-11 | 2015-10-07 | 関東化学株式会社 | 透明導電膜用エッチング液組成物 |
JP6155729B2 (ja) * | 2013-03-21 | 2017-07-05 | 凸版印刷株式会社 | エッチング液組成物 |
JP6369460B2 (ja) * | 2013-05-31 | 2018-08-08 | 日立化成株式会社 | エッチング組成物 |
JP6501218B2 (ja) * | 2015-03-18 | 2019-04-17 | 株式会社Adeka | エッチング液組成物及びエッチング方法 |
JP6697406B2 (ja) * | 2016-01-21 | 2020-05-20 | 株式会社東芝 | 透明電極、電子デバイス、および電子デバイスの製造方法 |
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