DE112024001488T5 - Halbleiterbauelement und herstellungsverfahren für ein halbleiterbauelement - Google Patents

Halbleiterbauelement und herstellungsverfahren für ein halbleiterbauelement

Info

Publication number
DE112024001488T5
DE112024001488T5 DE112024001488.7T DE112024001488T DE112024001488T5 DE 112024001488 T5 DE112024001488 T5 DE 112024001488T5 DE 112024001488 T DE112024001488 T DE 112024001488T DE 112024001488 T5 DE112024001488 T5 DE 112024001488T5
Authority
DE
Germany
Prior art keywords
section
electrode
film
silicide
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112024001488.7T
Other languages
German (de)
English (en)
Inventor
Seigo MORI
Yuki Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of DE112024001488T5 publication Critical patent/DE112024001488T5/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates

Landscapes

  • Electrodes Of Semiconductors (AREA)
DE112024001488.7T 2023-03-30 2024-03-13 Halbleiterbauelement und herstellungsverfahren für ein halbleiterbauelement Pending DE112024001488T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023056616 2023-03-30
JP2023-056616 2023-03-30
PCT/JP2024/009793 WO2024203338A1 (ja) 2023-03-30 2024-03-13 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
DE112024001488T5 true DE112024001488T5 (de) 2026-03-05

Family

ID=92905769

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112024001488.7T Pending DE112024001488T5 (de) 2023-03-30 2024-03-13 Halbleiterbauelement und herstellungsverfahren für ein halbleiterbauelement

Country Status (5)

Country Link
US (1) US20260032949A1 (https=)
JP (1) JPWO2024203338A1 (https=)
CN (1) CN121003026A (https=)
DE (1) DE112024001488T5 (https=)
WO (1) WO2024203338A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130234159A1 (en) 2012-03-02 2013-09-12 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP2023056616A (ja) 2021-10-08 2023-04-20 Tdk株式会社 ガスセンサ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4682501B2 (ja) * 2003-08-28 2011-05-11 サンケン電気株式会社 絶縁ゲート型半導体素子およびこれを備えた半導体集積回路装置
WO2009019837A1 (ja) * 2007-08-07 2009-02-12 Panasonic Corporation 炭化珪素半導体素子およびその製造方法
JP2009164183A (ja) * 2007-12-28 2009-07-23 Toshiba Corp 半導体装置及びその製造方法
US10367089B2 (en) * 2011-03-28 2019-07-30 General Electric Company Semiconductor device and method for reduced bias threshold instability
JP2017028219A (ja) * 2015-07-28 2017-02-02 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
DE212020000485U1 (de) * 2019-05-22 2021-07-19 Rohm Co., Ltd. SiC-Halbleiterbauteil
JP7529429B2 (ja) * 2019-05-30 2024-08-06 ローム株式会社 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130234159A1 (en) 2012-03-02 2013-09-12 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP2023056616A (ja) 2021-10-08 2023-04-20 Tdk株式会社 ガスセンサ

Also Published As

Publication number Publication date
US20260032949A1 (en) 2026-01-29
JPWO2024203338A1 (https=) 2024-10-03
WO2024203338A1 (ja) 2024-10-03
CN121003026A (zh) 2025-11-21

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