JPWO2024203338A5 - - Google Patents

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Publication number
JPWO2024203338A5
JPWO2024203338A5 JP2025510438A JP2025510438A JPWO2024203338A5 JP WO2024203338 A5 JPWO2024203338 A5 JP WO2024203338A5 JP 2025510438 A JP2025510438 A JP 2025510438A JP 2025510438 A JP2025510438 A JP 2025510438A JP WO2024203338 A5 JPWO2024203338 A5 JP WO2024203338A5
Authority
JP
Japan
Prior art keywords
polysilicon
semiconductor device
sidewall
electrode
silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025510438A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024203338A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/009793 external-priority patent/WO2024203338A1/ja
Publication of JPWO2024203338A1 publication Critical patent/JPWO2024203338A1/ja
Publication of JPWO2024203338A5 publication Critical patent/JPWO2024203338A5/ja
Pending legal-status Critical Current

Links

JP2025510438A 2023-03-30 2024-03-13 Pending JPWO2024203338A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023056616 2023-03-30
PCT/JP2024/009793 WO2024203338A1 (ja) 2023-03-30 2024-03-13 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPWO2024203338A1 JPWO2024203338A1 (https=) 2024-10-03
JPWO2024203338A5 true JPWO2024203338A5 (https=) 2025-12-26

Family

ID=92905769

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025510438A Pending JPWO2024203338A1 (https=) 2023-03-30 2024-03-13

Country Status (5)

Country Link
US (1) US20260032949A1 (https=)
JP (1) JPWO2024203338A1 (https=)
CN (1) CN121003026A (https=)
DE (1) DE112024001488T5 (https=)
WO (1) WO2024203338A1 (https=)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4682501B2 (ja) * 2003-08-28 2011-05-11 サンケン電気株式会社 絶縁ゲート型半導体素子およびこれを備えた半導体集積回路装置
WO2009019837A1 (ja) * 2007-08-07 2009-02-12 Panasonic Corporation 炭化珪素半導体素子およびその製造方法
JP2009164183A (ja) * 2007-12-28 2009-07-23 Toshiba Corp 半導体装置及びその製造方法
US10367089B2 (en) * 2011-03-28 2019-07-30 General Electric Company Semiconductor device and method for reduced bias threshold instability
JP5646527B2 (ja) 2012-03-02 2014-12-24 株式会社東芝 半導体装置および半導体装置の製造方法
JP2017028219A (ja) * 2015-07-28 2017-02-02 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
DE212020000485U1 (de) * 2019-05-22 2021-07-19 Rohm Co., Ltd. SiC-Halbleiterbauteil
JP7529429B2 (ja) * 2019-05-30 2024-08-06 ローム株式会社 半導体装置
JP7785497B2 (ja) 2021-10-08 2025-12-15 Tdk株式会社 ガスセンサ

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