JPWO2024157943A5 - - Google Patents

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Publication number
JPWO2024157943A5
JPWO2024157943A5 JP2024573050A JP2024573050A JPWO2024157943A5 JP WO2024157943 A5 JPWO2024157943 A5 JP WO2024157943A5 JP 2024573050 A JP2024573050 A JP 2024573050A JP 2024573050 A JP2024573050 A JP 2024573050A JP WO2024157943 A5 JPWO2024157943 A5 JP WO2024157943A5
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JP
Japan
Prior art keywords
gas
substrate
processing method
region
substrate processing
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JP2024573050A
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English (en)
Japanese (ja)
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JP7813388B2 (ja
JPWO2024157943A1 (https=
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Priority claimed from PCT/JP2024/001705 external-priority patent/WO2024157943A1/ja
Publication of JPWO2024157943A1 publication Critical patent/JPWO2024157943A1/ja
Publication of JPWO2024157943A5 publication Critical patent/JPWO2024157943A5/ja
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Publication of JP7813388B2 publication Critical patent/JP7813388B2/ja
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JP2024573050A 2023-01-27 2024-01-22 基板処理方法及び基板処理システム Active JP7813388B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202363441559P 2023-01-27 2023-01-27
US63/441,559 2023-01-27
JP2023126394 2023-08-02
JP2023126394 2023-08-02
PCT/JP2024/001705 WO2024157943A1 (ja) 2023-01-27 2024-01-22 基板処理方法及び基板処理システム

Publications (3)

Publication Number Publication Date
JPWO2024157943A1 JPWO2024157943A1 (https=) 2024-08-02
JPWO2024157943A5 true JPWO2024157943A5 (https=) 2025-07-25
JP7813388B2 JP7813388B2 (ja) 2026-02-12

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JP2024573050A Active JP7813388B2 (ja) 2023-01-27 2024-01-22 基板処理方法及び基板処理システム

Country Status (7)

Country Link
US (1) US20250349519A1 (https=)
EP (1) EP4651182A1 (https=)
JP (1) JP7813388B2 (https=)
KR (1) KR20250140553A (https=)
CN (1) CN120530478A (https=)
TW (1) TW202503884A (https=)
WO (1) WO2024157943A1 (https=)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0547718A (ja) * 1991-08-15 1993-02-26 Sony Corp ドライエツチング方法
JP2008060171A (ja) * 2006-08-29 2008-03-13 Taiyo Nippon Sanso Corp 半導体処理装置のクリーニング方法
JP5968130B2 (ja) * 2012-07-10 2016-08-10 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6604738B2 (ja) * 2015-04-10 2019-11-13 東京エレクトロン株式会社 プラズマエッチング方法、パターン形成方法及びクリーニング方法
US10283369B2 (en) * 2016-08-10 2019-05-07 Tokyo Electron Limited Atomic layer etching using a boron-containing gas and hydrogen fluoride gas
US10546748B2 (en) * 2017-02-17 2020-01-28 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
US11355353B2 (en) * 2018-01-30 2022-06-07 Lam Research Corporation Tin oxide mandrels in patterning
KR20200144580A (ko) 2018-05-11 2020-12-29 램 리써치 코포레이션 Euv 패터닝 가능한 하드 마스크들을 제조하기 위한 방법들
TWI837391B (zh) * 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR102748920B1 (ko) * 2019-06-27 2024-12-30 램 리써치 코포레이션 교번하는 에칭 및 패시베이션 프로세스
TW202536930A (zh) * 2019-06-28 2025-09-16 美商蘭姆研究公司 光阻膜的乾式腔室清潔
EP4078292A4 (en) * 2020-07-07 2023-11-22 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
CN116134381A (zh) * 2020-07-17 2023-05-16 朗姆研究公司 含钽光致抗蚀剂

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